Kinetics, Microstructure And Mechanisms of Ion Beam Induced Epitaxial Crystallization of Semiconductors.

1985 ◽  
Vol 51 ◽  
Author(s):  
R.G. Elliman ◽  
J.S. Williams ◽  
D.M. Maher ◽  
W.L. Brown
Keyword(s):  
Activation Energy ◽  
Simple Model ◽  
Epitaxial Growth ◽  
Ion Beam ◽  
The Other ◽  
Thermally Induced ◽  
Substrate Orientation ◽  
Epitaxial Crystallization ◽  
Temperature Range ◽  
Other Hand

ABSTRACTIon-beam induced epitaxy is shown to be essentially athermal over the temperature range 200-400°C, and to exhibit no dependence on substrate orientation and little dependence on doping in this regime. On the other hand, the formation and propagation of defects during growth and the interaction of the advancing crystal-amorphous interface with implanted impurities is essentially identical for both thermally induced and ion-beam induced epitaxy. These observations lead to a simple model for ion-beam induced epitaxial crystallization in which epitaxial growth is nucleated by defects generated at, or near, the crystal-amorphous interface by the ion beam. Comparisons of ion-beam induced epitaxy and thermally induced epitaxy suggest that the 2.7 eV activation energy associated with the latter process is dominated by a 2.0 eV nucleation step.

Segregation of Ag and Cu During Ion Beam and Thermally Induced Recrystallization of Amorphous Si

1988 ◽  
Vol 128 ◽  
Author(s):  
J. S. Custer ◽  
Michael O. Thompson ◽  
J. M. Poatet
Keyword(s):  
Simple Model ◽  
Low Temperature ◽  
Ion Beam ◽  
Critical Concentration ◽  
Thermally Induced ◽  
Epitaxial Crystallization ◽  
Amorphous Si ◽  
Crystal Region

ABSTRACTThe segregation of Ag and Cu impurities in amorphous Si during both thermal and ion beam induced epitaxial crystallization has been studied. During thermal regrowth at 550°C, both Ag and Cu are initially trapped at increasing concentration in the shrinking a-Si layer. At a critical concentration, though, regrowth becomes non-planar and the impurities are no longer entirely trapped in the a-Si. Above 0.08 at% and 0.15 at% respectively, the excess impurity is lost to the crystal region and diffuses rapidly away from the interface. Under low temperature (200 - 400°C) epitaxy induced by a 2.5 MeV Ar+ beam, segregation and trapping are initially observed. As regrowth proceeds, however, the segregation no longer follows the simple model

Stratigraphic biases in the analysis of taxonomic survivorship

Paleobiology ◽  
1975 ◽  
Vol 1 (4) ◽  
pp. 343-355 ◽  
Author(s):  
J. John Sepkoski
Keyword(s):  
Simple Model ◽  
Lognormal Distribution ◽  
Fossil Record ◽  
The Other ◽  
Time Intervals ◽  
Survivorship Analysis ◽  
Other Hand ◽  
Incomplete Sampling ◽  
Biologic Factors

Taxonomic survivorship curves may reflect stratigraphic as well as biologic factors. The approximately lognormal distribution of lengths of Phanerozoic time intervals produces an error in the estimation of taxonomic durations that is also lognormally distributed. As demonstrated by several simulated examples, this error may cause concave taxonomic survivorship curves to appear linear, especially if the maximum durations involved are relatively short. The error of estimation also makes highly concave taxonomic survivorship curves virtually unrecognizable. Incomplete sampling of the fossil record, on the other hand, may not be a serious problem in survivorship analysis. Simulated paleontological sampling employing a simple model suggests that survivorship curves tend to retain their original shapes even when as few as 20% of the taxa have been discovered. However, concave taxonomic survivorship curves tend to lose their concavity as efficiency of sampling declines.

On the Legal and Illegal Behavior of the Regulated Firm

1986 ◽  
Vol 14 (4) ◽  
pp. 431-447
Author(s):  
Lawrence Martin
Keyword(s):  
Simple Model ◽  
Optimal Choice ◽  
Price Regulation ◽  
The Other ◽  
Production Plan ◽  
Illegal Activity ◽  
The Real ◽  
Illegal Behavior ◽  
Other Hand ◽  
Regulated Firm

This article develops a simple model of a firm's privately optimal choice of the degree to which it will abide with regulations. The model allows for the firm to disguise its illegal actions in order to avoid detection and to expend resources to mitigate possible punishment for violations. Both price and quantity type regulatory schemes are considered. Under quantity regulation noncompliance increases the total amount of the regulated activity and distorts efficiency in production. Price regulation, on the other hand, introduces a kind of dichotomy between the real production plan of the firm and its illegal activity. Even though price regulations are substantially evaded, the total amount of the regulated activity remains unchanged, and the firm continues to produce efficiently.

Reduction of binary sulfate mixtures containing CuSO4 by H2

1976 ◽  
Vol 54 (23) ◽  
pp. 3651-3657 ◽  
Author(s):  
Fathi Habashi ◽  
Shaheer A. Mikhail
Keyword(s):  
Intermediate Product ◽  
The Other ◽  
Temperature Range ◽  
Other Hand ◽  
First Case ◽  
Limited Temperature ◽  
Limited Temperature Range ◽  
The Individual

The reduction of a binary sulfate mixture cannot be predicted from the behavior of the individual components. Thus, while CuSO4 is reduced to Cu at 400 °C and NiSO4 is reduced to Ni3S2, the sulfate mixture yields Cu, Ni3S2, and Cu2S. Also while FeSO4 is completely stable in H2 at 400 °C, (Cu,Fe) SO4 yields Cu and Cu5FeS4. The formation of Cu2S in the first case and Cu5FeS4 in the second was unexpected. On the other hand, (Cu,Mn)SO4 is stable in H2 up to 550 °C although pure CuSO4 is completely reduced at 400 °C. CoSO4 also interferes when reduced in presence of CuSO4, while Na2SO4, MgSO4, Al2(SO4)3, ZnSO4, CdSO4 do not interfere within limited temperature range. Of these only Na2SO4 forms a complex sulfate with CuSO4. No Cu2SO4 was identified when CuSO4 was reduced in presence of other sulfates although it is an intermediate product during the reduction of pure CuSO4.

FERROMAGNETIC TDAE-C60 VERSUS PARAMAGNETIC TDAE-C70: FARADEY BALANCE AND ESR STUDY

1992 ◽  
Vol 06 (23n24) ◽  
pp. 3953-3958 ◽  
Author(s):  
Kazuyoshi Tanaka ◽  
Anvar A. Zakhidov ◽  
Kazunari Yoshizawa ◽  
Kenji Okahara ◽  
Tokio Yamabe ◽  
...  
Keyword(s):  
Magnetic Properties ◽  
Electron Spin Resonance ◽  
Electron Spin ◽  
Fullerene Molecule ◽  
The Other ◽  
Temperature Range ◽  
Type Transition ◽  
Other Hand ◽  
Spin Resonance ◽  
Ordered State

Magnetic properties of C 60 and C 70 complexes with tetrakis(dimethylamino)ethylene (TDAE) have been studied based on the measurements of the Faraday-balance magnetization and the electron spin resonance (ESR). It has been found that both TDAE- C 60 and TDAE- C 70 possess about one radical spin per fullerene molecule. TDAE- C 60 has been confirmed to show ferromagnetic-type transition at Tc=16.7–17.5 K . Appearance of a new broad and intense ESR signal below Tc of TDAE- C 60 suggests that the radical spins in the magnetically ordered state rather localize on each C 60 molecule and are ferromagnetically correlated. On the other hand, TDAE- C 70 does not show ferromagnetism in all the temperature range down to 4.5K.

Carboxy Nitroso Rubber, Chemistry, Properties, and Applications

1971 ◽  
Vol 44 (1) ◽  
pp. 40-51 ◽  
Author(s):  
N. B. Levine
Keyword(s):  
The Other ◽  
Temperature Range ◽  
Other Hand

Abstract The nitroso copolymer shows excellent promise which has not been realized due to a lack of ability to achieve a suitable cure. The CNR terpolymer, on the other hand, retains the excellent solvent and oxidizer resistance, nonflammability, and wide useful temperature range of the copolymer and can, in addition, be easily fabricated and cured by several techniques into many useful products.

Role of Cl/Si Ratio in the Low-Temperature Chloro-Carbon Epitaxial Growth of SiC

2013 ◽  
Vol 740-742 ◽  
pp. 205-208
Author(s):  
Galyna Melnychuk ◽  
Siva Prasad Kotamraju ◽  
Yaroslav Koshka
Keyword(s):  
Growth Rate ◽  
Low Temperature ◽  
Epitaxial Growth ◽  
Growth Process ◽  
Growth Conditions ◽  
The Other ◽  
Additional Increase ◽  
Other Hand

In order to understand the influence of the Cl/Si ratio on the morphology of the low-temperature chloro-carbon epitaxial growth, HCl was added during the SiCl4/CH3Cl growth at 1300°C. Use of higher Cl/Si ratio allowed only modest improvements of the growth rate without morphology degradation, which did not go far beyond what has been achieved previously by optimizing the value of the input C/Si ratio. On the other hand, when the epitaxial growth process operated at too low or too high values of the input C/Si ratio, i.e., outside of the window of good epilayer morphology, any additional increase of the Cl/Si ratio caused improvement of the epilayer morphology. It was established that this improvement was due to a change of the effective C/Si ratio towards its intermediate values, which corresponded to more favorable growth conditions.

scholarly journals Effect of temperature on growth of Pseudomonas protegens Pf-5 and Pseudomonas aeruginosa PRD-10 in LB Lennox medium

2018 ◽  
Author(s):  
Wenfa Ng
Keyword(s):  
Pseudomonas Aeruginosa ◽  
Optical Density ◽  
The Other ◽  
Temperature Adaptation ◽  
Effect Of Temperature ◽  
Metabolic Processes ◽  
Two Phase ◽  
Ph Variation ◽  
Temperature Range ◽  
Other Hand

Temperature affects growth of bacteria by influencing enzyme and growth kinetics. Specifically, evolution selects for specific temperature range in which a microbe could thrive, and thus fix the temperature range in which biomolecule structure and function are finely tuned for coping with the thermal conditions prevailing within a cell at a particular temperature. Using aerobic culture in LB Lennox medium in shake flasks, this study aimed to understand the growth of Pseudomonas protegens Pf-5 (ATCC BAA-477) and Pseudomonas aeruginosa PRD-10 (ATCC 15442) at 25, 30 and 37 oC. Experiment results revealed that P. protegens Pf-5 grew very poorly at 37 oC (with maximal optical density of 0.66), while better growth was observed at 25 and 30 oC. Specifically, P. protegens Pf-5 appeared to be better adapted to growth at 25 oC, where the maximal optical density obtained was 5.3 compared to 4.6 at 30 oC. More importantly, two phase growth behaviour was observed during growth at 30 oC where a faster initial phase of growth was followed by a slower one. Growth at 25 and 30 oC exhibited similar pH trend, which suggested similar metabolic processes was activated during growth. On the other hand, P. aeruginosa PRD-10 demonstrated a more efficient conversion of LB Lennox medium into biomass where the maximal optical density obtained at all three growth temperatures were higher than those of P. protegens Pf-5. More importantly, growth of P. aeruginosa PRD-10 exhibited a clear adaptation to growth at 25 and 37 oC, while growth at 30 oC resulted in a lower biomass yield compared to that of 25 and 37 oC. On the other hand, pH variation during culture revealed that P. aeruginosa PRD-10 likely activated similar metabolic processes at all three growth temperatures, where a higher growth temperature would result in the net secretion of more alkaline metabolites. Collectively, P. protegens Pf-5 and P. aeruginosa PRD-10 demonstrated clear temperature adaptation at an evolutionary level. In addition, experiment data suggested that P. aeruginosa PRD-10 might have co-evolved with humans on a substantial time scale resulting in a temperature preference of 37 oC over 30 oC.

Differential Enthalpies of Solution of Components in Binary Systems 2 CaO . Al2O3 . SiO2-CaO . Al2O3 . 2 SiO2, CaO . SiO2-CaO . Al2O3 . 2 SiO2 and CaO . SiO2-2 CaO . Al2O3 . SiO2

1993 ◽  
Vol 58 (9) ◽  
pp. 1989-1996 ◽  
Author(s):  
Ladislav Kosa ◽  
Ivan Nerád ◽  
Jozef Strečko ◽  
Ivo Proks ◽  
Katarína Adamkovičová
Keyword(s):  
Binary Systems ◽  
The Other ◽  
Enthalpies Of Solution ◽  
Heat Of Solution ◽  
Differential Heat ◽  
Temperature Range ◽  
Enthalpies Of Mixing ◽  
Other Hand ◽  
Temperature Dependences

Differential enthalpies of solution of components in binary systems 2 CaO . Al2O3 . SiO2-CaO . Al2O3 . 2 SiO2, CaO . SiO2-CaO . Al2O3 . 2 SiO2 and CaO . SiO2-2 CaO . Al2O3 . SiO2 as the function of composition and temperature were determined on the base of isothermal composition dependences of enthalpies of mixing and temperature dependences of heats of fusion of their pure components. From the values of the first differential heat of solution of CaO . Al2O3 . 2 SiO2 and 2 CaO . Al2O3 . SiO2 in CaO . SiO2 over temperature range considered we can conclude that the reactions were closed chains of SiO4 tetrahedra in CaO . SiO2 melt break, are exothermic. On the other hand positive values of this quantity for CaO . SiO2 in CaO . Al2O3 . 2 SiO2 and 2 CaO . Al2O3 . SiO2 led us to the conclusion that the progressive breaking originally closed chains in CaO . SiO2 melt has endothermic character.

Interactions of LO Phonons with Bound Excitons in Homoepitaxial GaN

1997 ◽  
Vol 482 ◽  
Author(s):  
K. P. Koron ◽  
A. Wysmolek ◽  
J. M. Baranowskil ◽  
K. Pakul ◽  
J. P. Bergman ◽  
...  
Keyword(s):  
Temperature Dependence ◽  
The Other ◽  
Direct Influence ◽  
Neutral Donor ◽  
Phonon Replica ◽  
Temperature Range ◽  
Other Hand ◽  
Order Of Magnitude ◽  
Neutral Acceptor

AbstractPhotoluminescence connected with excitons and their phonon replicas in undoped homoepitaxial MOCVD grown GaN layers have been studied in the temperature range 2 - 100 K. It is shown that the coupling between LO phonons and neutral acceptor bound excitons (ABE) is much stronger than the coupling between LO phonons and neutral donor bound excitons (DBE). In spite that emission due the DBE no-phonon is one order of magnitude stronger than the ABE one, the predominant feature of the first LO phonon replica of the excitonic structures is related to the ABE. It is argued that this fact is connected with delocalization of the acceptor wavefunction in the k-space which leads to a higher number of interacting LO phonons in the first replica. On the other hand, the second LO phonon replica of the excitonic structures is predominantly connected with the DBE. In the case of two LO phonons interacting with bound excitons the k - conservation has not so direct influence. In addition, the temperature dependence of LO phonon replicas and their kinetics in ps regime are also reported.

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