The Effect of Surface Morphology of Substrates Upon Electrical Stability of Nichrome Thin Film Resistors

1961 ◽  
Vol 8 (4) ◽  
pp. 160-162 ◽  
Author(s):  
W. Lasko ◽  
H. Roth
1991 ◽  
Vol 240 ◽  
Author(s):  
C. H. Wu ◽  
K. C. Hsieh

ABSTRACTData are presented showing the effects of diffusion sources, surface encapsulation, and As overpressure on Mn diffusion in GaAs. Four different Mn-containing sources are used, including Mn, Mn,MN3As, and MnAs granules as well as Mn thin film deposited directly onto GaAs substrate. Smooth surface morphology with high surface Mn concentration can be obtained using MnAs (and in certain conditions, Mn3As) as diffusion source; different degrees of surface degradation are observed if otherwise sources are used as diffusion source. Data also show surface encapsulation and As overpressure have significant effects on the reaction between the source and GaAs and the Mn diffusion in GaAs.


2010 ◽  
Vol 20 (10) ◽  
pp. 501-507 ◽  
Author(s):  
Sang-Hun Beak ◽  
Jeong-Chul Lee ◽  
Sang-Hyun Park ◽  
Jin-Soo Song ◽  
Kyung-Hoon Yoon ◽  
...  

2011 ◽  
Vol 3 (4) ◽  
pp. 1148-1153 ◽  
Author(s):  
Eunice S. P. Leong ◽  
Yan Jun Liu ◽  
Bing Wang ◽  
Jinghua Teng

2014 ◽  
Vol 1082 ◽  
pp. 34-37 ◽  
Author(s):  
Bin Wang ◽  
Zhen Guo Song ◽  
Qian Tao Cao

In this paper, TaN thin film were deposited on ceramic substrates by D.C. magnetron sputtering. The surface morphology of two types of TaN thin film resistors were investigated by SEM. The characteristics of the TaN thin film resistor was also studied. The key point was put on the TCR of the TaN thin film resistors. The resistors were trimmed by the autoxidation process and the anodic oxidation process, and the TCR values of about +21ppm/°C and-137.3ppm/°C in average have been achieved respectively.


2012 ◽  
Vol 22 (38) ◽  
pp. 20465 ◽  
Author(s):  
Ranjusha R. ◽  
A. Sreekumaran Nair ◽  
Seeram Ramakrishna ◽  
Anjali P. ◽  
Sujith K. ◽  
...  

1983 ◽  
Vol 10 (2-3) ◽  
pp. 81-85 ◽  
Author(s):  
S. Demolder ◽  
A. Van Calster ◽  
M. Vandendriessche

In this paper a sensitive measuring circuit is described for the measurement of current noise on high quality thin and thick film resistors. Measured data on resistors are presented and analysed.


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