Heteroepitaxial Growth of High Quality GaAs Films on Rapid-Thermal-anealing Processed CaF2/Si(511) Structures

1988 ◽  
Vol 144 ◽  
Author(s):  
Tanemasa Asano ◽  
Hiroshi Ishiwara ◽  
Seijiro Furukawa
Keyword(s):  
Electron Microscopy ◽  
Molecular Beam ◽  
Crystalline Quality ◽  
Heteroepitaxial Growth ◽  
High Quality ◽  
Ion Channeling ◽  
Surface Steps ◽  
Transmission Electron ◽  
Good Crystalline Quality ◽  
Gaas Films

ABSTRACTHeteroepitaxial growth of CaF2 films on (511)Si and GaAs films on CaF2/Si(511) structures is investigated. CaF2 films and GaAs films are grown by vacuum evaporation and molecular beam epitaxy, respectively. Ion channeling measurements and replica transmission electron microscopy show that CaF2 films having good crystalline quality and surface steps can be formed by annealing at 900°C for 30 sec after the growth at 550° C. GaAs films having smooth surfaces and good crystalline quality can be grown on the annealed CaF2/Si(511) structures.

scholarly journals Epitaxial Growth of Ordered In-Plane Si and Ge Nanowires on Si (001)

Nanomaterials ◽  
2021 ◽  
Vol 11 (3) ◽  
pp. 788
Author(s):  
Jian-Huan Wang ◽  
Ting Wang ◽  
Jian-Jun Zhang
Keyword(s):  
Electron Microscopy ◽  
Epitaxial Growth ◽  
Molecular Beam ◽  
Core Shell ◽  
High Quality ◽  
Quantum Devices ◽  
Wafer Scale ◽  
Transmission Electron ◽  
Controllable Growth

Controllable growth of wafer-scale in-plane nanowires (NWs) is a prerequisite for achieving addressable and scalable NW-based quantum devices. Here, by introducing molecular beam epitaxy on patterned Si structures, we demonstrate the wafer-scale epitaxial growth of site-controlled in-plane Si, SiGe, and Ge/Si core/shell NW arrays on Si (001) substrate. The epitaxially grown Si, SiGe, and Ge/Si core/shell NW are highly homogeneous with well-defined facets. Suspended Si NWs with four {111} facets and a side width of about 25 nm are observed. Characterizations including high resolution transmission electron microscopy (HRTEM) confirm the high quality of these epitaxial NWs.

Characterization and Growth Mechanism of B12As2 Epitaxial Layers Grown on (1-100) 15R-SiC

2008 ◽  
Vol 1069 ◽  
Author(s):  
Hui Chen ◽  
Guan Wang ◽  
Michael Dudley ◽  
Zhou Xu ◽  
James. H. Edgar ◽  
...  
Keyword(s):  
Electron Microscopy ◽  
Transmission Electron Microscopy ◽  
High Resolution ◽  
Growth Mechanism ◽  
Heteroepitaxial Growth ◽  
High Quality ◽  
X Ray ◽  
Transmission Electron ◽  
Substrate Choice

ABSTRACTA systematic study is presented of the heteroepitaxial growth of B12As2 on m-plane 15R-SiC. In contrast to previous studies of B12As2 on other substrates, including (100) Si, (110) Si, (111) Si and (0001) 6H-SiC, single crystalline and untwinned B12As2 was achieved on m-plane 15R-SiC. Observations of IBA on m-plane (1100)15R-SiC by synchrotron white beam x-ray topography (SWBXT) and high resolution transmission electron microscopy (HRTEM) confirm the good quality of the films on the 15R-SiC substrates. The growth mechanism of IBA on m-plane 15R-SiC is discussed. This work demonstrates that m-plane 15R-SiC is potentially a good substrate choice to grow high quality B12As2 epilayers.

Low-Temperature Si (111) Homoepitaxy and Doping Mediated by a Monolayer of Pb

1999 ◽  
Vol 570 ◽  
Author(s):  
O.D. Dubon ◽  
P.G. Evans ◽  
J.F. Chervinsky ◽  
F. Spaepen ◽  
M.J. Aziz ◽  
...  
Keyword(s):  
Molecular Beam ◽  
Film Surface ◽  
High Quality ◽  
Ion Channeling ◽  
Promising Strategy ◽  
Transmission Electron ◽  
Crystalline Films ◽  
Si Epitaxy ◽  
Deposited Films ◽  
Film Interface

ABSTRACTThe codeposition of Pb during Si (111) molecular beam homoepitaxy leads to high-quality crystalline films at temperatures for which films deposited on bare Si (111) are amorphous. Like other growth mediating elements-- commonly called surfactants-- Pb segregates to the film surface. Ion channeling and transmission electron microscopy reveal nearly defect-free epitaxy for a Pb coverage of one monolayer and temperatures as low as 310 °C. We have deposited films up to 1000 Å in thickness with no indication that this is an upper limit for high-quality epitaxy. However, a decrease in the Pb coverage during growth by only one tenth of a monolayer leads to highly defective films at these temperatures. The codeposition of both As and Pb results in a striking enhancement of the film quality as well. In this case, while the Pb again segregates to the film surface, the As is incorporated into the film with no apparent segregation. Lead-mediated Si epitaxy on As-terminated Si (111) produces high-quality films in which the As remains buried at the substrate-film interface. These results show Pb-mediated Si (111) homoepitaxy to be a promising strategy for the synthesis of layered structures having abrupt nanoscale dopant profiles

Strain-Field Induced Crosshatch Formation During Molecular Beam Epitaxy of InGaAs/GaAs Films

1993 ◽  
Vol 312 ◽  
Author(s):  
X. C. Zhou ◽  
J. Jiang ◽  
A. Y. Du ◽  
J. W. Zhao ◽  
S. M. Mu ◽  
...  
Keyword(s):  
Electron Microscopy ◽  
Molecular Beam Epitaxy ◽  
Molecular Beam ◽  
Direct Evidence ◽  
Surface Strain ◽  
Misfit Dislocations ◽  
Strain Fields ◽  
Transmission Electron ◽  
Gaas Films ◽  
Reflection Electron Microscopy

AbstractUsing reflection electron microscopy (REM), transmission electron microscopy (TEM), and Nomarski optical microscopy we obtained direct evidence that local surface strain-fields, originated from misfit dislocations, are responsible for the formation of morphological crosshatches during molecular beam epitaxy of lattice mismatched InGaAs/GaAs layers. A mechanism is proposed to correlate the formation of the crosshatched patterns with the variation of the growth rate across the epitaxial surface under the perturbation of network shaped strain-fields in the surface.

Influence of Antimony Doping on Nanoscale Arsenic Clusters and Dislocation Loops in Low-Temperature Grown Gallium Arsenide Films

2000 ◽  
Vol 652 ◽  
Author(s):  
V.V. Chaldyshev ◽  
N.A. Bert ◽  
A.E. Romanov ◽  
A.A. Suvorova ◽  
A.L. Kolesnikova ◽  
...  
Keyword(s):  
Electron Microscopy ◽  
Low Temperature ◽  
Molecular Beam ◽  
Dislocation Loops ◽  
Gaas Matrix ◽  
Transmission Electron ◽  
Antimony Doping ◽  
Gaas Films ◽  
Sb Doping ◽  
Ripening Rate

ABSTRACTTransmission electron microscopy was employed to study the microstructure of GaAs films grown by molecular-beam epitaxy at low temperature and delta-doped with Sb. Thus obtained material contained 0.5 at.% of excess arsenic that precipitates upon post-growth anneals. The Sb doping was found to strongly affect the microstructure of arsenic clusters and their ripening rate upon annealing. Segregation of Sb impurities in the As clusters was revealed. In contrast to the well known pure As clusters, the As-Sb clusters induced strong local deformations in the surrounding GaAs matrix. Relaxation of these deformations resulted in formation of dislocation loops, which was studied both experimentally and theoretically.

Misfit Dislocations at Mismatched Epitactic Heterojunctions

1990 ◽  
Vol 198 ◽  
Author(s):  
Jane G. Zhu ◽  
C. Barry Carter ◽  
Chris J. Palmstrom
Keyword(s):  
Electron Microscopy ◽  
Transmission Electron Microscopy ◽  
Molecular Beam Epitaxy ◽  
Molecular Beam ◽  
Antiphase Boundary ◽  
Misfit Dislocations ◽  
Surface Steps ◽  
Transmission Electron ◽  
Different Types ◽  
Significant Factors

ABSTRACTThe formation and structures of misfit dislocations are significant factors in understanding heteroepitaxy of lattice-mismatched materials. In this study, GaAs/Si, CoGa/GaAs and ErAs/GaAs heterojunctions in materials grown by molecular-beam epitaxy have been characterized using transmission electron microscopy. Different types of misfit dislocations have been generated at these interfaces. The different dislocation configurations are discussed, along with interactions between 60° and 90° dislocations in GaAs/Si heterojunctions; the 60° dislocations might be associated with surface steps or edges of islands. The growth of antiphase boundary structures in the CoGa and ErAs grown on GaAs are proposed.

Tin-Doping Induced Defects in GaAs Films Grown by Molecular Beam Epitaxy

1984 ◽  
Vol 41 ◽  
Author(s):  
S. H. Chen ◽  
P. Enquist ◽  
C. B. Carter
Keyword(s):  
Electron Microscopy ◽  
Transmission Electron Microscopy ◽  
Molecular Beam Epitaxy ◽  
Molecular Beam ◽  
Surface Region ◽  
Growth Conditions ◽  
Near Surface ◽  
Transmission Electron ◽  
Gaas Films ◽  
Induced Defects

AbstractHeavily Sn-doped GaAs films have been grown by molecular-beam epitaxy and found to contain single-crystal Sn particles situated in the near-surface region of the epilayer GaAs. The morphology and chemical composition of the particles have been examined by using cross-section transmission electron microscopy combined with energy-dispersive x-ray spectroscopy. Different growth conditions were used to study the Sn-particle formation and high-resolution transmission electron microscopy was used to investigate microstructures. The observations are discussed in terms of several models previously proposed for these phenomena.

CHARACTERIZATION AND ELECTRICAL PROPERTIES OF ALIGNED CARBON NANOTUBES WITH HIGH ASPECT RATIO

2011 ◽  
Vol 10 (01n02) ◽  
pp. 23-28
Author(s):  
RAVI BHATIA ◽  
V. PRASAD ◽  
M. REGHU
Keyword(s):  
Electron Microscopy ◽  
Carbon Nanotubes ◽  
Aspect Ratio ◽  
Multiwall Carbon Nanotubes ◽  
High Quality ◽  
Transmission Electron Microscopy Analysis ◽  
Transmission Electron ◽  
Electron Microscopy Analysis ◽  
High Degree

High-quality multiwall carbon nanotubes (MWNTs) were produced by a simple one-step technique. The production of MWNTs was based on thermal decomposition of the mixture of a liquid phase organic compound and ferrocene. High degree of alignment was noticed by scanning electron microscopy. The aspect ratio of as-synthesized MWNTs was quite high (more than 4500). Transmission electron microscopy analysis showed the presence of the catalytic iron nanorods at various lengths of MWNTs. Raman spectroscopy was used to know the quality of MWNTs. The ratio of intensity of the G-peak to the D-peak was very high which revealed high quality of MWNTs. Magnetotransport studies were carried out at low temperature and a negative MR was noticed.

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