Quantitative Determination of the Mechanical Stresses in BEoL Films and Structures on Si Wafers with Sub-micron Spatial Resolution by fibDAC

2012 ◽  
Vol 1428 ◽  
Author(s):  
Sven Rzepka ◽  
Dietmar Vogel ◽  
Ellen Auerswald ◽  
Bernd Michel
Keyword(s):  
Stress Analysis ◽  
Spatial Resolution ◽  
Focused Ion Beam ◽  
Stress Measurement ◽  
Ion Beam ◽  
Local Stress ◽  
Stress Relief ◽  
Image Correlation ◽  
Analysis Method ◽  
Local Stresses

ABSTRACTThe fibDAC stress analysis method, a new tool for local stress measurement, has been applied to patterned BEoL structures after being validated at complete films by established industrial methods like wafer bow measurement. The new tool uses focused ion beam (FIB) to mill a narrow trench of down to 30 nm width into the surface of the structure under investigation to trigger stress relief in its vicinity. Capturing the corresponding deformation by high resolution SEM micrographs and local digital image correlation, the original stress can be determined by simulating the stress relief process by automated finite element analyses. Simultaneously, the extraction of key material parameters of the film like Young’s modulus and Poisson’s ratio is possible.The spatial resolution of the fibDAC stress analysis method is 1 μm and better. It has been demonstrated at arrays of BEoL interconnects. The magnitude of the local stresses inside the metal traces has been shown to be substantially different to those occurring in the dielectrics between the lines. Such a spatial resolution clearly outperforms all established industrial methods.

Localized High-Resolution Stress Measurements on MEMS Structures

2009 ◽  
Author(s):  
Dietmar Vogel ◽  
Astrid Gollhardt ◽  
Bernd Michel
Keyword(s):  
Raman Spectroscopy ◽  
High Resolution ◽  
Spatial Resolution ◽  
Focused Ion Beam ◽  
Stress Measurement ◽  
Ion Beam ◽  
Stress Relief ◽  
Stokes Line ◽  
Stress Measurements ◽  
Electron Backscattering

Three different methods of stress measurement with strong spatial resolution are presented. They base on stress relief techniques caused by focused ion beam milling, on altered electron backscattering by deformed lattices and on Stokes line shift measurements by Raman spectroscopy. The capability of these methods is demonstrated by their application to typical MEMS structures. A comparison between the methods is performed in order to outline potentials and limitations.

Optimisation of Large Chunk Lift-Out Method and Lamella Preparation for CBED mEasurements Using Xenon Plasma FIB

2019 ◽  
Author(s):  
Miloš Hrabovský ◽  
Tomáš Morávek ◽  
Chandran Narendraraj ◽  
Jürgen Gluch ◽  
Martin Gall ◽  
...  
Keyword(s):  
Focused Ion Beam ◽  
Stress Measurement ◽  
Ion Beam ◽  
Local Stress ◽  
Local Variation ◽  
Fe Model ◽  
Large Area ◽  
Yield Production ◽  
Materials Used ◽  
Convergent Beam

Abstract As the new generation of microelectronics is pushed into smaller spaces and the yield production is pushing to lower the unoccupied spaces on chips, the local variation of stress has an influence on the component’s performance. This stress comes mainly from different thermal and mechanical properties of the materials used especially in 3D integrations like through silicon via (TSV) technology [1]. Through finite element simulation [2] the internal strain profile was modelled and based on these findings we devised a simulation model for a large area chunk lift out, to preserve the stress inside the material. Standard preparation method for strain measurement is to use a wafer dicing saw and subsequently focused ion beam (FIB) milling, to create lamellae with a defined geometry, close to the desired TSV. This method requires different equipment and knowledge base to achieve a lamella which is still contaminated by Gallium. Therefor we developed our own method based on an FE model of a large chunk lift out, where only a Xenon Plasma FIB is utilized until the local stress measurement using convergent beam electron diffraction (CBED) is measured in a transmission electron microscope (TEM).

Layout Overlay Techniques to Improve Failure Analysis

1998 ◽  
Author(s):  
Christian Burmer ◽  
Siegfried Görlich ◽  
Siegfried Pauthner
Keyword(s):  
Failure Analysis ◽  
Focused Ion Beam ◽  
New Technologies ◽  
Ion Beam ◽  
Image Correlation ◽  
Microelectronic Devices ◽  
Overlay Technique ◽  
Correlation Techniques ◽  
Navigation Software ◽  
Image Format

Abstract New layout overlay technique has been developed based on standard image correlation techniques to support failure analysis in modern microelectronic devices, which are critical to analyze because they are realized in new technologies using sub-ìm design rules, chemical mechanical polishing techniques (CMP) and autorouted design techniques. As the new technique is realized as an extension of a standard CAD-navigation software and as it makes use of standard image format "TIFF" for data input, which is available at all modern equipments for failure analysis, these technique can be applied to all modern failure analysis methods. Here examples are given for three areas of application: circuit modification using Focused Ion Beam (FIB), support of preparation for backside inspection and fault localization using emission microscopy.

Digital image correlation of nanoscale deformation fields for local stress measurement in thin films

2006 ◽  
Vol 17 (20) ◽  
pp. 5264-5270 ◽  
Author(s):  
N Sabaté ◽  
D Vogel ◽  
A Gollhardt ◽  
J Marcos ◽  
I Gràcia ◽  
...  
Keyword(s):  
Thin Films ◽  
Digital Image Correlation ◽  
Digital Image ◽  
Stress Measurement ◽  
Local Stress ◽  
Image Correlation

Residual stress measurement in thin films at sub-micron scale using Focused Ion Beam milling and imaging

2012 ◽  
Vol 520 (6) ◽  
pp. 2073-2076 ◽  
Author(s):  
Xu Song ◽  
Kong Boon Yeap ◽  
Jing Zhu ◽  
Jonathan Belnoue ◽  
Marco Sebastiani ◽  
...  
Keyword(s):  
Thin Films ◽  
Residual Stress ◽  
Focused Ion Beam ◽  
Stress Measurement ◽  
Ion Beam ◽  
Residual Stress Measurement ◽  
Focused Ion Beam Milling

New Generation X-Ray Stress Measurement Using Debye Ring Image Data by Two-Dimensional Detection

2014 ◽  
Vol 783-786 ◽  
pp. 2103-2108 ◽  
Author(s):  
Toshihiko Sasaki
Keyword(s):  
Stress Analysis ◽  
Generation X ◽  
Stress Measurement ◽  
Image Data ◽  
Two Dimensional ◽  
Analysis Method ◽  
X Ray ◽  
Debye Ring ◽  
New Type ◽  
New Generation

Measuring theory of two types of X-ray stress analysis method was compared with each other. One is the conventional method, in which zero-or one-dimensional detector is used for obtaining diffracted beam and stress is determined using the standard sin2ψ method. Another is the new type of X-ray stress analysis method, in which two-dimensional detector is used to obtain whole Debye ring and stress is determined using the cosα method. An experiment was conducted to investigate the validity.

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