Effect of Surface Ambient on Manganese Diffusion in Gallium Arsenide

1991 ◽  
Vol 240 ◽  
Author(s):  
C. H. Wu ◽  
K. C. Hsieh

ABSTRACTData are presented showing the effects of diffusion sources, surface encapsulation, and As overpressure on Mn diffusion in GaAs. Four different Mn-containing sources are used, including Mn, Mn,MN3As, and MnAs granules as well as Mn thin film deposited directly onto GaAs substrate. Smooth surface morphology with high surface Mn concentration can be obtained using MnAs (and in certain conditions, Mn3As) as diffusion source; different degrees of surface degradation are observed if otherwise sources are used as diffusion source. Data also show surface encapsulation and As overpressure have significant effects on the reaction between the source and GaAs and the Mn diffusion in GaAs.

2010 ◽  
Vol 20 (10) ◽  
pp. 501-507 ◽  
Author(s):  
Sang-Hun Beak ◽  
Jeong-Chul Lee ◽  
Sang-Hyun Park ◽  
Jin-Soo Song ◽  
Kyung-Hoon Yoon ◽  
...  

2011 ◽  
Vol 3 (4) ◽  
pp. 1148-1153 ◽  
Author(s):  
Eunice S. P. Leong ◽  
Yan Jun Liu ◽  
Bing Wang ◽  
Jinghua Teng

2012 ◽  
Vol 22 (38) ◽  
pp. 20465 ◽  
Author(s):  
Ranjusha R. ◽  
A. Sreekumaran Nair ◽  
Seeram Ramakrishna ◽  
Anjali P. ◽  
Sujith K. ◽  
...  

Author(s):  
Chih-Jen Hsiao ◽  
Chun-Kuan Liu ◽  
Sa-Hoang Huynh ◽  
Thien-Huu Ha Minh ◽  
Hung-Wei Yu ◽  
...  

2020 ◽  
Author(s):  
Maximilian Siller ◽  
Mika Minkkinen ◽  
Pamela Bogust ◽  
Alexander Jelinek ◽  
Jürgen Schatte ◽  
...  

2014 ◽  
Vol 602-603 ◽  
pp. 902-905
Author(s):  
Yong Jun Shen ◽  
Chuan Bin Wang ◽  
Ling Li ◽  
Qiang Shen ◽  
Lian Meng Zhang

Sr-doped lanthanum manganite (La1-xSrxMnO3) is characteristic of thermochromic, which can act as a smart thermal control material used in the variable-emittance devices. In the present study, La1-xSrxMnO3 thin films were prepared on MgO(100) substrates by pulsed laser deposition, and the effect of Sr-doping (x = 0 ~ 0.4) on the structure and infrared emissivity was investigated. Single-phased La1-xSrxMnO3 films with (100)-orientation were obtained, which showed a dense texture with smooth surface. The ratio of Mn4+/Mn3+ in the films was increased with increasing Sr doping, leading to the enhancement in double-exchange interaction and electrical conductivity. As a result, the phase transition from metal to insulator was observed with the increasing of test temperature. For the La0.8Sr0.2MnO3 thin film, a large value of emittance (De = 0.28) was obtained, indicating good variable-emittance by appropriate Sr doping.


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