Blue and Yellow Electroluminescence of MOSLED Made on Si-rich SiOx Film with Detuning Buried Si Nanoclusters Size

ABSTRACTWe have demonstrated the blue and yellow electroluminescence of MOSLEDs made on Si-rich SiOx film with buried Si nanoclusters of different sizes. The situation of dehydrogenation of Si nanocrystals within the SiOx film becomes more pronounced then the re-growth of SiO2 matrix along with the prolongation of annealing time period. A linear variation on the O/Si composition ratio of the Si-rich SiOx film related to the deposition recipe is reported, giving rise to the precipitation of Si nanocrystals with different size. With such synthesis conditions, the SiOx films result in relatively strong photoluminescence at blue and yellow colors. From the comparison of the I–V curves we can conclude that there is a linear decrease on the threshold voltage of the SiOx based MOSLEDs by decreasing the thickness of the SiOx layer. According to EL pattern, we could demonstrate that the yellow- and blue-light pattern can be observed at 5.5 and 7.25 MV/cm, respectively.

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Effects of Si/Ni Composition Ratio of NixSiyGate Electrode and Hf/Si Composition Ratio of Hf-Based High-kInsulator on Threshold Voltage Controllability and Mobility of Metal–Oxide–Semiconductor Field-Effect Transistors

Japanese Journal of Applied Physics ◽

10.1143/jjap.49.036504 ◽

2010 ◽

Vol 49 (3) ◽

pp. 036504

Author(s):

Masayuki Terai ◽

Takashi Hase ◽

Kentaro Shibahara ◽

Hirohito Watanabe

Keyword(s):

Metal Oxide ◽

Threshold Voltage ◽

Field Effect ◽

Field Effect Transistors ◽

Metal Oxide Semiconductor ◽

Oxide Semiconductor ◽

Composition Ratio

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The Effect of Post-Conventional Thermal Annealing Process on the Photoluminescence Characteristics of Si+-Implanted SiO2 Thin Films

Key Engineering Materials ◽

10.4028/www.scientific.net/kem.602-603.1013 ◽

2014 ◽

Vol 602-603 ◽

pp. 1013-1016

Author(s):

Fann Wei Yang ◽

Chien Min Cheng ◽

Kai Huang Chen

Keyword(s):

Thin Films ◽

Annealing Time ◽

High Intensity ◽

Nitrogen Atmosphere ◽

Annealing Process ◽

Hrtem Image ◽

Plan View ◽

Si Nanocrystals ◽

Thermal Annealing Process ◽

Pl Intensity

The shifted band and high intensity of the photoluminescence characteristics for RTA-treated Si+-implanted SiO2thin films for 400-nm-thick thickness using post-CTA processing were discussed and investigated. The samples were treated in the temperature of 1150°C and 20s RTA processing under dry nitrogen atmosphere. The PL band of thin films obtained was 1.7 eV. However, the PL intensity of thin films was continuous decreased for RTA annealing time increased. In this study, the PL band for RTA-treated thin films using 1h post-CTA processing was shifted from 1.5 to 1.67 eV. In addition, the PL intensity of the thin films was increased under the post-CTA annealing time increased to 60s. From the plan-view of the HRTEM image, the Si nanocrystals of the RTA-treated thin films using post-CTA processing were observed. These results were related to the presence and variation of silicon Si nanocrystals embedded in thin films.

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Low threshold voltage blue light emitting diodes based on thulium doped gallium oxides

Applied Physics Express ◽

10.35848/1882-0786/ac10a7 ◽

2021 ◽

Author(s):

Zewei Chen ◽

Katsuhiko Saito ◽

Tooru Tanaka ◽

Qixin GUO

Keyword(s):

Blue Light ◽

Threshold Voltage ◽

Light Emitting Diodes ◽

Light Emitting ◽

Low Threshold ◽

Gallium Oxides

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Optimized O/Si Composition Ratio for Enhancing Si Nanocrystal Based Luminescence in Si-rich SiOx Grown by PECVD with Argon Diluted SiH4

MRS Proceedings ◽

10.1557/proc-1066-a18-11 ◽

2008 ◽

Vol 1066 ◽

Author(s):

Chung-Hsiang Chang ◽

Chin-Hua Hsieh ◽

Li-Jen Chou ◽

Gong-Ru Lin

Keyword(s):

Infrared Spectroscopy ◽

Significant Variation ◽

Near Infrared ◽

Gaussian Function ◽

Rutherford Backscattering ◽

Nonlinear Relationship ◽

Composition Ratio ◽

Fourier Transformed Infrared Spectroscopy ◽

Si Nanocrystals ◽

Si Nanocrystal

ABSTRACTEffect of O/Si composition ratio on near-infrared photoluminescence (PL) of PECVD grown Si-rich SiOx after 1100°C annealing are analyzed by Rutherford backscattering (RBS) and Fourier-transformed infrared spectroscopy (FTIR) to show nonlinear relationship with strongest PL at 760 nm at optimized O/Si = 1.24, total Si concentration of 44.6 atom.%, and N2O/SiH4 fluence ratio of 4.5. A nearly Gaussian function of the normalized PL intensity vs. O/Si composition ratio has been observed due to the significant variation on the Si nanocrystals size with the density of the excessive Si atoms.

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The use of a chimeric rhodopsin vector for the detection of new proteorhodopsins based on color

10.1101/162016 ◽

2017 ◽

Author(s):

Alina Pushkarev ◽

Gur Hevroni ◽

Sheila Roitman ◽

Jin-gon Shim ◽

Ahreum Choi ◽

...

Keyword(s):

Microbial Ecology ◽

Blue Light ◽

Pcr Amplification ◽

Marine Microbiology ◽

Laboratory Courses ◽

Functional Methods ◽

Time Period ◽

Oceanic Surface ◽

Green Pigments ◽

Short Time

AbstractStudent microbial ecology laboratory courses are often conducted as condensed courses in which theory and wet lab work are combined in a very intensive short time period. In last decades, the study of marine microbial ecology is increasingly reliant on molecular-based methods, and as a result many of the research projects conducted in such courses require sequencing that is often not available on site and may take more time than a typical course allows. In this work, we describe a protocol combining molecular and functional methods for analyzing proteorhodopsins (PRs), with visible results in only 4-5 days, that do not rely on sequencing. PRs were discovered in oceanic surface waters two decades ago, and have since been observed in different marine environments and diverse taxa, including the abundant alphaproteobacterial SAR11 group. PR subgroups are currently known to absorb green and blue light, and their distribution was previously explained by prevailing light conditions - green pigments at the surface and blue pigments in deeper waters, as blue light travels deeper in the water column. To detect PR in environmental samples, we created a chimeric plasmid suitable for direct expression of PRs using PCR amplification and functional analysis in Escherichia coli cells. Using this assay, we discovered several exceptional cases of PRs whose phenotypes differed from those predicted based on sequence only, including a previously undescribed yellow-light absorbing PRs. We applied this assay in two 10-days marine microbiology courses and found it to greatly enhance students’ laboratory experience, enabling them to gain rapid visual feedback and colorful reward for their work. Furthermore we expect this assay to promote the use of functional assays for the discovery of new rhodopsin variants.

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Study the Optical Characteristic of ZnO Nanostructure through Annealing at Various Time Period

Advanced Materials Research ◽

10.4028/www.scientific.net/amr.832.68 ◽

2013 ◽

Vol 832 ◽

pp. 68-72 ◽

Cited By ~ 2

Author(s):

R. Haarindra Prasad ◽

U. Hashim ◽

Kai Long Foo ◽

Tijjani Adam ◽

Mohd Shafiq

Keyword(s):

Zinc Oxide ◽

Annealing Time ◽

Electrical Characteristic ◽

Silicon Oxide ◽

Sol Gel ◽

Annealing Process ◽

Morphological Observation ◽

Precipitation Process ◽

Oxide Material ◽

Time Period

Main purpose of this research is to study the optical and electrical characteristic of zinc oxide material after undergoing annealing process at various time period. Hypothesis of this research have proved that the physical properties of zinc oxide material have changed by increasing time period for annealing process due to changes of optical and electrical characteristic of ZnO material. Morphological observation shows that, the transmittance properties of ZnO material on glass substrate varies after annealing at time period 5 hours compare to annealing time of 3 hours followed by annealing time of 1 hour. All the annealing process is conducted at temperature 200°C. Zinc oxide is synthesized through a facile method which is known as sol-gel method. Sol-gel solution is prepared based on mixture of zinc acetate dehydrate and stabilizer mono ethanolamine (MEA) with ratio 1:1 and the mixture solution is left for more than 24 hours for precipitation process to occur. The prepared solution is then coated with 3 layers on silicon oxide substrate and annealed at time period of 1 hour, 3 hours and 5 hours. The annealed samples with different period of time is further characterized through UV-Vis test and electrical test.

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Effect of Implantation Dose and Annealing Time on the Formation of Si Nanocrystals Embedded in Thermal Oxide

MRS Proceedings ◽

10.1557/proc-1020-gg07-19 ◽

2007 ◽

Vol 1020 ◽

Cited By ~ 1

Author(s):

Cong Qian ◽

Zheng-xuan Zhang ◽

Feng Zhang ◽

Cheng-lu Lin

Keyword(s):

Annealing Time ◽

Photoelectron Spectroscopy ◽

Implantation Dose ◽

Xps Analysis ◽

Chemical Changes ◽

X Ray ◽

Si Nanocrystals ◽

Thermal Oxide

AbstractPhotoluminescence (PL) and X-ray Photoelectron Spectroscopy (XPS) are employed to study the Si nanocrystals formed in the thermal oxide by Si+ implantation. PL results estimate the size of nanocrystals and the concentration of Pb centers in the Si-SiO2 nanocrystal-matrix interfaces. It is shown that the size of Si nanocrystals increase with implantation dose. Increasing the dose from 1×1016 to 1×1017 Si+/cm2 shifts the size of nanocrystals from ~2 nm to ~3.5nm, while prolonging the annealing time from 1h to 2h has no effect on the position of PL peak. P and Ar implantations into the SiO2 films are also investigated to suggested that the PL peak is due to implant induced chemical changes rather than implant induced damage. XPS analysis shows that the concentration of Si nanocrystals increases with Si implantation dose. Research on the annealing dependence of the forming of Si nanocrystals suggests that 1000°C annealing produces larger amount of Si nanocrystals than 1100°C annealing.

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Nearly Gaussian Dependence Between Near-Infrared Photoluminescence and O/Si Composition Ratio of Si-Rich SiOx Film with Buried Si Nanocrystals

Journal of Nanoscience and Nanotechnology ◽

10.1166/jnn.2010.2061 ◽

2010 ◽

Vol 10 (3) ◽

pp. 1663-1667 ◽

Cited By ~ 1

Author(s):

Gong-Ru Lin ◽

Chung-Hsiang Chang ◽

Yi-Hao Pai

Keyword(s):

Near Infrared ◽

Composition Ratio ◽

Si Nanocrystals

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Optical Properties of Si Nanoclusters with Passivated Surfaces

MRS Proceedings ◽

10.1557/proc-431-361 ◽

1996 ◽

Vol 431 ◽

Author(s):

L. N. Dinh ◽

L. L. Chase ◽

M. Balooch ◽

W. J. Siekhaus ◽

F. Wooten

Keyword(s):

Blue Shift ◽

Buffer Gas ◽

X Ray Diffraction ◽

X Ray ◽

Synthesis Conditions ◽

Pl Spectra ◽

Transmission Electron ◽

Si Nanocrystals ◽

Decay Times ◽

Average Size

AbstractSi nanoclusters with average size of a few nanometers have been synthesized by thermal vaporization of Si in an Ar buffer gas, and passivated with oxygen or atomic hydrogen. High resolution transmission electron microscopy (HRTEM) and X-ray diffraction (XRD) revealed that these nanoclusters were crystalline. All samples showed strong infrared and/or visible photoluminescence (PL) with varying decay times from nanoseconds to microseconds depending on synthesis conditions. Absorption mainly in the Si cores was observed by photoluminescence excitation (PLE) spectroscopy. The visible components of PL spectra were noted to blue shift and broaden as the size of the Si nanocrystals (nc-Si) was reduced, and there were differences in PL spectra for hydrogen and oxygen passivated nc-Si. Our data can be explained best by a model involving absorption between quantum confined states in the Si cores and emission by surface/interface states.

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