Thermoelectric Properties of the Nanostructured NaPb18-xSnxMTe20 (M=Sb, Bi) Materials

2007 ◽  
Vol 1044 ◽  
Author(s):  
Aurelie Gueguen ◽  
Pierre Ferdinand Poudeu Poudeu ◽  
Robert Pcionek ◽  
Huijun Kong ◽  
Ctirad Uher ◽  
...  
Keyword(s):  
Thermal Conductivity ◽  
Electrical Conductivity ◽  
Thermoelectric Properties ◽  
Room Temperature ◽  
Lattice Thermal Conductivity ◽  
Measured Temperature ◽  
Measured Temperature Range ◽  
Temperature Range ◽  
Properties Of Materials ◽  
P Type

AbstractThe thermoelectric properties of materials with compositions NaPb18-xSnxMTe20 (M=Sb, Bi, x=0, 3, 5, 9, 13, 16 and 18) were investigated in the temperature range 300-670K. All compositions exhibited p-type behavior over the measured temperature range. Electronic properties and transport were tuned through the manipulation of the Pb/Sn ratio. Increasing the Sn fraction results in an increase in electrical conductivity and a decrease in thermopower. The compositions NaPb13Sn5SbTe20 and NaPb9Sn9SbTe20 show a lattice thermal conductivity of ∼1 W/m/K at room temperature.

Thermoelectric Properties of Doped Iron Disilicide

2000 ◽  
Vol 626 ◽  
Author(s):  
Jun-ichi Tani ◽  
Hiroyasu Kido
Keyword(s):  
Thermal Conductivity ◽  
Electrical Resistivity ◽  
Seebeck Coefficient ◽  
Thermoelectric Properties ◽  
Measured Temperature ◽  
Iron Disilicide ◽  
Measured Temperature Range ◽  
Temperature Range

ABSTRACTIn order to investigate the thermoelectric properties of Re-doped β-FeSi2 (Fe1-xRexSi2), Ir-doped β-FeSi2 (Fe1-xIrxSi2), and Pt-doped β-FeSi2 (Fe1-xPtxSi2), the electrical resistivity, the Seebeck coefficient, and the thermal conductivity of these samples have been measured in the temperature range between 300 and 1150 K. Fe1-xRexSi2 is p-type, while Fe1-xIrxSi2 and Fe1-xPt xSi2 are n-type over the measured temperature range. The solubility limits of dopant are estimated to be 0.2at% for Fe1-xRexSi2, 0.5at% for Fe1-xIrxSi2, and 1.9at% for Fe1-xPtxSi2. A maximum ZT value of 0.14 was obtained for Fe1-xPt xSi2 (x=0.03) at the temperature 847 K.

Thermoelectric Properties of Bi2Te3-ySey Bulk Materials Synthesized by Melting-Grinding Process

2018 ◽  
Vol 773 ◽  
pp. 145-151
Author(s):  
Min Soo Park ◽  
Gook Hyun Ha ◽  
Hye Young Koo ◽  
Yong Ho Park
Keyword(s):  
Thermal Conductivity ◽  
Thermoelectric Properties ◽  
Figure Of Merit ◽  
Room Temperature ◽  
Thermal Characteristics ◽  
Grinding Process ◽  
Alloy Scattering ◽  
Temperature Range ◽  
P Type ◽  
Optimal Effect

The Bi–Te thermoelectric system shows an excellent figure of merit (ZT) near room temperature. Research on increasing the ZT value for n‑type Bi–Te is imperative because the thermoelectric properties of this compound are inferior to those of the p-type material. For this purpose, n-type Bi2Te3-ySey powders with various amounts of Se dopant (0.3 ≤ y ≤ 0.6) were synthesized by a vacuum melting-grinding process to improve the physical properties. The ZT value of the sintered bodies was investigated in the temperature range of 298–423 K with regard to the electrical and thermal characteristics. As the Se content increased, the electrical conductivity decreased owing to a reduction in the carrier concentration, which improved the overall value of ZT. The thermal conductivity clearly decreased as the Se content increased in the temperature range of 298–373 K due to increased alloy scattering, as well as a reduction in the lattice thermal conductivity caused by crystal grain boundary scattering. At room temperature, Bi2Te2.7Se0.3 (y = 0.3) exhibited the highest ZT of 0.85. At increased temperatures, the ZT value was highest for Bi2Te2.55Se0.45 (y = 0.45), indicating that the optimal effect of the Se dopants varies depending on the temperature range.

THERMOELECTRIC PROPERTIES OF p-TYPE SKUTTERUDITES (Pr0.25Nd0.75)xFe3CoSb12 BY LEVITATION MELTING AND SPARK PLASMA SINTERING

2013 ◽  
Vol 06 (05) ◽  
pp. 1340006 ◽  
Author(s):  
JINGSHU XU ◽  
CHENGUANG FU ◽  
JIAN XIE ◽  
XINBING ZHAO ◽  
TIEJUN ZHU
Keyword(s):  
Thermal Conductivity ◽  
Electrical Conductivity ◽  
Seebeck Coefficient ◽  
Spark Plasma Sintering ◽  
Thermoelectric Properties ◽  
Lattice Thermal Conductivity ◽  
Levitation Melting ◽  
Plasma Sintering ◽  
Spark Plasma ◽  
P Type

The p-type skutterudite compounds of ( Pr 0.25 Nd 0.75)x Fe 3 CoSb 12 (x = 0.67–0.78) have been successfully synthesized by levitation melting followed by annealing and spark plasma sintering. The thermoelectric properties have been characterized by the measurements of Seebeck coefficient, electrical conductivity and thermal conductivity in the temperature range from 300 K to 850 K. The improvement in the thermoelectric properties was realized due to the reduction in the lattice thermal conductivity when the voids were partially filled by Pr 0.25 Nd 0.75. The maximum ZT value of ~ 0.83 for ( Pr 0.25 Nd 0.75)0.76 Fe 3 CoSb 12 was obtained at 700 K.

scholarly journals Theoretical Study on Thermoelectric Properties and Doping Regulation of Mg3X2 (X = As, Sb, Bi)

Metals ◽  
2021 ◽  
Vol 11 (6) ◽  
pp. 971
Author(s):  
Xiaofang Wang ◽  
Yong Lu ◽  
Ziyu Hu ◽  
Xiaohong Shao
Keyword(s):  
Thermal Conductivity ◽  
Thermoelectric Properties ◽  
Room Temperature ◽  
Lattice Thermal Conductivity ◽  
Theoretical Study ◽  
Phonon Dispersion ◽  
First Principle ◽  
Combined Method ◽  
Figures Of Merit ◽  
P Type

For searching both high-performances and better fits for near-room temperature thermoelectric materials, we here carried out a theoretical study on thermoelectric properties and doping regulation of Mg3X2 (X = As, Sb, Bi) by the combined method of first principle calculations and semi-classical Boltzmann theory. The thermoelectric properties of n-type Mg3As2, Mg3Sb2, and Mg3Bi2 were studied, and it was found that the dimensionless figures of merit, zT, are 2.58, 1.38, 0.34, and the p-type ones are 1.39, 0.64, 0.32, respectively. Furthermore, we calculated the lattice thermal conductivity of doped structures and screened out the structures with a relatively low formation energy to study the phonon dispersion and thermal conductivity in Mg3X2 (X = As, Sb, Bi). Finally, high thermoelectric zT and ultralow thermal conductivity of these doped structures was discussed.

scholarly journals Effect of band structure adjustment based of Cu site on the thermoelectric properties of BiCuSeO

2021 ◽  
Author(s):  
Bo Feng
Keyword(s):  
Thermal Conductivity ◽  
Electrical Conductivity ◽  
Seebeck Coefficient ◽  
Effective Mass ◽  
Valence Band ◽  
Thermoelectric Properties ◽  
Density Of States ◽  
First Principles Calculation ◽  
Temperature Range ◽  
Ti Doping

Abstract The effect of Ti doped at Cu site on the thermoelectric properties of BiCuSeO was studied by experimental method and first principles calculation. The results show that Ti doping can cause the lattice contraction and decrease the lattice constant. Ti doping can increase the band gap and lengthen the Cu/Ti-Se bond, resulting in the decrease of carrier concentration. Ti doping can reduce the effective mass and the Bi-Se bond length, correspondingly improve the carrier mobility. Ti doping can decrease the density of states of Cu-3d and Se-4p orbitals at the top of valence band, but Ti-4p orbitals can obviously increase the density of states at the top of valence band and finally increase the electrical conductivity in the whole temperature range. With the decrease of effective mass, Ti doping would reduce the Seebeck coefficient, but the gain effect caused by the increase of electrical conductivity is more than the benefit reduction effect caused by the decrease of Seebeck coefficient, and the power factor shows an upward trend. Ti doping can reduce Young's modulus, lead to the increase of defect scattering and strain field, correspondingly reduce the lattice thermal conductivity and total thermal conductivity. It is greatly increased for the ZT values in the middle and high temperature range, with the highest value of 1.04 at 873 K.

Thermoelectric Properties of n-type (Bi2Se3)x(Bi2Te3)1-x Crystals Prepared by Zone Melting

2008 ◽  
Vol 368-372 ◽  
pp. 547-549
Author(s):  
Jun Jiang ◽  
Ya Li Li ◽  
Gao Jie Xu ◽  
Ping Cui ◽  
Li Dong Chen
Keyword(s):  
Thermal Conductivity ◽  
Electrical Conductivity ◽  
Seebeck Coefficient ◽  
Carrier Concentration ◽  
Thermoelectric Properties ◽  
Figure Of Merit ◽  
Zone Melting ◽  
Chemical Compositions ◽  
Melting Method ◽  
Temperature Range

In the present study, n-type (Bi2Se3)x(Bi2Te3)1-x crystals with various chemical compositions were fabricated by the zone melting method. Thermoelectric properties, including Seebeck coefficient (α), electrical conductivity (σ) and thermal conductivity (κ), were measured in the temperature range of 300-500 K. The influence of the variations of Bi2Te3 and Bi2Se3 content on thermoelectric properties was studied. The increase of Bi2Se3 content (x) caused an increase in carrier concentration and thus an increase of σ and a decrease of α. The maximum figure of merit (ZT = α2σT/κ) of 0.87 was obtained at about 325 K for the composition of 93%Bi2Te3-7%Bi2Se3 with doping TeI4.

High-temperature thermoelectric properties of n-type BayNixCo4−xSb12

2001 ◽  
Vol 16 (12) ◽  
pp. 3343-3346 ◽  
Author(s):  
X. F. Tang ◽  
L. M. Zhang ◽  
R. Z. Yuan ◽  
L. D. Chen ◽  
T. Goto ◽  
...  
Keyword(s):  
Thermal Conductivity ◽  
Electrical Conductivity ◽  
High Temperature ◽  
Seebeck Coefficient ◽  
Thermoelectric Properties ◽  
Electron Concentration ◽  
Lattice Thermal Conductivity ◽  
Filling Fraction ◽  
Ni Content ◽  
Increasing Temperature

Effects of Ba filling fraction and Ni content on the thermoelectric properties of n-type BayNixCo4−xSb12 (x = 0−0.1, y = 0−0.4) were investigated at temperature range of 300 to 900 K. Thermal conductivity decreased with increasing Ba filling fraction and temperature. When y was fixed at 0.3, thermal conductivity decreased with increasing Ni content and reached a minimum value at about x = 0.05. Lattice thermal conductivity decreased with increasing Ni content, monotonously (y ≤ 0.1). Electron concentration and electrical conductivity increased with increasing Ba filling fraction and Ni content. Seebeck coefficient increased with increasing temperature and decreased with increasing Ba filling fraction and Ni content. The maximum ZT value of 1.25 was obtained at about 900 K for n-type Ba0.3Ni0.05Co3.95Sb12.

The Influence of RuO2 Addition on the Thermoelectric Properties of BiSbTe Alloys

2012 ◽  
Vol 512-515 ◽  
pp. 1651-1654 ◽  
Author(s):  
Yu Kun Xiao ◽  
Zhi Xiang Li ◽  
Jun Jiang ◽  
Sheng Hui Yang ◽  
Ting Zhang ◽  
...  
Keyword(s):  
Thermal Conductivity ◽  
Thermoelectric Properties ◽  
Lattice Thermal Conductivity ◽  
Combined Process ◽  
Plasma Sintering ◽  
The Matrix ◽  
Spark Plasma ◽  
Xrd Patterns ◽  
Factor Α ◽  
P Type

P-type BiSbTe/RuO2 composite was fabricated using a combined process of melting and spark plasma sintering. The XRD patterns showed that RuO2 reacted with the matrix for the RuO2 content of 1.0 wt% and 4.0 wt% samples. The measured thermoelectric properties showed that the highest electrical conductivity was obtained for the sample with 2.0 wt% RuO2. The power factor (α2σ/κ) decreased with the increase of RuO2 below 450 K. The lattice thermal conductivity was lower than that of BiSbTe over the whole temperature range for BiSbTe/2.0 wt% RuO2.

Thermoelectric Properties of CoSb3-based Skutterudite Compounds

2010 ◽  
Vol 1267 ◽  
Author(s):  
Adul Harnwunggmoung ◽  
Ken Kurosaki ◽  
Hiroaki Muta ◽  
Shinsuke Yamanaka
Keyword(s):  
Thermal Conductivity ◽  
Thermoelectric Properties ◽  
Figure Of Merit ◽  
Room Temperature ◽  
Lattice Thermal Conductivity ◽  
Filling Ratio ◽  
Thermoelectric Figure Of Merit ◽  
Thermoelectric Figure ◽  
Alloy Scattering ◽  
Skutterudite Compound

AbstractCoSb3 is known as a skutterudite compound that could exhibit high thermoelectric figure of merit. However, the thermal conductivity of CoSb3 is relatively high. In order to enhance the thermoelectric performance of this compound, we tried to reduce the thermal conductivity of CoSb3 by substitution of Rh for Co and by Tl-filling into the voids. The polycrystalline samples of (Co,Rh)Sb3 and Tl-filled CoSb3 were prepared and the thermoelectric properties such as the Seebeck coefficient, electrical resistivity, and thermal conductivity were measured in the temperature range from room temperature to 750 K. The Rh substitution for Co reduced the lattice thermal conductivity, due to the alloy scattering effect. The minimum value of the lattice thermal conductivity was 4 Wm-1K-1 at 750 K obtained for (Co0.7Rh0.3)Sb3. Also the lattice thermal conductivity rapidly decreased with increasing the Tl-filling ratio. T10.25Co4Sb12 exhibited the best ZT values; the maximum ZT was 0.9 obtained at 600 K.

Thermoelectric Properties of Composite PbTe – PbSnS2 Materials

2010 ◽  
Vol 1267 ◽  
Author(s):  
Steven N Girard ◽  
Jiaqing He ◽  
Vinayak P Dravid ◽  
Mercouri Kanatzidis
Keyword(s):  
Thermal Conductivity ◽  
Thermoelectric Properties ◽  
Room Temperature ◽  
Lattice Thermal Conductivity ◽  
Preliminary Characterization ◽  
New Phase ◽  
Sn Substitution

AbstractThe thermoelectric (Pb1-mSnmTe)1-x(PbS)x where m = 0.05 and x = 0.08 has been shown to produce PbS nanostructures that effectively scatter phonons, enhancing ZT. As Sn substitution is increased, a new phase of PbSnS2 precipitates. We find that incorporation of PbSnS2 in PbTe results in a significant reduction in lattice thermal conductivity around 0.6 W/mK at room temperature. We present preliminary characterization and thermoelectric properties.

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