Ion Beam Deposition of Calcium Hydroxyapatite

1987 ◽  
Vol 110 ◽  
Author(s):  
B. L. Barthell ◽  
T. A. Archuleta ◽  
Ram Kossowsky

AbstractCalcium hydroxyapatite has been sputtered on glass and Ti-6Al-4V substrates using a 1.5-kV argon ion beam. The films have been examined by x-ray diffraction analysis, energy dispersive spectroscopy, scanning electron microscopy, and adhesion testing. Results of this experimentation are presented.

1990 ◽  
Vol 201 ◽  
Author(s):  
Kevin M. Hubbard ◽  
Nicole Bordes ◽  
Michael Nastasi ◽  
Joseph R. Tesmer

AbstractWe have investigated the fabrication of thin-film superconductors by Cu-ion implantation into initially Cu-deficient Y(BaF2)Cu thin films. The precursor films were co-evaporated on SrTiO3 substrates, and subsequently implanted to various doses with 400 keV 63Cu2+. Implantations were preformed at both LN2 temperature and at 380°C. The films were post-annealed in oxygen, and characterized as a function of dose by four-point probe analysis, X-ray diffraction, ion-beam backscattering and channeling, and scanning electron microscopy. It was found that a significant improvement in film quality could be achieved by heating the films to 380°C during the implantation. The best films became fully superconducting at 60–70 K, and exhibited good metallic R vs. T. behavior in the normal state.


1997 ◽  
Vol 485 ◽  
Author(s):  
H. R. Khan ◽  
H. Frey

AbstractSilicon films of thicknesses (100 – 800 nm) are deposited on Si[111] substrate at 490°C using Si+ ions of energies (20 – 70 eV) from Silane plasma. The structure of the films depends on the energy of Si+ ions and the film grows epitaxially for ion energy <20 eV. Si films are analyzed by X-ray diffraction technique.


2010 ◽  
Vol 09 (06) ◽  
pp. 549-552
Author(s):  
AYACHE RACHID ◽  
BOUABELLOU ABDERRAHMANE ◽  
EICHHORN FRANK

The processes in the synthesis of a thin layer of hexagonal YSi 2-x phase on a single-crystal Si (111) substrate by implantation of 195 keV Y ions with a dose of 2 × 1017 Y +/ cm 2 at 300°C followed by annealing in an N2 atmosphere at different temperatures for 1 h are investigated. The characterization of the as-implanted and annealed samples is performed using Rutherford backscattering spectrometry (RBS) and X-ray diffraction (XRD) pole figures. Scanning electron microscopy (SEM) was used to view the surface topography. The results show that the orientation relationship between the YSi 2-x layer and Si substrate is YSi 2-x(0001)// Si (111) and YSi 2-x[11–20]// Si [110].


Author(s):  
Л.С. Лунин ◽  
О.В. Девицкий ◽  
И.А. Сысоев ◽  
А.С. Пащенко ◽  
И.В. Касьянов ◽  
...  

Thin AlN films were obtained by the ion-beam deposition method on sapphire substrates. Studies were carried out using scanning electron microscopy, Raman scattering and optical spectroscopy. Dependences of influence of the ion-beam deposition parameters (composition of gas mixture, energy of the ion beam) on morphology, structure and optical properties of the AlN films on sapphire were revealed.


Author(s):  
В.Г. Костишин ◽  
А.Ю. Миронович ◽  
А.В. Тимофеев ◽  
И.М. Исаев ◽  
Р.И. Шакирзянов ◽  
...  

In this work, we studied textured ZnO films obtained by ion-beam deposition. X-ray diffraction patterns and micrographs of the surface revealed that asdeposited films have a polycrystalline structure. It was found that, after annealing of the samples in the temperature range from 200 ° C to 500 °, recrystallization occurs, leading to a change in the grain size and surface roughness. The dependence of the initial state of the film on the recrystallization intensity is also demonstrated. In films with an initially more perfect structure, temperature treatment at 500 ° C led to grain growth by more than 2 times and a decrease in roughness by ~ 40%.


1995 ◽  
Vol 388 ◽  
Author(s):  
J.H. Edgar ◽  
C.R. Eddy ◽  
J.A. Sprague ◽  
B.D. Sartwell

AbstractAnalysis of the phase behavior, structure, and composition of aluminum nitride thin films with up to 22% boron prepared by ion-beam assisted deposition is presented. the c-lattice constant of the film decreased with increasing boron content as expected from the formation of an aIN - wurtzite BN alloy. there was no evidence for separate boron nitride precipitation from either X-ray diffraction or FTIR. IN contrast, auger electron spectroscopy of the boron present in the films suggested that two types of boron bonding was present.


2019 ◽  
Vol 26 (04) ◽  
pp. 1850180
Author(s):  
WEI LIANG ◽  
QIFA PAN ◽  
YIN HU ◽  
LIZHU LUO ◽  
KEZHAO LIU ◽  
...  

Cerium mononitride (CeN) film was fabricated by dual ion beam sputtering deposition method on silicon wafer. The oxidization process of CeN film was monitored by optical microscopy (OM), scanning electron microscopy (SEM), X-ray diffraction (XRD) and X-ray photoelectron spectroscopy (XPS), respectively. The results showed that, when the CeN film was exposed to ambient atmosphere, bubbles appeared on the film surface rapidly and then the surface flaked off to powders. Meanwhile, the CeN film changed from polycrystalline to amorphous. XPS analysis indicated that the CeN was oxidized to Ce2O3 initially, and then further oxidized to CeO2. These results indicated that the CeN film degraded easily in ambient atmosphere, exhibiting little or no passivation.


Author(s):  
Vicki L. Baliga ◽  
Mary Ellen Counts

Calcium is an important element in the growth and development of plants and one form of calcium is calcium oxalate. Calcium oxalate has been found in leaf seed, stem material plant tissue culture, fungi and lichen using one or more of the following methods—polarized light microscopy (PLM), scanning electron microscopy (SEM), transmission electron microscopy (TEM) and x-ray diffraction.Two methods are presented here for qualitatively estimating calcium oxalate in dried or fixed tobacco (Nicotiana) leaf from different stalk positions using PLM. SEM, coupled with energy dispersive x-ray spectrometry (EDS), and powder x-ray diffraction were used to verify that the crystals observed in the dried leaf with PLM were calcium oxalate.


Author(s):  
Howard S. Kaufman ◽  
Keith D. Lillemoe ◽  
John T. Mastovich ◽  
Henry A. Pitt

Gallstones contain precipitated cholesterol, calcium salts, and proteins. Calcium (Ca) bilirubinate, palmitate, phosphate, and carbonate occurring in gallstones have variable morphologies but characteristic windowless energy dispersive x-ray (EDX) spectra. Previous studies of gallstone microstructure and composition using scanning electron microscopy (SEM) with EDX have been limited to dehydrated samples. In this state, Ca bilirubinates appear as either glassy masses, which predominate in black pigment stones, or as clusters, which are found mostly in cholesterol gallstones. The three polymorphs of Ca carbonate, calcite, vaterite, and aragonite, have been identified in gallstones by x-ray diffraction, however; the morphologies of these crystals vary in the literature. The purpose of this experiment was to study fresh gallstones by environmental SEM (ESEM) to determine if dehydration affects gallstone Ca salt morphology.Gallstones and bile were obtained fresh at cholecystectomy from 6 patients. To prevent dehydration, stones were stored in bile at 37°C. All samples were studied within 4 days of procurement.


Author(s):  
M. Spector ◽  
A. C. Brown

Ion beam etching and freeze fracture techniques were utilized in conjunction with scanning electron microscopy to study the ultrastructure of normal and diseased human hair. Topographical differences in the cuticular scale of normal and diseased hair were demonstrated in previous scanning electron microscope studies. In the present study, ion beam etching and freeze fracture techniques were utilized to reveal subsurface ultrastructural features of the cuticle and cortex.Samples of normal and diseased hair including monilethrix, pili torti, pili annulati, and hidrotic ectodermal dysplasia were cut from areas near the base of the hair. In preparation for ion beam etching, untreated hairs were mounted on conducting tape on a conducting silicon substrate. The hairs were ion beam etched by an 18 ky argon ion beam (5μA ion current) from an ETEC ion beam etching device. The ion beam was oriented perpendicular to the substrate. The specimen remained stationary in the beam for exposures of 6 to 8 minutes.


Sign in / Sign up

Export Citation Format

Share Document