Molecular Beam Epitaxial Growth of Cdl-xznxTe Matched to HgCdTe Alloys

1986 ◽  
Vol 90 ◽  
Author(s):  
N. Magnea ◽  
F. Dal'bo ◽  
J. L. Pautrat ◽  
A. Million ◽  
L. Di Cioccio ◽  
...  
Keyword(s):  
Electron Microscopy ◽  
Transmission Electron Microscopy ◽  
Molecular Beam ◽  
Bulk Material ◽  
Strained Layers ◽  
Molecular Beam Epitaxial ◽  
Transmission Electron ◽  
Molecular Beam Epitaxial Growth ◽  
Thick Layers

ABSTRACTCD1−xZnxTe alloys of various composition have been grown by the Molecular Beam Epitaxy Technique and characterized by Transmission Electron Microscopy. C(V) measurements and photoluminescence spectroscopy techniques. The quality of the thick layers is comparable to that of bulk material. Thin strained layers have also been grown whose interfaces are structurally good. The recombination within a CdTe well confined between Cd1−xZnxTe barriers is dominated by intrinsic processes.

A transmission electron microscopy investigation of SiC films grown on Si(111) substrates by solid-source molecular beam epitaxy

1998 ◽  
Vol 13 (12) ◽  
pp. 3571-3579 ◽  
Author(s):  
U. Kaiser ◽  
S. B. Newcomb ◽  
W. M. Stobbs ◽  
M. Adamik ◽  
A. Fissel ◽  
...  
Keyword(s):  
Electron Microscopy ◽  
Transmission Electron Microscopy ◽  
Molecular Beam ◽  
Growth Parameters ◽  
Force Microscopy ◽  
Molecular Beam Epitaxial ◽  
Atomic Force ◽  
Transmission Electron ◽  
Microscopy Investigation ◽  
Sic Films

The effects of different growth parameters on the microstructure of the SiC films formed during simultaneous two-source molecular-beam-epitaxial (MBE) deposition have been investigated. Substrate temperatures as low as 750–900 °C have been used. The relationship between a number of different growth morphologies and deposition conditions has been established. The formation of single-crystal 3C films has been found to occur at low growth rates but within a limited Si: C adatom ratio. A combination of transmission electron microscopy (TEM) and atomic force microscopy (AFM) has been used to examine the different films, and the results of these investigations are described.

Molecular Beam Epitaxial Growth of Gaas on Silicon with Buried Implanted Oxides

1987 ◽  
Vol 107 ◽  
Author(s):  
K. Das ◽  
T.P. Humphreys ◽  
J.B. Posthill ◽  
N. Parikh ◽  
J. Tarn ◽  
...  
Keyword(s):  
Electron Microscopy ◽  
Molecular Beam ◽  
Antiphase Domain ◽  
Molecular Beam Epitaxial ◽  
Transmission Electron ◽  
Domain Boundaries ◽  
First Results ◽  
Direct Growth ◽  
Molecular Beam Epitaxial Growth ◽  
Microscopy Techniques

AbstractWe report the first results of direct growth of GaAs by molecular beam epitaxy on nominally (100) oriented silicon with buried implanted oxides. Rutherford backscattering and transmission electron microscopy techniques have been used to characterize these layers. The formation of hillocks and a uniform layer of GaAs in the intervening regions between hillocks have been observed. Microtwins, dislocations and antiphase domain boundaries are the predominant defects observed in these layers.

TEM Studies of Alloy Clustering in InAlAs Strained Layers

1991 ◽  
Vol 240 ◽  
Author(s):  
F. Peiro ◽  
A. Cornet ◽  
J. R. Morante ◽  
S. A. Clark ◽  
R. H. Williams
Keyword(s):  
Electron Microscopy ◽  
Transmission Electron Microscopy ◽  
Molecular Beam Epitaxy ◽  
Molecular Beam ◽  
Growth Parameters ◽  
Strained Layers ◽  
Transmission Electron ◽  
Quasiperiodic Structure ◽  
Sample Characteristics ◽  
Inp Substrates

ABSTRACTTransmission electron microscopy studies have been performed to characterise InxAl1−xAS layers grown by Molecular Beam Epitaxy on (100) InP substrates. The first observations of compositional nonuniformities in strained InAlAs layers are reported. The coarse quasiperiodic structure present in each sample has been found to be dependent upon the growth parameters and the sample characteristics such as strain, thickness and x value.

Molecular Beam Epitaxial Growth and Characterization of GaAs on Sapphire and Silicon-on-Sapphire Substrates

1988 ◽  
Vol 144 ◽  
Author(s):  
T. P. Humphreys ◽  
C. J. Miner ◽  
N. R. Parikh ◽  
K. Das ◽  
M. K. Summerville ◽  
...  
Keyword(s):  
Electron Microscopy ◽  
Molecular Beam ◽  
Optical Analysis ◽  
Molecular Beam Epitaxial ◽  
Sapphire Substrates ◽  
Transmission Electron ◽  
Current Voltage ◽  
Semiconductor Contacts ◽  
Molecular Beam Epitaxial Growth

ABSTRACTEpitaxial GaAs layers have been grown by molecular beam epitaxy on (1012) sapphire and silicon-on-sapphire substrates. The grown layers were characterized by optical and transmission electron microscopy; Rutherford backscattering/channeling of 2.1 MeV He+ ions; Raman spectroscopy; Hall mobility measurements; photoluminescence spectroscopy and current-voltage measurements from metal-semiconductor contacts. The extensive microstructural, electrical and optical analysis of the GaAs layers indicates that the films deposited on silicon-on-sapphire are superior to those grown directly on (1012) sapphire substrates.

Tem Study of Temperature Influence on The Crystalline Quality of InGaAs/Si Epilayers

1992 ◽  
Vol 263 ◽  
Author(s):  
A. Vila ◽  
A. Cornet ◽  
J.R. Morante ◽  
D.I. Westwood
Keyword(s):  
Electron Microscopy ◽  
Transmission Electron Microscopy ◽  
Molecular Beam ◽  
Temperature Influence ◽  
X Ray Diffraction ◽  
Double Crystal ◽  
X Ray ◽  
Transmission Electron ◽  
Different Temperatures

ABSTRACTA Transmission Electron Microscopy (TEM) study of In0.53Ga0.47As Molecular Beam Epitaxy films grown at different temperatures onto misoriented Si (100) substrates is presented. The evolution of the density of the different kind of defects is discussed as a function of the growth temperature in the range between 200 and 500° C. The results are compared with the characterization techniques of Double Crystal X-Ray Diffraction and Hall effect.

Defect Structures in Heteroepitaxial InAs/GaAs and GaAs/InAs Grown by Atomic Layer Molecular Beam Epitaxy

1992 ◽  
Vol 262 ◽  
Author(s):  
S. I. Molina ◽  
G. Aragon ◽  
R. Garcia
Keyword(s):  
Electron Microscopy ◽  
Transmission Electron Microscopy ◽  
Molecular Beam Epitaxy ◽  
Molecular Beam ◽  
Atomic Layer ◽  
Defect Structures ◽  
Planar Defects ◽  
Transmission Electron

ABSTRACTA Transmission Electron Microscopy (TEM) study on ALMBE grown InAs/GaAs (001) is presented. The density and the types of defects contained in InAs and GaAs layers are clearly different. A relation between the planar defects in these layers and the compressive and extensive nature of the growth for each layer is found. Atomic Layer Molecular Beam Epitaxy (ALMBE) grown InAs layers possess a better quality of defects than other InAs layers grown on GaAs (001) by conventional MBE. Several ways of nucleation are presented as possible for explaining the existence of the different defects found in the studied heterostructure.

Dependence of the Defects Present in InAlAs/InP on the Substrate Temperature

1991 ◽  
Vol 240 ◽  
Author(s):  
F. Peiro ◽  
A. Cornet ◽  
A. Herms ◽  
J. R. Morante ◽  
A. Georgakilas ◽  
...  
Keyword(s):  
Electron Microscopy ◽  
Transmission Electron Microscopy ◽  
Substrate Temperature ◽  
Molecular Beam ◽  
Stacking Faults ◽  
Structural Defects ◽  
Threading Dislocations ◽  
Transmission Electron ◽  
Inp Substrates

ABSTRACTThe crystalline quality of InAlAs layers, grown by Molecular Beam Epitaxy on (100) InP substrates, has been investigated by Transmission Electron Microscopy in order to study the influence of InAlAs growth temperature (Tg) on the density of structural defects present in the layers. Tg was varied from 300°C up to 530°C. The density of stacking faults and threading dislocations drops dramatically as Tg increas

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