Influence of Structural and Electrical Characteristics of Extended Defects on GaAs Field Effect Transistors

1987 ◽  
Vol 104 ◽  
Author(s):  
M. Van Hove ◽  
W. De Raedt ◽  
M. De Potter ◽  
M. Van Rossum ◽  
J. L. Weyher
Keyword(s):  
Systematic Study ◽  
Field Effect ◽  
Field Effect Transistors ◽  
Extended Defects ◽  
Electrical Characteristics ◽  
Systematic Mapping ◽  
Gaas Substrates ◽  
Lec Gaas ◽  
Induced Defects ◽  
Processing Steps

ABSTRACTThe paper presents a systematic study of grown-in and process-induced defects on LEC GaAs substrates. Defects have been revealed by photoetching the wafers with diluted Sirti-like solutions after various processing steps. MESFET arrays have been processed on the wafers and a systematic mapping of the I-V characteristics has been performed. A correlation between various defect configurations and the FET threshold voltage shifts has been established.

Low Temperature Device Processing Technology for II-VI Semiconductors

1989 ◽  
Vol 161 ◽  
Author(s):  
D.L. Dreifus ◽  
R.M. Kolbas ◽  
B.P. Sneed ◽  
J.F. Schetzina
Keyword(s):  
Low Temperature ◽  
Field Effect ◽  
Field Effect Transistors ◽  
Epitaxial Layers ◽  
Processing Technologies ◽  
Device Processing ◽  
Device Structures ◽  
Lift Off ◽  
Processing Steps

ABSTRACTLow temperature (<60° C) processing technologies that avoid potentially damaging processing steps have been developed for devices fabricated from II-VI semiconductor epitaxial layers grown by photoassisted molecular beam epitaxy (MBE). These low temperature technologies include: 1) photolithography (1 µm geometries), 2) calibrated etchants (rates as low as 30 Å/s), 3) a metallization lift-off process employing a photoresist profiler, 4) an interlevel metal dielectric, and 5) an insulator technology for metal-insulator-semiconductor (MIS) structures. A number of first demonstration devices including field-effect transistors and p-n junctions have been fabricated from II-VI epitaxial layers grown by photoassisted MBE and processed using the technology described here. In this paper, two advanced device structures, processed at <60° C, will be presented: 1) CdTe:As-CdTe:In p-n junction detectors, grown in situ by photoassisted MBE, and 2) HgCdTe-HgTe-CdZnTe quantum-well modulation-doped field-effect transistors (MODFETs).

Photoswitchable organic field-effect transistors and memory elements comprising an interfacial photochromic layer

2015 ◽  
Vol 51 (28) ◽  
pp. 6130-6132 ◽  
Author(s):  
Lyubov A. Frolova ◽  
Pavel A. Troshin ◽  
Diana K. Susarova ◽  
Alexander V. Kulikov ◽  
Nataliya A. Sanina ◽  
...  
Keyword(s):  
Field Effect ◽  
Field Effect Transistors ◽  
Memory Devices ◽  
Electrical Characteristics ◽  
Organic Field Effect Transistors

Memory devices with superior electrical characteristics were designed using an interfacial spirooxazine layer introduced between dielectric and semiconductor layers in OFETs.

Effect of ozone exposure on the electrical characteristics of high-purity, large-diameter semiconducting carbon nanotubes

2014 ◽  
Vol 16 (22) ◽  
pp. 10861-10865 ◽  
Author(s):  
Jia Gao ◽  
Yueh-Lin Loo
Keyword(s):  
Carbon Nanotubes ◽  
High Purity ◽  
Field Effect ◽  
Field Effect Transistors ◽  
Large Diameter ◽  
Ozone Exposure ◽  
Electrical Characteristics

Presorted, semiconducting carbon nanotubes in the channels of field-effect transistors undergo simultaneous p-doping and oxidation during ozone exposure.

Steep Switching Characteristics of Partially Gated p+–n+–i–n+ Silicon-Nanowire Transistors

2021 ◽  
Vol 21 (8) ◽  
pp. 4330-4335
Author(s):  
Jaemin Son ◽  
Doohyeok Lim ◽  
Sangsig Kim
Keyword(s):  
Field Effect ◽  
Impact Ionization ◽  
Field Effect Transistors ◽  
Silicon Nanowire ◽  
Operation Mode ◽  
Feedback Loops ◽  
Charge Carriers ◽  
Electrical Characteristics ◽  
Nanowire Transistors ◽  
Switching Characteristics

In this study, we examine the electrical characteristics of p+–n+–i–n+ silicon-nanowire field-effect transistors with partially gated channels. The silicon-nanowire field-effect transistors operate with barrier height modulation through positive feedback loops of charge carriers triggered by impact ionization. Our field-effect transistors exhibit outstanding switching characteristics, with an on current of ˜10−4 A, an on/off current ratio of ˜106, and a point subthreshold swing of ˜23 mV/dec. Moreover, the devices inhibit ambipolar characteristics because of the use of the partially gated structure and feature the p-channel operation mode.

Simulation of electrical characteristics in negative capacitance surrounding-gate ferroelectric field-effect transistors

2012 ◽  
Vol 101 (25) ◽  
pp. 253511 ◽  
Author(s):  
Y. G. Xiao ◽  
Z. J. Chen ◽  
M. H. Tang ◽  
Z. H. Tang ◽  
S. A. Yan ◽  
...  
Keyword(s):  
Field Effect ◽  
Field Effect Transistors ◽  
Negative Capacitance ◽  
Electrical Characteristics ◽  
Surrounding Gate
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