TEM and EELS Study on TaOx-based Nanoscale Resistive Switching Devices

2015 ◽  
Vol 1805 ◽  
Author(s):  
Kate J. Norris ◽  
J. Joshua Yang ◽  
Nobuhiko P. Kobayashi
Keyword(s):  
Resistive Switching ◽  
Electrical Resistance ◽  
Tantalum Oxide ◽  
Memory Device ◽  
Material System ◽  
Reversible Change ◽  
Cross Sectional ◽  
X Ray ◽  
Non Volatile Memory ◽  
Switching Devices

ABSTRACTResistive switching, a reversible change in electrical resistance of a dielectric layer through the application of a voltage bias, has propelled a field of research to form improved non-volatile memory device. Tantalum oxide has been investigated as the dielectric component of resistive switching devices as a leading candidate for a few years. Presented here is a structural and chemical investigation of TaOx devices with 55nm in diameter in the virgin, forming on, and switched off (reset) states for comparison using cross sectional TEM techniques including HRTEM, and EELS to gain further understanding of this material system. The nanodevices imaged in this study were switched below 100µA. Unique features found in this study are in agreement with previous hypotheses made by various researchers based on X-ray fluorescence microscopy of micron-scale devices, indicating a variation in oxygen concentration around the switching area.

Hydrothermal Synthesis of Lead Titanate Epitaxial Film for Non-Volatile Memory Device Application

2013 ◽  
Vol 652-654 ◽  
pp. 1846-1850
Author(s):  
Thin Thin Thwe ◽  
Than Than Win ◽  
Yin Maung Maung ◽  
Ko Ko Kyaw Soe
Keyword(s):  
Electron Microscopy ◽  
Silicon Dioxide ◽  
Lead Titanate ◽  
Conduction Mechanism ◽  
Epitaxial Film ◽  
Memory Device ◽  
X Ray Diffraction ◽  
X Ray ◽  
Non Volatile Memory ◽  
Scanning Electron

Hydrothermal synthesized lead titanate (PbTiO3¬) powder was prepared in a Teflon-lined stainless steel bomb at different bath temperatures. X-ray diffraction was performed to examine the phase assignment and crystallographic properties of hydrothermal synthesized lead titanate powder. Silicon dioxide (SiO2) was thermally deposited and adapted as intermediate layer on p-Si (100) substrates for MFIS (Metal/Ferroelectric/ Insulator/Semi-conductor) design. The microstructures of PbTiO3 film for both MFS and MFIS designs were observed by scanning electron microscopy (SEM). Charge conduction mechanism was also interpreted by C-2-V relationship. Polarization and electric field characteristics were measured by Sawyer-Tower circuit and good hysteresis nature was formed for both structures of the films. The loop of MFIS was wider than that of MFS cell. Also, the higher value of polarization (Ps=3.21E-03µC/cm2) for MFIS could be explained on the basis of higher dipole moment in this SiO2 buffer layer.

Structural and Chemical Analysis of Nanoscale Resistive Switching Devices: Assessment on Nonlinear Properties

2015 ◽  
Vol 1805 ◽  
Author(s):  
Kate J. Norris ◽  
J. Joshua Yang ◽  
Nobuhiko P. Kobayashi
Keyword(s):  
Resistive Switching ◽  
Electrode Materials ◽  
Nonlinear Behavior ◽  
Differential Resistance ◽  
Device Fabrication ◽  
Switching Behavior ◽  
Cross Sectional ◽  
Nonlinear Properties ◽  
Physical And Chemical ◽  
Switching Devices

ABSTRACTInvestigation into the phenomenon of resistive switching, a reversible change in electrical resistance by the application of a voltage bias, has given rise to the device fabrication, DC electrical testing, and cross sectional TEM/EELS characterization of nanoscale resistive switching devices. Typically, resistive switching devices are composed of a thin oxide layer between two conductive electrodes where applied bias can alter the resistance states. In a cross-bar array, nonlinearity of device I-V relation is a highly desirable characteristic that helps to mitigate the sneak path current leakage issue. Negative differential resistance (NDR) switching behavior offers such nonlinearity and has been observed in TaOx nanoscale devices utilizing certain electrode materials. To investigate this phenomenon, nanodevices were fabricated by sputtering TaOx onto TiN nanovias capped Nb electrodes. Cross sectional TEM/EELS were performed to reveal the physical and chemical changes in these devices to explore possible origins of nonlinear behavior when these top electrode materials are utilized with TaOx films.

Human hair keratin for physically transient resistive switching memory devices

2019 ◽  
Vol 7 (11) ◽  
pp. 3315-3321 ◽  
Author(s):  
Qiqi Lin ◽  
Shilei Hao ◽  
Wei Hu ◽  
Ming Wang ◽  
Zhigang Zang ◽  
...  
Keyword(s):  
Resistive Switching ◽  
Human Hair ◽  
Memory Device ◽  
Memory Devices ◽  
Resistive Switching Memory ◽  
Switching Performance ◽  
Hair Keratin ◽  
Non Volatile Memory ◽  
Volatile Memory ◽  
Switching Memory

A physically transient non-volatile memory device made of keratin exhibits great resistive switching performance.

Resistive switching effect enhanced by light irradiation in C/BaTiO3/C memory structure

2019 ◽  
Vol 12 (02) ◽  
pp. 1950010
Author(s):  
Liangchen Wu ◽  
Peng Chen
Keyword(s):  
Resistive Switching ◽  
White Light ◽  
Memory Device ◽  
Light Irradiation ◽  
Optical Control ◽  
Light Illumination ◽  
Non Volatile Memory ◽  
Power Densities ◽  
White Light Illumination ◽  
Resistive Switching Effect

The Ta/[C/BaTiO3/C]/Si device was obtained. The resistive switching (RS) behaviors of the Ta/[C/BaTiO3/C]/Si device are studied in the dark and under white-light illumination with various power densities. The results show that the device displays bipolar RS effect, which can be modulated by the white light. And the RS memory device shows biggish resistance ratio, which is more than 105 under white-light irradiation with a power density of 40[Formula: see text]mW/cm2, and the ratio can stabilize at nearly 71 cycles. This work is helpful for the optical control non-volatile memory.

Eliminating failure behavior by introducing CdS inter-layer in Cu2O-based memory cell

2018 ◽  
Vol 81 (2) ◽  
pp. 20101 ◽  
Author(s):  
Weijie Duan ◽  
Zhenxing Liu ◽  
Yang Zhang
Keyword(s):  
Resistive Switching ◽  
Random Access ◽  
Memory Cell ◽  
Memory Device ◽  
Failure Behavior ◽  
Access Memory ◽  
Bipolar Resistive Switching ◽  
Non Volatile Memory ◽  
Switching Characteristics ◽  
High Set

Resistive switching random access memory (RRAM) has attracted great attention due to its outstanding performance for the next generation non-volatile memory. However, the unexpected failure behaviors seriously hinder the further studies and applications of this new memory device. In this work, the bipolar resistive switching characteristics in Pt/CdS/Cu2O/FTO cells are investigated. The CdS inter-layer is used to suppress the failure behavior in set process. Comparing to the Pt/Cu2O/FTO cell, the switching process in Pt/CdS/Cu2O/FTO cell is not affected even at a high set voltage and the failure behavior is eliminated effectively. Therefore, this work proposes a feasible approach to solve the failure problem in RRAM.

scholarly journals Demonstration of Threshold Switching and Bipolar Resistive Switching in Ag/SnOx/TiN Memory Device

Metals ◽  
2021 ◽  
Vol 11 (10) ◽  
pp. 1605
Author(s):  
Jooyoung Pyo ◽  
Seungjin Woo ◽  
Kisong Lee ◽  
Sungjun Kim
Keyword(s):  
Resistive Switching ◽  
Photoelectron Spectroscopy ◽  
Pulse Amplitude ◽  
Memory Device ◽  
Gradual Transition ◽  
Bipolar Resistive Switching ◽  
Memory Switching ◽  
Threshold Switching ◽  
Non Volatile Memory ◽  
Multiple Pulses

In this work, we observed the duality of threshold switching and non-volatile memory switching of Ag/SnOx/TiN memory devices by controlling the compliance current (CC) or pulse amplitude. The insulator thickness and chemical analysis of the device stack were confirmed by transmission electron microscope (TEM) images of the Ag/SnOx/TiN stack and X-ray photoelectron spectroscopy (XPS) of the SnOx film. The threshold switching was achieved at low CC (50 μA), showing volatile resistive switching. Optimal CC (5 mA) for bipolar resistive switching conditions with a gradual transition was also found. An unstable low-resistance state (LRS) and negative-set behavior were observed at CCs of 1 mA and 30 mA, respectively. We also demonstrated the pulse operation for volatile switching, set, reset processes, and negative-set behaviors by controlling pulse amplitude and polarity. Finally, the potentiation and depression characteristics were mimicked by multiple pulses, and MNIST pattern recognition was calculated using a neural network, including the conductance update for a hardware-based neuromorphic system.

A Survey of Metal Oxides and Top Electrodes for Resistive Memory Devices

2011 ◽  
Vol 1337 ◽  
Author(s):  
S.M. Bishop ◽  
B.D. Briggs ◽  
K.D. Leedy ◽  
S. Addepalli ◽  
N.C. Cady
Keyword(s):  
Metal Oxide ◽  
Metal Oxides ◽  
Resistive Switching ◽  
Electrode Material ◽  
Metal Insulator ◽  
Switching Performance ◽  
Metal Insulator Metal ◽  
Non Volatile Memory ◽  
And Behavior ◽  
Switching Devices

ABSTRACTMetal-insulator-metal (MIM) resistive switching devices are being pursued for a number of applications, including non-volatile memory and high density/low power computing. Reported resistive switching devices vary greatly in the choice of metal oxide and electrode material. Importantly, the choice of both the metal oxide and electrode material can have significant impact on device performance, their ability to switch, and the mode of switching (unipolar, bipolar, nonpolar) that results. In this study, three metal oxides (Cu2O, HfOx, and TiOx) were deposited onto copper bottom electrodes (BEs). Four different top electrode (TE) materials (Ni, Au, Al, and Pt) were then fabricated on the various metal oxides to form MIM structures. Devices were then characterized electrically to determine switching performance and behavior. Our results show that the metal TE plays a large role in determining whether or not the MIM structure will switch resistively and what mode of switching (unipolar, bipolar, or non-polar) is observed.

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