Ultra fine MnO2 nanowire based high performance thin film rechargeable electrodes: Effect of surface morphology, electrolytes and concentrations

ABSTRACTData are presented showing the effects of diffusion sources, surface encapsulation, and As overpressure on Mn diffusion in GaAs. Four different Mn-containing sources are used, including Mn, Mn,MN3As, and MnAs granules as well as Mn thin film deposited directly onto GaAs substrate. Smooth surface morphology with high surface Mn concentration can be obtained using MnAs (and in certain conditions, Mn3As) as diffusion source; different degrees of surface degradation are observed if otherwise sources are used as diffusion source. Data also show surface encapsulation and As overpressure have significant effects on the reaction between the source and GaAs and the Mn diffusion in GaAs.

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Effect of Surface Morphology in ZnO:Al/Ag Back Reflectors for Flexible Silicon Thin Film Solar Cells on Light Scattering Properties

Korean Journal of Materials Research ◽

10.3740/mrsk.2010.20.10.501 ◽

2010 ◽

Vol 20 (10) ◽

pp. 501-507 ◽

Cited By ~ 2

Author(s):

Sang-Hun Beak ◽

Jeong-Chul Lee ◽

Sang-Hyun Park ◽

Jin-Soo Song ◽

Kyung-Hoon Yoon ◽

...

Keyword(s):

Thin Film ◽

Solar Cells ◽

Light Scattering ◽

Surface Morphology ◽

Thin Film Solar Cells ◽

Silicon Thin Film ◽

Back Reflectors ◽

Effect Of Surface

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Effect of surface morphology of Ni thin film on the growth of aligned carbon nanotubes by microwave plasma-enhanced chemical vapor deposition

Journal of Applied Physics ◽

10.1063/1.1314614 ◽

2000 ◽

Vol 88 (8) ◽

pp. 4898 ◽

Cited By ~ 73

Author(s):

Young Chul Choi ◽

Young Min Shin ◽

Seong Chu Lim ◽

Dong Jae Bae ◽

Young Hee Lee ◽

...

Keyword(s):

Thin Film ◽

Carbon Nanotubes ◽

Chemical Vapor Deposition ◽

Surface Morphology ◽

Vapor Deposition ◽

Microwave Plasma ◽

Chemical Vapor ◽

Aligned Carbon Nanotubes ◽

Effect Of Surface

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Effect of Surface Morphology on the Optical Properties in Metal−Dielectric−Metal Thin Film Systems

ACS Applied Materials & Interfaces ◽

10.1021/am101278q ◽

2011 ◽

Vol 3 (4) ◽

pp. 1148-1153 ◽

Cited By ~ 32

Author(s):

Eunice S. P. Leong ◽

Yan Jun Liu ◽

Bing Wang ◽

Jinghua Teng

Keyword(s):

Thin Film ◽

Optical Properties ◽

Surface Morphology ◽

Metal Thin Film ◽

Effect Of Surface

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High-resolution scanning electron microscopy of thin-film magnetic media of magnetic recording disk

Proceedings, annual meeting, Electron Microscopy Society of America ◽

10.1017/s0424820100131309 ◽

1992 ◽

Vol 50 (2) ◽

pp. 1334-1335

Author(s):

K. Ogura ◽

H. Nishioka ◽

N. Ikeo ◽

T. Kanazawa ◽

J. Teshima

Keyword(s):

Thin Film ◽

Fine Structure ◽

High Resolution ◽

Magnetic Recording ◽

High Performance ◽

Magnetic Hysteresis ◽

Grain Structure ◽

Magnetic Media ◽

Cross Sectional ◽

Resolution Observation

Structural appraisal of thin film magnetic media is very important because their magnetic characters such as magnetic hysteresis and recording behaviors are drastically altered by the grain structure of the film. However, in general, the surface of thin film magnetic media of magnetic recording disk which is process completed is protected by several-nm thick sputtered carbon. Therefore, high-resolution observation of a cross-sectional plane of a disk is strongly required to see the fine structure of the thin film magnetic media. Additionally, observation of the top protection film is also very important in this field.Recently, several different process-completed magnetic disks were examined with a UHR-SEM, the JEOL JSM 890, which consisted of a field emission gun and a high-performance immerse lens. The disks were cut into approximately 10-mm squares, the bottom of these pieces were carved into more than half of the total thickness of the disks, and they were bent. There were many cracks on the bent disks. When these disks were observed with the UHR-SEM, it was very difficult to observe the fine structure of thin film magnetic media which appeared on the cracks, because of a very heavy contamination on the observing area.

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The Structure and Properties of MoSi2 Thin Film in Mos Process

Proceedings, annual meeting, Electron Microscopy Society of America ◽

10.1017/s1431927600001379 ◽

1980 ◽

Vol 38 ◽

pp. 326-327

Author(s):

C.K. Wu ◽

P. Chang ◽

N. Godinho

Keyword(s):

Thin Film ◽

Integrated Circuits ◽

High Performance ◽

Large Scale ◽

Process Development ◽

Structure And Properties ◽

Metal Silicides ◽

High Oxidation ◽

Important Approach ◽

High Oxidation Resistance

Recently, the use of refractory metal silicides as low resistivity, high temperature and high oxidation resistance gate materials in large scale integrated circuits (LSI) has become an important approach in advanced MOS process development (1). This research is a systematic study on the structure and properties of molybdenum silicide thin film and its applicability to high performance LSI fabrication.

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