High Quality Epitaxial Growth on in-Situ Patterned Inp Substrates

AbstractWe demonstrate a vacuum lithography process which uses a finely focused Ga ion beam to write the pattern which is then transferred to the InP pattern by low energy dry etching. Surface steps on the order of 1000-2000A in height, and lateral resolution limited only by size of the ion beam, can be efficiently prepared using moderate Ga ion fluences. The surfaces prepared by this process are damage free and suitable for epitaxial overgrowth. GaInAs/InP heterostructures grown on in-situ patterned substrates show excellent morphology and high luminescence efficiency.

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Direct Observations of the Epitaxial Growth of Sputtered Ag on Si

Proceedings, annual meeting, Electron Microscopy Society of America ◽

10.1017/s0424820100071053 ◽

1973 ◽

Vol 31 ◽

pp. 122-123

Author(s):

J. S. Maa ◽

Thos. E. Hutchinson

Keyword(s):

Epitaxial Growth ◽

Film Growth ◽

Ion Beam ◽

Ion Beam Sputtering ◽

Microscopy Technique ◽

Direct Observations ◽

In Situ Electron Microscopy ◽

Beam Sputtering ◽

The Subject

The growth of Ag films deposited on various substrate materials such as MoS2, mica, graphite, and MgO has been investigated extensively using the in situ electron microscopy technique. The three stages of film growth, namely, the nucleation, growth of islands followed by liquid-like coalescence have been observed in both the vacuum vapor deposited and ion beam sputtered thin films. The mechanisms of nucleation and growth of silver films formed by ion beam sputtering on the (111) plane of silicon comprise the subject of this paper. A novel mode of epitaxial growth is observed to that seen previously.The experimental arrangement for the present study is the same as previous experiments, and the preparation procedure for obtaining thin silicon substrate is presented in a separate paper.

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Improving the quality of in situ lift-out FIB specimens: A comparison of low-energy argon broad and condensed ion beam milling

10.22443/rms.emc2020.937 ◽

2021 ◽

Author(s):

Michael Campin ◽

Keyword(s):

Ion Beam ◽

Low Energy

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Dynamics of Microstructure in the Early Stages of Ion Beam Assisted Film Growth

MRS Proceedings ◽

10.1557/proc-237-479 ◽

1991 ◽

Vol 237 ◽

Author(s):

Harry A. Atwater ◽

C. J. Tsai ◽

S. Nikzad ◽

M.V.R. Murty

Keyword(s):

Thin Films ◽

Epitaxial Growth ◽

Recent Progress ◽

Film Growth ◽

Ion Beam ◽

Surface Interactions ◽

Low Energy ◽

Early Stages ◽

Semiconductor Thin Films ◽

Nucleation Mechanisms

ABSTRACTRecent progress in low energy ion-surface interactions, and the early stages of ion-assisted epitaxy of semiconductor thin films is described. Advances in three areas are discussed: dynamics of displacements and defect incorporation, nucleation mechanisms, and the use of ion bombardment to modify epitaxial growth kinetics in atrulysurface-selective manner.

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Study of scalable IBS nanopatterning mechanisms for III-V semiconductors using in-situ surface characterization

MRS Proceedings ◽

10.1557/opl.2011.1458 ◽

2011 ◽

Vol 1354 ◽

Cited By ~ 1

Author(s):

Jean Paul Allain ◽

Osman El-Atwani ◽

Alex Cimaroli ◽

Daniel L. Rokusek ◽

Sami Ortoleva ◽

...

Keyword(s):

Surface Chemistry ◽

Surface Characterization ◽

Ion Irradiation ◽

Ion Beam ◽

Low Energy ◽

Self Organization ◽

Beam Parameter ◽

Ion Beam Sputtering

ABSTRACTIon-beam sputtering (IBS) has been studied as a means for scalable, mask-less nanopatterning of surfaces. Patterning at the nanoscale has been achieved for numerous types of materials including: semiconductors, metals and insulators. Although much work has been focused on tailoring nanopatterning by systematic ion-beam parameter manipulation, limited work has addressed elucidating on the underlying mechanisms for self-organization of multi-component surfaces. In particular there has been little attention to correlate the surface chemistry variation during ion irradiation with the evolution of surface morphology and nanoscale self-organization. Moreover the role of surface impurities on patterning is not well known and characterization during the time-scale of modification remains challenging. This work summarizes an in-situ approach to characterize the evolution of surface chemistry during irradiation and its correlation to surface nanopatterning for a variety of multi-components surfaces. The work highlights the importance and role of surface impurities in nanopatterning of a surface during low-energy ion irradiation. In particular, it shows the importance of irradiation-driven mechanisms in GaSb(100) nanopatterning by low-energy ions and how the study of these systems can be impacted by oxide formation.

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Chloride-Based CVD at High Rates of 4H-SiC on On-Axis Si-Face Substrates

Materials Science Forum ◽

10.4028/www.scientific.net/msf.679-680.59 ◽

2011 ◽

Vol 679-680 ◽

pp. 59-62 ◽

Cited By ~ 7

Author(s):

Stefano Leone ◽

Yuan Chih Lin ◽

Franziska Christine Beyer ◽

Sven Andersson ◽

Henrik Pedersen ◽

...

Keyword(s):

Epitaxial Growth ◽

Doping Concentration ◽

Epitaxial Layers ◽

Power Devices ◽

High Quality ◽

Homoepitaxial Growth ◽

Basal Plane Dislocation ◽

Background Doping ◽

Quality Material

The epitaxial growth at 100 µm/h on on-axis 4H-SiC substrates is demonstrated in this study. Chloride-based CVD, which has been shown to be a reliable process to grow SiC epitaxial layers at rates above 100 µm/h on off-cut substrates, was combined with silane in-situ etching. A proper tuning of C/Si and Cl/Si ratios and the combination of different chlorinated precursors resulted in the homoepitaxial growth of 4H-SiC on Si-face substrates at high rates. Methyltrichlorosilane, added with silane, ethylene and hydrogen chloride were employed as precursors to perform epitaxial growths resulting in very low background doping concentration and high quality material, which could be employed for power devices structure on basal-plane-dislocation-free epitaxial layers.

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