Reproducible Resistance Switching in Ni/NiO/Ni Trilayer

2007 ◽  
Vol 997 ◽  
Author(s):  
Hisashi Shima ◽  
Fumiyoshi Takano ◽  
Hiro Akinaga ◽  
Isao H Inoue ◽  
Hidenori Takagi
Keyword(s):  
Thin Film ◽  
High Speed ◽  
Random Access ◽  
Random Access Memory ◽  
Resistance Switching ◽  
Access Memory ◽  
Pt Electrode ◽  
Resistance Random Access Memory ◽  
Nio Thin Film ◽  
Non Volatile Memory

AbstractThe resistance random access memory is attracting much attention as a high-density and high-speed non-volatile memory, having large resistance switching ration and good affinity with the conventional CMOS technologies. We demonstrate the resistance switching in the NiO thin film without using Pt electrode.

Bipolar Switching Properties of the Manganese Oxide Thin Film RRAM Devices

2014 ◽  
Vol 602-603 ◽  
pp. 1056-1059 ◽  
Author(s):  
Min Chang Kuan ◽  
Fann Wei Yang ◽  
Chien Min Cheng ◽  
Kai Huang Chen ◽  
Jian Tz Lee
Keyword(s):  
Thin Film ◽  
Thin Films ◽  
Manganese Oxide ◽  
Random Access ◽  
Random Access Memory ◽  
Memory Devices ◽  
Access Memory ◽  
Resistance Random Access Memory ◽  
Non Volatile Memory ◽  
Volatile Memory

Up to now, the various non-volatile memory devices such as, ferroelectric random access memory (FeRAM), magnetron random access memory (MRAM), and resistance random access memory (RRAM) were widely discussed and investigated. For these nonvolatile memory devices, the resistance random access memory (RRAM) devices will play an important role because of its non-destructive readout, low operation voltage, high operation speed, long retention time, and simple structure. The resistance random access memory (RRAM) devices were only consisting of one resistor and one corresponding transistor. The subject of this work was to study the characteristics of manganese oxide (MnO) thin films deposited on transparent conductive thin film using the rf magnetron sputtering method. The optimal sputtering conditions of as-deposited manganese oxide (MnO) thin films were the rf power of 80 W, chamber pressure of 20 mTorr, substrate temperature of 580°C, and an oxygen concentration of 40%. The basic mechanisms for the bistable resistance switching were observed. In which, the non-volatile memory and switching properties of the manganese oxide (MnO) thin film structures were reported and the relationship between the memory windows and electrical properties was investigated.

Voltage polarity dependent low-power and high-speed resistance switching in CoO resistance random access memory with Ta electrode

2008 ◽  
Vol 93 (11) ◽  
pp. 113504 ◽  
Author(s):  
Hisashi Shima ◽  
Fumiyoshi Takano ◽  
Hidenobu Muramatsu ◽  
Hiro Akinaga ◽  
Yukio Tamai ◽  
...  
Keyword(s):  
Low Power ◽  
High Speed ◽  
Random Access ◽  
Random Access Memory ◽  
Resistance Switching ◽  
Access Memory ◽  
Voltage Polarity ◽  
Resistance Random Access Memory

Effects of Thickness on Resistance Switching Properties of ZnMn2O4 Films Deposited by Magnetron Sputtering

2014 ◽  
Vol 941-944 ◽  
pp. 1275-1278
Author(s):  
Hua Wang ◽  
Zhi Da Li ◽  
Ji Wen Xu ◽  
Yu Pei Zhang ◽  
Ling Yang ◽  
...  
Keyword(s):  
Magnetron Sputtering ◽  
Random Access ◽  
Random Access Memory ◽  
Resistance Switching ◽  
Switching Behavior ◽  
Si Substrate ◽  
Access Memory ◽  
Resistive Switching Behavior ◽  
Bipolar Resistive Switching ◽  
Resistance Random Access Memory

ZnMn2O4films for resistance random access memory (RRAM) were fabricated on p-Si substrate by magnetron sputtering. The effects of thickness onI-Vcharacteristics, resistance switching behavior and endurance characteristics of ZnMn2O4films were investigated. The ZnMn2O4films with a structure of Ag/ZnMn2O4/p-Si exhibit bipolar resistive switching behavior. With the increase of thickness of ZnMn2O4films from 0.83μm to 2.3μm, both theVONand the number of stable repetition switching cycle increase, but theRHRS/RLRSratio decrease, which indicated that the ZnMn2O4films with a thickness of 0.83μm has the biggestRHRS/RLRSratio and the lowestVONandVOFF, but the worst endurance characteristics.

Design principles of tuning oxygen vacancy diffusion in SrZrO3 for resistance random access memory

2015 ◽  
Vol 3 (16) ◽  
pp. 4081-4085 ◽  
Author(s):  
Zhonglu Guo ◽  
Linggang Zhu ◽  
Jian Zhou ◽  
Zhimei Sun
Keyword(s):  
Oxygen Vacancy ◽  
Oxygen Vacancies ◽  
Random Access ◽  
Random Access Memory ◽  
Vacancy Diffusion ◽  
Access Memory ◽  
Promising Candidate ◽  
Resistance Random Access Memory ◽  
Non Volatile Memory ◽  
Oxygen Vacancy Diffusion

Resistance random access memory (RRAM) is known to be a promising candidate for next generation non-volatile memory devices, in which the diffusion of oxygen vacancies plays a key role in resistance switching.

Hopping conduction properties of the Sn:SiO X thin-film resistance random access memory devices induced by rapid temperature annealing procedure

2015 ◽  
Vol 119 (4) ◽  
pp. 1609-1613 ◽  
Author(s):  
Kai-Huang Chen ◽  
Kuan-Chang Chang ◽  
Ting-Chang Chang ◽  
Tsung-Ming Tsai ◽  
Kuo-Hsiao Liao ◽  
...  
Keyword(s):  
Thin Film ◽  
Random Access ◽  
Random Access Memory ◽  
Hopping Conduction ◽  
Film Resistance ◽  
Access Memory ◽  
Resistance Random Access Memory ◽  
Rapid Temperature ◽  
Annealing Procedure ◽  
Conduction Properties

Resistance Random Access Memory Based on a Thin Film of CdS Nanocrystals Prepared via Colloidal Synthesis

Small ◽  
2012 ◽  
Vol 8 (18) ◽  
pp. 2849-2855 ◽  
Author(s):  
Yong Chan Ju ◽  
Seungwook Kim ◽  
Tae-Geun Seong ◽  
Sahn Nahm ◽  
Haegeun Chung ◽  
...  
Keyword(s):  
Thin Film ◽  
Random Access ◽  
Random Access Memory ◽  
Colloidal Synthesis ◽  
Access Memory ◽  
Cds Nanocrystals ◽  
Resistance Random Access Memory

Preparation of Ge2Sb2Te5 thin film for Phase Change Random Access Memory by RF Magnetron Sputtering and DC Magnetron Sputtering

2006 ◽  
Vol 918 ◽  
Author(s):  
Shin Kikuchi ◽  
Dong Yong Oh ◽  
Isao Kimura ◽  
Yutaka Nishioka ◽  
Koukou Suu
Keyword(s):  
Thin Film ◽  
Magnetron Sputtering ◽  
Phase Change ◽  
High Speed ◽  
Random Access ◽  
Random Access Memory ◽  
Rf Magnetron Sputtering ◽  
Dc Magnetron Sputtering ◽  
Access Memory ◽  
Target Composition

AbstractPhase Change Random Access Memory [PRAM] is one of the candidate for next generation memory due to its non-volitality, high speed, high density and compatibility with Si-based semiconductor process. Ge2Sb2Te5 [GST] thin film , an active layer in this device, is utilized because it has the well-known property of rapid crystallization without phase separation in erasable compact discs industry.We investigated the difference of the character of the GST thin film with various sputtering methods. 100nm thick GST films were prepared with DC magnetron sputtering and RF magnetron sputtering for this experiment. XRF, XRD,SEM and four point probe measurement are used to analyze the electrical properties of these films.As for the composition of the DC sputtered GST films, Te was insufficient from target composition, while the composition of RF sputtered GST films were almost same as target composition. The RF sputtered GST films were composed of hcp by 400°C annealing. On the other hand, the DC sputtered films were mixed-phase of fcc and hcp. The resistivity of DC Sputtered GST films was higher than RF sputtered film cause of poor crystallinity. The uniformity of RF sputtered film was better than DC sputtered film.

Sign in / Sign up

Export Citation Format

Share Document