scholarly journals Comparison of electrical properties of CuO/n-Si contacts with Cu/n-Si

2020 ◽  
Vol 0 (0) ◽  
Author(s):  
Reşit Özmenteş ◽  
Cabir Temirci
Keyword(s):  
Electrical Properties ◽  
Barrier Height ◽  
Ideality Factor ◽  
Series Resistance ◽  
Reference Sample ◽  
Forward Bias ◽  
Schottky Contact ◽  
Experimental Result ◽  
Current Voltage ◽  
Capacitance Voltage

AbstractIn this study, CuO/n-Si/Al heterojunction contacts were fabricated by thermal evaporation technique. Electrical characteristics of the samples were investigated with the current-voltage (I-V), capacitance-voltage/frequency (C-V/f), and conductance-voltage (G/V) measurements at room temperature. Also, Cu/n-Si/Al Schottky contact was produced as a reference sample to investigate the electrical properties of the samples. The values of ideality factor (n), barrier height (Φb) and series resistance (Rs) of the samples were calculated from the forward bias current-voltage (I-V) and reverse bias capacitance-voltage (C-V) characteristics. Also, for checking the consistency of the results, Cheung and Norde functions were used. The experimental result values of CuO/n-Si contact were compared with the values of the reference Cu/n-Si Schottky diode. It was observed that the values of the ideality factor and barrier height of the CuO/n-Si heterojunction were higher than those of the Cu/n-Si Schottky contact, while the series resistance was lower. Also, it has been observed that the value of capacitance decreased with increasing frequency and after a certain value of frequency it was almost constant. The ideality factor of CuO/n-Si/Al heterostructure is about 2.40 and so, it is not close to the ideal behavior.

Analysis of current–voltage and capacitance–voltage characteristics of Zr/p-Si Schottky diode with high series resistance

2020 ◽  
Vol 34 (10) ◽  
pp. 2050095
Author(s):  
Durmuş Ali Aldemir
Keyword(s):  
Barrier Height ◽  
Schottky Diode ◽  
Ideality Factor ◽  
Series Resistance ◽  
Zero Bias ◽  
Acceptor Concentration ◽  
Current Voltage ◽  
Capacitance Voltage ◽  
High Series ◽  
Contact Parameters

Zr/p-Si Schottky diode was fabricated by DC magnetic sputtering of Zr on p-Si. Zr rectifying contact gave a zero bias barrier height of 0.73 eV and an ideality factor of 1.33 by current–voltage measurement. The experimental zero bias barrier height was higher than the value predicted by metal-induced gap states (MIGSs) and electronegativity theory. The forward bias current was limited by high series resistance. The series resistance value of 9840 [Formula: see text] was determined from Cheung functions. High value of the series resistance was ascribed to low quality ohmic contact. In addition to Cheung functions, important contact parameters such as barrier height and series resistance were calculated by using modified Norde method. Re-evaluation of modified Norde functions was realized in the direction of the method proposed by Lien et al. [IEEE Trans. Electron Devices 31 (1984) 1502]. From the method, the series resistance and ideality factor values were found to be as 41.49 [Formula: see text] and 2.08, respectively. The capacitance–voltage characteristics of the diode were measured as a function of frequency. For a wide range of applied frequency, the contact parameters calculated from [Formula: see text]–[Formula: see text] curves did not exhibit frequency dependence. The barrier height value of 0.71 eV which was in close agreement with the value of zero bias barrier height was calculated from [Formula: see text]–[Formula: see text] plot at 1 MHz. The values of acceptor concentration obtained from [Formula: see text]–[Formula: see text] curves showed consistency with actual acceptor concentration of p-Si.

scholarly journals Electrical properties and the determination of interface state density from I-V, C-f and G-f measurements in Ir/Ru/n-InGaN Schottky barrier diode

2017 ◽  
Vol 51 (12) ◽  
pp. 1698
Author(s):  
R. Padma ◽  
V. Rajagopal Reddy
Keyword(s):  
Electrical Properties ◽  
Barrier Height ◽  
Series Resistance ◽  
Forward Bias ◽  
Interface State ◽  
State Density ◽  
Interface State Density ◽  
Current Voltage ◽  
Density Of Interface States

The electrical properties of the Ir/Ru Schottky contacts on n-InGaN have been investigated by current-voltage (I-V), capacitance-voltage (C-V), capacitance-frequency (C-f) and conductance-frequency (G-f) measurements. The obtained mean barrier height and ideality factor from I-V are 0.61 eV and 1.89. The built-in potential, doping concentration and barrier height values are also estimated from the C-V measurements and the corresponding values are 0.62 V, 1.20x1017 cm-3 and 0.79 eV, respectively. The interface state density (NSS) obtained from forward bias I-V characteristics by considering the series resistance (RS) values are lower without considering the series resistance (RS). Furthermore, the interface state density (NSS) and relaxation time (tau) are also calculated from the experimental C-f and G-f measurements. The NSS values obtained from the I-V characteristics are almost three orders higher than the NSS values obtained from the C-f and G-f measurements. The experimental results depict that NSS and tau are decreased with bias voltage. The frequency dependence of the series resistance (RS) is attributed to the particular distribution density of interface states. DOI: 10.21883/FTP.2017.12.45189.8340

Current-Voltage and Capacitance-Voltage Characteristics of Pd Schottky Diodes Fabricated on ZnO Grown along Zn- and O-Faces

2013 ◽  
Vol 313-314 ◽  
pp. 270-274
Author(s):  
M. Faisal ◽  
M. Asghar ◽  
Khalid Mahmood ◽  
Magnus Willander ◽  
O. Nur ◽  
...  
Keyword(s):  
Barrier Height ◽  
Ideality Factor ◽  
Doping Concentration ◽  
Series Resistance ◽  
Schottky Diodes ◽  
Thermionic Emission ◽  
Temperature Dependent ◽  
Current Voltage ◽  
Capacitance Voltage ◽  
Increasing Temperature

Temperature dependent current-voltage (I-V) and capacitance-voltage (C-V) measurements were utilized to understand the transport mechanism of Pd Schottky diodes fabricated on Zn- and O-faces of ZnO. From I-V measurements, in accordance with the thermionic emission mechanism theory, it was found that the series resistance Rsand the ideality factor n were strongly temperature dependent that decreased with increasing temperature for both the faces (Zn and O-face) of ZnO revealing that the thermionic emission is not the dominant process. The barrier height øB(I-V)increased with increasing temperature for both faces. The measured values of ideality factor, barrier height and series resistance for Zn- and O-faces at room temperature were 4.4, 0.60 eV, 217 Ω and 2.8, 0.49 eV, 251 Ω respectively. The capacitance-voltage (C–V) measurements were used to determine the doping concentration Nd, the built-in-potential Vbi, and the barrier height øB(C-V). The doping concentration was found to be decreased with increasing depth. The barrier height øB(C-V)calculated for O-polar and Zn-polar faces decreases with increasing temperature. The values of barrier height øB(C-V)determined from C-V measurements were found higher than the values of barrier height øB(I-V). Keeping in view the calculated values of ideality factor, barrier height, and series resistance shows that O-polar face is qualitatively better than Zn-polar face.

scholarly journals The effects of electron irradiation and thermal dependence measurements on 4H-Sic Schottky diode

2017 ◽  
Vol 51 (12) ◽  
pp. 1721
Author(s):  
Sabuhi Ganiyev ◽  
M. Azim Khairi ◽  
D. Ahmad Fauzi ◽  
Yusof Abdullah ◽  
N.F. Hasbullah
Keyword(s):  
Barrier Height ◽  
Ideality Factor ◽  
Elevated Temperatures ◽  
Series Resistance ◽  
Schottky Diodes ◽  
High Energy ◽  
Bias Current ◽  
N Saturation ◽  
Saturation Current ◽  
Current Voltage

In this paper the effects of high energy (3.0 MeV) electrons irradiation over a dose ranges from 6 to 15 MGy at elevated temperatures 298 to 448 K on the current-voltage characteristics of 4H-SiC Schottky diodes were investigated. The experiment results show that after irradiation with 3.0 MeV forward bias current of the tested diodes decreased, while reverse bias current increased. The degradation of ideality factor, n, saturation current, Is, and barrier height, Phib, were not noticeable after the irradiation. However, the series resistance, Rs, has increased significantly with increasing radiation dose. In addition, temperature dependence current-voltage measurements, were conducted for temperature in the range of 298 to 448 K. The Schottky barrier height, saturation current, and series resistance, are found to be temperature dependent, while ideality factor remained constant. DOI: 10.21883/FTP.2017.12.45193.8646

Electrical Properties of Inhomogeneous Pt/GaN Schottky Barrier

2008 ◽  
Vol 600-603 ◽  
pp. 1341-1344 ◽  
Author(s):  
Fabrizio Roccaforte ◽  
Ferdinando Iucolano ◽  
Filippo Giannazzo ◽  
Salvatore di Franco ◽  
Valeria Puglisi ◽  
...  
Keyword(s):  
Electrical Properties ◽  
Temperature Dependence ◽  
Schottky Barrier ◽  
Barrier Height ◽  
Ideality Factor ◽  
Schottky Contacts ◽  
Electrical Behavior ◽  
Atomic Force ◽  
Current Voltage ◽  
Local Current

In this work, the electrical properties of Pt/GaN Schottky contacts were studied. The temperature dependence of the barrier height and ideality factor, and the low experimental value of the Richardson’s constant, were discussed considering the formation of an inhomogenous Schottky barrier. Local current-voltage measurements on Pt/GaN contact, performed with a conductive atomic force microscope, demonstrated a Gaussian distribution of the local barrier height values and allowed to monitor the degree of inhomogeneity of the barrier. The presence of defects, terminating on the bare GaN surface, was correlated with the electrical behavior of the inhomogeneous barrier.

PERFORMANCE COMPARISON OF p–n JUNCTION DIODES USING ZINC OXIDE AND COPPER PHTHALOCYANINE HYBRID NANOCOMPOSITES AND BILAYER HETEROSTRUCTURES

NANO ◽  
2014 ◽  
Vol 09 (06) ◽  
pp. 1450062 ◽  
Author(s):  
N. PADMA ◽  
MANORANJAN GHOSH ◽  
SHASHWATI SEN ◽  
R. TEWARI
Keyword(s):  
Zinc Oxide ◽  
Electrical Properties ◽  
Barrier Height ◽  
Ideality Factor ◽  
Nanocomposite Film ◽  
Copper Phthalocyanine ◽  
Series Resistance ◽  
Hybrid Nanocomposites ◽  
Nanocomposite Films ◽  
Heterojunction Devices

Nanocomposites of n-type Zinc Oxide ( ZnO ) and p-type copper phthalocyanine ( CuPc ) were synthesized using solution route and the electrical properties of heterojunctions of ZnO and CuPc in the nanocomposite film was studied. For comparison, electrical properties of bilayer heterojunction devices using ZnO nanostructure drop cast film and thermally evaporated CuPc were also studied. Rectification ratio (RR) of about 28 and 5.5 was obtained at 4 V for devices with nanocomposite film and bilayer heterojunctions indicating improved formation of p–n junction characteristics for nanocomposite films. Values of ideality factor, barrier height at the p–n junction interface and series resistance were estimated using different methods like semilog plots, Cheung and Norde's methods. Ideality factor estimated from semilog plots and Cheung's methods were found to be higher than unity indicating deviation from ideal diode behavior. Barrier height estimated from different methods was about 0.7 eV. Series resistance measured using Cheung and Norde's methods were found to be about 92 KΩ and 21 KΩ, respectively. Bilayer heterojunction devices exhibited much higher series resistance, ideality factor and barrier height as estimated using all the above-mentioned methods as compared to the devices with nanocomposite film. The above results indicate intimate mixing and improved interface between ZnO and CuPc in the in situ synthesized nanocomposite film thereby offering improved p–n junction characteristics.

scholarly journals Effect of Gas Annealing on the Electrical Properties of Ni/AlN/SiC

Micromachines ◽  
2021 ◽  
Vol 12 (3) ◽  
pp. 283
Author(s):  
Dong-Hyeon Kim ◽  
Michael A. Schweitz ◽  
Sang-Mo Koo
Keyword(s):  
Electrical Properties ◽  
Schottky Barrier ◽  
Barrier Height ◽  
Ideality Factor ◽  
Chemical Bonding ◽  
Photoelectron Spectroscopy ◽  
X Ray ◽  
Bonding Structure ◽  
Current Voltage ◽  
Direct Indication

It is shown in this work that annealing of Schottky barrier diodes (SBDs) in the form of Ni/AlN/SiC heterojunction devices in an atmosphere of nitrogen and oxygen leads to a significant improvement in the electrical properties of the structures. Compared to the non-annealed device, the on/off ratio of the annealed SBD devices increased by approximately 100 times. The ideality factor, derived from the current-voltage (IV) characterization, decreased by a factor of ~5.1 after annealing, whereas the barrier height increased from ~0.52 to 0.71 eV. The bonding structure of the AlN layer was characterized by X-ray photoelectron spectroscopy. Examination of the N 1 s and O 1 s peaks provided direct indication of the most prevalent chemical bonding states of the elements.

scholarly journals Effect of Annealing Atmosphere on the Diode Behaviour of ZnO/Si Heterojunction

2021 ◽  
Author(s):  
Sadia Muniza Faraz ◽  
Syed Riaz un Nabi Jafri ◽  
Zarreen Tajvar ◽  
Naveed ul Hassan Alvi ◽  
Qamar-ul Wahab ◽  
...  
Keyword(s):  
Ideality Factor ◽  
Room Temperature ◽  
Series Resistance ◽  
Zno Nanorods ◽  
Annealing Atmosphere ◽  
Electrical Characteristics ◽  
Current Voltage ◽  
Capacitance Voltage ◽  
Growth Method ◽  
Heterojunction Diodes

The effect of thermal annealing atmosphere on the electrical characteristics of Zinc oxide (ZnO) nanorods/p-Silicon (Si) diodes is investigated. ZnO nanorods are grown by low-temperature aqueous solution growth method and annealed in Nitrogen and Oxygen atmosphere. As-grown and annealed nanorods are studied by scanning electron microscopy (SEM) and photoluminescence (PL) spectroscopy. Electrical characteristics of ZnO/Si heterojunction diodes are studied by current-voltage (I-V) and capacitance-voltage (C-V) measurements at room temperature. Improvements in rectifying behaviour, ideality factor, carrier concentration, and series resistance are observed after annealing. The ideality factor of 4.4 for as-grown improved to 3.8 and for Nitrogen and Oxygen annealed improved to 3.5 nanorods diodes. The series resistances decreased from 1.6 to 1.8 times after annealing. An overall improved behaviour is observed for oxygen annealed heterojunction diodes. The study suggests that by controlling the ZnO nanorods annealing temperatures and atmospheres the electronic and optoelectronic properties of ZnO devices can be improved.

scholarly journals Negative series resistance and photo-response properties of Au/PPY-MWCNTs composite /TiO2/Al2O3/n-Si/Al photodiode

2021 ◽  
Author(s):  
A. Ashery ◽  
A. E. H. Gaballah ◽  
Emad M. Ahmed
Keyword(s):  
Electrical Properties ◽  
Barrier Height ◽  
Ideality Factor ◽  
Series Resistance ◽  
Systematic Analysis ◽  
High Frequencies ◽  
Structure Response ◽  
Novel Approach ◽  
Photo Response ◽  
The Relationship

Abstract The paper addresses a novel approach concerning the appearance of negative series resistance (Rs) at high frequencies for both temperatures and voltages. Most of the previous studies have focused on the relationship between voltage and current (I - V) to determine the value of Rs using several methods. By measuring capacitance and conductance as a function of voltage, we were able to develop a systematic analysis of series resistance. At high frequencies of 2×107, 107 Hz, Rs has negative values however, at frequency 106Hz it takes both positive and negative values, whilst from (105 - 10) Hz it has positive values. Here in this article, we synthesized Au/PPY-MWCNTs/TiO2/Al2O3/n-Si/Al structure which can be used in a variety of applications such as supercapacitors, and diodes. We investigated the electrical properties such as ideality factor (n), barrier height (фb), series resistance using several approaches such as conventional, Chueng, and Nord methods. The structure has shown rectification with a good response to daylight illumination. The structure response to daylight illumination indicates that photodiodes have the potential to be used as solar detectors.

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