A Survey of Metal Oxides and Top Electrodes for Resistive Memory Devices

2011 ◽  
Vol 1337 ◽  
Author(s):  
S.M. Bishop ◽  
B.D. Briggs ◽  
K.D. Leedy ◽  
S. Addepalli ◽  
N.C. Cady
Keyword(s):  
Metal Oxide ◽  
Metal Oxides ◽  
Resistive Switching ◽  
Electrode Material ◽  
Metal Insulator ◽  
Switching Performance ◽  
Metal Insulator Metal ◽  
Non Volatile Memory ◽  
And Behavior ◽  
Switching Devices

ABSTRACTMetal-insulator-metal (MIM) resistive switching devices are being pursued for a number of applications, including non-volatile memory and high density/low power computing. Reported resistive switching devices vary greatly in the choice of metal oxide and electrode material. Importantly, the choice of both the metal oxide and electrode material can have significant impact on device performance, their ability to switch, and the mode of switching (unipolar, bipolar, nonpolar) that results. In this study, three metal oxides (Cu2O, HfOx, and TiOx) were deposited onto copper bottom electrodes (BEs). Four different top electrode (TE) materials (Ni, Au, Al, and Pt) were then fabricated on the various metal oxides to form MIM structures. Devices were then characterized electrically to determine switching performance and behavior. Our results show that the metal TE plays a large role in determining whether or not the MIM structure will switch resistively and what mode of switching (unipolar, bipolar, or non-polar) is observed.

Resistive switching of HfO2-based Metal–Insulator–Metal diodes: Impact of the top electrode material

2012 ◽  
Vol 520 (14) ◽  
pp. 4551-4555 ◽  
Author(s):  
T. Bertaud ◽  
D. Walczyk ◽  
Ch. Walczyk ◽  
S. Kubotsch ◽  
M. Sowinska ◽  
...  
Keyword(s):  
Resistive Switching ◽  
Electrode Material ◽  
Metal Insulator ◽  
Metal Insulator Metal

Scaling behavior of oxide-based electrothermal threshold switching devices

Nanoscale ◽  
2017 ◽  
Vol 9 (37) ◽  
pp. 14139-14148 ◽  
Author(s):  
Dasheng Li ◽  
Jonathan M. Goodwill ◽  
James A. Bain ◽  
Marek Skowronski
Keyword(s):  
Transition Metal ◽  
Metal Oxides ◽  
Transition Metal Oxides ◽  
Scaling Behavior ◽  
Switching Behavior ◽  
Threshold Switching ◽  
Non Volatile Memory ◽  
Volatile Memory ◽  
Switching Devices

Materials exhibiting insulator to metal transition (IMT) and transition metal oxides showing threshold switching behavior are considered as promising candidates for selector devices for crossbar non-volatile memory application.

Pulse-induced low-power resistive switching in HfO2 metal-insulator-metal diodes for nonvolatile memory applications

2009 ◽  
Vol 105 (11) ◽  
pp. 114103 ◽  
Author(s):  
Ch. Walczyk ◽  
Ch. Wenger ◽  
R. Sohal ◽  
M. Lukosius ◽  
A. Fox ◽  
...  
Keyword(s):  
Low Power ◽  
Resistive Switching ◽  
Nonvolatile Memory ◽  
Metal Insulator ◽  
Metal Insulator Metal ◽  
Memory Applications

IMPROVEMENT OF RETENTIVITY IN TiOx/HfOx BILAYER STRUCTURE FOR LOW POWER RESISTIVE SWITCHING MEMORY APPLICATIONS

2015 ◽  
Vol 22 (02) ◽  
pp. 1550031 ◽  
Author(s):  
PRANAB KUMAR SARKAR ◽  
ASIM ROY
Keyword(s):  
Resistive Switching ◽  
Conduction Mechanism ◽  
Memory Cell ◽  
Data Retention ◽  
Bipolar Resistive Switching ◽  
Switching Performance ◽  
Current Voltage ◽  
Metal Insulator Metal ◽  
Current Compliance ◽  
Memory Applications

This paper reports the bipolar resistive switching (BRS) characteristics in Al / Ti / TiO x/ HfO x/ Pt heterostructure during a DC sweep cycle with current compliance (CC) of 250 μA. The improvement in the switching performance in a CMOS compatible Al / Ti / TiO x/ HfO x/ Pt memory cell has been observed. The improvement is due to oxygen-rich HfO x layer insertion in simple metal-insulator-metal (MIM) sandwich structure. Analysis of current–voltage (I–V) characteristics revealed the trap-controlled space charge limited current (TC-SCLC) conduction mechanism is the most suitable mechanism signifying the dominant current conduction in all the bias regions and resistance states. Furthermore, this bilayer memory stack exhibits a tight distribution of switching parameters, good switching endurance up to 105 cycles, and good data retention of > 104 s at 85°C.

Resistive switching on MgO-based metal-insulator-metal structures grown by molecular beam epitaxy

2014 ◽  
Vol 12 (1-2) ◽  
pp. 246-249 ◽  
Author(s):  
M. Menghini ◽  
C. Quinteros ◽  
C.-Y Su ◽  
P. Homm ◽  
P. Levy ◽  
...  
Keyword(s):  
Molecular Beam Epitaxy ◽  
Resistive Switching ◽  
Molecular Beam ◽  
Metal Insulator ◽  
Metal Structures ◽  
Metal Insulator Metal

TEM and EELS Study on TaOx-based Nanoscale Resistive Switching Devices

2015 ◽  
Vol 1805 ◽  
Author(s):  
Kate J. Norris ◽  
J. Joshua Yang ◽  
Nobuhiko P. Kobayashi
Keyword(s):  
Resistive Switching ◽  
Electrical Resistance ◽  
Tantalum Oxide ◽  
Memory Device ◽  
Material System ◽  
Reversible Change ◽  
Cross Sectional ◽  
X Ray ◽  
Non Volatile Memory ◽  
Switching Devices

ABSTRACTResistive switching, a reversible change in electrical resistance of a dielectric layer through the application of a voltage bias, has propelled a field of research to form improved non-volatile memory device. Tantalum oxide has been investigated as the dielectric component of resistive switching devices as a leading candidate for a few years. Presented here is a structural and chemical investigation of TaOx devices with 55nm in diameter in the virgin, forming on, and switched off (reset) states for comparison using cross sectional TEM techniques including HRTEM, and EELS to gain further understanding of this material system. The nanodevices imaged in this study were switched below 100µA. Unique features found in this study are in agreement with previous hypotheses made by various researchers based on X-ray fluorescence microscopy of micron-scale devices, indicating a variation in oxygen concentration around the switching area.

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