A Technique for the Preparation of Thin-Film Cross-Sections for Transmission Electron Microscopy

1990 ◽  
Vol 199 ◽  
Author(s):  
M. Libera ◽  
T. A. Nguyen ◽  
C. Hwang
Keyword(s):  
Thin Film ◽  
Electron Microscopy ◽  
Thin Films ◽  
Data Storage ◽  
Cross Sections ◽  
Film Plane ◽  
Microstructural Study ◽  
Transmission Electron ◽  
Sophisticated Equipment ◽  
Tem Grid

ABSTRACTA number of techniques for producing TEM cross-sections of thin films have been described in recent years as the need for improved and more-thorough microstructural study of thin-film materials has grown. We have developed a method for producing such cross-sections which involves little sophisticated equipment other than an ion mill for thinning. Following the method of Bravman and Sinclair (J. Elec. Micrs. Tech 1,53–61 (1984)), the film of interest is either deposited on or epoxied to a silicon wafer and a composite of six silicon beams (=3mm × 25mm × 0.5mm) is fabricated. Slices are cut from this composite perpendicular to the film plane, and each slice is mechanically thinned by a series of simple grinding and polishing steps to ∼ 50–100μm. Dimpling is not necessary. The specimen is mounted onto a slotted TEM grid which provides a vehicle for safe handling, and the specimen is ion milled to perforation. We have found the technique to be relatively fast, reliable, and simple. Its success hinges on minimizing the amount of direct handling required when the specimen is thin and fragile. We present a detailed recipe describing its various steps and show typical results from studies of thin films for data-storage applications.

Electron Microscopy Studies of The Chemistry And Microstructure of BaF2 / YBa2Cu3O7-x Thin Films

1994 ◽  
Vol 52 ◽  
pp. 796-797
Author(s):  
J. L. Lee ◽  
C. A. Weiss ◽  
R. A. Buhrman ◽  
J. Silcox
Keyword(s):  
Thin Film ◽  
Electron Microscopy ◽  
Thin Films ◽  
Scanning Transmission Electron Microscope ◽  
Atomic Scale ◽  
Island Growth ◽  
Multilayer Systems ◽  
Transmission Electron ◽  
Scanning Transmission ◽  
Mgo Substrate

BaF2 thin films are being investigated as candidates for use in YBa2Cu3O7-x (YBCO) / BaF2 thin film multilayer systems, given the favorable dielectric properties of BaF2. In this study, the microstructural and chemical compatibility of BaF2 thin films with YBCO thin films is examined using transmission electron microscopy and microanalysis. The specimen was prepared by using laser ablation to first deposit an approximately 2500 Å thick (0 0 1) YBCO thin film onto a (0 0 1) MgO substrate. An approximately 7500 Å thick (0 0 1) BaF2 thin film was subsequendy thermally evaporated onto the YBCO film.Images from a VG HB501A UHV scanning transmission electron microscope (STEM) operating at 100 kV show that the thickness of the BaF2 film is rather uniform, with the BaF2/YBCO interface being quite flat. Relatively few intrinsic defects, such as hillocks and depressions, were evident in the BaF2 film. Moreover, the hillocks and depressions appear to be faceted along {111} planes, suggesting that the surface is smooth and well-ordered on an atomic scale and that an island growth mechanism is involved in the evolution of the BaF2 film.

Palladium Nanowire Thin Films via Template Growth

2003 ◽  
Vol 775 ◽  
Author(s):  
Donghai Wang ◽  
David T. Johnson ◽  
Byron F. McCaughey ◽  
J. Eric Hampsey ◽  
Jibao He ◽  
...  
Keyword(s):  
Thin Film ◽  
Electron Microscopy ◽  
Thin Films ◽  
X Ray Diffraction ◽  
X Ray ◽  
Transmission Electron ◽  
Conductive Substrate ◽  
Palladium Nanowires ◽  
Efficient Route ◽  
Silica Thin Film

AbstractPalladium nanowires have been electrodeposited into mesoporous silica thin film templates. Palladium continually grows and fills silica mesopores starting from a bottom conductive substrate, providing a ready and efficient route to fabricate a macroscopic palladium nanowire thin films for potentially use in fuel cells, electrodes, sensors, and other applications. X-ray diffraction (XRD) and transmission electron microscopy (TEM) indicate it is possible to create different nanowire morphology such as bundles and swirling mesostructure based on the template pore structure.

Simultaneous Occurrence of Multiphases in the Interfacial Reactions of Ultrahigh Vacuum Deposited Ti, Hf and Cr Thin Films on (111)Si

1993 ◽  
Vol 311 ◽  
Author(s):  
W.W. Hsieh ◽  
J.J. Lin ◽  
M.M. Wang ◽  
L.L. Chen
Keyword(s):  
Thin Film ◽  
Electron Microscopy ◽  
Thin Films ◽  
Ultrahigh Vacuum ◽  
Interfacial Reactions ◽  
Simultaneous Occurrence ◽  
Image Simulation ◽  
Reaction Sequence ◽  
Transmission Electron ◽  
Amorphous Interlayer

ABSTRACTSimultaneous occurrence of multiphases was observed in the interfacial reactions of ultrahigh vacuum deposited Ti, Hf and Cr thin films on (111)Si by high resolution transmission electron microscopy in conjunction with fast Fourier transform diffraction analysis and image simulation. For the three systems, an amorphous interlayer as well as a number of crystalline phase were found to form simultaneously in the early stages of interfacial reactions. The formation of multiphases appeared to be quite general in the initial stages of interfacial reactions of UHV deposited refractory thin films. The results called for a reexamination of generally accepted “difference” in reaction sequence between bulk and thin film couples.

Microstructure of Thin Film Photoconductors and its Correlation with Optical and Electronic Properthss

1996 ◽  
Vol 452 ◽  
Author(s):  
U. Klement ◽  
D. Horst ◽  
F. Ernst
Keyword(s):  
Thin Film ◽  
Electron Microscopy ◽  
Thin Films ◽  
Transmission Electron Microscopy ◽  
Vapour Deposition ◽  
Chemical Vapour ◽  
Hydrogenated Silicon ◽  
Amorphous Hydrogenated Silicon ◽  
Transmission Electron ◽  
Electronic Eye

AbstractThe objective of this work is to find a material to replace amorphous hydrogenated silicon used as photosensitive part in the “retina” of an “electronic eye”. For that reason, ZnS, ZnSe, CdS and CdSe were chosen for investigations. Thin films, prepared by chemical vapour deposition, were characterized by transmission electron microscopy. The observed microstructures were correlated with the optoelectronic properties of these materials. CdSe was found to be the most promising material for our application. Hence, the influence of a dielectric interlayer and the effects of additional annealing treatments were analyzed for CdSe and will be discussed with respect to the optimization of the material.

Fine Tuning Magnetic Properties of FePt:C Thin Films by FePt UnderLayers

2013 ◽  
Vol 313-314 ◽  
pp. 254-257
Author(s):  
Ling Fang Jin ◽  
Hong Zhuang
Keyword(s):  
Thin Film ◽  
Electron Microscopy ◽  
Thin Films ◽  
Magnetic Properties ◽  
Fine Tuning ◽  
Nanocomposite Films ◽  
Nanocomposite Thin Film ◽  
X Ray Diffraction ◽  
X Ray ◽  
Transmission Electron

Nonepitaxially grown FePt (x)/FePt:C thin films were synthesized, where FePt (x) (x=2, 5, 8, 11, 14 nm) layers were served as underlayers and FePt:C layer was nanocomposite with thickness of 5 nm. The effect of FePt underlayer on the ordering, orientation and magnetic properties of FePt:C thin films has been investigated by adjusting FePt underlayer thicknesses from 2 nm to 14 nm. X-ray diffraction (XRD), together with transmission electron microscopy (TEM) confirmed that the desired L10 phase was formed and films were (001) textured with FePt underlayer thickness decreased less 5 nm. For 5 nm FePt:C nanocomposite thin film with 2 nm FePt underlayer, the coercivity was 8.2 KOe and the correlation length of FePt:C nanocomposite film was 67 nm. These results reveal that the better orientation and magnetic properties for FePt:C nanocomposite films can be tuned by decreasing FePt underlayer thickness.

Interfacial Mismatch and Interface Structure of Epitaxial Pb(Mg1/3Nb2/3)O3 (90%)- PbTiO3 (10%) Relaxor Thin Films

2000 ◽  
Vol 6 (S2) ◽  
pp. 462-463
Author(s):  
G. Y. Yang ◽  
V. Nagarajan ◽  
Z. L. Wang ◽  
Y. H. Li ◽  
R. Ramesh
Keyword(s):  
Thin Film ◽  
Electron Microscopy ◽  
Thin Films ◽  
Transmission Electron Microscopy ◽  
Interface Structure ◽  
Relaxor Ferroelectrics ◽  
Dielectric Constants ◽  
Ion Milling ◽  
Sensing Applications ◽  
Transmission Electron

Pb(Mg1/3Nb2/3)O3 (PMN)- and its solid solution with PbTiO3 (PT) is one of the lead-based relaxor ferroelectrics and has been the most widely studied materials because of their high dielectric constants and high electrostrictive coefficients. The potential impact of the thin film ferroelectric relaxors in the integrated actuators and sensing applications has stimulated research on the growth and characterization of thin films. Thin films have been made by pulsed-laser deposition (PLD), sol-gel and metalrganic chemical-vapor deposition. It is known that electrical properties may be strongly influenced by the microstructure of films and the interface structures between different phase in such heterostructure systems. In this paper, we report the investigation of interfacial mismatch and interface structure of epitaxial Pb(Mg1/3Nb2/3)O3 (90%)- PbTiO3 (10%) relaxor thin film by high resolution transmission electron microscopy (HRTEM).Thin film capacitors of Pb(Mg1/3Nb2/3)O3 (90%) - PbTiO3 (10%) (PMN-PT) were grown by PLD on (100)-oriented LaA1O3 (LAO) substrates. La0.5Sr0.5CoO3 (LSCO) layer was deposited as electrode. Cross-sectional transmission electron microscopy samples were prepared following the traditional procedures including cutting, gluing, polishing and ion milling.

Identification of the Failure Mechanism of a Thin Film on a Thick Substrate by Means of Synchrotron X-Ray Topography Combined with Transmission Electron Microscopy

1987 ◽  
Vol 108 ◽  
Author(s):  
D. Goyal ◽  
W. Ng ◽  
A. H. King ◽  
J. C. Bilello
Keyword(s):  
Thin Film ◽  
Electron Microscopy ◽  
Thin Films ◽  
Transmission Electron Microscopy ◽  
Film Thickness ◽  
Film Stress ◽  
Silicon Substrates ◽  
X Ray ◽  
Transmission Electron ◽  
Thick Substrate

ABSTRACTWe have used synchrotron x-ray topographic techniques to study the stresses in thin films formed upon silicon substrates either by evaporation or sputtering. It is found that the film stress generally decreases with increasing film thickness for evaporated films, but film delamination occurs at a well defined film thickness. Transmission electron microscope studies have been performed on the same specimens in order to reveal what mechanisms are involved with the delamination of the films.

Crystallographic and Magnetic Properties of CoCrPt Thin Films Investigated Using Single-Crystal Perpendicular Magnetic Thin Film Samples

2002 ◽  
Vol 721 ◽  
Author(s):  
Masaaki Futamoto ◽  
Kouta Terayama ◽  
Katsuaki Sato ◽  
Nobuyuki Inaba ◽  
Yoshiyuki Hirayama
Keyword(s):  
Thin Film ◽  
Thin Films ◽  
Magnetic Properties ◽  
Single Crystal ◽  
Film Plane ◽  
Magnetic Thin Film ◽  
X Ray Diffraction ◽  
Easy Magnetization ◽  
Transmission Electron ◽  
Magnetization Axis

AbstractConditions to prepare good single-crystal CoCrPt magnetic thin film with the easy magnetization axis perpendicular to the film plane were investigated using oxide single-crystal substrates, Al2O3(0001), LaAlO3(0001), mica(0001), SrTiO3(111), and MgO(111). The best CoCrPt(0001) single-crystal thin film was obtained on an Al2O3(0001) substrate employing a non-magnetic CoCrRu underlayer. The crystallographic quality of single-crystal thin film was investigated using X-ray diffraction and high-resolution transmission electron microscopy. Some intrinsic magnetic properties (Hk, Ku) were determined for the single-crystal CoCrxPty thin films for a compositional range of x=17-20at% and y=0-17at%.

Metastable Phases and the Molecular Beam Epitaxy of Metal Silicides

1987 ◽  
Vol 104 ◽  
Author(s):  
J. M. Gibson
Keyword(s):  
Thin Film ◽  
Electron Microscopy ◽  
Thin Films ◽  
Transmission Electron Microscopy ◽  
Molecular Beam ◽  
Interface Energy ◽  
Metastable Phases ◽  
Transmission Electron ◽  
Metal Silicides

ABSTRACTThe growth of the epitaxial silicides NiSi2 and CoSi2 on Si is discussed from observations made by in-situ transmission electron microscopy. In particular, we observe the occurrence of epitaxial metastable phases which arise from the dominance of interface energy in extremely thin films. Such phases relate to the thickness dependence of the microstructure in these silicides and may be expected to occur in many binary and more complex thin film systems.

Structure of composition-modulated Cu/Ni thin films prepared by electrodeposition

1989 ◽  
Vol 4 (4) ◽  
pp. 755-758 ◽  
Author(s):  
J. Yahalom ◽  
D. F. Tessier ◽  
R. S. Timsit ◽  
A. M. Rosenfeld ◽  
D. F. Mitchell ◽  
...  
Keyword(s):  
Thin Film ◽  
Electron Microscopy ◽  
Thin Films ◽  
Transmission Electron Microscopy ◽  
Cross Section ◽  
Film Structure ◽  
Composition Modulation ◽  
Transmission Electron ◽  
Electron Energy Loss ◽  
Multilayered Thin Films

Copper/nickel multilayered thin-films prepared by electrodeposition have been examined in cross section by electron energy loss spectroscopy and high-resolution transmission electron microscopy. The results of the examinations provide the first direct experimental evidence of the large composition modulation across successive layers in the thin-film structure and the coherent nature of Cu/Ni interfaces.

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