TEM Studies of Alloy Clustering in InAlAs Strained Layers

1991 ◽  
Vol 240 ◽  
Author(s):  
F. Peiro ◽  
A. Cornet ◽  
J. R. Morante ◽  
S. A. Clark ◽  
R. H. Williams
Keyword(s):  
Electron Microscopy ◽  
Transmission Electron Microscopy ◽  
Molecular Beam Epitaxy ◽  
Molecular Beam ◽  
Growth Parameters ◽  
Strained Layers ◽  
Transmission Electron ◽  
Quasiperiodic Structure ◽  
Sample Characteristics ◽  
Inp Substrates

ABSTRACTTransmission electron microscopy studies have been performed to characterise InxAl1−xAS layers grown by Molecular Beam Epitaxy on (100) InP substrates. The first observations of compositional nonuniformities in strained InAlAs layers are reported. The coarse quasiperiodic structure present in each sample has been found to be dependent upon the growth parameters and the sample characteristics such as strain, thickness and x value.

Vertical self-organization of Ge1−xMnx nanocolumn multilayers grown on Ge(001) substrates

2016 ◽  
Vol 30 (20) ◽  
pp. 1650269 ◽  
Author(s):  
Thi Giang Le ◽  
Minh Tuan Dau
Keyword(s):  
Electron Microscopy ◽  
Transmission Electron Microscopy ◽  
High Resolution ◽  
Molecular Beam Epitaxy ◽  
Elastic Constant ◽  
Structural Properties ◽  
Molecular Beam ◽  
Self Organization ◽  
Transmission Electron ◽  
2D Model

High-resolution transmission electron microscopy (HR-TEM) has been used to investigate the structural properties of GeMn/Ge nanocolumns multilayer samples grown on Ge(001) substrates by means of molecular beam epitaxy (MBE) system. Four bilayers with the spacer thickness in the range between 6 nm and 15 nm and 10 periods of bilayers of Ge[Formula: see text]Mn[Formula: see text]/Ge nanocolumn are presented. A simplified 2D model based on the theory of elastic constant interactions has been used to provide reasonable explanations to the vertical self-organization of GeMn nanocolumns in multilayers.

Asymmetric Cracking in Znse/ZnSxSel−x Superlattices Grown by Molecular Bean Epitaxy

1987 ◽  
Vol 102 ◽  
Author(s):  
Richard J. Dalby ◽  
John Petruzzello
Keyword(s):  
Electron Microscopy ◽  
Transmission Electron Microscopy ◽  
Thermal Expansion ◽  
Molecular Beam Epitaxy ◽  
Molecular Beam ◽  
Lattice Mismatch ◽  
Sulfur Concentration ◽  
Transmission Electron ◽  
Theoretical Predictions ◽  
Superlattice Layer

ABSTRACTOptical and transmission electron microscopy have been used to study cracks appearing in ZnSe/ZnSxSe1−x (x ∼ 0.38) superlattices grown by Molecular Beam Epitaxy. It Is shown that when a fracture occurs it is confined, in most cases, to the superlattice and propagates along <011> cleavage directions in these <001> oriented epilayers. Cracks were not observed in all superlattices and their onset is discussed in relation to sulfur concentration, overall superlattice height, individual superlattice layer thicknesses, and stress, tensile or compressive, due to lattice mismatch and thermal expansion differences between buffer layer and superlattice. It was found that by adjusting the controllable parameters, cracks in the superlattices could be eliminated. Orientation and density of these features have been related to asynnmetric cracking associated with the zincblende structure of these II-VI materials. Experimental results are shown to be in agreement with theoretical predictions of critical heights for the onset of cracking.

Transmission electron microscopy of GaN columnar nanostructures grown by molecular beam epitaxy

2001 ◽  
Vol 43 (1) ◽  
pp. 151-156 ◽  
Author(s):  
V. V. Mamutin ◽  
N. A. Cherkashin ◽  
V. A. Vekshin ◽  
V. N. Zhmerik ◽  
S. V. Ivanov
Keyword(s):  
Electron Microscopy ◽  
Transmission Electron Microscopy ◽  
Molecular Beam Epitaxy ◽  
Molecular Beam ◽  
Transmission Electron

A transmission electron microscopy investigation of SiC films grown on Si(111) substrates by solid-source molecular beam epitaxy

1998 ◽  
Vol 13 (12) ◽  
pp. 3571-3579 ◽  
Author(s):  
U. Kaiser ◽  
S. B. Newcomb ◽  
W. M. Stobbs ◽  
M. Adamik ◽  
A. Fissel ◽  
...  
Keyword(s):  
Electron Microscopy ◽  
Transmission Electron Microscopy ◽  
Molecular Beam ◽  
Growth Parameters ◽  
Force Microscopy ◽  
Molecular Beam Epitaxial ◽  
Atomic Force ◽  
Transmission Electron ◽  
Microscopy Investigation ◽  
Sic Films

The effects of different growth parameters on the microstructure of the SiC films formed during simultaneous two-source molecular-beam-epitaxial (MBE) deposition have been investigated. Substrate temperatures as low as 750–900 °C have been used. The relationship between a number of different growth morphologies and deposition conditions has been established. The formation of single-crystal 3C films has been found to occur at low growth rates but within a limited Si: C adatom ratio. A combination of transmission electron microscopy (TEM) and atomic force microscopy (AFM) has been used to examine the different films, and the results of these investigations are described.

A Study of the Defect Structure in GaAS1−xPx/GaAs AS x<0.25

1993 ◽  
Vol 317 ◽  
Author(s):  
G. Aragon ◽  
M.J. De Castro ◽  
S.I. Molina ◽  
Y. Gonzalez ◽  
L. Gonzalez ◽  
...  
Keyword(s):  
Electron Microscopy ◽  
Transmission Electron Microscopy ◽  
Molecular Beam Epitaxy ◽  
Defect Structure ◽  
Gaas Substrate ◽  
Molecular Beam ◽  
Atomic Layer ◽  
Multiple Cracks ◽  
Transmission Electron ◽  
Phosphorous Content

ABSTRACTThe defect structure of GaAsP layer grown by Atomic Layer Molecular Beam Epitaxy on (001) GaAs substrate has been studied by Transmission Electron Microscopy. The phosphorous content and the epilayer thickness have been changed below 25% and 1μm respectively. Three kinds of defect structure have been found: a) α-δ fringes at the interface for coherent epilayer, b) Misfit dislocation for thin epilayers and c) Multiple cracks normal to the interface and parallel to one <110> direction for thick epilayers.

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