Bismuth Overlayer Formation on GaAs(110)

1989 ◽  
Vol 159 ◽  
Author(s):  
S.-L. Chang ◽  
T. Guo ◽  
W.K. Ford ◽  
A. Bowler ◽  
E.S. Hood
Keyword(s):  
Electron Diffraction ◽  
Long Range ◽  
Annealing Temperature ◽  
Profile Analysis ◽  
Low Energy ◽  
Sixth Order ◽  
Full Width ◽  
Low Energy Electron Diffraction ◽  
Low Energy Electron ◽  
Long Range Ordering

ABSTRACTThe temperature and coverage dependent ordering of bismuth overlayers on GaAs(110) is examined using low energy electron diffraction (LEED). Sixth order electron diffraction profiles associated with overlayer ordering are observed at coverages of 0.7, 1.0, and 1.5 monolayers (ML) and for temperatures ranging from -110 C to 200 C. The full-width at half-maxima (FWHM) of the sixth-order spots are examined. Profile analysis reveals narrowing widths with increasing annealing temperature, indicating an improvement of the long-range ordering of the overlayers. Differences in inter- and intrachain ordering are observed, analyzed, and discussed.

Growth of semiconductor layers studied by spot profile analysing low energy electron diffraction – Part I1

1999 ◽  
Vol 214 (10) ◽  
Author(s):  
M. Horn-von Hoegen
Keyword(s):  
Electron Diffraction ◽  
Surface Defects ◽  
Profile Analysis ◽  
Domain Size ◽  
Low Energy ◽  
Energy Electron ◽  
Vicinal Surfaces ◽  
Low Energy Electron Diffraction ◽  
Facet Orientation ◽  
Low Energy Electron

AbstractThe universal capabilities of high resolution spot profile analysis low energy electron diffraction for in situ studies of surface morphology and surface defects will be discussed and demonstrated. The position of the diffraction spots is used to determine lateral lattice constants, step heights and the strain state of heterosystems with a precision of 0.02 Å. With the knowledge of the spot profile we could determine island and domain size distributions – even during deposition – and correlation functions of arbitrary surface defects. The variation of the spot profile with electron energy allows the evaluation of the 3dim. reciprocal space. With this the power spectrum of surface roughness, facet orientation, or step morphology of flat and vicinal surfaces could be completely characterised.

scholarly journals Post deposition annealing of epitaxial Ce1−xPrxO2−δ films grown on Si(111)

2015 ◽  
Vol 17 (15) ◽  
pp. 9991-9996
Author(s):  
H. Wilkens ◽  
W. Spieß ◽  
M. H. Zoellner ◽  
G. Niu ◽  
T. Schroeder ◽  
...  
Keyword(s):  
Electron Diffraction ◽  
Profile Analysis ◽  
Morphological Changes ◽  
Low Energy ◽  
Energy Electron ◽  
Post Deposition Annealing ◽  
Low Energy Electron Diffraction ◽  
Low Energy Electron ◽  
Post Deposition

In this work the structural and morphological changes of Ce1−xPrxO2−δ (x = 0.20, 0.35 and 0.75) films grown on Si(111) due to post deposition annealing are investigated by low energy electron diffraction combined with a spot profile analysis.

EFFECT OF Cu DEPOSITION AND ANNEALING UPON A GaSe/Si(111) HETEROJUNCTION

1999 ◽  
Vol 06 (06) ◽  
pp. 1173-1178 ◽  
Author(s):  
B. ABIDRI ◽  
J.-P. LACHARME ◽  
M. GHAMNIA ◽  
C. A. SÉBENNE ◽  
M. EDDRIEF ◽  
...  
Keyword(s):  
Electron Diffraction ◽  
Electron Spectroscopy ◽  
Auger Electron ◽  
Room Temperature ◽  
Annealing Temperature ◽  
Low Energy ◽  
Layered Semiconductor ◽  
Low Energy Electron Diffraction ◽  
Low Energy Electron ◽  
Temperature Interaction

Single crystal substrates of GaSe, a layered semiconductor with a 2 eV band gap, were epitaxially grown by MBE onto a Si(111)(1×1)–H substrate, forming a perfectly abrupt heterojunction. Controlled amounts of Cu were sequentially deposited onto the clean passive surface of GaSe from a few tenths to several hundred monolayers (1 ML refers to the GaSe surface: 8 × 1014 at/cm 2). After given Cu depositions, the effect of UHV annealings at increasing temperatures was studied, until GaSe removal. The system was characterized as a function of either Cu deposit or annealing temperature using low energy electron diffraction, Auger electron spectroscopy and photoemission yield spectroscopy. The room temperature interaction starts as an apparent intercalation process until Cu islands begin to form, beyond about 50 ML. Upon annealings as low as 250°C, several ML of Cu disappear into the bulk of an apparently recovered GaSe, towards the GaSe/Si interface.

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