Changes in Optical Properties of GaAsN During Annealing

2005 ◽  
Vol 891 ◽  
Author(s):  
Ting Liu ◽  
Sandeep Chandril ◽  
Eric D. Schires ◽  
Nianqiang Wu ◽  
Xinqi Chen ◽  
...  
Keyword(s):  
Optical Properties ◽  
Molecular Beam Epitaxy ◽  
Quantum Dot ◽  
Photoelectron Spectroscopy ◽  
Molecular Beam ◽  
Annealing Temperature ◽  
Emission Spectra ◽  
X Ray ◽  
Annealing Temperatures ◽  
Gaas Substrates

ABSTRACTGaAs1−xNx layers and quantum dot-like structures were grown on (100) GaAs substrates by molecular beam epitaxy. The dependence of photoluminescence emission spectra on annealing temperature is consistent with literature at lower temperatures but after annealing at 750 °C a net red-shift is consistently observed. X-ray photoelectron spectroscopy measurements indicate that for different annealing times and temperatures, the nitrogen and arsenic surface concentrations changed compared to that of as-grown samples, specifically arsenic is lost from the material. Raman measurements are consistent with the trends in photoluminescence and also suggest the loss of arsenic occurs at higher annealing temperatures in both samples capped with GaAs and uncapped samples.

Rapid Thermal Annealing on GaSb Thin Films Grown by Molecular Beam Epitaxy on GaAs Substrates

2013 ◽  
Vol 787 ◽  
pp. 143-147 ◽  
Author(s):  
Rui Ting Hao ◽  
Jie Guo ◽  
Shu Kang Deng ◽  
Ying Liu ◽  
Yan Mei Miao ◽  
...  
Keyword(s):  
Thin Films ◽  
Optical Properties ◽  
Molecular Beam Epitaxy ◽  
Thermal Annealing ◽  
Rapid Thermal Annealing ◽  
Point Defects ◽  
Molecular Beam ◽  
Annealing Temperature ◽  
Gaas Substrates ◽  
Different Temperatures

Unintentionally doped GaSb films grown by Molecular Beam Epitaxy (MBE) on GaAs (001) substrates were annealed under different temperatures and time. It was found that the rapid thermal annealing (RTA) process can improve the optical properties. By changing annealing temperature and time, the optimized annealing temperature and times are found to be 650°C and 30s, respectively. Point defects and dislocations are two major kinds of defect in undoped GaSb thin films grown by MBE on GaAs (001) substrates.

Defects in HgCdTe grown by molecular beam epitaxy on GaAs substrates

2012 ◽  
Vol 20 (4) ◽  
Author(s):  
I. Izhnin ◽  
A. Izhnin ◽  
H. Savytskyy ◽  
O. Fitsych ◽  
N. Mikhailov ◽  
...  
Keyword(s):  
Optical Properties ◽  
Molecular Beam Epitaxy ◽  
Molecular Beam ◽  
Buffer Layers ◽  
Structural Defects ◽  
Donor Concentration ◽  
Ion Milling ◽  
Electrical And Optical Properties ◽  
Gaas Substrates ◽  
Cdte Buffer

AbstractThe Hall effect and photoluminescence measurements combined with annealing and/or ion milling were used to study the electrical and optical properties of HgCdTe films grown by molecular-beam epitaxy on GaAs substrates with ZnTe and CdTe buffer layers. Unintentional donor doping, likely from the substrate, which resulted in residual donor concentration of the order of 1015 cm−3, was observed in the films. Also, acceptor states, possibly related to structural defects, were observed.

Room-Temperature Operation of In0.5Ga0.5As Quantum Dot Lasers Grown on Misoriented GaAs Substrates by Molecular Beam Epitaxy

1999 ◽  
Vol 38 (Part 1, No. 1B) ◽  
pp. 605-607 ◽  
Author(s):  
Tzer-En Nee ◽  
Nien-Tze Yeh ◽  
Po-Wen Shiao ◽  
Jen-Inn Chyi ◽  
Ching-Ting Lee
Keyword(s):  
Molecular Beam Epitaxy ◽  
Quantum Dot ◽  
Room Temperature ◽  
Molecular Beam ◽  
Quantum Dot Lasers ◽  
Gaas Substrates ◽  
Room Temperature Operation

Fabrication of CdTe Quantum Dot Arrays on GaAs utilizng Nanoporous Alumina Masks

2004 ◽  
Vol 818 ◽  
Author(s):  
Mi Jung ◽  
Hong Seok Lee ◽  
Hong Lee Park ◽  
Sun-Il Mho
Keyword(s):  
Molecular Beam Epitaxy ◽  
Quantum Dot ◽  
Gaas Substrate ◽  
Molecular Beam ◽  
Pore Density ◽  
Nanoporous Alumina ◽  
Gaas Substrates ◽  
Cdte Qds ◽  
Self Assembled ◽  
Cdte Quantum Dot

AbstractThe uniformity and reproducibility of the CdTe QD arrays on the GaAs substrates can be improved by using a nanoporous mask. The CdTe QDs on the GaAs substrate were grown by a molecular beam epitaxy (MBE) method. The nanoporous alumina masks used for the fabrication of QD arrays have the thickness from 0.3 νm to 5 νm with the nanochannels of ∼ 80 nm diameter and the pore density of ∼ 1010cm−2. When the thickness of the alumina mask used for the CdTe QD growth was about 300 nm, the CdTe QD arrays formed as a replica of the nanochannels of the mask. Smaller self-assembled CdTe QDs located randomly were produced by using the thicker nanochannel mask than 0.5 νm. The thickness of the nanochannel mask controls the size of the CdTe/GaAs QDs.

Epitaxial Dy2O3 Thin Films Grown on Ge(100) Substrates by Molecular Beam Epitaxy

2010 ◽  
Vol 1252 ◽  
Author(s):  
Md. Nurul Kabir Bhuiyan ◽  
Mariela Menghini ◽  
Christel Dieker ◽  
Jin Won Seo ◽  
Jean-Pierre Locquet ◽  
...  
Keyword(s):  
Molecular Beam Epitaxy ◽  
Photoelectron Spectroscopy ◽  
Molecular Beam ◽  
High Mobility ◽  
High Energy ◽  
Epitaxial Relationship ◽  
Dysprosium Oxide ◽  
X Ray ◽  
Force Microscopy ◽  
Diffraction Patterns

AbstractDysprosium oxide (Dy2O3) films are grown epitaxially on high mobility Ge(100) substrates by molecular beam epitaxy system. Reflection high energy electron diffraction patterns and X-ray diffraction spectra show that single crystalline cubic Dy2O3 films are formed on Ge(100) substrates. The epitaxial-relationship is identified as Dy2O3 (110)║Ge(100) and Dy2O3 [001]║Ge[011]. Atomic force microscopy results show that the surface of the Dy2O3 film is uniform, flat and smooth with root mean square surface roughness of about 4.6Å. X-ray photoelectron spectroscopy including depth profiles confirms the composition of the films being close to Dy2O3. TEM measurements reveal a sharp, crystalline interface between the oxide and Ge.

Structural and Optical Properties of Zn1-XCoXO Thin Films Fabricated by Laser Molecular Beam Epitaxy

2011 ◽  
Vol 295-297 ◽  
pp. 1958-1963
Author(s):  
Jing Zhi Yang ◽  
Li Juan Fu ◽  
Xiao Peng Qi ◽  
Hong Yun Li
Keyword(s):  
Thin Films ◽  
Molecular Beam Epitaxy ◽  
Photoelectron Spectroscopy ◽  
Molecular Beam ◽  
Ambient Pressure ◽  
Visible Region ◽  
Hexagonal Structure ◽  
Axis Orientation ◽  
X Ray ◽  
Laser Molecular Beam Epitaxy

Zn1-xCoxO thin films on sapphire (0001) substrates were synthesized by laser molecular beam epitaxy (LMBE) method at various temperatures under a work ambient pressure of 5.0 x 10-5Pa condition. X-ray diffraction (XRD) spectra, UV–visible transmission spectra and X-ray photoelectron spectroscopy (XPS), photoluminescence (PL) spectra were employed to characterize the properties of samples. All samples were of wurtzite hexagonal structure with the preferential c-axis-orientation. Co2+ions incorporated into ZnO lattice and substituted for Zn2+ions. ZnLMM Auger spectrum implied Zn interstitials existed in sample. The optical transmission of all samples was relatively high in visible region. Two PL emission peaks located at 418 nm and 490 nm were assigned to the electron transition from the Zn interstitials to the top of the valence band and from the Zn interstitials to the Zn vacancies, respectively.

Structural and optical properties of lattice-matched ZnBeSe layers grown by molecular-beam epitaxy onto GaAs substrates

1997 ◽  
Vol 70 (26) ◽  
pp. 3564-3566 ◽  
Author(s):  
V. Bousquet ◽  
E. Tournié ◽  
M. Laügt ◽  
P. Vennéguès ◽  
J. P. Faurie
Keyword(s):  
Optical Properties ◽  
Molecular Beam Epitaxy ◽  
Molecular Beam ◽  
Structural And Optical Properties ◽  
Gaas Substrates ◽  
Lattice Matched
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