PECVD Silicon Carbide as a Thin Film Packaging Material for Microfabricated Neural Electrodes

2007 ◽  
Vol 1009 ◽  
Author(s):  
Allison Hess ◽  
Rocco Parro ◽  
Jiangang Du ◽  
Jeremy Dunning ◽  
Maximillian Scardelletti ◽  
...  
Keyword(s):  
Thin Film ◽  
Silicon Carbide ◽  
Chemical Vapor ◽  
Leakage Currents ◽  
Si Substrates ◽  
Thin Film Coatings ◽  
Flat Interface ◽  
Neural Electrodes ◽  
Moisture Barriers ◽  
Sic Films

AbstractThis paper reports our effort to develop amorphous silicon carbide (a-SiC) films for use as hermetic thin film coatings for mechanically-flexible neural electrodes. In our work, the a-SiC films were deposited by plasma enhanced chemical vapor deposition (PECVD) using two distinct methods, namely a single precursor approach using trimethylsilane, and a dual precursor approach using methane (CH4) and silane (SiH4). The mechanical properties of films deposited on Si substrates were characterized using the wafer curvature and load-deflection methods. The effectiveness of the films as moisture barriers for polyimide substrates was characterized by measuring the leakage currents of SiC-coated interdigitated electrode structures soaked in PBS. A microfabricated prototype of the flat interface nerve electrode (FINE) based on a flexible polyimide substrate and a PECVD SiC capping layer was fabricated using a monolithic process based on conventional micromachining techniques. To facilitate this approach, a reactive ion etching process was developed that exhibited high etch rates and high selectively to the SiC films.

Hot-mesh Chemical Vapor Deposition for 3C-SiC Growth on Si and SiO2

2005 ◽  
Vol 862 ◽  
Author(s):  
Kanji Yasui ◽  
Jyunpei Eto ◽  
Yuzuru Narita ◽  
Masasuke Takata ◽  
Tadashi Akahane
Keyword(s):  
Chemical Vapor Deposition ◽  
Vapor Deposition ◽  
Chemical Vapor ◽  
X Ray Diffraction ◽  
Rocking Curve ◽  
Mesh Structure ◽  
X Ray ◽  
Si Substrates ◽  
Substrate Temperatures ◽  
Sic Films

AbstractThe crystal growth of SiC films on (100) Si and thermally oxidized Si (SiO2/Si) substrates by hot-mesh chemical vapor deposition (HMCVD) using monomethylsilane as a source gas was investigated. A mesh structure of hot tungsten (W) wire was used as a catalyzer. At substrate temperatures above 750°C and at a mesh temperature of 1600°C, 3C-SiC crystal was epitaxially grown on (100) Si substrates. From the X-ray rocking curve spectra of the (311) peak, SiC was also epitaxially grown in the substrate plane. On the basis of the X-ray diffraction (XRD) measurements, on the other hand, the growth of (100)-oriented 3C-SiC films on SiO2/Si substrates was determined to be achieved at substrate temperatures of 750-800°C, while polycrystalline SiC films, at substrate temperatures above 850°C. From the dependence of growth rate on substrate temperature and W-mesh temperature, the growth mechanism of SiC crystal by HMCVD was discussed.

Oxidation of PECVD SiC Deposited from Trimethylsilane

1998 ◽  
Vol 555 ◽  
Author(s):  
Peter A. DiFonzo ◽  
Mona Massuda ◽  
James T. Kelliher
Keyword(s):  
Thin Films ◽  
Silicon Carbide ◽  
Oxidation Kinetics ◽  
Stoichiometric Composition ◽  
Chemical Vapor ◽  
Oxidation Rates ◽  
Chemical Vapor Deposited ◽  
Kinetics Of ◽  
Sic Films ◽  
Deposition Conditions

AbstractThe stoichiometric composition and oxidation rates ( wet or dry ) of plasma enhanced chemical vapor deposited (PECVD) silicon carbide (SiC) films are effected by the deposition conditions of trimethylsilane (3MS) and carrier gas. We report the oxidation kinetics of SiC thin films deposited in a modified commercial PECVD reactor. A standard horizontal atmospheric furnace in the temperature range of 925–1100°C was used in the oxidation. Oxidized films were measured optically by commercially available interferometer and ellipsometer tools in addition to mechanically using a commercially available profilometer. Activation energies of the parabolic rates were in the range of 20.93 to 335.26 kJ/mol.

A Novel Silicon-Carbon Precursor for Oligomer Chemical Vapor Deposition of Silicon Carbide for Harsh Environmental Applications

2001 ◽  
Vol 697 ◽  
Author(s):  
Ulrike Futschik ◽  
Harry Efstathiadis ◽  
James Castracane ◽  
Alain E. Kaloyeros ◽  
Leo Macdonald ◽  
...  
Keyword(s):  
Silicon Carbide ◽  
Chemical Vapor Deposition ◽  
Vapor Deposition ◽  
Chemical Vapor ◽  
Ex Situ ◽  
Nuclear Reaction Analysis ◽  
Silicon Carbon ◽  
Halogen Free ◽  
Substrate Temperatures ◽  
Sic Films

AbstractSilicon carbide (SiC) films have been successfully deposited on various substrates by oligomer thermal chemical vapor deposition (OTCVD) from a novel, halogen free, oligomer precursor family of polysilyenemethylenes (PSMs) called SP-4000. The high quality films were grown at substrate temperatures in the range of 620°C to 850°C and at process pressures in the range of 1 - 200Torr. SP-4000 is a silicon carbide precursor with formula [-SiH2-CH2-]n, n=2-8, composed of an alternating silicon and carbon backbone with hydrogen side groups. Depositions on Si and graphite substrates yielded SiC films with Si/C ratios in the range 1.1 to 1.2 and thicknesses in the range 0.3 to 50μm.Structural and chemical characterizations were performed by Auger electron spectroscopy (AES), x-ray diffraction (XRD), nuclear reaction analysis (NRA), Fourier transform infrared spectroscopy (FTIR), and scanning electron microscopy (SEM).The SiC coatings deposited at substrate temperatures below 1100°C were found to be amorphous. Ex-situ, post deposition annealing in inert gas ambient above 1100°C converted the SiC films to a polycrystalline phase.

Simultaneous formation of silicon carbide and diamond on Si substrates by microwave plasma assisted chemical vapor deposition

Carbon ◽  
2009 ◽  
Vol 47 (1) ◽  
pp. 352
Author(s):  
Chun-Jiu Tang ◽  
Lian-She Fu ◽  
A.J.S. Fernandes ◽  
M.J. Soares ◽  
Gil Cabral ◽  
...  
Keyword(s):  
Silicon Carbide ◽  
Chemical Vapor Deposition ◽  
Vapor Deposition ◽  
Microwave Plasma ◽  
Chemical Vapor ◽  
Simultaneous Formation ◽  
Si Substrates

Anodic Oxidation of Nitrogen-Added Al-Based Alloys for Thin-Film Transistors

1997 ◽  
Vol 500 ◽  
Author(s):  
Toshiaki Arai ◽  
Hideo Iiyori
Keyword(s):  
Thin Film ◽  
Nitrogen Content ◽  
Electric Fields ◽  
Thin Film Transistors ◽  
Chemical Vapor ◽  
Nitrogen Addition ◽  
Anodized Aluminum ◽  
Leakage Currents ◽  
Current Leakage ◽  
Chemical Vapor Deposited

ABSTRACTNovel anodized films of nitrogen-added aluminum-based alloys were proposed for use in the fabrication of gate insulators for thin-film transistors, and the effect of nitrogen addition on the anodized aluminum-based alloys was investigated. Gadolinium and neodymium were employed as alternative alloy components. The film thickness, the dielectric constant, and the roughness average of the anodized films decreased as the nitrogen content increased, and the nitrogen content was required to be lower than 20 at.%. The most improved values of the breakdown electric fields of anodized aluminum-gadolinium and aluminum-neodymium alloy were 10.1 MV/cm with 6.0 at.% nitrogen content and 9.9 MV/cm with 4.0 at.% nitrogen content, respectively. The leakage currents of the anodized films under a negative bias, which could not be suppressed by high-temperature annealing, were adequately suppressed by nitrogen addition, especially in anodized aluminum-gadolinium alloy. The current leakage of the anodized aluminum-gadolinium alloy with 6.0 at.% nitrogen content became -8E-13 A at -10 V and 150°C. This value is nearly equal to that of chemical-vapor-deposited (CVD) films.

Fabrication of Micro- and Nanoscale SiC Structures Using Selective Deposition Processes

2003 ◽  
Vol 782 ◽  
Author(s):  
L. Chen ◽  
X. A. Fu ◽  
C. A. Zorman ◽  
M. Mehregany
Keyword(s):  
Thin Film ◽  
Growth Process ◽  
Electrochemical Etching ◽  
Nanometer Scale ◽  
Selective Deposition ◽  
Si Substrates ◽  
Deposition Processes ◽  
Sic Films ◽  
Stable Structures

ABSTRACTA method to fabricate nanometer scale SiC beams and nanoporous SiC shells using conventional microlithographic techniques combined with selective APCVD has been developed as an alternative to nanolithographic patterning and electrochemical etching. The process involves the selective deposition of poly-SiC films on patterned SiO2/polysilicon/SiO2 thin film multilayers on (100) Si substrates using a carbonization-based 3C-SiC growth process. This technique capitalizes on significant differences in the nucleation of SiC on SiO2 and polysilicon surfaces in order to form mechanically durable and chemically stable structures.

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