Selective Atomic Layer Deposition (SALD) of Titanium Dioxide on Silicon
                        and Copper Patterned Substrates

Atomic Layer Deposition (ALD) of TiO2 has potential applications in the microelectronics industry for purposes such as formation of the copper barrier layer. In this paper, TiO2 deposition on silicon and copper substrates is studied, with a focus on the initial growth and nucleation period on different substrates. Silicon with native oxide about 1.5 nm-thick, silicon with reduced oxide <1 nm-thick, and silicon/copper patterned substrates with native oxide are tested for TiO2 deposition. The temperature-independent window on silicon is studied, and findings are used encourage selective deposition on the silicon portions of a copper-patterned silicon substrate. Selective ALD is found to be possible on silicon portions by taking advantage of the 15-20 cycle TiO2 nucleation period on copper, allowing a film approximately 2.5 nm-thick to grow on silicon while less than two monolayers grow on copper. Findings can be used in future work to further promote selective deposition of TiO2.

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Atomic Layer Deposition of Ruthenium Films on Hydrogen terminated Silicon

MRS Proceedings ◽

10.1557/proc-1156-d04-02 ◽

2009 ◽

Vol 1156 ◽

Cited By ~ 1

Author(s):

Sun Kyung Park ◽

K. Roodenko ◽

Yves J. Chabal ◽

L. Wielunski ◽

R. Kanjolia ◽

...

Keyword(s):

Atomic Layer Deposition ◽

Atomic Layer ◽

Initial Growth ◽

Experimental Conditions ◽

Metallic Component ◽

Broadband Absorption ◽

Lorentz Oscillator ◽

Layer Deposition ◽

Drude Term ◽

Number Of Cycles

AbstractAtomic Layer deposition of thin Ruthenium films has been studied using a newly synthesized precursor (Cyclopentadienyl ethylruthenium dicarbonyl) and O2 as reactant gases. Under our experimental conditions, the film comprises both Ru and RuO2. The initial growth is dominated by Ru metal. As the number of cycles is increased, RuO2 appears. From infrared broadband absorption measurements, the transition from isolated, nucleated film to a continuous, conducting film (characterized by Drude absorption) can be determined. Optical simulations based on an effective-medium approach are implemented to simulate the in-situ broadband infrared absorption. A Lorentz oscillator model is developed, together with a Drude term for the metallic component, to describe optical properties of Ru/RuO2 growth.

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Facile rearrangement of molecular layer deposited metalcone thin films by electron beam irradiation for area selective atomic layer deposition

Dalton Transactions ◽

10.1039/d1dt01380g ◽

2021 ◽

Author(s):

Seunghwan Lee ◽

GeonHo Baek ◽

Hye-mi Kim ◽

Yong-Hwan Kim ◽

Jin-Seong Park

Keyword(s):

Thin Films ◽

Electron Beam ◽

Atomic Layer Deposition ◽

Electron Beam Irradiation ◽

Molecular Layer ◽

Atomic Layer ◽

Beam Irradiation ◽

Selective Deposition ◽

Layer Deposition ◽

Amorphous Structures

Metalcone films can be rearranged from amorphous structures to 2D-like carbon by electron beam irradiation. The irradiated indicone (HQ) film can be used as an inhibitor for selective deposition delaying 20 cycles of ALD of ZnO.

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Influence of the Geometric Parameters on the Deposition Mode in Spatial Atomic Layer Deposition: A Novel Approach to Area-Selective Deposition

Coatings ◽

10.3390/coatings9010005 ◽

2018 ◽

Vol 9 (1) ◽

pp. 5 ◽

Cited By ~ 5

Author(s):

César Masse de la Huerta ◽

Viet Nguyen ◽

Jean-Marc Dedulle ◽

Daniel Bellet ◽

Carmen Jiménez ◽

...

Keyword(s):

Fluid Dynamics ◽

Atomic Layer Deposition ◽

Chemical Vapor ◽

Atomic Layer ◽

Dynamics Simulation ◽

Selective Deposition ◽

Temporal Separation ◽

Present Contribution ◽

Chemical Vapor Deposition Growth ◽

Layer Deposition

Within the materials deposition techniques, Spatial Atomic Layer Deposition (SALD) is gaining momentum since it is a high throughput and low-cost alternative to conventional atomic layer deposition (ALD). SALD relies on a physical separation (rather than temporal separation, as is the case in conventional ALD) of gas-diluted reactants over the surface of the substrate by a region containing an inert gas. Thus, fluid dynamics play a role in SALD since precursor intermixing must be avoided in order to have surface-limited reactions leading to ALD growth, as opposed to chemical vapor deposition growth (CVD). Fluid dynamics in SALD mainly depends on the geometry of the reactor and its components. To quantify and understand the parameters that may influence the deposition of films in SALD, the present contribution describes a Computational Fluid Dynamics simulation that was coupled, using Comsol Multiphysics®, with concentration diffusion and temperature-based surface chemical reactions to evaluate how different parameters influence precursor spatial separation. In particular, we have used the simulation of a close-proximity SALD reactor based on an injector manifold head. We show the effect of certain parameters in our system on the efficiency of the gas separation. Our results show that the injector head-substrate distance (also called deposition gap) needs to be carefully adjusted to prevent precursor intermixing and thus CVD growth. We also demonstrate that hindered flow due to a non-efficient evacuation of the flows through the head leads to precursor intermixing. Finally, we show that precursor intermixing can be used to perform area-selective deposition.

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Study on fabrication method of composite oxide by room temperature atomic layer deposition

Impact ◽

10.21820/23987073.2020.5.16 ◽

2020 ◽

Vol 2020 (5) ◽

pp. 16-18

Author(s):

Fumihiko Hirose

Keyword(s):

Thin Films ◽

Atomic Layer Deposition ◽

Graduate School ◽

Room Temperature ◽

Atomic Layer ◽

Science And Engineering ◽

Layer Deposition ◽

Potential Applications ◽

Properties Of Materials ◽

Conducting Research

Thin films can be used to improve the surface properties of materials, enhancing elements such as absorption, abrasion resistance and corrosion resistance, for example. These thin films provide the foundation for a variety of applications in various fields and their applications depend on their morphology and stability, which is influenced by how they are deposited. Thin films can be deposited in different ways. One of these is a technology called atomic layer deposition (ALD). Professor Fumihiko Hirose, a scientist based at the Graduate School of Science and Engineering, Yamagata University, Japan, is conducting research on the room temperature ALD of oxide metals. Along with his team, Professor Hirose has developed a new and improved way of performing ALD to create thin films, and the potential applications are endless.

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Nucleation Studies of HfO2 Thin Films Produced by Atomic Layer Deposition

MRS Proceedings ◽

10.1557/proc-0996-h03-09 ◽

2007 ◽

Vol 996 ◽

Author(s):

Justin C. Hackley ◽

J. Derek Demaree ◽

Theodosia Gougousi

Keyword(s):

Thin Films ◽

Atomic Layer Deposition ◽

Photoelectron Spectroscopy ◽

Flow Reactor ◽

Atomic Layer ◽

Sample Surface ◽

Interfacial Region ◽

Initial Growth ◽

Layer Deposition ◽

Similar Growth

AbstractA hot wall Atomic Layer Deposition (ALD) flow reactor equipped with a Quartz Crystal Microbalance (QCM) has been used for the deposition of HfO2 thin films with tetrakis (dimethylamino) hafnium (TDMAH) and H2O as precursors. HfO2 films were deposited on H-terminated Si and SC1 chemical oxide starting surfaces. Spectroscopic ellipsometry (SE) and QCM measurements confirm linear growth of the films at a substrate temperature of 275°C. FTIR spectra indicate the films are amorphous as-deposited. Two distinct growth regimes are observed: from 1-50 cycles, both surfaces display similar growth rates of about 1.0Å/cycle; from 50-200 cycles, HfO2 growth is decreased by about 15% to ~0.87Å/cycle on both surfaces. Nucleation and initial growth behavior of the films on Si-H were examined using X-ray photoelectron spectroscopy (XPS). Angle-resolved XPS, at take-off angles of θ=0, 15, 30, 45 and 60° measured from the normal to the sample surface, is used to probe the interfacial region of thin films (4, 7, 10, 15 and 25 cycles) on H-terminated samples. Initially, an interfacial layer comprised of a SiOx/HfSiOx mixture is grown between 1-10 ALD cycles. We observe that the Si/HfO2 interface is unstable, and oxidation continues up to the 25th ALD cycle, reaching a thickness of ~18Å.

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Low temperature Topographically Selective Deposition by Plasma Enhanced Atomic Layer Deposition with ion bombardment assistance

Journal of Vacuum Science & Technology A Vacuum Surfaces and Films ◽

10.1116/6.0000649 ◽

2021 ◽

Vol 39 (3) ◽

pp. 032416

Author(s):

Taguhi Yeghoyan ◽

Vincent Pesce ◽

Moustapha Jaffal ◽

Gauthier Lefevre ◽

Rémy Gassilloud ◽

...

Keyword(s):

Low Temperature ◽

Atomic Layer Deposition ◽

Atomic Layer ◽

Ion Bombardment ◽

Selective Deposition ◽

Layer Deposition

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Surface Modification of Catalysts via Atomic Layer Deposition for Pollutants Elimination

Catalysts ◽

10.3390/catal10111298 ◽

2020 ◽

Vol 10 (11) ◽

pp. 1298

Author(s):

Xiaofeng Wang ◽

Zhe Zhao ◽

Chengcheng Zhang ◽

Qingbo Li ◽

Xinhua Liang

Keyword(s):

Surface Modification ◽

Atomic Layer Deposition ◽

Environmental Remediation ◽

Particle Deposition ◽

Nanostructured Catalysts ◽

Atomic Layer ◽

Catalytic Performance ◽

Selective Deposition ◽

Conformal Coating ◽

Layer Deposition

In recent years, atomic layer deposition (ALD) is widely used for surface modification of materials to improve the catalytic performance for removing pollutants, e.g., CO, hydrocarbons, heavy metal ions, and organic pollutants, and much progress has been achieved. In this review, we summarize the recent development of ALD applications in environmental remediation from the perspective of surface modification approaches, including conformal coating, uniform particle deposition, and area-selective deposition. Through the ALD conformal coating, the activity of photocatalysts improved. Uniform particle deposition is used to prepare nanostructured catalysts via ALD for removal of air pollutions and dyes. Area-selective deposition is adopted to cover the specific defects on the surface of materials and synthesize bimetallic catalysts to remove CO and other contaminations. In addition, the design strategy of catalysts and shortcomings of current studies are discussed in each section. At last, this review points out some potential research trends and comes up with a few routes to further improve the performance of catalysts via ALD surface modification and deeper investigate the ALD reaction mechanisms.

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Chemistry of active oxygen in RuOx and its influence on the atomic layer deposition of TiO2 films

Journal of Materials Chemistry C ◽

10.1039/c4tc01381f ◽

2014 ◽

Vol 2 (46) ◽

pp. 9993-10001 ◽

Cited By ~ 13

Author(s):

Woojin Jeon ◽

Woongkyu Lee ◽

Yeon Woo Yoo ◽

Cheol Hyun An ◽

Jeong Hwan Han ◽

...

Keyword(s):

Atomic Layer Deposition ◽

Crucial Role ◽

Growth Stage ◽

Catalytic Decomposition ◽

Atomic Layer ◽

Active Oxygen ◽

Initial Growth ◽

Tio2 Films ◽

Initial Growth Stage ◽

Layer Deposition

The catalytic decomposition of RuO2 with the help of Ru in the film played the crucial role for the increase in the active oxygen, which results that the growth per cycle of TiO2 at the initial growth stage was drastically increased on RuOx (RuO2/Ru mixture) compared to Ru and RuO2.

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