DLTS Characterization of N-Type Silicon After Rapid Thermal Annealing of Boron Implantation

1985 ◽  
Vol 52 ◽  
Author(s):  
C. M. Ransom ◽  
T. O. Sedgwick ◽  
S. A. Cohen
Keyword(s):  
Thermal Annealing ◽  
Rapid Thermal Annealing ◽  
Schottky Diode ◽  
Electron Traps ◽  
Majority Carrier ◽  
Type Silicon ◽  
Isochronal Anneal ◽  
Boron Implantation ◽  
Carrier Traps

ABSTRACTDLTS measurements show that majority-carrier traps exist after quartz-lamp, rapid-thermal annealing (RTA) activation of B+ and BF2+ ion implants in n-type silicon. Levels at Ec-0.17, 0.27, 0.44 and 0.57 eV annealed out with an additional 20 minute isochronal anneal at 550°C in argon. A stable defect at 0.37 eV existed at temperatures above 750°C. DLTS measurements of a Schottky diode on n-type silicon after only RTA indicated that electron traps could be introduced into n-type silicon by the RTA alone.

Characterization of Traps in GaN pn Junctions Grown by MOCVD on GaN Substrate Using Deep-Level Transient Spectroscopy

2008 ◽  
Vol 600-603 ◽  
pp. 1297-1300 ◽  
Author(s):  
Yutaka Tokuda ◽  
Youichi Matsuoka ◽  
Hiroyuki Ueda ◽  
Osamu Ishiguro ◽  
Narumasa Soejima ◽  
...  
Keyword(s):  
Deep Level Transient Spectroscopy ◽  
Minority Carrier ◽  
Deep Level ◽  
Electron Traps ◽  
Majority Carrier ◽  
Sapphire Substrates ◽  
Carrier Traps ◽  
Pn Junctions ◽  
Transient Spectroscopy

Minority- and majority-carrier traps were studied in GaN pn junctions grown homoepitaxially by MOCVD on n+ GaN substrates. Two majority-carrier traps (MA1,MA2) and three minority-carrier traps (MI1, MI2, MI3) were detected by deep-level transient spectroscopy. MA1 and MA2 are electron traps commonly observed in n GaN on n+ GaN and sapphire substrates. No dislocation-related traps were observed in n GaN on n+ GaN. Among five traps in GaN pn on GaN, MI3 is the main trap with the concentration of 2.5x1015 cm-3.

Characterization of Ge nanocrystals in a-SiO2 synthesized by rapid thermal annealing

1999 ◽  
Vol 144-145 ◽  
pp. 697-701 ◽  
Author(s):  
W.K Choi ◽  
S Kanakaraju ◽  
Z.X Shen ◽  
W.S Li
Keyword(s):  
Thermal Annealing ◽  
Rapid Thermal Annealing ◽  
Ge Nanocrystals

Characterization of the TiW‐GaAs interface after rapid thermal annealing

1989 ◽  
Vol 66 (10) ◽  
pp. 4775-4779 ◽  
Author(s):  
M. de Potter ◽  
W. De Raedt ◽  
M. Van Hove ◽  
G. Zou ◽  
H. Bender ◽  
...  
Keyword(s):  
Thermal Annealing ◽  
Rapid Thermal Annealing

Micro-Raman characterization of Ge diffusion and Si stress change in thin epitaxial Si1−xGex layers on Si(100) after rapid thermal annealing

2012 ◽  
Vol 27 (9) ◽  
pp. 1314-1323 ◽  
Author(s):  
Chun-Wei Chang ◽  
Min-Hao Hong ◽  
Wei-Fan Lee ◽  
Kuan-Ching Lee ◽  
Li-De Tseng ◽  
...  
Keyword(s):  
Thermal Annealing ◽  
Rapid Thermal Annealing ◽  
Stress Change ◽  
Image Position ◽  
Raman Characterization

Abstract

Anomalous Transient Diffusion of Ion Implanted Boron during Rapid Thermal Annealing

1989 ◽  
Vol 146 ◽  
Author(s):  
Y. M. Kim ◽  
G. Q. Lo ◽  
D. L. Kwong ◽  
H. H. Tseng ◽  
R. Hance
Keyword(s):  
Thermal Annealing ◽  
Rapid Thermal Annealing ◽  
Anomalous Diffusion ◽  
Low Dose ◽  
Silicon Wafers ◽  
Silicon Ions ◽  
Defect Evolution ◽  
Boron Implantation ◽  
Silicon Implantation ◽  
Ion Implanted

ABSTRACTEffects of defect evolution during rapid thermal annealing (RTA) on the anomalous diffusion of ion implanted boron have been studied by implanting silicon ions prior to boron implantation with doses ranging from 1 × 1014cm−2 to 1 × 1016cm−2 at energies ranging from 20 to 150 KeV into silicon wafers. Diffusion of boron atoms implanted into a Si preamorphized layer during RTA is found to be anomalous in nature, and the magnitude of boron displacement depends on the RTA temperature. While RTA of preamorphized samples at 1150°C shows an enhanced boron displacement compared to that in crystalline samples, a reduced displacement is observed in preamorphized samples annealed by RTA at 1000°C. In addition, low dose pre-silicon implantation enhances the anomalous displacement significantly, especially at high RTA temperatures (1 150°C). Finally, the anomalous diffusion is found to depend strongly on the defect evolution during RTA.

Micro-Raman Characterization of Cluster Carbon Implanted Si before and after Rapid Thermal Annealing

2016 ◽  
Vol 75 (8) ◽  
pp. 605-613
Author(s):  
W. S. Yoo ◽  
K. Kang ◽  
H. Nishigaki ◽  
N. Hasuike ◽  
H. Harima ◽  
...  
Keyword(s):  
Thermal Annealing ◽  
Rapid Thermal Annealing ◽  
Before And After ◽  
Raman Characterization

Characterization of Ti:LiNbo3 Optical Channel Waveguides Fabricated using Rapid Thermal Annealing

1989 ◽  
Vol 152 ◽  
Author(s):  
Uma Ramabadran ◽  
Gregory N. De Brabander ◽  
Joseph T. Boyd ◽  
Howard E. Jackson ◽  
S. Sriram
Keyword(s):  
Thermal Annealing ◽  
Rapid Thermal Annealing ◽  
Optical Waveguides ◽  
Propagation Loss ◽  
Optical Channel ◽  
Preliminary Results ◽  
Raman Microprobe ◽  
Channel Waveguides ◽  
Raman Response

ABSTRACTRapid thermal annealing has been used to initiate diffusion of Ti in LiNbO3 for the fabrication of optical waveguides. The sample with the most rapid initial ramp of temperature to 875 C was found to have the lowest propagation loss of 1 dB/cm. In order to more fully understand these channel waveguides, we have utilized Raman microprobe spectroscopy. Preliminary results suggest that the presence of the Ti in the LiNbO3 lattice dramatically alters the Raman response.

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