Growth and Characterization of Chalcopyrite Nanocrystals: Beyond Conventional Thin Films

2007 ◽  
Vol 1012 ◽  
Author(s):  
David Fuertes Marrón ◽  
Sebastian Lehmann ◽  
Justyna Kosk ◽  
Sascha Sadewasser ◽  
Martha Ch. Lux-Steiner
Keyword(s):  
Thin Films ◽  
Material Characterization ◽  
Processing Parameters ◽  
Scanning Probe ◽  
Vapor Liquid Solid ◽  
Embedded Structures ◽  
Solid Substrates ◽  
Growth Method ◽  
Chalcogenide Compound

AbstractA dry method for the growth of highly-structured Cu-containing chalcopyrite material on solid substrates, based on the use of metallic precursors, is described. Nanocrystals, sub-micrometer polycrystalline dots, and macroscopic clusters have be grown, either as isolated units or alternatively as embedded structures in a matrix of a binary chalcogenide compound, by adjusting processing parameters. Vapor-liquid-solid (VLS) induced growth has been used for the growth of chalcopyrite nanowires. Examples of material characterization by scanning probe techniques are shown, demonstrating the suitability of the proposed growth method.

Characterization of spray-pyrolized superconducting YBaCuO thin films on single-crystal MgO by transmission electron microscopy

1990 ◽  
Vol 5 (8) ◽  
pp. 1605-1611 ◽  
Author(s):  
S. J. Golden ◽  
H. Isotalo ◽  
M. Lanham ◽  
J. Mayer ◽  
F. F. Lange ◽  
...  
Keyword(s):  
Electron Microscopy ◽  
Thin Films ◽  
Transmission Electron Microscopy ◽  
Film Thickness ◽  
Single Crystal ◽  
Processing Parameters ◽  
Transmission Electron ◽  
Film Substrate ◽  
Mgo Substrate

Superconducting YBaCuO thin films have been fabricated on single-crystal MgO by the spray-pyrolysis of nitrate precursors. The effects on the superconductive behavior of processing parameters such as time and temperature of heat treatment and film thickness were investigated. The superconductive behavior was found to be strongly dependent on film thickness. Films of thickness 1 μm were found to have a Tc of 67 K while thinner films showed appreciably degraded properties. Transmission electron microscopy studies have shown that the heat treatments necessary for the formation of the superconductive phase (for example, 950 °C for 30 min) also cause a substantial degree of film-substrate interdiffusion. Diffusion distances for Cu in the MgO substrate and Mg in the film were found to be sufficient to explain the degradation of the superconductive behavior in films of thickness 0.5 μm and 0.2 μm. From the concentration profiles obtained by EDS analysis diffusion coefficients at 950 °C for Mg into the YBaCuO thin film and for Cu into the MgO substrate were evaluated as 3 × 10−19 m2/s and 1 × 10−17 m2/s, respectively.

Surface characterization of superconductive Nd 1 Ba 2 Cu 3 O y thin films using scanning probe microscopes

1996 ◽  
Author(s):  
Ting Wu ◽  
Massoud Badaye ◽  
R. Itti ◽  
Tadataka Morishita ◽  
N. Koshizuka ◽  
...  
Keyword(s):  
Thin Films ◽  
Surface Characterization ◽  
Scanning Probe

Optical Emission Spectroscopy Study of Magnetron Assisted Ni-Ti DC Sputtering

2006 ◽  
Vol 514-516 ◽  
pp. 1274-1278
Author(s):  
Marcia Silva ◽  
Paulo R. Gordo ◽  
Manuel J.P. Maneira ◽  
Francisco Manuel Braz Fernandes
Keyword(s):  
Thin Films ◽  
Emission Spectroscopy ◽  
Optical Emission Spectroscopy ◽  
Optical Emission ◽  
Processing Parameters ◽  
Operating Conditions ◽  
Argon Pressure ◽  
Spectroscopy Study ◽  
Dc Sputtering

Ni-Ti thin films where the R-phase transformation occurs between 55°C and 30°C, the peak temperature being 40°C, have been produced. These thin films have been grown using a magnetron assisted system of dc sputtering, with a Glow-Discharge Optical Emission Spectroscopy device. The OES technique has been used to investigate the spatial distribution of sputtered atoms from the cathode to the substrate in different operating conditions: Argon pressure of 5 and 9x10 – 4 Torr, without polarization and with – 60 V bias. Structural characterization of the thin films has been made by XRD and the transformation temperatures associated to the shape memory effect have been determined by DSC. A discussion of the optimization of the processing parameters (Argon pressure and polarization) is then presented.

Free space material characterization of carbon nanotube thin films at sub-terahertz frequencies

2016 ◽  
Vol 30 (5) ◽  
pp. 589-598
Author(s):  
Sujitha Puthukodan ◽  
Ehsan Dadrasnia ◽  
Vinod V. K. Thalakkatukalathil ◽  
Horacio Lamela Rivera ◽  
Guillaume Ducournau ◽  
...  
Keyword(s):  
Thin Films ◽  
Carbon Nanotube ◽  
Free Space ◽  
Material Characterization ◽  
Terahertz Frequencies ◽  
Space Material

Characterization of Mocvd Grown Epitaxial Ceramic Oxide Thin Films

1989 ◽  
Vol 168 ◽  
Author(s):  
J. C. Parker ◽  
H. L. M. Chang ◽  
J. J. Xu ◽  
D. J. Lam
Keyword(s):  
Thin Films ◽  
Raman Scattering ◽  
Processing Parameters ◽  
Oxide Thin Films ◽  
Film Composition ◽  
Ceramic Oxide ◽  
Mocvd Technique

AbstractCharacterization of TiO2 films grown by the MOCVD technique was carried out using micro-Raman scattering. The effects of processing parameters on the film composition and morphology were investigated. The micro-Raman technique was shown to be a useful tool for characterizing oxide thin films grown by the MOCVD technique.

Electrochemical Study and Material Characterization of Electroless CoNiWPB Thin Films

2019 ◽  
Vol 25 (41) ◽  
pp. 107-116
Author(s):  
Yosi Y. Shacham-Diamand ◽  
Yelena Sverdlov ◽  
Alla Duchin
Keyword(s):  
Thin Films ◽  
Material Characterization ◽  
Electrochemical Study
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