Infrared Characterization of RF Sputter Etching of Polyimide Thin Films

1990 ◽  
Vol 203 ◽  
Author(s):  
S.E. Molis ◽  
D.G. Kim ◽  
S.P. Kowalczyk ◽  
J. Kim
Keyword(s):  
Thin Films ◽  
Infrared Spectroscopy ◽  
Structural Changes ◽  
Surface Damage ◽  
Ion Sputtering ◽  
Absorption Bands ◽  
Damage Layer ◽  
Intensity Changes ◽  
Argon Ion

ABSTRACTWe present infrared spectroscopy as a means of characterizing polyimide structural changes occurring by RF argon ion sputtering. Samples of PMDA-ODA polyimide on chromium coated substrates have been sputter etched from initial thicknesses of 400 Å down to 10 Å. Relative intensity changes in imide vibrational absorption bands have been interpreted in terms of orientational reordering which occurs during the ion sputtering process. The appearance of a new vibration at 1580 cm–1 in the spectra of samples etched below 50 Å is assigned as the Elu mode of graphite corresponding to a surface damage layer which is of a graphitic form.

Temperature Dependence of Ar Sputtering of CoSi2 Thin Films on Si and SiO2

1991 ◽  
Vol 235 ◽  
Author(s):  
Q. Z. Hong ◽  
J. M. E. Harper
Keyword(s):  
Thin Films ◽  
Temperature Dependence ◽  
Etch Rate ◽  
Elevated Temperatures ◽  
Ion Sputtering ◽  
Second Stage ◽  
Silicide Layer ◽  
Initial Stage ◽  
Co Concentration ◽  
Argon Ion

ABSTRACTThe temperature dependence of 300 eV argon ion sputtering of CoSi2 thin films in the range 50–600°C has been investigated. At temperatures above 400°C, the etch rate of CoSi2 on Si is significantly reduced, while the underlying Si reacts with the Co atoms diffusing from the silicide surface. As a result, the silicide layer effectively moves into the substrate during Ar bombardment. During sputtering of CoSi2 on Sio2, the thickness of the silicide layer decreases almost linearly with bombarding time until all the silicide is removed. Similar behavior is observed in low temperature sputtering of CoSi2 on (100) Si and evaporated Si. However, at elevated temperatures (400°C< <600°C), sputtering of CoSi2 on Si undergoes two consecutive stages. During the initial stage, the thickness of the silicide layer decreases at the same rate as that of the silicide on SiO2, and is accompanied by an enrichment in Co concentration near the surface. During the second stage, the etch rate of the silicide is reduced to only one third of the rate during the initial stage.

Characterization of magnesium fluoride thin films produced by argon ion beam-assisted deposition

2001 ◽  
Vol 382 (1-2) ◽  
pp. 61-68 ◽  
Author(s):  
L. Dumas ◽  
E. Quesnel ◽  
J.-Y. Robic ◽  
Y. Pauleau
Keyword(s):  
Thin Films ◽  
Ion Beam ◽  
Magnesium Fluoride ◽  
Ion Beam Assisted Deposition ◽  
Argon Ion

scholarly journals Structural changes induced by argon ion irradiation in TiN thin films

2011 ◽  
Vol 5 (1) ◽  
pp. 19-23 ◽  
Author(s):  
Maja Popovic ◽  
Mirjana Novakovic ◽  
Zlatko Rakocevic ◽  
Natasa Bibic
Keyword(s):  
Thin Films ◽  
Structural Changes ◽  
Ion Irradiation ◽  
Grazing Angle ◽  
Film Structure ◽  
Cross Sectional ◽  
Force Microscopy ◽  
Transmission Electron ◽  
Tin Thin Films ◽  
Argon Ion

In this work, the effects of 120 keV Ar+ ion implantation on the structural properties of TiN thin films were investigated. TiN layers were deposited by d.c. reactive sputtering on Si(100) wafers at room temperature or at 150?C. The thickness of TiN layers was ~240 nm. After deposition the samples were irradiated with 120 keV argon ions to the fluencies of 1?1015 and 1?1016 ions/cm2. Structural characterization was performed with Rutherford backscattering spectroscopy (RBS), cross-sectional transmission electron microscopy (XTEM), grazing angle X-ray diffraction (XRD) and atomic force microscopy (AFM). It was found that the argon ion irradiation induced the changes in the lattice constant, mean grain size, micro-strain and surface morphology of the TiN layers. The observed micro-structural changes are due to the formation of the high density damage region in the TiN thin film structure.

Infrared spectroscopy characterization of thin films used in solid state micro-batteries

1989 ◽  
Vol 29 (2-4) ◽  
pp. 769-774 ◽  
Author(s):  
C. Julien ◽  
M. Massot ◽  
P. Dzwonkowski ◽  
J.Y. Emery ◽  
M. Balkanski
Keyword(s):  
Thin Films ◽  
Infrared Spectroscopy ◽  
Solid State

CHARACTERIZATION OF DROP CASTED CuTsPc FILMS ON ITO SUBSTRATES

2013 ◽  
Vol 12 (01) ◽  
pp. 1350001 ◽  
Author(s):  
AMAN MAHAJAN ◽  
ANSHUL KUMAR ◽  
MANDEEP SINGH ◽  
DINESH PATHAK ◽  
R. K. BEDI
Keyword(s):  
Thin Films ◽  
Dielectric Constant ◽  
Absorption Spectra ◽  
Organic Solar Cells ◽  
Band Gaps ◽  
Absorption Bands ◽  
X Ray ◽  
Atomic Force ◽  
Phthalocyanine Molecule

This study evaluated the possibility of utilizing a drop-cast process for CuTsPc -based organic solar cells. CuTsPc thin films were deposited by drop-cast method on ITO substrate. The absorption spectra of these films show two well-defined absorption bands of phthalocyanine molecule, namely, the soret (B) and Q-band. The band gaps calculated from the absorption spectra is found to lie in the range of 1.55–4.04 eV. X-ray diffractogram of the films indicate their polycrystalline nature. Atomic force microscope (AFM) investigations of the films show granular grain like morphology. The data for mobility, dielectric constant, extinction coefficient and refractive index are also presented in this communication.

scholarly journals Synthesis, structure and characterization of a new cadmium(II) iodide containing a tetradentate tripodal amine

2014 ◽  
Vol 10 (5) ◽  
pp. 2728-2736 ◽  
Author(s):  
Kamel Kaabi ◽  
Valeria Ferretti ◽  
Frederic Lefebvre ◽  
Cherif Ben Nasr
Keyword(s):  
Infrared Spectroscopy ◽  
Dft Calculations ◽  
Absorption Bands ◽  
Nmr Spectrum ◽  
X Ray ◽  
Trigonal Bipyramidal ◽  
Cp Mas Nmr ◽  
13C Cp Mas Nmr ◽  
Distorted Trigonal Bipyramidal

A cadmium(II) iodide compound of the [Cd(L)I]I series, with L = tris(2-aminoethyl)amine, is synthesized and characterized. X-ray structural study shows that the title compound has a slightly distorted trigonal bipyramidal environment where the CdN4I chromophore is bounded by N atoms of L and one iodide. In the structural arrangement, the [Cd(L)I]+ cationic complexes are interconnected via N-H···I hydrogen bonds generated by the uncoordinated I iodide anions to form layers parallel to the (a, c) plane. The 13C CP-MAS NMR spectrum is discussed and the vibrational absorption bands were identified by infrared spectroscopy and DFT calculations.

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