Aluminium-Transition Metal Thin-Film Reactions

1988 ◽  
Vol 119 ◽  
Author(s):  
E. G. Colgan ◽  
J. W. Mayer

AbstractA systematic study of Al/metal reactions has been performed. The thin-film interactions of Al with refractory metals (Ti, V, Ta, Cr, Mo, W and Co) and near-noble metals (Ni, Pd, and Pt) have been investigated. The initial aluminide phases to grow are the Al-rich phases: TiAl3, Val3, TaAl3, Cr2Al13, MoAl12, Wal12, Co2Al9, NiAl3, Pd2Al3, and Pt2Al3 at temperatures between 225 and 525°C. With the exceptions of Val3, Pd2Al3, and Pt2Al3. these are the most Al-rich phases on the phase diagrams. Marker experiments were performed and Al was the dominant diffusing species during the growth of these phases, TiAl3, Val3, Cr2Al3, MoAl12, Co2Al2, NiAl3, Pd2Al3, and Pt2AI3. Consistent with the faster Al diffusion, which provides a greater supply of Al to the growing interface, is the growth of the most Al-rich phase initially. For the exceptions to this rule, Val3, Pd2AI3, and Pt2 Al3, the complexity of the Al-rich V, Pd, and Pt end phases may have hindered nucleation, resulting in the growth of the observed phases. The subsequent phase formation was examined in the Ni-, Pd-, and Pt-Al systems. After initial phase formation consumed all the Al or metal, subsequent phases formed in accordance with the overall stoichiometry. The results of this study, along with a brief literature review, are presented and the generalized behavior of Al/transition metal reactions discussed.

Nanoscale ◽  
2021 ◽  
Author(s):  
Qiang Yu ◽  
Shun Wang ◽  
Yan Zhang ◽  
Zhuo Dong ◽  
Haiqin Deng ◽  
...  

Tantalum disulfide (TaS2), an emerging group VB transition metal dichalcogenide, with unique layered structure, rich phase diagrams, semimetallic behavior, higher carrier concentration and mobility is emerging as a prototype for...


1985 ◽  
Vol 58 (11) ◽  
pp. 4125-4129 ◽  
Author(s):  
E. G. Colgan ◽  
M. Nastasi ◽  
J. W. Mayer

1983 ◽  
Vol 25 ◽  
Author(s):  
R. J. Nemanich ◽  
C. C. Tsai ◽  
B. L. Stafford ◽  
J. R. Abelson ◽  
T. W. Sigmon

ABSTRACTThe initial phase formation at the interface of the near noble metals (Ni, Pd, and Pt) and Si is studied by Raman spectroscopy and Rutherford ion-backscattering. The results show that a crystalline Pd2Si forms immediately at the interface of Pd and Si while a disordered intermixed phase of composition ∼M2Si forms for Ni and Pt at 150°C. The results are discussed in terms of the disorder due to the kinetic process and the stability of the crystalline phase.


1987 ◽  
Vol 2 (1) ◽  
pp. 28-34 ◽  
Author(s):  
E. G. Colgan ◽  
J. W. Mayer

The thin-film interactions of Au with Ti, Zr, V, and Nb have been investigated between 350C and 700°C with Rutherford backscattering spectroscopy (RBS) and x-ray diffraction (XRD). Initially the most Au-rich phase is formed, except. with V, and it is followed sequentially by the more metal-rich ones in an increasingly layer-by-layer fashion. For Au reactions on Ti and Nb, all the intermetallic phases on the phase diagrams were observed. In the formation of Au4Ti, Au is the dominant moving species.


2015 ◽  
Vol 62 (7) ◽  
pp. 2313-2319 ◽  
Author(s):  
Chuan Yu Han ◽  
Wing Man Tang ◽  
Cheung Hoi Leung ◽  
Chi-Ming Che ◽  
Peter T. Lai

Nanoscale ◽  
2021 ◽  
Author(s):  
Conor Patrick Cullen ◽  
Cormac Ó Coileáin ◽  
John B McManus ◽  
Oliver Hartwig ◽  
David McCloskey ◽  
...  

Group-10 transition metal dichalcogenides (TMDs) are rising in prominence within the highly innovative field of 2D materials. While PtS2 has been investigated for potential electronic applications, due to its high...


2019 ◽  
Vol 7 (9) ◽  
pp. 4971-4976 ◽  
Author(s):  
Tongtong Wang ◽  
Xiaosong Guo ◽  
Jingyan Zhang ◽  
Wen Xiao ◽  
Pinxian Xi ◽  
...  

We give a systematic study of the HER catalytic activity of transition metal doped NiS2 by first principles calculations and experiments.


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