Structure of composition-modulated Cu/Ni thin films prepared by electrodeposition

1989 ◽  
Vol 4 (4) ◽  
pp. 755-758 ◽  
Author(s):  
J. Yahalom ◽  
D. F. Tessier ◽  
R. S. Timsit ◽  
A. M. Rosenfeld ◽  
D. F. Mitchell ◽  
...  
Keyword(s):  
Thin Film ◽  
Electron Microscopy ◽  
Thin Films ◽  
Transmission Electron Microscopy ◽  
Cross Section ◽  
Film Structure ◽  
Composition Modulation ◽  
Transmission Electron ◽  
Electron Energy Loss ◽  
Multilayered Thin Films

Copper/nickel multilayered thin-films prepared by electrodeposition have been examined in cross section by electron energy loss spectroscopy and high-resolution transmission electron microscopy. The results of the examinations provide the first direct experimental evidence of the large composition modulation across successive layers in the thin-film structure and the coherent nature of Cu/Ni interfaces.

Effects of Annealing on The Structure of Ta2N Thin Films Deposited on Al2O3

1994 ◽  
Vol 357 ◽  
Author(s):  
James E. Angelo ◽  
N.R. Moody ◽  
S.K. Venkataraman ◽  
W.W. Gerberich
Keyword(s):  
Thin Film ◽  
Electron Microscopy ◽  
Thin Films ◽  
Transmission Electron Microscopy ◽  
Film Structure ◽  
Orthorhombic Structure ◽  
Epitaxial Relationship ◽  
Thin Film Structure ◽  
Transmission Electron ◽  
Deposition Conditions

AbstractThe microstructure of Ta2N thin films deposited by d.c. magnetron sputtering on (1120) surface of Al2O3 is investigated using transmission electron microscopy. The effects of exposing the thin film structure to a 600°C air environment are also explored. It will be shown that under the standard deposition conditions, stresses exist in the thin film structure which leads to the formation of a textured structure in the as-deposited Ta2N. Exposure of the thin film structure to an air environment transforms the Ta2N to Ta2O5 in the orthorhombic structure. In addition, evidence for a epitaxial relationship between the Ta2O5 and Al2O3 will be presented.

TEM Characterization of As-Deposited and Annealed Ni/Al Multilayer Thin Film

2010 ◽  
Vol 16 (6) ◽  
pp. 662-669 ◽  
Author(s):  
S. Simões ◽  
F. Viana ◽  
A.S. Ramos ◽  
M.T. Vieira ◽  
M.F. Vieira
Keyword(s):  
Electron Microscopy ◽  
Thin Films ◽  
Transmission Electron Microscopy ◽  
Cross Section ◽  
Ion Beam ◽  
Microstructural Characterization ◽  
Multilayer Thin Films ◽  
Tem Analysis ◽  
Plan View ◽  
Transmission Electron

AbstractReactive multilayer thin films that undergo highly exothermic reactions are attractive choices for applications in ignition, propulsion, and joining systems. Ni/Al reactive multilayer thin films were deposited by dc magnetron sputtering with a period of 14 nm. The microstructure of the as-deposited and heat-treated Ni/Al multilayers was studied by transmission electron microscopy (TEM) and scanning transmission electron microscopy (STEM) in plan view and in cross section. The cross-section samples for TEM and STEM were prepared by focused ion beam lift-out technique. TEM analysis indicates that the as-deposited samples were composed of Ni and Al. High-resolution TEM images reveal the presence of NiAl in small localized regions. Microstructural characterization shows that heat treating at 450 and 700°C transforms the Ni/Al multilayered structure into equiaxed NiAl fine grains.

Microstructure of Thin Film Photoconductors and its Correlation with Optical and Electronic Properthss

1996 ◽  
Vol 452 ◽  
Author(s):  
U. Klement ◽  
D. Horst ◽  
F. Ernst
Keyword(s):  
Thin Film ◽  
Electron Microscopy ◽  
Thin Films ◽  
Transmission Electron Microscopy ◽  
Vapour Deposition ◽  
Chemical Vapour ◽  
Hydrogenated Silicon ◽  
Amorphous Hydrogenated Silicon ◽  
Transmission Electron ◽  
Electronic Eye

AbstractThe objective of this work is to find a material to replace amorphous hydrogenated silicon used as photosensitive part in the “retina” of an “electronic eye”. For that reason, ZnS, ZnSe, CdS and CdSe were chosen for investigations. Thin films, prepared by chemical vapour deposition, were characterized by transmission electron microscopy. The observed microstructures were correlated with the optoelectronic properties of these materials. CdSe was found to be the most promising material for our application. Hence, the influence of a dielectric interlayer and the effects of additional annealing treatments were analyzed for CdSe and will be discussed with respect to the optimization of the material.

Interfacial Mismatch and Interface Structure of Epitaxial Pb(Mg1/3Nb2/3)O3 (90%)- PbTiO3 (10%) Relaxor Thin Films

2000 ◽  
Vol 6 (S2) ◽  
pp. 462-463
Author(s):  
G. Y. Yang ◽  
V. Nagarajan ◽  
Z. L. Wang ◽  
Y. H. Li ◽  
R. Ramesh
Keyword(s):  
Thin Film ◽  
Electron Microscopy ◽  
Thin Films ◽  
Transmission Electron Microscopy ◽  
Interface Structure ◽  
Relaxor Ferroelectrics ◽  
Dielectric Constants ◽  
Ion Milling ◽  
Sensing Applications ◽  
Transmission Electron

Pb(Mg1/3Nb2/3)O3 (PMN)- and its solid solution with PbTiO3 (PT) is one of the lead-based relaxor ferroelectrics and has been the most widely studied materials because of their high dielectric constants and high electrostrictive coefficients. The potential impact of the thin film ferroelectric relaxors in the integrated actuators and sensing applications has stimulated research on the growth and characterization of thin films. Thin films have been made by pulsed-laser deposition (PLD), sol-gel and metalrganic chemical-vapor deposition. It is known that electrical properties may be strongly influenced by the microstructure of films and the interface structures between different phase in such heterostructure systems. In this paper, we report the investigation of interfacial mismatch and interface structure of epitaxial Pb(Mg1/3Nb2/3)O3 (90%)- PbTiO3 (10%) relaxor thin film by high resolution transmission electron microscopy (HRTEM).Thin film capacitors of Pb(Mg1/3Nb2/3)O3 (90%) - PbTiO3 (10%) (PMN-PT) were grown by PLD on (100)-oriented LaA1O3 (LAO) substrates. La0.5Sr0.5CoO3 (LSCO) layer was deposited as electrode. Cross-sectional transmission electron microscopy samples were prepared following the traditional procedures including cutting, gluing, polishing and ion milling.

Identification of the Failure Mechanism of a Thin Film on a Thick Substrate by Means of Synchrotron X-Ray Topography Combined with Transmission Electron Microscopy

1987 ◽  
Vol 108 ◽  
Author(s):  
D. Goyal ◽  
W. Ng ◽  
A. H. King ◽  
J. C. Bilello
Keyword(s):  
Thin Film ◽  
Electron Microscopy ◽  
Thin Films ◽  
Transmission Electron Microscopy ◽  
Film Thickness ◽  
Film Stress ◽  
Silicon Substrates ◽  
X Ray ◽  
Transmission Electron ◽  
Thick Substrate

ABSTRACTWe have used synchrotron x-ray topographic techniques to study the stresses in thin films formed upon silicon substrates either by evaporation or sputtering. It is found that the film stress generally decreases with increasing film thickness for evaporated films, but film delamination occurs at a well defined film thickness. Transmission electron microscope studies have been performed on the same specimens in order to reveal what mechanisms are involved with the delamination of the films.

Metastable Phases and the Molecular Beam Epitaxy of Metal Silicides

1987 ◽  
Vol 104 ◽  
Author(s):  
J. M. Gibson
Keyword(s):  
Thin Film ◽  
Electron Microscopy ◽  
Thin Films ◽  
Transmission Electron Microscopy ◽  
Molecular Beam ◽  
Interface Energy ◽  
Metastable Phases ◽  
Transmission Electron ◽  
Metal Silicides

ABSTRACTThe growth of the epitaxial silicides NiSi2 and CoSi2 on Si is discussed from observations made by in-situ transmission electron microscopy. In particular, we observe the occurrence of epitaxial metastable phases which arise from the dominance of interface energy in extremely thin films. Such phases relate to the thickness dependence of the microstructure in these silicides and may be expected to occur in many binary and more complex thin film systems.

Growth of CeO2 thin films deposited on biaxially textured nickel substrates

2003 ◽  
Vol 18 (1) ◽  
pp. 14-26 ◽  
Author(s):  
D. Eyidi ◽  
M. D. Croitoru ◽  
O. Eibl ◽  
R. Nemetschek ◽  
W. Prusseit
Keyword(s):  
Electron Microscopy ◽  
Thin Films ◽  
Transmission Electron Microscopy ◽  
Cross Section ◽  
Film Surface ◽  
Buffer Layers ◽  
Plan View ◽  
Ni Substrate ◽  
Transmission Electron ◽  
Nickel Substrates

CeO2 films are technologically important as buffer layers for the integration of superconducting YBa2Cu3O7−δ films on {100}-biaxially textured Ni substrates, yielding a Ni–CeO2–YBa2Cu3O7−δ layer sequence. The Ni–CeO2 interface is a metal–oxide interface, and the misfit between substrate and film is about 9%. An epitaxial growth model was suggested for this system in the literature. The investigated films were deposited by a reactive thermal evaporation process at substrate temperatures of 650–670 °C with a thickness of 100 nm after deposition. The CeO2 films were characterized by plan-view and cross-section transmission electron microscopy, atomic force microscopy, and scanning electron microscopy. The CeO2 films had a strong {100} biaxial texture with a roughness of approximately 90 nm. No intermediate layer could be found by cross-section transmission electron microscopy at the Ni–CeO2 interface. The films had columnar grains with diameters of 20–50 nm, much smaller than the grain size of the Ni substrate, which was larger than 1 μm. Small-angle grain boundaries and small amounts of 〈111〉-oriented grains were evidenced in plan-view samples by diffraction patterns. The Moiré fringes technique was applied and was ideally suited to image the small rotations (≤3°) of the small CeO2 grains with respect to the Ni substrate. These small rotations of small grains showed that the growth was nonepitaxial, however, biaxially textured. In the CeO2 film samples, nanovoids 5–10 nm in size were observed and were mostly located close to the film surface. A model for the growth of CeO2 thin films on nickel substrates can be proposed on the basis of our results.

scholarly journals Nanoporous Ge thin film production combining Ge sputtering and dopant implantation

2015 ◽  
Vol 6 ◽  
pp. 336-342 ◽  
Author(s):  
Jacques Perrin Toinin ◽  
Alain Portavoce ◽  
Khalid Hoummada ◽  
Michaël Texier ◽  
Maxime Bertoglio ◽  
...  
Keyword(s):  
Thin Film ◽  
Electron Microscopy ◽  
Thin Films ◽  
Scanning Electron Microscopy ◽  
Transmission Electron Microscopy ◽  
Ion Implantation ◽  
High Dose ◽  
Transmission Electron ◽  
Scanning Electron ◽  
Thin Film Production

In this work a novel process allowing for the production of nanoporous Ge thin films is presented. This process uses the combination of two techniques: Ge sputtering on SiO2 and dopant ion implantation. The process entails four successive steps: (i) Ge sputtering on SiO2, (ii) implantation preannealing, (iii) high-dose dopant implantation, and (iv) implantation postannealing. Scanning electron microscopy and transmission electron microscopy were used to characterize the morphology of the Ge film at different process steps under different postannealing conditions. For the same postannealing conditions, the Ge film topology was shown to be similar for different implantation doses and different dopants. However, the film topology can be controlled by adjusting the postannealing conditions.

Investigation of Intermetallic Phase Formation and Structural Analysis in Annealed Al/Cu Bilayer Thin Films

2013 ◽  
Vol 845 ◽  
pp. 221-225
Author(s):  
Zulhelmi Alif Abdul Halim ◽  
Muhammad Azizi Mat Yajid ◽  
Zulkifli Mohd Rosli ◽  
Riyaz Ahmad Mohamad Ali
Keyword(s):  
Thin Film ◽  
Electron Microscopy ◽  
Thin Films ◽  
Transmission Electron Microscopy ◽  
Structural Analysis ◽  
Annealing Temperature ◽  
Intermetallic Phase ◽  
Intermetallic Phases ◽  
X Ray ◽  
Transmission Electron

The growth of intermetallic phases in Al/Cu bilayers thin film having 2/3 layer thickness ratios were characterized by X-ray powder diffraction (XRD), energy dispersive X-ray (EDX) and transmission electron microscopy (TEM). In annealing temperature of 200 °C, the growth is controlled by Cu diffusion which resulted to formation of θ-Al2Cu, η-AlCu, ζ-Al3Cu4 and γ-Al4Cu9 phase.

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