Detailed Study of Ion Bombardment in Rf Glow Discharge Deposition Systems: The Role of Helium Dilution

1989 ◽  
Vol 149 ◽  
Author(s):  
P. Roca I Cabarrocas
Keyword(s):  
Glow Discharge ◽  
Effective Means ◽  
Ion Bombardment ◽  
Electrostatic Energy ◽  
Ion Energy ◽  
Capacitively Coupled ◽  
Ion Energy Distribution ◽  
Reactor Geometry ◽  
Rf Glow Discharge ◽  
Argon Dilution

ABSTRACTWe present a detailed study of the variables (reactor geometry, gas pressure, rf power and silane dilution) which control the flux and energy of the ions impinging on the substrate in capacitively-coupled rf glow discharge systems. The ion flux and ion energy, measured with an electrostatic energy analyzer, were found to be largely dependent on the reactor geometry, which was quantified by the ratio of the area of the grounded surfaces Sg to the area of the rf electrode Sc. Special attention was paid to the effects of the dilution of silane in hydrogen, helium and argon. Helium and hydrogen dilution were found the most effective means to increase ion bombardment while argon dilution has little effect on the ion energy distribution. Furthermore, it is likely that ion bombardment at moderate energy (Eion < 70 eV) does not induce any serious degradation of the electronic properties of a-Si:H films.

Deposition of organosilicon coatings from trimethylsilyl acetate and oxygen gases in capacitively coupled RF glow discharge

2020 ◽  
Vol 149 ◽  
pp. 105927
Author(s):  
Štěpánka Kelarová ◽  
Vojtěch Homola ◽  
Monika Stupavká ◽  
Martin Čermák ◽  
Jiří Vohánka ◽  
...  
Keyword(s):  
Glow Discharge ◽  
Capacitively Coupled ◽  
Rf Glow Discharge

Does ion Bombardment Induce a Degradation of the Electronic Properties of a-Si:H Films?

1990 ◽  
Vol 192 ◽  
Author(s):  
P. Roca i Cabarrocas ◽  
P. Morin ◽  
J. Conde ◽  
V. Chu ◽  
J.Z. Liu ◽  
...  
Keyword(s):  
Glow Discharge ◽  
Electronic Properties ◽  
Valence Band ◽  
Ion Bombardment ◽  
Clear Correlation ◽  
Negative Bias ◽  
Substrate Bias ◽  
Band Tail ◽  
Ion Energy

ABSTRACTWe present a detailed study of the effects of a negative bias applied to the substrate on the electronic properties of a-Si:H films deposited by r.f. glow discharge. Two series of samples deposited at 30 and 100 mTorr respectively have been studied. For each series the negative d.c. bias applied to the substrate was decreased from 0 to −100 V in steps of 25 V. We observe for both series of samples an improvement of the electronic properties of the films as we decrease the substrate bias (increase the ion energy) down to − 50 V. We have found a clear correlation between the negative bias applied to the substrate and the subgap absorption, the valence band tail slope and the electron and hole μτ products.

Light-Induced Degradation of Amorphous Silicon-Germanium Alloy Solar Cells Deposited at High Rates

1996 ◽  
Vol 420 ◽  
Author(s):  
S. Sugiyama ◽  
X. Xu ◽  
J. Yang ◽  
S. Guha
Keyword(s):  
Solar Cells ◽  
Glow Discharge ◽  
Amorphous Silicon ◽  
Silicon Germanium ◽  
Ion Bombardment ◽  
Ir Absorption ◽  
Film Properties ◽  
Deposition Rates ◽  
Rf Glow Discharge ◽  
Amorphous Silicon Germanium

AbstractWe have studied the light-induced degradation of amorphous silicon-germanium (a-SiGe:H) alloy single-junction solar cells with high initial performance deposited at high rates. The intrinsic layers were deposited using microwave (MW) glow-discharge technique at deposition rates between 10 and 40 Å/s. The results show that light-induced degradation of the cells is higher than that of cells deposited at low rates using RF glow-discharge technique, and it does not strongly depend on deposition rates over this range. The total hydrogen content and the ratio of Si-H2, Ge-H, and Ge-H2 to Si-H bonding estimated by infrared (IR) absorption in films are correlated with the cell degradation results. We have also investigated the effect of ionbombardment on film properties. Films with low ion-bombardment are more porous and have higher composition of Si-H2 and Ge-H2 bonding. Appropriate ion-bombardment makes denser structure in a-SiGe:H alloy films deposited at high rates. This improves the cell performance as well.

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