Compensation Effects in 7 MeV C Irradiated n-Doped 4H-SiC

2008 ◽  
Vol 600-603 ◽  
pp. 619-622 ◽  
Author(s):  
Gaetano Izzo ◽  
Grazia Litrico ◽  
Lucia Calcagno ◽  
Gaetano Foti ◽  
Francesco La Via
Keyword(s):  
Electrical Properties ◽  
Series Resistance ◽  
Schottky Diodes ◽  
Free Carrier ◽  
Forward Current ◽  
Current Voltage ◽  
Capacitance Voltage ◽  
Before And After ◽  
Nitrogen Concentrations ◽  
Current Voltage Characteristics

The defects produced by irradiation with 7 MeV C+ induce a change in the electrical properties of 4H-SiC Schottky diodes. Capacitance-voltage and Current-voltage characteristics of the diodes fabricated in epilayers doped with different nitrogen concentrations were monitored before and after irradiation with different fluences. The Capacitance-voltage curves show free carrier compensation after low fluence irradiation and it was found that the reduction of carriers per ion induced vacancy increases with nitrogen content. The forward current-voltage characteristics of the diodes show an increase in the series resistance after irradiation. This change is mainly related to the high compensation occurring around the end of the ion range.

Anomalous Scatter of Forward Current-Voltage Characteristics of He+-Irradiated Ni/4H-SiC Schottky Diodes

2016 ◽  
Vol 858 ◽  
pp. 749-752 ◽  
Author(s):  
Anatoly M. Strel'chuk ◽  
Viktor V. Zelenin ◽  
Alexei N. Kuznetsov ◽  
Joseph Tringe ◽  
Albert V. Davydov ◽  
...  
Keyword(s):  
Series Resistance ◽  
Degradation Mechanism ◽  
Schottky Diodes ◽  
Defect Structures ◽  
Induced Current ◽  
Forward Current ◽  
Current Voltage ◽  
Before And After ◽  
Current Voltage Characteristics

A study of forward current-voltage characteristics of Ni/4H-SiC Schottky diodes (SDs) before and after irradiation with He+ ions revealed features that characterize defect structures and reveal the degradation mechanism of the diodes. These features are the presence of excess currents of certain type in the unirradiated SDs, their appearance in forward-biased originally ideal SDs, and a >10 orders of magnitude scatter of the series resistance of the SDs upon their irradiation with He+ ions. A model of localized defect-induced current paths (shunts) in the form of unintentionally produced SDs with the substrate is suggested.

Effect of series resistance on the forward current-voltage characteristics of Schottky diodes in the presence of interfacial layer

1996 ◽  
Vol 39 (1) ◽  
pp. 83-87 ◽  
Author(s):  
Enise Ayyildiz ◽  
Abdulmecit Türüt ◽  
Hasan Efeoğlu ◽  
Sebahattin Tüzemen ◽  
Mustafa Sağlam ◽  
...  
Keyword(s):  
Interfacial Layer ◽  
Series Resistance ◽  
Schottky Diodes ◽  
Forward Current ◽  
Current Voltage ◽  
Current Voltage Characteristics

New Method for Improving the Electrical Characteristics of P-N Junction Diode

2011 ◽  
Vol 378-379 ◽  
pp. 606-609 ◽  
Author(s):  
Itsara Srithanachai ◽  
Surada Ueamanapong ◽  
Amporn Poyai ◽  
Surasak Niemcharoen
Keyword(s):  
Carrier Lifetime ◽  
Series Resistance ◽  
Device Performance ◽  
Electrical Characteristics ◽  
X Ray ◽  
Forward Current ◽  
Current Voltage ◽  
Capacitance Voltage ◽  
Current Voltage Characteristics ◽  
Junction Diode

This paper investigates the effect of soft X-ray irradiation various energy and times on P-N junction diodes. X-ray energy irradiated on P-N junction diode with 55 and 70 keV with various time in the range 5-50 sec. After irradiations were study on the current-voltage (I-V) characteristics and capacitance-voltage (C-V) characteristics. Leakages current after irradiated by X-ray are not change, while forward current are increase about 3 orders. The change of current-voltage characteristics can analyze by many parameter such as carrier lifetime and series resistance. Capacitance-voltage characteristics after irradiation are not change. The results show that soft X-ray technique can be improving performance of the P-N junction diodes. These techniques are importance to use for improving device performance in industry work.

Effect of Thermal Annealing on La2O3 Films Grown by Plasma Enhanced Atomic Layer Deposition

2015 ◽  
Vol 1088 ◽  
pp. 107-111
Author(s):  
Jian Shuang Liu ◽  
Fang Fang Zhu ◽  
Fei Lu ◽  
Lin Zhang
Keyword(s):  
Atomic Layer Deposition ◽  
Atomic Layer ◽  
Deposition Process ◽  
Flat Band ◽  
Interface Reactions ◽  
Layer Deposition ◽  
Current Voltage ◽  
Capacitance Voltage ◽  
Before And After ◽  
Current Voltage Characteristics

A plasma enhanced atomic layer deposition process has been demonstrated for Lanthanum oxide films using La (thd)3 precursor and oxygen plasma. The chemical and electrical properties of La2O3 ultra-thin films on Si (100) substrates before and after post-annealing in N2 ambient have been investigated. X-ray photoelectron spectroscopic revealed that interface reactions take place after annealing process which lead to oxygen insufficiency, as well as the balance band offset decreases with the increase of annealing temperature. The capacitance-voltage and current-voltage characteristics show La2O3 capacitors annealed at 900 °C have negligible hysteresis, smaller interface trap density in comparison with as-deposited samples, but larger flat band voltage and higher gate-leakage current density due to the appearance of oxygen vacancy in the La2O3 films.

Electrical Characterisation of Epitaxial (100) CoSi2/Si Contacts Obtained Using a Ti/Co Bilayer

1993 ◽  
Vol 320 ◽  
Author(s):  
A. Lauwers ◽  
A. Vercaemst ◽  
M. Van Hove ◽  
K. Kyllesbech Larsen ◽  
R. Verbeeck ◽  
...  
Keyword(s):  
Solid State ◽  
Electrical Properties ◽  
Low Temperature ◽  
Solid State Reaction ◽  
Schottky Diodes ◽  
Current Voltage ◽  
Capacitance Voltage ◽  
Bimetallic Layer ◽  
Temperature Resistivity

ABSTRACTIn this paper the electrical properties of epitaxial CoSi2 on Si obtained by solid-state reaction of a Ti/Co bimetallic layer are investigated. Low temperature resistivity, magnetoresistance and Hall data are presented. The CoSi2ISi Schottky diodes are characterised by current - voltage and capacitance - voltage measurements at temperatures varying between - 100°C and 60°C.

scholarly journals Comparison of electrical properties of CuO/n-Si contacts with Cu/n-Si

2020 ◽  
Vol 0 (0) ◽  
Author(s):  
Reşit Özmenteş ◽  
Cabir Temirci
Keyword(s):  
Electrical Properties ◽  
Barrier Height ◽  
Ideality Factor ◽  
Series Resistance ◽  
Reference Sample ◽  
Forward Bias ◽  
Schottky Contact ◽  
Experimental Result ◽  
Current Voltage ◽  
Capacitance Voltage

AbstractIn this study, CuO/n-Si/Al heterojunction contacts were fabricated by thermal evaporation technique. Electrical characteristics of the samples were investigated with the current-voltage (I-V), capacitance-voltage/frequency (C-V/f), and conductance-voltage (G/V) measurements at room temperature. Also, Cu/n-Si/Al Schottky contact was produced as a reference sample to investigate the electrical properties of the samples. The values of ideality factor (n), barrier height (Φb) and series resistance (Rs) of the samples were calculated from the forward bias current-voltage (I-V) and reverse bias capacitance-voltage (C-V) characteristics. Also, for checking the consistency of the results, Cheung and Norde functions were used. The experimental result values of CuO/n-Si contact were compared with the values of the reference Cu/n-Si Schottky diode. It was observed that the values of the ideality factor and barrier height of the CuO/n-Si heterojunction were higher than those of the Cu/n-Si Schottky contact, while the series resistance was lower. Also, it has been observed that the value of capacitance decreased with increasing frequency and after a certain value of frequency it was almost constant. The ideality factor of CuO/n-Si/Al heterostructure is about 2.40 and so, it is not close to the ideal behavior.

Electrical Properties of Schottky Junctions on homoepitaxial flame grown diamond

1992 ◽  
Vol 242 ◽  
Author(s):  
J.W. Glesener ◽  
A.A. Morrish ◽  
K.A. Snail
Keyword(s):  
Electrical Properties ◽  
Ohmic Contact ◽  
Ideality Factor ◽  
Schottky Diodes ◽  
Turbulent Flame ◽  
Boron Doped Diamond ◽  
Acceptor Concentration ◽  
Boron Doped ◽  
Current Voltage ◽  
Capacitance Voltage

ABSTRACTSchottky diodes were fabricated from boron doped diamond grown in a turbulent flame. The substrates used were type IIa diamond (100) crystals 1.5 mm in diameter and.25 mm thick. A p/p+ structure was deposited using the p+ layer as an ohmic contact. Current-voltage (I-V) and capacitance-voltage (C-V) measurements were made on the finished devices. An ideality factor of 1.8 was obtained from the I-V characteristics. Doping levels from C-V measurements indicate an acceptor concentration on the order of 5 × 1017/cm3.

Current-Voltage and Capacitance-Voltage Characteristics of Pd Schottky Diodes Fabricated on ZnO Grown along Zn- and O-Faces

2013 ◽  
Vol 313-314 ◽  
pp. 270-274
Author(s):  
M. Faisal ◽  
M. Asghar ◽  
Khalid Mahmood ◽  
Magnus Willander ◽  
O. Nur ◽  
...  
Keyword(s):  
Barrier Height ◽  
Ideality Factor ◽  
Doping Concentration ◽  
Series Resistance ◽  
Schottky Diodes ◽  
Thermionic Emission ◽  
Temperature Dependent ◽  
Current Voltage ◽  
Capacitance Voltage ◽  
Increasing Temperature

Temperature dependent current-voltage (I-V) and capacitance-voltage (C-V) measurements were utilized to understand the transport mechanism of Pd Schottky diodes fabricated on Zn- and O-faces of ZnO. From I-V measurements, in accordance with the thermionic emission mechanism theory, it was found that the series resistance Rsand the ideality factor n were strongly temperature dependent that decreased with increasing temperature for both the faces (Zn and O-face) of ZnO revealing that the thermionic emission is not the dominant process. The barrier height øB(I-V)increased with increasing temperature for both faces. The measured values of ideality factor, barrier height and series resistance for Zn- and O-faces at room temperature were 4.4, 0.60 eV, 217 Ω and 2.8, 0.49 eV, 251 Ω respectively. The capacitance-voltage (C–V) measurements were used to determine the doping concentration Nd, the built-in-potential Vbi, and the barrier height øB(C-V). The doping concentration was found to be decreased with increasing depth. The barrier height øB(C-V)calculated for O-polar and Zn-polar faces decreases with increasing temperature. The values of barrier height øB(C-V)determined from C-V measurements were found higher than the values of barrier height øB(I-V). Keeping in view the calculated values of ideality factor, barrier height, and series resistance shows that O-polar face is qualitatively better than Zn-polar face.

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