Blue/White Emission from Hydrogenated Amorphous Silicon Carbide Films Prepared by PECVD

2009 ◽  
Vol 1153 ◽  
Author(s):  
Volodymyr Ivashchenko ◽  
Andrey Vasin ◽  
L. A. Ivashchenko ◽  
P. L. Skrynskyy
Keyword(s):  
Silicon Carbide ◽  
Photoelectron Spectroscopy ◽  
Chemical Vapor ◽  
Substrate Bias ◽  
Double Peak ◽  
Hydrogenated Silicon ◽  
X Ray ◽  
Force Microscopy ◽  
Atomic Force ◽  
The One

AbstractPhotoluminescence (PL) from hydrogenated silicon carbide (SiC:H) films is studied at room temperature. The films were deposited by plasma-enhanced chemical vapor (PECVD) technique with and without substrate bias using methyltrichlorosilane as a main precursor. After the deposition the samples were annealed at various temperatures in vacuum. The films were characterized by atomic force microscopy (AFM), Fourier transform infrared spectroscopy (FTIR), X-ray photoelectron spectroscopy (XPS) and X-ray diffraction (XRD). The samples deposited without substrate bias (series A) were amorphous, whereas the samples deposited with negative substrate bias -100V (series B) were nanocrystalline. The one-peak (470 nm) and double-peak (415 and 437 nm) PL structures of the as-deposited samples A and B were observed, respectively. Annealing strongly enhanced intensity of PL of the samples B and trandformed PL spectrum from double-peak into broad featureless band with intensity at about 470 nm. The blue PL in as-deposited films B is supposed to be assigned to the radiative recombination in the sites located at the nanocrystallite surface, whereas the photo excitation of carries mostly occurs in nanocrystallite cores. A further increase in annealing temperature causes hydrogen effusion, which leads to an increase of the concentration of non-raidative recombination centers associated with dangling-bonds and as a result, to the quenching of PL.

Low-temperature growth of HfO2 dielectric layers by Plasma-Enhanced CVD

2003 ◽  
Vol 786 ◽  
Author(s):  
M. Losurdo ◽  
M.M. Giangregorio ◽  
M. Luchena ◽  
P. Capezzuto ◽  
G. Bruno ◽  
...  
Keyword(s):  
Photoelectron Spectroscopy ◽  
Growth Dynamics ◽  
Chemical Vapor ◽  
Optical Emission ◽  
Interface Layer ◽  
X Ray Diffraction ◽  
X Ray ◽  
Force Microscopy ◽  
Atomic Force ◽  
Dielectric Layers

ABSTRACTHfO2 dielectric layers have been grown on p -type Si(100) by plasma enhanced chemical vapor deposition (PE-CVD), using Ar-O2 plasmas and hafnium(IV) tetra-t -butoxide as precursors. In-situ control of the plasma phase is carried out by optical emission spectroscopy (OES) and quadrupolar mass spectrometry (QMS).Structural and optical properties of the HfO2 layers and of the HfO2/Si interface are investigated by spectroscopic ellipsometry (SE) in the photon energy range 1.5–6.0 eV‥ SE data are corroborated by results obtained from glancing incidence X-ray diffraction (GIXRD), atomic force microscopy (AFM) and X-ray photoelectron spectroscopy (XPS).The effect of the substrate temperature (RT-250°C) and precursor flow on the thickness of interfacial SiO2 layer and on the HfO2 microstructure is investigated. The growth dynamics of HfO2 film and SiO2 interface layer is also discussed.

Investigation of the Effect of Uv-Assisted Oxidation and Nitridation of Hafnium Metal Films

2003 ◽  
Vol 780 ◽  
Author(s):  
C. Essary ◽  
V. Craciun ◽  
J. M. Howard ◽  
R. K. Singh
Keyword(s):  
Uv Radiation ◽  
Photoelectron Spectroscopy ◽  
Grazing Angle ◽  
X Ray Diffraction ◽  
Metal Thin Films ◽  
X Ray ◽  
Force Microscopy ◽  
Si Substrates ◽  
Atomic Force ◽  
Silicon Interface

AbstractHf metal thin films were deposited on Si substrates using a pulsed laser deposition technique in vacuum and in ammonia ambients. The films were then oxidized at 400 °C in 300 Torr of O2. Half the samples were oxidized in the presence of ultraviolet (UV) radiation from a Hg lamp array. X-ray photoelectron spectroscopy, atomic force microscopy, and grazing angle X-ray diffraction were used to compare the crystallinity, roughness, and composition of the films. It has been found that UV radiation causes roughening of the films and also promotes crystallization at lower temperatures.Furthermore, increased silicon oxidation at the interface was noted with the UVirradiated samples and was shown to be in the form of a mixed layer using angle-resolved X-ray photoelectron spectroscopy. Incorporation of nitrogen into the film reduces the oxidation of the silicon interface.

Curcumin delivery by modified biosourced carbon-based nanoparticles

Nanomedicine ◽  
2022 ◽  
Author(s):  
Hossein Danafar ◽  
Marziyeh Salehiabar ◽  
Murat Barsbay ◽  
Hossein Rahimi ◽  
Mohammadreza Ghaffarlou ◽  
...  
Keyword(s):  
Photoelectron Spectroscopy ◽  
Free System ◽  
X Ray ◽  
Force Microscopy ◽  
Atomic Force ◽  
Transmission Electron ◽  
Good Biocompatibility ◽  
Drug Free ◽  
Mcf 7 ◽  
Carbon Based

Aim: To prepare a novel hybrid system for the controlled release and delivery of curcumin (CUR). Methods: A method for the ultrasound-assisted fabrication of protein-modified nanosized graphene oxide-like carbon-based nanoparticles (CBNPs) was developed. After being modified with bovine serum albumin (BSA), CUR was loaded onto the synthesized hybrid (labeled CBNPs@BSA–CUR). The structure and properties of the synthesized nanoparticles were elucidated using transmission electron microscopy (TEM), atomic force microscopy (AFM), ultraviolet-visible spectroscopy (UV-Vis), Fourier-transform infrared spectroscopy (FTIR) and x-ray photoelectron spectroscopy (XPS) methods. Results: CBNPs@BSA–CUR showed pH sensitivity and were calculated as controlled CUR release behavior. The drug-free system exhibited good biocompatibility and was nontoxic. However, CBNPs@BSA–CUR showed acceptable antiproliferative ability against MCF-7 breast cancer cells. Conclusion: CBNPs@BSA–CUR could be considered a highly promising nontoxic nanocarrier for the delivery of CUR with good biosafety.

Effect of Surface Chemistry on Ruthenium Wet Etching

2021 ◽  
Vol 314 ◽  
pp. 302-306
Author(s):  
Quoc Toan Le ◽  
E. Kesters ◽  
M. Doms ◽  
Efrain Altamirano Sánchez
Keyword(s):  
Surface Roughness ◽  
Photoelectron Spectroscopy ◽  
Etching Rate ◽  
Wet Etching ◽  
X Ray ◽  
Force Microscopy ◽  
Metal Free ◽  
Atomic Force ◽  
Different Types ◽  
Effect Of Surface

Different types of ALD Ru films, including as-deposited, annealed Ru, without and with a subsequent CMP step, were used for wet etching study. With respect to the as-deposited Ru, the etching rate of the annealed Ru film in metal-free chemical mixtures (pH = 7-9) was found to decrease substantially. X-ray photoelectron spectroscopy characterization indicated that this behavior could be explained by the presence of the formation of RuOx (x = 2,3) caused by the anneal. A short CMP step applied to the annealed Ru wafer removed the surface RuOx, at least partially, resulting in a significant increase of the etching rate. The change in surface roughness was quantified using atomic force microscopy.

Investigation of Ti/CuO interface by X-ray photoelectron spectroscopy and atomic force microscopy

2018 ◽  
Vol 51 (2) ◽  
pp. 246-253
Author(s):  
Dev Raj Chopra ◽  
Justin Seth Pearson ◽  
Darius Durant ◽  
Ritesh Bhakta ◽  
Anil R. Chourasia
Keyword(s):  
Atomic Force Microscopy ◽  
Photoelectron Spectroscopy ◽  
X Ray ◽  
Force Microscopy ◽  
Atomic Force

scholarly journals Influence of the growth parameters of TiO2 thin films deposited by the MOCVD method

Cerâmica ◽  
2002 ◽  
Vol 48 (305) ◽  
pp. 38-42 ◽  
Author(s):  
M. I. B. Bernardi ◽  
E. J. H. Lee ◽  
P. N. Lisboa-Filho ◽  
E. R. Leite ◽  
E. Longo ◽  
...  
Keyword(s):  
Thin Films ◽  
Growth Parameters ◽  
Structural Characteristics ◽  
Chemical Vapor ◽  
X Ray Diffraction ◽  
Tio2 Thin Films ◽  
X Ray ◽  
Force Microscopy ◽  
Atomic Force ◽  
Deposition Parameters

The synthesis of TiO2 thin films was carried out by the Organometallic Chemical Vapor Deposition (MOCVD) method. The influence of deposition parameters used during growth on the final structural characteristics was studied. A combination of the following experimental parameters was studied: temperature of the organometallic bath, deposition time, and temperature and substrate type. The high influence of those parameters on the final thin film microstructure was analyzed by scanning electron microscopy with electron dispersive X-ray spectroscopy, atomic force microscopy and X-ray diffraction.

Characterization of X-ray irradiated graphene oxide coatings using X-ray diffraction, X-ray photoelectron spectroscopy, and atomic force microscopy

2013 ◽  
Vol 28 (2) ◽  
pp. 68-71 ◽  
Author(s):  
Thomas N. Blanton ◽  
Debasis Majumdar
Keyword(s):  
Atomic Force Microscopy ◽  
Graphene Oxide ◽  
Photoelectron Spectroscopy ◽  
High Energy ◽  
X Ray Diffraction ◽  
Carbon Phase ◽  
X Ray ◽  
Force Microscopy ◽  
Atomic Force ◽  
Before And After

In an effort to study an alternative approach to make graphene from graphene oxide (GO), exposure of GO to high-energy X-ray radiation has been performed. X-ray diffraction (XRD), X-ray photoelectron spectroscopy (XPS), and atomic force microscopy (AFM) have been used to characterize GO before and after irradiation. Results indicate that GO exposed to high-energy radiation is converted to an amorphous carbon phase that is conductive.

scholarly journals Influence of the Microstructure and Optical Constants on Plasmonic Properties of Copper Nanolayers

Materials ◽  
2021 ◽  
Vol 14 (23) ◽  
pp. 7292
Author(s):  
Tomasz Rerek ◽  
Beata Derkowska-Zielinska ◽  
Marek Trzcinski ◽  
Robert Szczesny ◽  
Mieczyslaw K. Naparty ◽  
...  
Keyword(s):  
Surface Plasmon ◽  
Photoelectron Spectroscopy ◽  
Surface Plasmon Polariton ◽  
Optical Constants ◽  
Localized Surface Plasmon ◽  
Silicon Substrates ◽  
X Ray ◽  
Force Microscopy ◽  
Atomic Force ◽  
Plasmon Polariton

Copper layers with thicknesses of 12, 25, and 35 nm were thermally evaporated on silicon substrates (Si(100)) with two different deposition rates 0.5 and 5.0 Å/s. The microstructure of produced coatings was studied using atomic force microscopy (AFM) and powder X-ray diffractometer (XRD). Ellipsometric measurements were used to determine the effective dielectric functions <ε˜> as well as the quality indicators of the localized surface plasmon (LSP) and the surface plasmon polariton (SPP). The composition and purity of the produced films were analysed using X-ray photoelectron spectroscopy (XPS).

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