Fabrication of Planar and Cross-Sectional TEM Specimens Using a Focused Ion Beam

1990 ◽  
Vol 199 ◽  
Author(s):  
R. J. Young ◽  
E. C. G. Kirk ◽  
D. A. Williams ◽  
H. Ahmed
Keyword(s):  
Electron Microscopy ◽  
Integrated Circuits ◽  
Focused Ion Beam ◽  
Ion Beam ◽  
Cross Sectional ◽  
Transmission Electron ◽  
A New Technique ◽  
Sectional Analysis ◽  
Selection Of ◽  
Better Than

ABSTRACTA new technique using a focused ion beam has been developed for the fabrication of transmission electron microscopy specimens in pre-selected regions. The method has been proven in the fabrication of both cross-sectional and planar specimens, with no induced artefacts. The lateral accuracy achievable in the selection of an area for cross-sectional analysis is better than one micrometre. The technique has been applied to a number of silicon and III-V based integrated circuits, and is expected to be suitable for many other materials and structures.

TEM Sample Preparation Tricks for Advanced DRAMs

2015 ◽  
Author(s):  
Ching Shan Sung ◽  
Hsiu Ting Lee ◽  
Jian Shing Luo
Keyword(s):  
Electron Microscopy ◽  
Transmission Electron Microscopy ◽  
Sample Preparation ◽  
Integrated Circuit ◽  
Focused Ion Beam ◽  
Ion Beam ◽  
Tem Analysis ◽  
Cross Sectional ◽  
Transmission Electron ◽  
Characterization Of Materials

Abstract Transmission electron microscopy (TEM) plays an important role in the structural analysis and characterization of materials for process evaluation and failure analysis in the integrated circuit (IC) industry as device shrinkage continues. It is well known that a high quality TEM sample is one of the keys which enables to facilitate successful TEM analysis. This paper demonstrates a few examples to show the tricks on positioning, protection deposition, sample dicing, and focused ion beam milling of the TEM sample preparation for advanced DRAMs. The micro-structures of the devices and samples architectures were observed by using cross sectional transmission electron microscopy, scanning electron microscopy, and optical microscopy. Following these tricks can help readers to prepare TEM samples with higher quality and efficiency.

Two-Dimensional Damage Distributions Induced by Localized Ion Implantations

1992 ◽  
Vol 283 ◽  
Author(s):  
M. M. Faye ◽  
L. Laanab ◽  
J. Beauvillain ◽  
A. Claverie ◽  
C. Vieu ◽  
...  
Keyword(s):  
Electron Microscopy ◽  
Transmission Electron Microscopy ◽  
Focused Ion Beam ◽  
Ion Beam ◽  
Two Dimensional ◽  
Cross Sectional ◽  
Quantum Nanostructures ◽  
Transmission Electron ◽  
Ion Beam Implantation ◽  
General Method

ABSTRACTA general method is presented for calculating the spatial distribution of damage generated by localized implantation in semiconductors. Implantation through masks and focused ion beam implantation in GaAs are simulated and compared to cross-sectional transmission electron microscopy observations. An excellent agreement is obtained when a depth-dependent lateral straggle is considered. Arbitrarily shaped mask edges and different compositions for the mask and the substrate are included in the calculations as well as realistic current profiles of the ion spot in the case of focused ion beam implantations. Simulations and experiments clearly demonstrate the potential application of localized implantations to fabricate lateral quantum nanostructures.

Characterization of Heterointerfaces in Thin-Film Transistors by Cross-Sectional Transmission Electron Microscopy

1996 ◽  
Vol 466 ◽  
Author(s):  
K. Kuroda ◽  
S. Tsuji ◽  
Y. Hayashi ◽  
H. Saka
Keyword(s):  
Thin Film ◽  
Electron Microscopy ◽  
Transmission Electron Microscopy ◽  
Thin Film Transistors ◽  
Focused Ion Beam ◽  
Ion Beam ◽  
Multilayered Structure ◽  
Silicon Thin Film ◽  
Cross Sectional ◽  
Transmission Electron

ABSTRACTHydrogenated amorphous silicon thin-film transistors (a-Si:H TFTs) are now widely used as elements for active matrix liquid crystal displays. The nanometer-scale multilayered structure of a-Si:H TFTs has been characterized by cross-sectional transmission electron microscopy (TEM). The discrete layer construction of a faulty TFTs and the generation of defects during manufacturing processes have been investigated. A combination of focused ion beam (FIB) etching and cross-sectional TEM leads to a successful failure analysis. A contamination layer with a thickness of 10–30 nm and microvoids inside multilayers are identified in faulty TFTs. An a-Si layer on silicon nitride (SiNx) is crystallized during TEM observation. Electron energy loss spectroscopy analysis indicates that the diffusion of nitrogen into a-Si layer causes the crystallization.

Cross-Sectional Transmission Electron Microscopy Sample Preparation Using Focus Ion Beam Machine and Wedge Technique

1999 ◽  
Vol 5 (S2) ◽  
pp. 894-895 ◽  
Author(s):  
Du Li ◽  
Rose Zhou ◽  
Rob Zanoya
Keyword(s):  
Electron Microscopy ◽  
Transmission Electron Microscopy ◽  
Focused Ion Beam ◽  
General Procedure ◽  
Ion Beam ◽  
Optical Microscope ◽  
Cross Sectional ◽  
Transmission Electron ◽  
Focus Ion Beam ◽  
Tem Grid

As features on an IC chip become smaller than the resolution power of an optical microscope and of the size of the grinding particles, the trend for preparing cross-sectional transmission electron microscopy (TEM) samples at specific locations (bits) is moving towards using a focused ion beam (FIB) machine. Details on how to use a FIB machine to prepare cross-sectional TEM samples have been outlined in many references.The general procedure is to first mark the specific location (bit) in the FIB machine and then grind the sample down to about 20 microns, 10 microns on each side of the feature of interest. After grinding, the sample is mounted on a pre-cut TEM grid and thinned with the FIB to about 0.1 micron in the region containing the feature of interest. There are several disadvantages to this method. First, the sample goes into the FIB machine at least twice—once for FIB marks on the location and once again for the final thinning.

Perfect TEM Membranes by focused ion beams: A stress reduction technique

1996 ◽  
Vol 54 ◽  
pp. 1030-1031
Author(s):  
John F. Walker ◽  
James K. Odum ◽  
Peter D. Carleson
Keyword(s):  
Electron Microscopy ◽  
Integrated Circuits ◽  
Sample Preparation ◽  
Stress Reduction ◽  
Focused Ion Beam ◽  
Process Analysis ◽  
Ion Beam ◽  
Critical Dimensions ◽  
Transmission Electron ◽  
Preparation Techniques

With the realisation that the critical dimensions in integrated circuits are shrinking to the point where scanning electron microscopy (SEM) techniques are not sufficiently accurate for many applications, advanced semiconductor fabs are looking to the increased resolution and analytical functionality of transmission electron microscopy (TEM) in failure and process analysis. TEM sample preparation is traditionally labour-intensive and needs skilled technical support but, with the acceptance of focused ion beam (FIB) workstations, this preparation and subsequent analysis is now becoming more routine. The reasons are: more reliable preparation with less risk of catastrophic breaking on unique specimens, highly site-specific preparation capable of viewing individual, sub-100 nm features, thin and uniform membranes even with tungsten plugs, and fast and easy preparation techniques.The initial stages of sample preparation involves preparing a sub-100 um sliver mounted on a TEM grid. When mounting this sliver on the grid, care must be taken to prevent any strain from being transferred to the silicon.

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