Rapid Thermal Annealing Effects in InxGal−xAs/GaAs Strained-Layer Superlattices

1991 ◽  
Vol 221 ◽  
Author(s):  
J.A. Olsen ◽  
E.L. Hu ◽  
D.R. Myers ◽  
J.F. Klem ◽  
Andrew Skumanich
1987 ◽  
Vol 91 ◽  
Author(s):  
N. El-Masry ◽  
N. Hamaguchi ◽  
J.C.L. Tarn ◽  
N. Karam ◽  
T.P. Humphreys ◽  
...  

ABSTRACTInxGa11-xAs-GaAsl-yPy strained layer superlattice buffer layers have been used to reduce threading dislocations in GaAs grown on Si substrates. However, for an initially high density of dislocations, the strained layer superlattice is not an effective filtering system. Consequently, the emergence of dislocations from the SLS propagate upwards into the GaAs epilayer. However, by employing thermal annealing or rapid thermal annealing, the number of dislocation impinging on the SLS can be significantly reduced. Indeed, this treatment greatly enhances the efficiency and usefulness of the SLS in reducing the number of threading dislocations.


1996 ◽  
Vol 35 (Part 1, No. 8) ◽  
pp. 4220-4224 ◽  
Author(s):  
M. D. Kim ◽  
T. W. Kang ◽  
M. S. Han ◽  
T. W. Kim

2002 ◽  
Vol 92 (7) ◽  
pp. 4129-4131 ◽  
Author(s):  
H. Y. Huang ◽  
J. Q. Xiao ◽  
C. S. Ku ◽  
H. M. Chung ◽  
W. K. Chen ◽  
...  

1994 ◽  
Author(s):  
De-Dui Liao ◽  
Yih-Shung Lin ◽  
Hong Yang ◽  
Howard Witham ◽  
Javier Saenz ◽  
...  

1988 ◽  
Vol 3 (12) ◽  
pp. 1166-1170 ◽  
Author(s):  
H Brugger ◽  
E Friess ◽  
G Abstreiter ◽  
E Kasper ◽  
H Kibbel

1991 ◽  
Vol 70 (4) ◽  
pp. 2366-2369 ◽  
Author(s):  
Jong‐Sung Hong ◽  
Yong Tae Kim ◽  
Suk‐Ki Min ◽  
Tae Won Kang ◽  
Chi Yhou Hong

2015 ◽  
Vol 11 (1) ◽  
pp. 73-81 ◽  
Author(s):  
V. Rajagopal Reddy ◽  
D. Sri Silpa ◽  
V. Janardhanam ◽  
Hyung-Joong Yun ◽  
Chel-Jong Choi

Vacuum ◽  
2002 ◽  
Vol 67 (3-4) ◽  
pp. 531-536 ◽  
Author(s):  
E San Andrés ◽  
A del Prado ◽  
I Mártil ◽  
G González Dı́az ◽  
F.L Martinez ◽  
...  

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