Effects of MeV Si ion bombardments on the Properties of Nano-layers of SiO2/SiO2+Zn4Sb3

2007 ◽  
Vol 1020 ◽  
Author(s):  
S. Budak ◽  
S. Guner ◽  
C. Muntele ◽  
C. C. Smith ◽  
R. L. Zimmerman ◽  
...  
Keyword(s):  
Thermal Properties ◽  
Buffer Layer ◽  
Periodic Structure ◽  
Rutherford Backscattering Spectrometry ◽  
Ion Bombardment ◽  
Layered Structures ◽  
Rutherford Backscattering ◽  
Before And After

AbstractWe prepared 8 periodic nano-layers of SiO2/SiO2+Zn4Sb3. The deposited multi-layer films have a periodic structure consisting of alternating layers where each layer is between 1-10 nm thick. The purpose of this research is to generate nanolayers of nanostructures of Zn4Sb3 with SiO2 as host and as buffer layer using a combination of co-deposition and MeV ion bombardment taking advantage of the electronics energy deposited in the MeV ion track due to ionization in order to nucleate nanostructures. The electrical and thermal properties of the layered structures were studied before and after bombardment by 5 MeV Si ions at various fluences to form nanostructures in layers of SiO2 containing Zn4Sb3. Rutherford Backscattering Spectrometry (RBS) was used to monitor the stoichiometry before and after MeV bombardments.

Properties of Nano-layers of Nanoclusters of Ag in SiO2 Host produced by MeV Si ion bombardment

2007 ◽  
Vol 1020 ◽  
Author(s):  
C.C. Smith ◽  
S. Budak ◽  
S. Guner ◽  
C. Muntele ◽  
R. A. Minamisawa ◽  
...  
Keyword(s):  
Thermal Properties ◽  
Absorption Band ◽  
Optical Absorption ◽  
Buffer Layer ◽  
Periodic Structure ◽  
Rutherford Backscattering Spectrometry ◽  
Bulk Material ◽  
Ion Bombardment ◽  
Optical Absorption Band ◽  
Before And After

AbstractWe prepared 50 periodic nano-layers of SiO2/AgxSiO2(1-x). The deposited multi-layer films have a periodic structure consisting of alternating layers where each layer is between 1-10 nm thick. The purpose of this research is to generate nanolayers of nanocrystals of Ag with SiO2 as host and as buffer layer using a combination of co-deposition and MeV ion bombardment taking advantage of the electronics energy deposited in the MeV ion track due to ionization in order to nucleate nanoclusters. Our previous work showed that these nanoclusters have crystallinity similar to the bulk material. Nanocrystals of Ag in silica produce an optical absorption band at about 420 nm. Due to the interaction of nanocrystals between sequential nanolayers there is widening of the absorption band. The electrical and thermal properties of the layered structures were studied before and after 5 MeV Si ions bombardment at various fluences to form nanocrystals in layers of SiO2 containing few percent of Ag. Rutherford Backscattering Spectrometry (RBS) was used to monitor the stoichiometry before and after MeV bombardments.

Thermoelectric Properties of SiO2/SiO2+Ag Nanolayered Multilayer Films Effected by MeV Si Ions

2010 ◽  
Vol 1267 ◽  
Author(s):  
S. Budak ◽  
Cydale Smith ◽  
John Chacha ◽  
Marcus Pugh ◽  
Hervie Martin ◽  
...  
Keyword(s):  
Optical Properties ◽  
Thermal Properties ◽  
Buffer Layer ◽  
Periodic Structure ◽  
Thermoelectric Properties ◽  
Thermoelectric Materials ◽  
Figure Of Merit ◽  
Multilayer Films ◽  
Metal Contacts ◽  
Before And After

AbstractWe have prepared 100 periodic nano-layers of SiO2/AgSiO2 with Au layer deposited on both sides as metal contacts. The deposited multi-layer films have a periodic structure consisting of alternating layers where each layer is 3.3 nm thick. The purpose of this research is to tailor the figure of merit of the thermoelectric materials generated from the nanolayers of nanocrystals of Ag with SiO2 as host and as buffer layer using a combination of co-deposition and MeV ions bombardment taking advantage of energy deposited in the MeV ion track to nucleate nanoclusters. The electrical and thermal properties of the nanolayered structures were studied before and after 5 MeV Si ions bombardment at various fluences to form nanocrystals. In addition to thermoelectric properties, some optical properties of the SiO2/SiO2+Ag multi-layer superlattice films have been studied.

Study of Elemental Depth Distribution in the Multilayer Material \(\text{TiO}_2\)/\(\text{SiO}_2\)/Si by Rutherford Backscattering Spectrometry (RBS)

2019 ◽  
Vol 29 (3SI) ◽  
pp. 393
Author(s):  
T. V. Phuc ◽  
M. Kulik ◽  
A. P. Kobzev ◽  
L. H. Khiem
Keyword(s):  
Rutherford Backscattering Spectrometry ◽  
Ion Irradiation ◽  
Ion Beam ◽  
Rutherford Backscattering ◽  
Multilayer Structures ◽  
Multilayer Material ◽  
Transition Layers ◽  
Before And After ◽  
Elemental Depth ◽  
Irradiation Process

In this study we investigated depth distributions of elements in the multilayer structures of TiO\(_2\)/SiO\(_2\)/Si before and after ion irradiation. The samples were implanted with Ne\(^+\), Ar\(^+\), Kr\(^+\) and Xe\(^+\) ions. For each implantation the multilayer structures were irradiated by the ions with the energy 100, 150, 200 and 250 keV. The elemental concentrations in the samples were analyzed by the Rutherford Backscattering Spectrometry (RBS) method. It was found that the transition layers existed between the TiO\(_2\) and SiO\(_2\) layers. Formation of these layers derived from the ion beam mixing that was occurred at TiO\(_2\)/SiO\(_2\) interface after irradiation process. The depth profiles show that thickness of the transition layers increased with the growing energy and atomic mass of the implanted ions.

MeV Si Ions Bombardment Effects on SiO2/SiO2-ZrNiSn Nano-layered Thermoelectric Generator

2008 ◽  
Vol 1102 ◽  
Author(s):  
S. Budak ◽  
S. Guner ◽  
C. Muntele ◽  
D. ILA
Keyword(s):  
Thermal Conductivity ◽  
Electrical Conductivity ◽  
Thermal Properties ◽  
Seebeck Coefficient ◽  
Figure Of Merit ◽  
Thermoelectric Generator ◽  
Rutherford Backscattering Spectrometry ◽  
Absolute Temperature ◽  
Dimensionless Figure Of Merit ◽  
Before And After

AbstractWe have deposited 50 nano-layers of 710 nm of SiO2/SiO2+ZrNiSn with a periodic structure consisting of alternating layers where each layer is about 14 nm thick. The purpose of this research is to generate nanolayers of nanostructures of ZrNiSn with SiO2 as host and as buffer layer using a combination of co-deposition and MeV ion bombardment taking advantage of the energy deposited in the MeV ions track to nucleate nanostructures. The performance of the thermoelectric materials and devices is shown by a dimensionless figure of merit, ZT = S2σT/ĸ, where S is the Seebeck coefficient, σ is the electrical conductivity, T is the absolute temperature and ĸ is the thermal conductivity. ZT can be increased by increasing S, increasing σ, or decreasing ĸ. The electrical and thermal properties of the layered structures were studied before and after bombardment by 5 MeV Si ions at seven different fluences ranging from 1014 to 1015 ions/cm2 in order to form nanostructures in layers of SiO2 containing few percent of ZrNiSn. Rutherford Backscattering Spectrometry (RBS) was used to monitor elemental analysis of the film.

Stoichiometric Determination of Graphite Intercalation Compounds Using Rutherford Backscatiering Spectrometry

1983 ◽  
Vol 27 ◽  
Author(s):  
L. Salamanca-Riba ◽  
B.S. Elman ◽  
M.S. Dresselhaus ◽  
T. Venkatesan
Keyword(s):  
Experimental Error ◽  
Rutherford Backscattering Spectrometry ◽  
Rutherford Backscattering ◽  
Intercalation Compounds ◽  
Graphite Intercalation Compounds ◽  
X Ray ◽  
Donor And Acceptor ◽  
Graphite Intercalation ◽  
Non Destructive

ABSTRACTRutherford backscattering spectrometry (RBS) is used to characterize the stoichiometry of graphite intercalation compounds (GIC). Specific application is made to several stages of different donor and acceptor compounds and to commensurate and incommensurate intercalants. A deviation from the theoretical stoichiometry is measured for most of the compounds using this non-destructive method. Within experimental error, the RBS results agree with those obtained from analysis of the (00ℓ) x-ray diffractograms and weight uptake measurements on the same samples.

scholarly journals Rutherford backscattering spectrometry analysis of InGaAs nanostructures

2019 ◽  
Vol 37 (2) ◽  
pp. 020601 ◽  
Author(s):  
Grazia Laricchiuta ◽  
Wilfried Vandervorst ◽  
Ian Vickridge ◽  
Matej Mayer ◽  
Johan Meersschaut
Keyword(s):  
Rutherford Backscattering Spectrometry ◽  
Rutherford Backscattering ◽  
Spectrometry Analysis

Dopant concentration profiles in conducting poly(p-phenylenevinylene) by Rutherford backscattering spectrometry

1990 ◽  
Vol 23 (15) ◽  
pp. 3675-3682 ◽  
Author(s):  
Michael A. Masse ◽  
Russell J. Composto ◽  
Richard A. L. Jones ◽  
Frank E. Karasz
Keyword(s):  
Dopant Concentration ◽  
Rutherford Backscattering Spectrometry ◽  
Rutherford Backscattering ◽  
Concentration Profiles
Sign in / Sign up

Export Citation Format

Share Document