Effect of Strain on the Tunability of Highly (100) Oriented Mn-doped Barium Strontium Stannate Titanate Thin Films

AbstractHighly (100)-oriented Mn-doped barium strontium stannate titanate thin films of a nominal composition (Ba0.7Sr0.3)(Sn0.2Ti0.8-xMnx)O3(Mn-BSSnT) (x=0%, 0.2%, 0.4%, 0.6% and 1%), were fabricated by pulsed laser deposition on (La0.7Sr0.3)O3/LaAlO3substrates. Both elastic strain and inhomogeneous strain were measured by x-ray diffraction techniques. Relationship between the strain and the dielectric properties of the Mn-BSSnT thin films were systematically investigated as a function of the Mn content. Our results show that the tunability is dependent upon not only the elastic strain induced by thermal expansion coefficient and lattice mismatch between the thin film and the substrate but also inhomogeneous strain induced by Mn doping. The tunability decreases with increasing inhomogeneous strain and can be easily manipulated by changing Mn doping content, which is beneficial to real tunable device applications.

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Unusual strain dependence of tunability in highly (100)-oriented Mn-doped barium strontium stannate titanate thin films

Applied Physics Letters ◽

10.1063/1.2945290 ◽

2008 ◽

Vol 92 (23) ◽

pp. 232907 ◽

Cited By ~ 9

Author(s):

Shengbo Lu ◽

Zhengkui Xu

Keyword(s):

Thin Films ◽

Strain Dependence ◽

Barium Strontium ◽

Strontium Stannate ◽

Unusual Strain ◽

Mn Doped

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Band gap tuning and p to n-type transition in Mn-doped CuO nanostructured thin films

Journal of Semiconductors ◽

10.1088/1674-4926/43/1/012801 ◽

2022 ◽

Vol 43 (1) ◽

pp. 012801

Author(s):

R. Rahaman ◽

M. Sharmin ◽

J. Podder

Keyword(s):

Thin Films ◽

Band Gap ◽

Spray Pyrolysis Technique ◽

Band Gap Energy ◽

Dielectric Constants ◽

X Rays ◽

Electron Effective Mass ◽

Mn Doping ◽

Type Transition ◽

Mn Doped

Abstract Here we discuss the synthesis of copper (II) oxide (CuO) and manganese (Mn)-doped CuO thin films varying with 0 to 8 at% Mn using the spray pyrolysis technique. As-deposited film surfaces comprised of agglomerated spherical nanoparticles and a semi-spongy porous structure for 4 at% Mn doping. Energy dispersive analysis of X-rays confirmed the chemical composition of the films. X-ray diffraction spectra showed a polycrystalline monoclinic structure with the predominance of the ( 11) peak. Optical band gap energy for direct and indirect transitions was estimated in the ranges from 2.67–2.90 eV and 0.11–1.73 eV, respectively. Refractive index and static dielectric constants were computed from the optical spectra. Electrical resistivity of CuO and Mn-doped CuO (Mn:CuO) thin films was found in the range from 10.5 to 28.6 Ω·cm. The tiniest electron effective mass was calculated for 4 at% Mn:CuO thin films. P to n-type transition was observed for 4 at% Mn doping in CuO films. Carrier concentration and mobility were found in the orders of 1017 cm–3 and 10–1 cm2/(V·s), respectively. The Hall coefficient was found to be between 9.9 and 29.8 cm3/C. The above results suggest the suitability of Mn:CuO thin films in optoelectronic applications.

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Microstructure and electrical properties of Mn-doped barium strontium titanate thin films prepared on copper foils

Applied Surface Science ◽

10.1016/j.apsusc.2010.04.042 ◽

2010 ◽

Vol 256 (22) ◽

pp. 6531-6535 ◽

Cited By ~ 31

Author(s):

Yanhua Fan ◽

Shuhui Yu ◽

Rong Sun ◽

Lei Li ◽

Yansheng Yin ◽

...

Keyword(s):

Thin Films ◽

Electrical Properties ◽

Strontium Titanate ◽

Barium Strontium Titanate ◽

Copper Foils ◽

Barium Strontium ◽

Mn Doped

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Ferro-electric and magnetic properties in Bi5Ti3FeO15 films by Mn-doping

Journal of Materials Chemistry C ◽

10.1039/d1tc04383h ◽

2021 ◽

Author(s):

Xue Zhang ◽

Ruijuan Qi ◽

Shangwei Dong ◽

Shuai Yang ◽

Xuekun Hong ◽

...

Keyword(s):

Thin Films ◽

Magnetic Properties ◽

Cell Volume ◽

Unit Cell Volume ◽

Unit Cell ◽

Mn Doping ◽

Electrical And Magnetic Properties ◽

Mn Doped

We investigate the structure and optical, electrical and magnetic properties in Mn-doped Bi5Ti3FeO15 (BTFO) thin films. While Mn-doping does not almost change the structure and unit cell volume of BTFO,...

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Enhanced Electrical properties in Mn-doped Bi3.25La0.75Ti3O12 thin films

MRS Proceedings ◽

10.1557/proc-0902-t03-52 ◽

2005 ◽

Vol 902 ◽

Author(s):

Sushil Kumar Singh ◽

Hiroshi Ishiwara

Keyword(s):

Thin Film ◽

Thin Films ◽

Electrical Properties ◽

Coercive Field ◽

Remanent Polarization ◽

Ferroelectric Properties ◽

Sol Gel ◽

Switching Field ◽

Mn Doping ◽

Mn Doped

AbstractMn-doped Bi3.25La0.75Ti3O12 (BLT) thin films were fabricated by depositing sol-gel solutions on Pt/Ti/SiO2/Si <100> substrates. The surface morphology and ferroelectric properties of Mn-doped BLT films depend upon the orientation of the films. Small amount of Mn-doping in BLT films influences the ferroelectric properties of the films, that is, it enhances the remanent polarization and reduces the coercive field. The 1% Mn-doped BLT films show enhanced remanent polarization and reduced the coercive field by about 22%. To the contrary, Mn-doping more than 1% decreases polarization gradually. Mn-doping significantly improves the fatigue resistance of BLT films. The reduced polarization in the 3.3% Mn-doped thin film recovers during switching cycles higher than 5 × 105. Under high switching field, the probability of field-assisted unpinning of domains is expected to be high and this may be the main cause for increase in polarization after 5 × 105 in the 3.3% Mn-doped BLT film.

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Elastic-strain tensor and inhomogeneous strain in thin films by X-ray diffraction

Thin Solid Films ◽

10.1016/j.tsf.2003.10.043 ◽

2004 ◽

Vol 450 (1) ◽

pp. 29-33 ◽

Cited By ~ 4

Author(s):

D. Balzar ◽

N.C. Popa

Keyword(s):

Thin Films ◽

Elastic Strain ◽

Strain Tensor ◽

X Ray Diffraction ◽

X Ray ◽

Inhomogeneous Strain ◽

Elastic Strain Tensor

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Effect of doping concentration on the structural, morphological, optical and electrical properties of Mn-doped CdO thin films

Materials Science-Poland ◽

10.1515/msp-2015-0115 ◽

2015 ◽

Vol 33 (4) ◽

pp. 774-781 ◽

Cited By ~ 30

Author(s):

N. Manjula ◽

M. Pugalenthi ◽

V.S. Nagarethinam ◽

K. Usharani ◽

A.R. Balu

Keyword(s):

Thin Films ◽

Electrical Properties ◽

Doping Concentration ◽

Cadmium Oxide ◽

Optical And Electrical Properties ◽

Cubic Crystal ◽

Mn Doping ◽

Glass Substrates ◽

Cdo Thin Films ◽

Mn Doped

AbstractThin films of manganese-doped cadmium oxide (CdO:Mn) with different Mn-doping levels (0, 1, 2, 3 and 4 at.%) were deposited on glass substrates by employing an inexpensive, simplified spray technique using a perfume atomizer at 375 °C. The influence of Mn incorporation on the structural, morphological, optical and electrical properties of CdO films has been studied. All the films exhibit cubic crystal structure with a (1 1 1) preferential orientation. Mn-doping causes a slight shift of the (1 1 1) diffraction peak towards higher angle. The crystallite size of the films is found to decrease from 34.63 nm to 17.68 nm with an increase in Mn doping concentration. The CdO:Mn film coated with 1 at.% Mn exhibit a high transparency of nearly 90 % which decreases for higher doping concentration. The optical band gap decreases with an increase in Mn doping concentration. All the films have electrical resistivity of the order of 10−4 Ω·cm.

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Investigations on Sol-Gel Derived Ba0.5Sr0.5Ti1-δMnδO3 (δ = 0.0 to 5.0 at%) Thin Films for Phase Shifter Applications

MRS Proceedings ◽

10.1557/proc-720-h2.1 ◽

2002 ◽

Vol 720 ◽

Cited By ~ 2

Author(s):

R.S. Katiyar ◽

M. Jain ◽

S.B. Majumder ◽

R.R. Romanofsky ◽

F.W. van Keuls ◽

...

Keyword(s):

Thin Films ◽

Phase Transition ◽

Phase Shift ◽

Surface Morphology ◽

Phase Shifter ◽

Sol Gel ◽

Bias Field ◽

Mn Doping ◽

First Order Phase Transition ◽

Mn Doped

AbstractHighly (100) oriented Ba0.5Sr0.5Ti1-δMnδO3 thin films were deposited on (100) LaAlO3 (LAO) substrate by sol-gel technique. We have studied systematically the effect of Mn doping on the degree of texturing, surface morphology, dielectric properties and phase transition behavior of barium strontium titanate (BST) thin films. Up to 3 at % Mn doping the degree of (100) texturing and grain size of BST (50/50) thin films were markedly improved, which led to an increased tunability from 29% (undoped) to 39% (3 at % Mn doped); measured at 1 MHz and 2.34V/mm bias field. The transition and Curie-Weiss temperatures of BST (50/50) thin films were found to be about 266 K and 185 K respectively, which confirmed the first order phase transition in the films. The variation of transition temperatures as a function of Mn doping contents in BST (50/50) thin films were influenced by the variation of stress state and surface morphology modifications induced by Mn doping. The bias field dependence of the dielectric constant and loss tangents of undoped and Mn doped films were analyzed in terms of a model based on Devonshire theory. Phase shift measurements showed that the degree of phase shift increases from 239° to 337° with 0 to 3 at% Mn doping. The insertion loss also increases from 5.4 dB (undoped) to 9.9 dB (3 at % Mn doped) with doping content so that there is no effective improvement in the k factor, which remains in the range of 33 - 44°/dB. Modification in surface morphology and film stoichiometry induced by Mn doping is thought to play significant role in observed phase shifter characteristics.

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Bandgap tuning in ZnO thin films and enhanced n-type properties through Mn doping synthesized by a simple spray pyrolysis

International Journal of Modern Physics B ◽

10.1142/s0217979221501551 ◽

2021 ◽

pp. 2150155

Author(s):

Md. Khorshed Alam ◽

Mehnaz Sharmin ◽

Jiban Podder

Keyword(s):

Thin Films ◽

Spray Pyrolysis ◽

Room Temperature ◽

Visible Region ◽

Zno Thin Films ◽

Bandgap Energy ◽

Chemical Compositions ◽

Mn Doping ◽

X Ray ◽

Mn Doped

Undoped and manganese (Mn)-doped zinc oxide (ZnO) thin films have been deposited onto glass substrates at 300[Formula: see text]C using a low cost spray pyrolysis technique. Structural, optical and electrical properties of the as-deposited films have been investigated. Scanning electron microscopy images show the existence of clusters with well-defined nucleation centers consisting of highly dense ganglia-like fibers over a large area around the nucleation center. Chemical compositions of the ZnO and Mn-doped ZnO thin films are studied by using energy dispersive X-ray (EDX) analysis. X-ray diffraction spectra depict that the films have polycrystalline wurtzite structure. The average crystallite sizes are calculated in the range of 8–16 nm by Williamson–Hall method and found in good agreement with Scherer method. Optical transmittance of the films is about 80% in the visible region. Bandgap energy is tuned to 2.83 eV from 3.10 eV with increasing Mn doping. Electrical resistivity at room-temperature decreases significantly with increasing Mn doping as well as increasing temperature from 300–440 K. The activation energies in the temperature ranges 300–350 K and 350–440 K are found to be in the range of 0.25–0.16 eV and 0.35–0.59 eV, respectively. Hall Effect measurements show that the thin films have negative Hall co-efficient indicating [Formula: see text]-type conductivity at room-temperature. Carrier concentration is found to be of the order of 10[Formula: see text] cm[Formula: see text].

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