Evaluation of Anti-Phase-Boundaries in GaAs/Si Heterostructures by Transmission Electron Microscopy

1989 ◽  
Vol 148 ◽  
Author(s):  
O. Ueda ◽  
T. Soga ◽  
T. Jimbo ◽  
M. Umeno
Keyword(s):  
Electron Microscopy ◽  
Transmission Electron Microscopy ◽  
Three Dimensional ◽  
Buffer Layers ◽  
Phase Boundaries ◽  
Cross Sectional ◽  
Si Substrates ◽  
Transmission Electron ◽  
Strained Layer Superlattices ◽  
And Behavior

ABSTRACTThe nature and behavior of anti-phase-boundaries in GaAs/Si heterostructures using GaP, GaP/GaAsP and GaAsP/GaAs strained layer superlattices as intermediate buffer layers, have been investigated by transmission electron microscopy. It has been found that anti-phasedomains are very complicated three dimensional polygons consisting of several sub-boundaries in different orientations. Self-annihilation of anti-phase-domains during crystal growth of GaAs on (001)just or (001)2°off Si substrates is directly observed for the first time through planview and cross-sectional observations. Based on these findings, a mechanism of annihilation of these domains is proposed.

Direct Deposition Reactions Between Nickel and Silicon Substrates

1993 ◽  
Vol 311 ◽  
Author(s):  
Lin Zhang ◽  
Douglas G. Ivey
Keyword(s):  
Electron Microscopy ◽  
Transmission Electron Microscopy ◽  
Silicon Substrates ◽  
Silicide Formation ◽  
Cross Sectional ◽  
Deposition Rates ◽  
Plan View ◽  
X Ray ◽  
Si Substrates ◽  
Transmission Electron

ABSTRACTSilicide formation through deposition of Ni onto hot Si substrates has been investigated. Ni was deposited onto <100> oriented Si wafers, which were heated up to 300°C, by e-beam evaporation under a vacuum of <2x10-6 Torr. The deposition rates were varied from 0.1 nm/s to 6 nm/s. The samples were then examined by both cross sectional and plan view transmission electron microscopy (TEM), energy dispersive x-ray spectroscopy and electron diffraction. The experimental results are discussed in terms of a new kinetic model.

Enamel Crystal Shape: History of an Idea

1987 ◽  
Vol 1 (2) ◽  
pp. 322-329 ◽  
Author(s):  
H. Warshawsky
Keyword(s):  
Electron Microscopy ◽  
Transmission Electron Microscopy ◽  
Cross Sections ◽  
Three Dimensional ◽  
Unit Cell ◽  
Cross Sectional ◽  
Transmission Electron ◽  
History Of ◽  
Sectional Shape ◽  
Imaging Plane

The purpose of this paper is to review evidence which casts doubt on the interpretation universally applied to hexagonal images seen in sectioned enamel. The evidence is based on two possible models to explain the hexagonal profiles seen in mammalian enamel with transmission electron microscopy. The "hexagonal ribbon" model proposes that hexagonal profiles are true cross-sections of elongated hexagonal ribbons. The "rectangular ribbon" model proposes that hexagonal profiles are caused by three-dimensional segments that are parallelepipeds contained in the Epon section. Since shadow projections of such rectangular segments give angles that are inconsistent with the hexagonal unit cell, a model based on ribbons with rhomboidal cut ends and angles of 60 and 120° is proposed. The "rhomboidal ribbon" model projects shadows with angles that are predicted by the unit cell. It is suggested that segments of such crystallites in section project as opaque hexagons on the imaging plane in routine transmission electron microscopy. Morphological observations on crystallites in sections - together with predictions from the hexagonal, rectangular, and rhomboidal ribbon models - indicate that crystallites in rat incisor enamel are flat ribbons with rhomboidal cross-sectional shape. Hexagonal images in electron micrographs of thin-sectioned enamel can result from rhomboidal-ended, parallelepiped-shaped segments of these crystallites projected and viewed as two-dimensional shadows.

Nanomechanical Properties and Nanostructure of CMG and CMP Machined Si Substrates

2008 ◽  
Vol 381-382 ◽  
pp. 525-528 ◽  
Author(s):  
B.L. Wang ◽  
Han Huang ◽  
Jin Zou ◽  
Li Bo Zhou
Keyword(s):  
Electron Microscopy ◽  
Transmission Electron Microscopy ◽  
Substrate Surface ◽  
Transmission Electron Microscopy Analysis ◽  
Cross Sectional ◽  
Force Microscopy ◽  
Si Substrates ◽  
Atomic Force ◽  
Transmission Electron ◽  
Electron Microscopy Analysis

Silicon (100) substrates machined by chemo-mechanical-grinding (CMG) and chemicalmechanical- polishing (CMP) were investigated using atomic force microscopy, cross-sectional transmission electron microscopy and nanoindentation. It was found that the substrate surface after CMG was slightly better than machined by CMP in terms of roughness. The transmission electron microscopy analysis showed that the CMG-generated subsurface was defect-free, but the CMP specimen had a crystalline layer of about 4 nm in thickness on the top of the silicon lattice as evidenced by the extra diffraction spots. Nanoindentation results indicated that there exists a slight difference in mechanical properties between the CMG and CMP machined substrates.

scholarly journals Oblique Stacking of Three-Dimensional Dome Islands in Ge/Si Multilayers

2000 ◽  
Vol 648 ◽  
Author(s):  
P. Sutter ◽  
E. Sutter ◽  
L. Vescan
Keyword(s):  
Electron Microscopy ◽  
Transmission Electron Microscopy ◽  
Three Dimensional ◽  
Surface Curvature ◽  
Surface Strain ◽  
Complex Interplay ◽  
Cross Sectional ◽  
Transmission Electron ◽  
Planar Substrate ◽  
Inherent Tendency

AbstractThe organization of Ge ‘dome’ islands in Ge/Si multilayers has been investigated by cross-sectional transmission electron microscopy. Ge ‘domes’ are found to spontaneously arrange in oblique stacks, replicating at a well-defined angle from one bilayer to the next. The formation of oblique island stacks is governed by a complex interplay of surface strain - generated by the already buried islands - and surface curvature - caused by the inherent tendency of large ‘domes’ to carve out material from the surrounding planar substrate.

Cross-sectional Transmission Electron Microscopy of (AlAs)15(InAs)1 Superlattices

1990 ◽  
Vol 48 (4) ◽  
pp. 678-679
Author(s):  
C. Ballesteros ◽  
J. Piqueras ◽  
M. Vázquez ◽  
J.P. Silveira ◽  
L. González ◽  
...  
Keyword(s):  
Electron Microscopy ◽  
Transmission Electron Microscopy ◽  
Atomic Layer ◽  
Growth Conditions ◽  
Layer By Layer ◽  
High Quality ◽  
Cross Sectional ◽  
Strained Layer ◽  
Transmission Electron ◽  
Strained Layer Superlattices

Multibeam and bright field transmission electron microscopy are used to determine the structure of (InAs)1/(AlAs)15 superlattices. The interest of InAs/AlAs system arises from the large gap difference. The main problem in the obtention of strained layer superlattices (SLS), with a large lattice mismach, 7% is that of controlling the growth process to obtain high quality layers with sharp interfaces.A modification of the conventional MBE technique, Atomic Layer Molecular Beam Epitaxy (ALMBE) seems to be very appropiate for the growth of such strained layer structures. In particular, high quality layers of materials that demand different growth conditions by MBE, like InAs and AlAs can be obtained at a common low substrate temperature (350-400°) by ALMBE due to the ability to force 2D or layer by layer nucleation and growth. Present superlattices are part of a series with structure (AlAs)15/(InAs)n (n = 1, 2, 3 and 5 ml) whose study by HREM is under way in order to determine critical thickness limits.

The Mechanisms of Relaxation in Strained Layer GeSi/Si Superlattices: Diffusion Vs. Dislocation Formation

1987 ◽  
Vol 103 ◽  
Author(s):  
F. K. LeGoues ◽  
S. S. Iyer ◽  
K. N. Tu ◽  
S. L. Delage
Keyword(s):  
Electron Microscopy ◽  
Transmission Electron Microscopy ◽  
Cross Sectional ◽  
Strained Layer ◽  
Enhanced Diffusion ◽  
Transmission Electron ◽  
Through Diffusion ◽  
Strained Layer Superlattices ◽  
Plane View ◽  
Dislocation Formation

ABSTRACTSixGe1−x strained layer superlattices are known to be metastable in that they can be grown fully commensurate with layer thickness higher than the equilibrium, calculated Tc at which dislocation formation becomes energetically favorable. In this paper, we describe the mechanism of relaxation in such multilayers. Both plane-view and cross-sectional transmission electron microscopy (TEM) were used to examine the formation of dislocation at the different interfaces. RBS was used to follow interdiffusion. We found two competing mechanisms for relaxation: The preferred mode for relaxation is the creation of dislocation networks at each of the interfaces. This process can be stopped or considerably inhibited by the difficulty of forming new dislocations in samples which are perfectly commensurate after growth; Some dislocations appear necessary in order to generate more dislocations during annealing. When this is not the case, the only possible way to attain relaxation is through diffusion. In such a case, stress-enhanced diffusion is observed, with a diffusion coefficient 200 times higher than expected.

Structural Characterization of P-I-N Diode Superlattice Structures Grown on , , and Orientation Si Substrates

1991 ◽  
Vol 220 ◽  
Author(s):  
P. M. Adams ◽  
R. C. Bowman ◽  
V. Arbet-Engols ◽  
K. L. Wang ◽  
C. C. Ahn
Keyword(s):  
Electron Microscopy ◽  
X Ray Diffraction ◽  
Cross Sectional ◽  
Substrate Orientation ◽  
X Ray ◽  
Si Substrates ◽  
Transmission Electron ◽  
Superlattice Structures ◽  
Strained Layer Superlattices

ABSTRACTP-I-N diodes whose intrinsic region consists of strained layer superlattices (SLS), separated by 40 nm Si spacers, have been grown by MBE on Si substrates with <100>, <110>, and <111> orientations. These structures have been characterized by x-ray diffraction (XRD) and cross-sectional transmission electron microscopy (XTEM). The dual periodicities in these structures produced unique XRD effects and the quality was highly dependent on substrate orientation. The <100> sample was in general free of defects, whereas the <110> and <111> specimens contained significant numbers of twins and dislocations.

Different routes to the formation of C54 TiSi2 in the presence of surface and interface molybdenum: A transmission electron microscopy study

2002 ◽  
Vol 17 (4) ◽  
pp. 784-789 ◽  
Author(s):  
Z-B. Zhang ◽  
S-L. Zhang ◽  
D-Z. Zhu ◽  
H-J. Xu ◽  
Y. Chen
Keyword(s):  
Electron Microscopy ◽  
Transmission Electron Microscopy ◽  
Direct Evidence ◽  
Sample Surface ◽  
Microscopy Study ◽  
Electron Microscopy Study ◽  
Cross Sectional ◽  
Surface And Interface ◽  
Si Substrates ◽  
Transmission Electron

Direct evidence revealing fundamental differences in sequence of phase formation during the growth of TiSi2 in the presence of an ultrathin surface or interface Mo layer is presented. Results of cross-sectional transmission electron microscopy showed that when the Mo layer was present at the interface between Ti films and Si substrates, C40 (Mo,Ti)Si2 formed at the interface, and Ti5Si3 grew on top after annealing at 550 °C. Additionally, both C54 and C40 TiSi2 were found in the close vicinity of the C40 (Mo,Ti)Si2 grains. No C49 grains were detected. Raising the annealing temperature to 600 °C led to the formation of C54 TiSi2 at the expense of Ti5Si3, and the interfacial C40 (Mo,Ti)Si2 also began to transform into C54 (Mo,Ti)Si2 at 600 °C. When the Mo was deposited on top of Ti, the silicide film was almost solely composed of C49 TiSi2 at 600 °C. However, a small amount of (Mo,Ti)5Si3 was still present in the vicinity of the sample surface. Upon annealing at 650 °C, only the C54 phase was found throughout the entire TiSi2 layer with a surface (Mo,Ti)Si2 on top of TiSi2. Hence, it was unambiguously shown that in the presence of surface versus interface Mo, different routes were taken to the formation of C54 TiSi2.

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