Soft-chemistry Route to P-I-N Heterostructured Quantum Dot Electroluminescence Device: All Solution-processed Polymer-Inorganic Hybrid QD-EL Device

2006 ◽  
Vol 959 ◽  
Author(s):  
Soon-Jae Kwon ◽  
Kyung-Sang Cho ◽  
Byoung-Lyong Choi ◽  
Byung-Ki Kim
Keyword(s):  
Quantum Dot ◽  
Electronic Band Structure ◽  
Low Cost ◽  
Sol Gel ◽  
Device Structure ◽  
Electronic Band ◽  
Solution Processed ◽  
Turn On ◽  
Ito Glass ◽  
Polymer Semiconductor

ABSTRACTp-i-n heterostructured quantum-dot electroluminescence (QD-EL) device was fabricated by soft-chemical process, which shows a low turn-on voltage comparable to OLEDs. To construct the multilayered device structure, p-type polymer semiconductor was deposited on the ITO glass by sequential process of coating and thermal curing, thereupon a few monolayers of QD was spin-coated. n-type metal-oxide film was deposited on top of the QD luminescence layer by sol-gel method, providing a facile and low-cost route for the ETL fabrication. Prior to solution-processed ETL construction, a post-treatment is performed using cross-linking agent, in order to chemically-immobilize the QDs. As a cathodic electrode, relatively air-stable aluminum was deposited. The constituent material as well as the electronic band structure of the integrated device guarantees operating stability in air and low turn-on voltage.

Solution-processed colloidal quantum dot photodiodes for low-cost SWIR imaging

2012 ◽  
Author(s):  
Ethan J. D. Klem ◽  
Jay Lewis ◽  
Christopher Gregory ◽  
Garry Cunningham ◽  
Dorota Temple
Keyword(s):  
Quantum Dot ◽  
Low Cost ◽  
Solution Processed ◽  
Colloidal Quantum Dot

scholarly journals Silicon Quantum Dot Light Emitting Diode at 620 nm

Micromachines ◽  
2019 ◽  
Vol 10 (5) ◽  
pp. 318 ◽  
Author(s):  
Hiroyuki Yamada ◽  
Naoto Shirahata
Keyword(s):  
Quantum Dot ◽  
High Performance ◽  
Light Emitting Diode ◽  
Optically Active ◽  
Driving Voltage ◽  
Device Structure ◽  
Light Emitting ◽  
Naked Eye ◽  
Turn On ◽  
Silicon Quantum Dot

Here we report a quantum dot light emitting diode (QLED), in which a layer of colloidal silicon quantum dots (SiQDs) works as the optically active component, exhibiting a strong electroluminescence (EL) spectrum peaking at 620 nm. We could not see any fluctuation of the EL spectral peak, even in air, when the operation voltage varied in the range from 4 to 5 V because of the possible advantage of the inverted device structure. The pale-orange EL spectrum was as narrow as 95 nm. Interestingly, the EL spectrum was narrower than the corresponding photoluminescence (PL) spectrum. The EL emission was strong enough to be seen by the naked eye. The currently obtained brightness (∼4200 cd/m2), the 0.033% external quantum efficiency (EQE), and a turn-on voltage as low as 2.8 V show a sufficiently high performance when compared to other orange-light-emitting Si-QLEDs in the literature. We also observed a parasitic emission from the neighboring compositional layer (i.e., the zinc oxide layer), and its intensity increased with the driving voltage of the device.

Dielectric and I-V Characteristic of Lead Titanate Thin Films Prepared on ITO Glass Substrate

2015 ◽  
Vol 1109 ◽  
pp. 461-465 ◽  
Author(s):  
Nurbaya Zainal ◽  
Mohd Hafiz Wahid ◽  
Mohammad Rusop
Keyword(s):  
Thin Films ◽  
Lead Titanate ◽  
High Performance ◽  
Annealing Temperature ◽  
Low Cost ◽  
Ferroelectric Properties ◽  
Sol Gel ◽  
Soda Lime ◽  
Soda Lime Glass ◽  
Ito Glass

Performance of lead titanate, (PbTiO3) thin films have been successfully investigated on microstructural properties, I-V characteristic, dielectric properties, and ferroelectric properties. PbTiO3offers variety of application as transducer, ferroelectric random access memory, transistor, high performance capacitor, sensor, and many more due to its ferroelectric behavior. Preparation of the films are often discussed in order to improve the structural properties, like existence of grain boundaries, particle uniformity, presents of microcrack films, porosities, and many more. Yet, researchers still prepare PbTiO3thin films at high crystallization temperature, certainly above than 600 ̊C to obtain single crystal perovskite structure that would be the reason to gain high spontaneous polarization behavior. Although this will results to high dielectric constant value, the chances that leads to high leakage current is a major failure in device performance. Thus, preparation the thin films at low annealing temperature quite an essential study which is more preferable deposited on low-cost soda lime glass. The study focuses on low annealing temperature of PbTiO3thin films through sol-gel spin coating method and undergo for dielectric and I-V measurements.

Influence of the Cation on the Surface Electronic Band Structure and Magnetic Properties of Mn:ZnS and Mn:CdS Quantum Dot Thin Films

2019 ◽  
Vol 123 (40) ◽  
pp. 24890-24898 ◽  
Author(s):  
Andrew J. Yost ◽  
Thilini K. Ekanayaka ◽  
Gautam Gurung ◽  
Gaurab Rimal ◽  
Sabit Horoz ◽  
...  
Keyword(s):  
Thin Films ◽  
Magnetic Properties ◽  
Quantum Dot ◽  
Band Structure ◽  
Electronic Band Structure ◽  
Electronic Band

Electronic and Mechanical Coupling in Elastically Bent ZnO Micro/Nanowires

2014 ◽  
Vol 1664 ◽  
Author(s):  
Xuewen Fu ◽  
Zhimin Liao ◽  
Dapeng Yu
Keyword(s):  
Elastic Strain ◽  
Electronic Band Structure ◽  
Coupling Effect ◽  
Low Cost ◽  
Chemical Properties ◽  
Strain Engineering ◽  
Near Band Edge ◽  
Engineering Strain ◽  
Electronic Band ◽  
Mechanical Coupling

ABSTRACTElastic engineering strain has been regarded as a low-cost and continuously variable manner for altering the physical and chemical properties of materials, and it becomes even more important at low-dimensionality because at micro/nanoscale, materials/structures can usually bear exceptionally high elastic strains before failure. The elastic strain effects are therefore greatly magnified in micro/nanoscale structures and should be of great potential in the design of novel functional devices. The purpose of this overview is to present a summary of our recently progress in the energy band engineering of elastically bent ZnO micro/nanowires. First, we present the electronic and mechanical coupling effect in bent ZnO nanowires. Second, we summary the bending strain gradient effect on the near-band-edge (NBE) emission photon energy of bent ZnO micro/nanowires. Third, we show that the strain can induce exciton fine-structure splitting and shift in ZnO microwires. Our recent progresses illustrate that the electronic band structure of ZnO micro/nanowires can be dramatically tuned by elastic strain engineering, and point to potential future applications based on the elastic strain engineering of ZnO micro/nanowires.

scholarly journals Solution-processed inorganic copper(i) thiocyanate as a hole injection layer for high-performance quantum dot-based light-emitting diodes

RSC Advances ◽  
2017 ◽  
Vol 7 (42) ◽  
pp. 26322-26327 ◽  
Author(s):  
Tao Ding ◽  
Ning Wang ◽  
Chen Wang ◽  
Xinghua Wu ◽  
Wenbo Liu ◽  
...  
Keyword(s):  
Quantum Dot ◽  
High Performance ◽  
Light Emitting Diodes ◽  
Hole Injection ◽  
Solution Processed ◽  
Light Emitting ◽  
Hole Injection Layer ◽  
Turn On ◽  
Injection Material

The introduction of CuSCN as the hole injection material significantly improved the turn-on voltage of quantum dot-based LEDs.

Efficient PbS quantum dot solar cells employing a conventional structure

2017 ◽  
Vol 5 (45) ◽  
pp. 23960-23966 ◽  
Author(s):  
Kunyuan Lu ◽  
Yongjie Wang ◽  
Jianyu Yuan ◽  
Zequn Cui ◽  
Guozheng Shi ◽  
...  
Keyword(s):  
Quantum Dots ◽  
Solar Cells ◽  
Quantum Dot ◽  
Low Cost ◽  
Lead Chalcogenide ◽  
Solution Processed ◽  
Quantum Dot Solar Cells ◽  
Conventional Structure ◽  
New Generation ◽  
Pbs Quantum Dot

New-generation solar cells based on colloidal lead chalcogenide (PbX) quantum dots (CQDs) are promising low-cost solution-processed photovoltaics.

Novel Carbazole-Acridine-Based Hole Transport Polymer for Low Turn-on Voltage of Green Quantum Dot Light-Emitting Diodes

2021 ◽  
Author(s):  
Chai Won Kim ◽  
Ji Hye Lee ◽  
Seunguk Cho ◽  
Hyung Jong Kim ◽  
Jin Hyo Hwang ◽  
...  
Keyword(s):  
Quantum Dot ◽  
Light Emitting Diodes ◽  
Hole Transport ◽  
Side Chain ◽  
Solution Processed ◽  
Light Emitting ◽  
Turn On

Herein, a novel hole transport polymer, P-CzAc, for solution-processed green quantum dot light-emitting diodes (QD-LEDs) was synthesized. P-CzAc consists of a polystyrene backbone and 10-(9H-carbazol-3-yl)-9,9-dimethyl-9,10-dihydroacridine as side-chain pendants. The design...

Investigation of the Electron Energy Spectrum in a Three Dimensional Regimented Tetragonal Quantum Dot Superlattice

2001 ◽  
Vol 677 ◽  
Author(s):  
Olga L. Lazarenkova ◽  
Alexander A. Balandin
Keyword(s):  
Quantum Dots ◽  
Energy Spectrum ◽  
Quantum Dot ◽  
Electron Energy ◽  
Electronic Band Structure ◽  
Three Dimensional ◽  
Electron Energy Spectrum ◽  
Real Crystal ◽  
Electronic Band ◽  
Gaas Quantum Dot

ABSTRACTWe analyze the electron energy spectrum in three-dimensional regimented arrays of semiconductor quantum dots. The coupling among quantum dots results in formation of three- dimensional electron mini-bands. Changing the size of quantum dots, inter-dot distance, barrier height and regimentation, one can control the electronic band structure of this quantum dot superlattice, which can also be referred to as quantum dot crystal due to its structure and energy spectrum that resemble those of a real crystal. Results of computer simulations carried out for a tetragonal InAs/GaAs quantum dot superlattice show that the electron density of states, effective mass tensor and other properties are different from those of bulk and conventional quantum well superlattices.

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