Formation of Microcrystalline Silicon film by RMS Process

1989 ◽  
Vol 164 ◽  
Author(s):  
Cheng Wang ◽  
G.N. Parsons ◽  
E.C. Buehler ◽  
R.J. Nemanich ◽  
G. Lucovsky
Keyword(s):  
Electron Microscopy ◽  
Transmission Electron Microscopy ◽  
Silicon Film ◽  
Reactive Magnetron ◽  
Growth Mechanisms ◽  
Microcrystalline Silicon ◽  
Transmission Electron ◽  
Substrate Temperatures ◽  
Microcrystalline Silicon Film ◽  
Deposition Conditions

AbstractWe have deposited microcrystalline, gc-Si, silicon films by using RF reactive magnetron sputtering (RMS) at high substrate temperatures, Ts > 500°C, and at a relatively low partial pressure of hydrogen, PH = 0.40 mTorr, and at low Ts ∼200- 300°C, but with a higher PH > 2 mTorr. We have detected μc-crystallinity by Raman scattering and transmission electron microscopy. We discuss differences in the growth mechanisms for formation of μc-Si under these two deposition conditions.

Mg–Ti–spinel formation by interfacial solid-state reaction at the TiN/MgO interface

1989 ◽  
Vol 4 (5) ◽  
pp. 1266-1271 ◽  
Author(s):  
L. Hultman ◽  
J-E. Sundgren ◽  
D. Hesse
Keyword(s):  
Electron Microscopy ◽  
Transmission Electron Microscopy ◽  
Solid State ◽  
Reactive Magnetron ◽  
Cross Sectional ◽  
Tin Films ◽  
Spinel Formation ◽  
Transmission Electron ◽  
Spinel Composition ◽  
Substrate Temperatures

Mg–Ti–spinel formation has been observed by cross-sectional transmission electron microscopy at the interface of TiN(100) films and MgO(100) substrates for films grown at substrate temperatures higher than 800 °C and for samples post-annealed at 850 °C. The TiN films were deposited by reactive magnetron sputtering onto cleaved (100)-oriented MgO substrates. The spinel formed 5 nm epitaxial layers along the interface with occasional (111) wedges growing into the MgO. The orientational relationships were found to be TiN(100)|spinel(100)|MgO(100) and TiN[001]|spinel[001]|MgO[001]. The spinel composition is suggested to be Mg2TiO4.

Pyrolytic and Laser Photolytic Growth of Crystalline and Amorphous Germanium Films from Digermane (Ge2H6)

1988 ◽  
Vol 131 ◽  
Author(s):  
Djula Eres ◽  
D. H. Lowndes ◽  
J. Z. Tischler ◽  
J. W. Sharp ◽  
D. B. Geohegan ◽  
...  
Keyword(s):  
Electron Microscopy ◽  
Transmission Electron Microscopy ◽  
High Purity ◽  
X Ray Diffraction ◽  
X Ray ◽  
Transmission Electron ◽  
Partial Pressures ◽  
193 Nm ◽  
Substrate Temperatures ◽  
Deposition Conditions

ABSTRACTHigh-purity digermane (Ge2H6, 5% in He) has been used to grow epitaxially oriented crystalline Ge films by pyrolysis. Amorphous Ge:H films also have been deposited by pyrolysis and ArF (193 nm) laser-induced photolysis. The amorphous-to-crystalline transition and the film's morphology was studied as a function of deposition conditions. The film's microstructure, strain and epitaxial quality were assessed using x-ray diffraction curves and scanning and transmission electron microscopy. It was found that commensurate, coherently strained epitaxial Ge films could be grown pyrolytically on (100) GaAs at low (0.05–40 m Torr) Ge2H6 partial pressures, for substrate temperatures above 380°C.

Photo Modified Growth of GaAs by Chemical Beam Epitaxy

1998 ◽  
Vol 510 ◽  
Author(s):  
R. Jothilingam ◽  
T. Farrell ◽  
T.B. Joyce ◽  
P.J. Goodhew
Keyword(s):  
Electron Microscopy ◽  
Transmission Electron Microscopy ◽  
Growth Rate ◽  
Electrical Power ◽  
Xenon Lamp ◽  
Chemical Beam Epitaxy ◽  
Cross Sectional ◽  
Transmission Electron ◽  
Substrate Temperatures ◽  
Laser Reflectometry

AbstractWe report the photo modified growth of GaAs by chemical beam epitaxy at substrate temperatures in the range 335 to 670°C using triethygallium (TEG) and arsine. A mercury-xenon lamp (electrical power 200 W) provided the irradiation for the photoassisted growth. The growth was monitored in real time by laser reflectometry (LR) using a 670 nm semiconductor laser, and the optically determined growth rate agreed with that obtained from the layer thickness measured by cross sectional transmission electron microscopy. The observed photo-enhancement of the growth rate at low substrate temperatures and inhibition at high substrate temperatures is thermal in origin, consistent with raising the substrate temperature by 10±3°C. Cross sectional transmission electron microscopy showed that the photoassisted layers are essentially free from dislocations

Superconductivity of Dc Reactive Magnetron Sputtered Epitaxial TiN/NbN Superlattices

1992 ◽  
Vol 275 ◽  
Author(s):  
M. Shinn ◽  
B. -S. Hong ◽  
S. A. Barnett
Keyword(s):  
Magnetic Field ◽  
Electron Microscopy ◽  
Transmission Electron Microscopy ◽  
Film Surface ◽  
Wavelength Dependence ◽  
Reactive Magnetron ◽  
Superconducting Transition ◽  
X Ray Diffraction ◽  
X Ray ◽  
Transmission Electron

ABSTRACTEpitaxial B1-structure TiN/NbN superlattices have been grown by reactive magnetron sputtering On MgO(001). X-ray diffraction and transmission electron microscopy (TEM) diffraction spectra exhibited up to nine orders of superlattice reflections, indicating that the superlattice interfaces were relatively sharp. TEM images also showed well-defined layers. The superlattice wavelength (∧) dependence of the superconducting transition temperature (Tc), critical Current density (Jc), and electrical resistivity (ρ) have been investigated. Tc values increased from 12 K to 17 K with increasing ∧. Jc in a magnetic field perpendicular to the film surface ranged from 104 to 106 A/cm2, increasing with increasing wavelength and decreasing with increasing applied magnetic field. Jc in a field parallel to the film surface was > 10 times higher, ≈ 107 A/cm2. The resistivity exhibited different ∧ dependencies in three different A ranges.

Synthesis of Iron Oxide Nanowires by Heating Iron Foils

2007 ◽  
Vol 342-343 ◽  
pp. 597-600
Author(s):  
Hyoun Woo Kim ◽  
S.H. Shim ◽  
B.H. O ◽  
S.G. Lee ◽  
S.G. Park ◽  
...  
Keyword(s):  
Electron Microscopy ◽  
Scanning Electron Microscopy ◽  
Transmission Electron Microscopy ◽  
Iron Oxide ◽  
Diffraction Pattern ◽  
Growth Mechanisms ◽  
Oxide Nanowires ◽  
X Ray ◽  
Transmission Electron ◽  
Scanning Electron

We have fabricated the iron oxide nanowires directly from iron foils through the simple heating in N2 ambient. We have characterized the samples by means of scanning electron microscopy, transmission electron microscopy, energy-dispersive X-ray (EDX) spectroscopy, and selected area diffraction pattern. The EDX spectrum revealed that the nanowires contained elements of Fe and O. The iron oxide nanowires were crystalline with diameters in the range of 30-200 nm. We have discussed the possible growth mechanisms.

On the Coercivity of Granular Fe-SiO2 Films

1988 ◽  
Vol 132 ◽  
Author(s):  
S. H. Liou ◽  
C. H. Chen ◽  
H. S. Chen ◽  
A. R. Kortan ◽  
C. L. Chien
Keyword(s):  
Electron Microscopy ◽  
Transmission Electron Microscopy ◽  
Substrate Temperature ◽  
High Substrate Temperature ◽  
Linear Temperature ◽  
Sio2 Films ◽  
High Substrate ◽  
Transmission Electron ◽  
Substrate Temperatures

ABSTRACTThe coercivity of granular Fe embedded inside an SiO2 matrix was as high as 3 kOe at 6K, and 1.1 kOe at 300K. In this study, we observed a linear temperature (T) dependence of the coercivity for the samples prepared at a high substrate temperature (773K), and a T1/2 dependence of the coercivity for the sample prepared at a low substrate temperature (473K). This indicates that the microstructures of films prepared at different substrate temperatures are not the same. This phenomenon can be explained if we assume that there are interconnections between particles for the sample prepared at a high substrate temperature. We looked for evidence of interconnections between particles with transmission electron microscopy (TEM).

A combinatorial approach to solution-processed InGaO3(ZnO)m superlattice films: growth mechanisms and their thermoelectric properties

CrystEngComm ◽  
2016 ◽  
Vol 18 (5) ◽  
pp. 807-815 ◽  
Author(s):  
Sung Woon Cho ◽  
Myoungho Jeong ◽  
Jun Hyeon Kim ◽  
Yong Hun Kwon ◽  
Hyoungsub Kim ◽  
...  
Keyword(s):  
Electron Microscopy ◽  
Transmission Electron Microscopy ◽  
Thermoelectric Power ◽  
Thermoelectric Properties ◽  
Single Phase ◽  
Combinatorial Approach ◽  
Growth Mechanisms ◽  
Transmission Electron ◽  
Superlattice Structures ◽  
Growth Evolution

The strong single-phase InGaO3(ZnO)m films with superlattice structures showed superior thermoelectric power factors. Their microstructural growth evolution was investigated using transmission electron microscopy in detail.

Transmission Electron Microscopy and X-Ray Diffraction Studies of a,b-Axis Oriented YBa2Cu3O7-δ Films

1992 ◽  
Vol 275 ◽  
Author(s):  
S. K. Streiffer ◽  
B. M. Lairson ◽  
E. M. Zielinski ◽  
J. C. Bravman
Keyword(s):  
Electron Microscopy ◽  
Transmission Electron Microscopy ◽  
High Resolution ◽  
X Ray Diffraction ◽  
X Ray ◽  
Transmission Electron ◽  
Microscopy Data ◽  
Film Substrate ◽  
Substrate Temperatures ◽  
High Resolution Microscopy

ABSTRACTQuantitative high resolution transmission electron microscopy and x-ray diffraction have been used to study films of YBa2Cu3O7-δ grown on LaAlO3 substrates at low substrate temperatures. Based on analysis of high-resolution micrographs, it is asserted that the films are b-axis oriented near the film-substrate interface, and switch to a-axis oriented at some distance away from the interface, in a manner which varies from sample to sample. Thus, the films undergo a change in orientation as a function of distance from the substrate. X-ray diffraction confirms that these films contain both a-axis oriented and b-axis oriented components normal to the plane of the substrate, consistent with the high-resolution microscopy data.

Growth of Metamorphic InGaP for Wide-Bandgap Photovoltaic Junction by MBE

2010 ◽  
Vol 1268 ◽  
Author(s):  
John Simon ◽  
Stephanie Tomasulo ◽  
Paul Simmonds ◽  
Manuel J Romero ◽  
Minjoo Larry Lee
Keyword(s):  
Electron Microscopy ◽  
Transmission Electron Microscopy ◽  
Molecular Beam ◽  
Strain Relaxation ◽  
Wide Bandgap ◽  
Threading Dislocation ◽  
Step Size ◽  
Transmission Electron ◽  
Dislocation Densities ◽  
Substrate Temperatures

AbstractMetamorphic triple-junction solar cells can currently attain efficiencies as high as 41.1%. Using additional junctions could lead to efficiencies above 50%, but require the development of a wide bandgap (2.0-2.2eV) material to act as the top layer. In this work we demonstrate wide bandgap InyGa1-yP grown on GaAsxP1-x via solid source molecular beam epitaxy. Unoptimized tensile GaAsxP1-x buffers grown on GaAs exhibit asymmetric strain relaxation, along with formation of faceted trenches 100-300 nm deep in the [01-1] direction. Smaller grading step size and higher substrate temperatures minimizes the facet trench density and results in symmetric strain relaxation. In comparison, compressively-strained graded GaAsxP1-x buffers on GaP show nearly-complete strain relaxation of the top layers and no evidence of trenches. We subsequently grew InyGa1-yP layers on the GaAsxP1-x buffers. Photoluminescence and transmission electron microscopy measurements show no indication of phase separation or CuPt ordering. Taken in combination with the low threading dislocation densities obtained, MBE-grown InyGa1-yP layers are promising candidates for future use as the top junction of a multi-junction solar cell.

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