In-plane Molecular Alignment in Thin Films of Pentacene Grown by Solution Casting and Performance of Thin Film Transistors

2007 ◽  
Vol 1003 ◽  
Author(s):  
Takashi Minakata ◽  
Yutaka Nastume
Keyword(s):  
Thin Films ◽  
Single Crystal ◽  
Crystalline Structure ◽  
Grazing Incidence ◽  
Growth Direction ◽  
Molecular Alignment ◽  
Patterned Substrate ◽  
Polarized Microscopy ◽  
Transmission Electron ◽  
And Performance

AbstractWe have fabricated solution-processed thin films of pentacene by casting solution on a substrate and vaporizing solvent. The films with large oriented platelet domains were obtained by directionally grown condition. Molecular alignment in the directionally grown grains has been studied by several kinds of structural analysis. Oriented domains with the width of several hundreds microns and the length in an order of cm of the films were confirmed by polarized microscopy. In-plane crystalline structure of the domain has been studied by grazing incidence X-ray diffraction (GIXD) and strong anisotropy of in-plane crystalline structure was confirmed. Crystalline growth direction of the film was determined to be b-axis from both transmission electron diffraction and GIXD. Thin films transistors (TFTs) with directionally oriented domains of the films were fabricated on electrode patterned substrate. The observed maximum carrier mobility of 2.7 cm2/Vs was comparable to that of single crystal, which indicated that the quality of the film was almost identical with the single crystal. Correlation between FET performance and growth direction was studied and preferred performance of TFTs with the film grown perpendicularly to the channel was observed.

scholarly journals Single-Crystal-like Structure of Poly(9,9-dioctylfluorene) Thin Films Evaluated by Synchrotron-Sourced Grazing-Incidence X-ray Diffraction

2007 ◽  
Vol 39 (12) ◽  
pp. 1306-1311 ◽  
Author(s):  
Masahiro Misaki ◽  
Shuichi Nagamatsu ◽  
Masayuki Chikamatsu ◽  
Yuji Yoshida ◽  
Reiko Azumi ◽  
...  
Keyword(s):  
Thin Films ◽  
Single Crystal ◽  
Grazing Incidence ◽  
X Ray Diffraction ◽  
X Ray

Characterization of spray-pyrolized superconducting YBaCuO thin films on single-crystal MgO by transmission electron microscopy

1990 ◽  
Vol 5 (8) ◽  
pp. 1605-1611 ◽  
Author(s):  
S. J. Golden ◽  
H. Isotalo ◽  
M. Lanham ◽  
J. Mayer ◽  
F. F. Lange ◽  
...  
Keyword(s):  
Electron Microscopy ◽  
Thin Films ◽  
Transmission Electron Microscopy ◽  
Film Thickness ◽  
Single Crystal ◽  
Processing Parameters ◽  
Transmission Electron ◽  
Film Substrate ◽  
Mgo Substrate

Superconducting YBaCuO thin films have been fabricated on single-crystal MgO by the spray-pyrolysis of nitrate precursors. The effects on the superconductive behavior of processing parameters such as time and temperature of heat treatment and film thickness were investigated. The superconductive behavior was found to be strongly dependent on film thickness. Films of thickness 1 μm were found to have a Tc of 67 K while thinner films showed appreciably degraded properties. Transmission electron microscopy studies have shown that the heat treatments necessary for the formation of the superconductive phase (for example, 950 °C for 30 min) also cause a substantial degree of film-substrate interdiffusion. Diffusion distances for Cu in the MgO substrate and Mg in the film were found to be sufficient to explain the degradation of the superconductive behavior in films of thickness 0.5 μm and 0.2 μm. From the concentration profiles obtained by EDS analysis diffusion coefficients at 950 °C for Mg into the YBaCuO thin film and for Cu into the MgO substrate were evaluated as 3 × 10−19 m2/s and 1 × 10−17 m2/s, respectively.

Fine Structure of Sputtered Ni/Ti Multilayered Thin Films Studied by HREM

1994 ◽  
Vol 343 ◽  
Author(s):  
M. J. Casanove ◽  
E. Snoeck ◽  
C. Roucau ◽  
J. L. Hutchison ◽  
Z. Jiang ◽  
...  
Keyword(s):  
Thin Films ◽  
Fine Structure ◽  
Growth Direction ◽  
Cross Sectional ◽  
Neutron Optics ◽  
Transmission Electron ◽  
Amorphous Zone ◽  
Sharp Interfaces ◽  
Multilayered Thin Films ◽  
Neutron Guides

ABSTRACTNi/Ti multilayered thin films can be efficient neutron guides and are therefore of great interest in neutron optics. Ni/Ti and NiC/Ti multilayers with various layer thicknesses were fabricated by magnetron sputtering and characterized by high resolution transmission electron microscopy (TEM). The TEM studies, performed on cross-sectional specimens, revealed that both kinds of layers were textured and snowed coherence in the growth direction. The presence of a 2 nra thick amorphous zone at the Ni/Ti interface in the carbon free thin films was also confirmed. On the contrary, sharp interfaces were obtained in NiC/Ti multilayers. The fine structure of the different layers will also be reported.

scholarly journals Influence of fluorination in π-extended backbone polydiketopyrrolopyrroles on charge carrier mobility and depth-dependent molecular alignment

2015 ◽  
Vol 3 (34) ◽  
pp. 8916-8925 ◽  
Author(s):  
C. J. Mueller ◽  
E. Gann ◽  
C. R. McNeill ◽  
M. Thelakkat
Keyword(s):  
Thin Films ◽  
Charge Carrier ◽  
Carrier Mobility ◽  
Grazing Incidence ◽  
Charge Carrier Mobility ◽  
Molecular Alignment ◽  
X Ray ◽  
X Ray Scattering ◽  
Semiconductor Properties ◽  
Ray Scattering

The degree of fluorination in π-extended polydiketopyrrolopyrroles is correlated with semiconductor properties in transistors and an improved molecular alignment in thin films using depth-dependent grazing incidence X-ray scattering.

Crystallographic and Magnetic Properties of CoCrPt Thin Films Investigated Using Single-Crystal Perpendicular Magnetic Thin Film Samples

2002 ◽  
Vol 721 ◽  
Author(s):  
Masaaki Futamoto ◽  
Kouta Terayama ◽  
Katsuaki Sato ◽  
Nobuyuki Inaba ◽  
Yoshiyuki Hirayama
Keyword(s):  
Thin Film ◽  
Thin Films ◽  
Magnetic Properties ◽  
Single Crystal ◽  
Film Plane ◽  
Magnetic Thin Film ◽  
X Ray Diffraction ◽  
Easy Magnetization ◽  
Transmission Electron ◽  
Magnetization Axis

AbstractConditions to prepare good single-crystal CoCrPt magnetic thin film with the easy magnetization axis perpendicular to the film plane were investigated using oxide single-crystal substrates, Al2O3(0001), LaAlO3(0001), mica(0001), SrTiO3(111), and MgO(111). The best CoCrPt(0001) single-crystal thin film was obtained on an Al2O3(0001) substrate employing a non-magnetic CoCrRu underlayer. The crystallographic quality of single-crystal thin film was investigated using X-ray diffraction and high-resolution transmission electron microscopy. Some intrinsic magnetic properties (Hk, Ku) were determined for the single-crystal CoCrxPty thin films for a compositional range of x=17-20at% and y=0-17at%.

Epitaxial growth and magnetic behavior of NiFe2O4 thin films

1996 ◽  
Vol 11 (5) ◽  
pp. 1187-1198 ◽  
Author(s):  
S. Venzke ◽  
R. B. van Dover ◽  
Julia M. Phillips ◽  
E. M. Gyorgy ◽  
T. Siegrist ◽  
...  
Keyword(s):  
Thin Films ◽  
Single Crystal ◽  
Structural Changes ◽  
Amorphous Material ◽  
Magnetic Behavior ◽  
Bulk Single Crystal ◽  
X Ray Diffraction ◽  
X Ray ◽  
Ion Channeling ◽  
Transmission Electron

Thin films of NiFe2O4 were deposited on SrTiO3 (001) and Y0.15Zr0.85O2 (yttria-stabilized zirconia) (001) and (011) substrates by 90°-off-axis sputtering. Ion channeling, x-ray diffraction, and transmission electron microscopy studies reveal that films grown at 600 °C consist of ∼300 Å diameter grains separated by thin regions of highly defective or amorphous material. The development of this microstructure is attributed to the presence of rotated or displaced crystallographic domains and is comparable to that observed in other materials grown on mismatched substrates (e.g., GaAs/Si or Ba2YCu3O7/MgO). Postdeposition annealing at 1000 °C yields films that are essentially single crystal. The magnetic properties of the films are strongly affected by the structural changes; unannealed films are not magnetically saturated even in an applied field of 55 kOe, while the annealed films have properties comparable to those of bulk, single crystal NiFe2O4. Homoepitaxial films grown at 400 °C also are essentially single crystal.

Stereo-epitaxial growth of single-crystal Ni nanowires and nanoplates from aligned seed crystals

Nanoscale ◽  
2016 ◽  
Vol 8 (19) ◽  
pp. 10291-10297 ◽  
Author(s):  
Hyoban Lee ◽  
Youngdong Yoo ◽  
Taejoon Kang ◽  
Jiyoung Lee ◽  
Eungwang Kim ◽  
...  
Keyword(s):  
Single Crystal ◽  
Epitaxial Growth ◽  
Crystalline Structure ◽  
Vapor Phase ◽  
Growth Direction ◽  
Single Crystalline ◽  
Seed Crystals ◽  
Sapphire Substrates

Vertical Ni NWs, inclined Ni NWs, and vertical Ni nanoplates were epitaxially grown on sapphire substrates with a single-crystalline structure in the vapor phase. The morphology and growth direction of Ni nanostructures are determined by Ni seed crystals.

Microstructural Studies of Ferroelectric Bi2VO5.5 Thin Films With LaNiO3 Electrodes

1994 ◽  
Vol 341 ◽  
Author(s):  
D. Prasad Beesabathina ◽  
L. Salmanca-Riba ◽  
M. S. Hegde ◽  
K. M. Satyalakshmi ◽  
K. V. R. Prasad ◽  
...  
Keyword(s):  
Thin Films ◽  
Growth Direction ◽  
Buffer Layers ◽  
X Ray Diffraction ◽  
Epitaxial Relationship ◽  
X Ray ◽  
Transmission Electron ◽  
Lattice Images ◽  
Relationship Of ◽  
Microstructural Studies

AbstractThin films of Bi2VO5.5 (BVO), a vanadium analog of the n = I member of the Aurivillius family, have been prepared by pulsed laser deposition. The BVO films grow along the [001] direction on LaNiO3(LNO) and YBa2Cu3O7 (YBCO) electrode buffer layers on LaA- IO3(LAO) substrates as obtained from X-ray diffraction studies. The microstructure of the films and of the interfaces within the film and between the film and the substrate were characterized using transmission electron microscopy. The in-plane epitaxial relationship of the rhombohedral LNO on perovskite LAO was [100] LNO // [100] LAO and [001] LNO // [001] LAO. High resolution lattice images showed a sharp interface between LNO and LAO. However, the LNO film is twinned with a preferred orientation along the growth direction. The BVO layer is single crystalline on both LNO/LAO and YBCO/LAO with the caxis parallel to the growth direction except for a thin layer of about 400 Å at the interface which is polycrystalline.

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