Topographic Kinetics and Practice of Low Angle Ion Beam Thinning

1991 ◽  
Vol 254 ◽  
Author(s):  
Árpád Barna
Keyword(s):  
Surface Topography ◽  
Incidence Angle ◽  
Ion Beam ◽  
Sample Surface ◽  
Geometrical Model ◽  
Ion Beam Etching ◽  
Reasonable Time ◽  
Beam Density ◽  
Wide Range ◽  
Simple Geometrical Model

AbstractThe thinning technique is based on a simple geometrical model, describing the changes in the surface topography during ion beam etching. A high ion beam density makes jt possible that a thinning with an incidence angle of 0.5–7° ( measured from the sample surface) can take place within a reasonable time. Our method is applicable to a wide range of materials and to XTEM preparation.

Hydrogen Ion Beam Processing of Single Crystal Diamond Chips

1994 ◽  
Vol 354 ◽  
Author(s):  
Shuji Kiyohara ◽  
Iwao Miyamoto
Keyword(s):  
Surface Roughness ◽  
Single Crystal ◽  
Incidence Angle ◽  
Ion Beam ◽  
Etching Rate ◽  
Hydrogen Ion ◽  
Hydrogen Ions ◽  
Ion Beam Etching ◽  
Single Crystal Diamond ◽  
Before And After

AbstractIn order to apply ion beam etching with hydrogen ions to the ultra-precision processing of diamond tools, hydrogen ion beam etching characteristics of single crystal diamond chips with (100) face were investigated. The etching rate of diamond for 500 eV and 1000 eV hydrogen ions increases with the increase of the ion incidence angle, and eventually reaches a maximum at the ion incidence angle of approximately 50°, then may decrease with the increase of the ion incidence angle. The dependence of the etching rate on the ion incidence angle of hydrogen ions is fairly similar to that obtained with argon ions. Furthermore, the surface roughness of diamond chips before and after hydrogen ion beam etching was evaluated using an atomic force microscope. Consequently, the surface roughness after hydrogen ion beam etching decreases with the increase of the ion incidence angle within range of the ion incidence angle of 60°.

Planarization of diamond thin film surfaces by ion beam etching at grazing incidence angle

1996 ◽  
Vol 5 (6-8) ◽  
pp. 835-839 ◽  
Author(s):  
S. Ilias ◽  
G. Sené ◽  
P. Möller ◽  
V. Stambouli ◽  
J. Pascallon ◽  
...  
Keyword(s):  
Thin Film ◽  
Incidence Angle ◽  
Ion Beam ◽  
Grazing Incidence ◽  
Ion Beam Etching ◽  
Diamond Thin Film ◽  
Grazing Incidence Angle

Importance of Internal Ion Beam Parameters on the Self-organized Pattern Formation with Low-energy Broad Beam Ion Sources

2009 ◽  
Vol 1181 ◽  
Author(s):  
Marina I Cornejo ◽  
Bashkim Ziberi ◽  
Michael Tartz ◽  
Horst Neumann ◽  
Frank Frost ◽  
...  
Keyword(s):  
Angular Distribution ◽  
Surface Topography ◽  
Incidence Angle ◽  
Ion Beam ◽  
Plasma Sheath ◽  
Low Energy ◽  
Optical Parameters ◽  
Broad Beam ◽  
Beam Parameters ◽  
Total Voltage

AbstractThe low energy ion beam erosion of solid surfaces is a simple bottom-up approach for the generation of nanostructures. For certain sputtering conditions caused by self-organization processes well ordered nanostructures on the surface like one-dimensional ripples or regular arrays of dots can be formed [1]. Using broad beam sources, the low energy ion beam erosion can be a cost-efficient method to produce large-area nanostructured surfaces in a one-step process.The processes involved have been studied in the last decades and the pattern formation is attributed to the competition of curvature dependant sputtering and various relaxation mechanisms. It is also well known that the ion beam incidence angle (the angle between the sample surface normal and the axis of the beam source) is one critical parameter that determines the surface topography. However, inherent to all broad beam sources, the ion beam exhibits a certain divergence, i.e. the ion trajectories are not parallel to each other. This generates a spread of the local incidence angle with respect to the geometrically defined beam incidence angle.Recent studies showed that the divergence angle and angular distribution of the ions, here called internal beam parameters, also affect the surface topography [2].The angular distribution can be controlled by the total voltage applied on the geometrical defined ion optical system of the broad beam ion source. For the given multi-aperture two-grid ion optical system the total voltage is the sum of the voltages applied to the first (screen) and second (accelerator) grid. This total voltage, together with the geometrical characteristics of the used grid systems, including the shape of the plasma sheath boundary at the screen grid, define the overall ion-optical parameters of the source, i. e. the divergence angle and angular distribution of the ions within the beam.In this contribution a first approach of the effect of the internal beam parameters on the surface topography is presented. It was analyzed the effect on the topography on Si surfaces of some experimental parameters that affect the internal beam parameters by changing the ion-optical parameters and the shape of the plasma sheath boundary. Explicitly, the influence of the discharge voltage, the operation time and the distance between the screen and accelerator grid is shown.[1] B. Ziberi, M. Cornejo, F. Frost, B. Rauschenbach, J. Phys.: Condens. Matter (submitted).[2] B. Ziberi, F. Frost, M. Tartz, H. Neumann, B. Rauschenbach, Appl. Phys. Lett. 92, 063102 (2008)

Ion Beam Etching System for Mercury Cadmium Telluride and III-V Compound Semiconductors

1991 ◽  
Vol 236 ◽  
Author(s):  
Geoffrey K. Reeves ◽  
Patrick. W. Leech ◽  
Patrick Bond
Keyword(s):  
Cadmium Telluride ◽  
Mercury Cadmium Telluride ◽  
Ion Beam ◽  
Compound Semiconductors ◽  
Ion Source ◽  
Rotating Platform ◽  
Ion Beam Etching ◽  
Wide Range ◽  
Wet Chemical ◽  
Etching System

AbstractThis paper describes a laboratory built ion beam etching system and its performance when used for etching Hg1-xCdxTe, GaAs and InP. The etching system provides a means for forming device mesas on a wide range of semiconductors without having to resort to wet chemical etches. The system uses a Kaufmann ion source, a rotating platform and two flow controllers to allow the variation of gas ratios and flows.

scholarly journals Research of FIB local milling processes for creation of nanosized field emission structures

2021 ◽  
Vol 2086 (1) ◽  
pp. 012201
Author(s):  
I V Panchenko ◽  
N A Shandyba ◽  
A S Kolomiytsev
Keyword(s):  
Field Emission ◽  
Focused Ion Beam ◽  
Ion Beam ◽  
Experimental Studies ◽  
Current Voltage Characteristic ◽  
Ion Beam Etching ◽  
Surface Profiling ◽  
Current Voltage ◽  
Wide Range ◽  
Maximum Current

Abstract The paper presents the results of experimental studies of the influence of the main parameters of a focused ion beam (FIB) during surface profiling on the accuracy of transfer of a pattern to a silicon substrate to create nanoscale field emission structures. In this work, the optimal FIB currents are determined, introducing a minimum amount of distortions during the formation of structures of various sizes. The possibilities of the method of local ion-beam etching of structures in a wide range from 0.1 to 2 μm are shown. The prospects of using this technology for the creation of field emission structures have been demonstrated. It is determived the current-voltage characteristic of the fabricated field-emission cells with a threshold voltage of the onset of emission of ∼ 2.5 V and a maximum current of 300 nA at 30 V.

scholarly journals Angular Dependence of the Ion-Induced Secondary Electron Emission for He+ and Ga+ Beams

2011 ◽  
Vol 17 (4) ◽  
pp. 624-636 ◽  
Author(s):  
Vincenzo Castaldo ◽  
Josephus Withagen ◽  
Cornelius Hagen ◽  
Pieter Kruit ◽  
Emile van Veldhoven
Keyword(s):  
Secondary Electron ◽  
Focused Ion Beam ◽  
Incidence Angle ◽  
Ion Beam ◽  
Secondary Electron Emission ◽  
Surface Characteristics ◽  
Sample Surface ◽  
Secondary Electron Yield ◽  
Flat Surfaces ◽  
Electron Yield

AbstractIn recent years, novel ion sources have been designed and developed that have enabled focused ion beam machines to go beyond their use as nano-fabrication tools. Secondary electrons are usually taken to form images, for their yield is high and strongly dependent on the surface characteristics, in terms of chemical composition and topography. In particular, the secondary electron yield varies characteristically with the angle formed by the beam and the direction normal to the sample surface in the point of impact. Knowledge of this dependence, for different ion/atom pairs, is thus the first step toward a complete understanding of the contrast mechanism in scanning ion microscopy. In this article, experimentally obtained ion-induced secondary electron yields as a function of the incidence angle of the beam on flat surfaces of Al and Cr are reported, for usual conditions in Ga+ and He+ microscopes. The curves have been compared with models and simulations, showing a good agreement for most of the angle range; deviations from the expected behavior are addressed and explanations are suggested. It appears that the maximum value of the ion-induced secondary electron yield is very similar in all the studied cases; the yield range, however, is consistently larger for helium than for gallium, which partially explains the enhanced topographical contrast of helium microscopes over the gallium focused ion beams.

Engineering Morphology of Surfaces by Oblique Angle Etching

2007 ◽  
Vol 1059 ◽  
Author(s):  
Mehmet F. Cansizoglu ◽  
Tansel Karabacak
Keyword(s):  
Self Assembly ◽  
Incidence Angle ◽  
Ion Beam ◽  
Growth Front ◽  
Oblique Angle ◽  
Etching Technique ◽  
Ripple Formation ◽  
Wide Range ◽  
Engineering Morphology ◽  
Shadowing Effect

ABSTRACTDuring a typical chemical etching process growth front morphology generally generates an isotropic rough surface. In this work, we show that it is possible to form a rippled surface morphology through a geometrical self-assembly process using a chemical oblique angle etching technique. We observe in our Monte Carlo simulations that obliquely incident reactive species preferentially etch the hills that are exposed to the beam direction due to the shadowing effect. In addition, species with non-unity sticking (etching) coefficients can be re-emitted from the side walls of the hills and etch the valleys, which at the end can lead to the formation of ripples along the direction of the beam. This mechanism is quite different than the previously reported ripple formation during ion-beam bombarded surfaces where the particles have much higher energies, lower incidence angle and ripple formation is mainly due to physical deformation of the surface. We investigate the ripple formation process in our simulated surfaces for a wide range of etching angle and sticking coefficient values.

Effects of Ion Beam Milling on Surface Topography

1973 ◽  
Vol 31 ◽  
pp. 84-85
Author(s):  
P.G. Pawar ◽  
P. Duhamel ◽  
G.W. Monk
Keyword(s):  
Surface Topography ◽  
Ion Beam ◽  
Solid Material ◽  
Beam Current ◽  
Atomic Mass ◽  
Micro Milling ◽  
Ion Milling ◽  
Controlled Atmospheres ◽  
Milling Operations ◽  
Sufficient Energy

A beam of ions of mass greater than a few atomic mass units and with sufficient energy can remove atoms from the surface of a solid material at a useful rate. A system used to achieve this purpose under controlled atmospheres is called an ion miliing machine. An ion milling apparatus presently available as IMMI-III with a IMMIAC was used in this investigation. Unless otherwise stated, all the micro milling operations were done with Ar+ at 6kv using a beam current of 100 μA for each of the two guns, with a specimen tilt of 15° from the horizontal plane.It is fairly well established that ion bombardment of the surface of homogeneous materials can produce surface topography which resembles geological erosional features.

Atomic force microscopy (AFM) of the topography of silicon surfaces exposed to ion beams

1992 ◽  
Vol 50 (2) ◽  
pp. 1132-1133
Author(s):  
Mark Denker ◽  
Jennifer Wall ◽  
Mark Ray ◽  
Richard Linton
Keyword(s):  
Secondary Ion Mass Spectrometry ◽  
Incidence Angle ◽  
Ion Beam ◽  
Depth Profiling ◽  
Depth Resolution ◽  
Ion Beams ◽  
Scanning Tunneling ◽  
Tunneling Microscopy ◽  
Trace Impurities ◽  
Energy Dose

Reactive ion beams such as O2+ and Cs+ are used in Secondary Ion Mass Spectrometry (SIMS) to analyze solids for trace impurities. Primary beam properties such as energy, dose, and incidence angle can be systematically varied to optimize depth resolution versus sensitivity tradeoffs for a given SIMS depth profiling application. However, it is generally observed that the sputtering process causes surface roughening, typically represented by nanometer-sized features such as cones, pits, pyramids, and ripples. A roughened surface will degrade the depth resolution of the SIMS data. The purpose of this study is to examine the relationship of the roughness of the surface to the primary ion beam energy, dose, and incidence angle. AFM offers the ability to quantitatively probe this surface roughness. For the initial investigations, the sample chosen was <100> silicon, and the ion beam was O2+.Work to date by other researchers typically employed Scanning Tunneling Microscopy (STM) to probe the surface topography.

Sign in / Sign up

Export Citation Format

Share Document