Stoichiometric Disturbance in InP Measured During Ion Implantation Process

1983 ◽  
Vol 27 ◽  
Author(s):  
D. Haberland ◽  
P. Harde ◽  
H. Nelkowski ◽  
W. Schlaak
Keyword(s):  
Quantitative Analysis ◽  
Ion Implantation ◽  
Target Chamber ◽  
Depth Profiles ◽  
Preferential Sputtering ◽  
Implantation Process ◽  
Sputtering Yield ◽  
Set Up

ABSTRACTTo measure the sputtered ions during implantation a specially designed UHV-target chamber with a SIMS apparatus was set up. Quantitative analysis are possible with an Auger spectrometer. Disturbances in the stoichiometry in InP are measured during implantation of Sn. The enrichment of the doped surface of InP with the lighter component phoshorus will be discussed in consideration of preferential sputtering and recoil effects during implantation. Measured depth profiles of Sn in InP will be compared with calculated distributions on condition that sputtering takes place. The sputtering yield of InP bombarded by 120 keV Sn+ is 17±5.

scholarly journals Changes of tribological properties of Inconel 600 after ion implantation process

2014 ◽  
Vol 62 (4) ◽  
pp. 827-833 ◽  
Author(s):  
M. Barlak ◽  
M. Chmielewski ◽  
Z. Werner ◽  
K. Pietrzak
Keyword(s):  
Ion Implantation ◽  
Chromium Alloy ◽  
Surface Wear ◽  
Inconel 600 ◽  
Depth Profiles ◽  
Foil Bearings ◽  
Nickel Chromium ◽  
Implantation Process ◽  
Resistance Improvement ◽  
Good Agreement

Abstract Commercial Inconel 600 nickel-chromium alloy was implanted with nitrogen, titanium, chromium, copper with tin (as bronze components) and yttrium ions to doses ranging from 1.6e17 to 3.5e17 cm−2. The aim of this research was to investigate the properties of the modified alloy in the context of its application in foil bearings. The virgin and the treated samples were tribologically tested and examined by Scanning Electron Microscopy, Glow Discharge Mass Spectrometry and Energy Dispersive Spectroscopy. The technological studies were preceded by modelling of concentration values of the introduced elements. The results obtained with the use of ion implantation are discussed. There are two advantages which should be highlighted: good agreement in modelling and experimental results of depth profiles of implanted ions, wear resistance improvement of Inconel 600 surface by implantation of copper and tin ions. The tribological tests indicate that abrasion and corrosion are the predominant mechanisms of surface wear.

Synthesis of Iron Oxynitride by Nitrogen Ion Implantation of Iron Oxide

1988 ◽  
Vol 100 ◽  
Author(s):  
S. B. Ogale ◽  
Seema Teli ◽  
Sunita Chopda ◽  
D. M. Phase ◽  
S. M. Kanetkar
Keyword(s):  
Iron Oxide ◽  
Ion Implantation ◽  
Conversion Electron ◽  
Mossbauer Spectroscopy ◽  
Nitrogen Implantation ◽  
Nitrogen Ion Implantation ◽  
Conversion Electron Mössbauer Spectroscopy ◽  
Conversion Electron Mossbauer Spectroscopy ◽  
Implantation Process ◽  
Nitrogen Ion

ABSTRACTThe effect of N2+ ion implantation in ∝-Fe2O3 has been investigated by means of Conversion Electron Mossbauer Spectroscopy (CEMS). It Is shown that at a dose value of 1×1017 ions/cm2 and 3×1017 Ions/cm2 the samples exhibit new Interesting hyperfine features which can not be ascribed to known oxide or nitride phases. It Is thus concluded that Iron Oxynitrlde Is formed by the nitrogen Implantation process.

Characterization of Ion Implantation Damage in Capless Annealed GaAs

1983 ◽  
Vol 27 ◽  
Author(s):  
H. Kanber ◽  
M. Feng ◽  
J. M. Whelan
Keyword(s):  
Ion Implantation ◽  
Annealing Temperature ◽  
Rutherford Backscattering ◽  
Buffer Layers ◽  
Electrical Activation ◽  
Controlled Atmosphere ◽  
Damage Characteristics ◽  
Implantation Damage ◽  
Implantation Process

ABSTRACTArsenic and argon implantation damage is characterized by Rutherford backscattering in GaAs undoped VPE buffer layers grown on Cr-O doped semi-insulating substrates and capless annealed in a H2 −As4 atmosphere provided by AsH3. The damage detected in the RBS channeled spectra varies as a function of the ion mass, the implant depth and the annealing temperature of the stress-free controlled atmosphere technique. This damage is discussed in terms of the stoichiometric disturbances introduced by the implantation process. The as-implanted and annealed damage characteristics of the Ar and As implants are correlated to the electrical activation characteristics of Si and Se implants in GaAs, respectively.

Formation of Conducting and Insulating Layered Structures in Si by Ion Implantation: Process Control Using FTIR Spectroscopy

2001 ◽  
Vol 148 (12) ◽  
pp. G704 ◽  
Author(s):  
C. C. Katsidis ◽  
D. I. Siapkas ◽  
A. K. Robinson ◽  
P. L. F. Hemment
Keyword(s):  
Process Control ◽  
Ion Implantation ◽  
Ftir Spectroscopy ◽  
Layered Structures ◽  
Implantation Process

Plasma ion implantation of nitrogen into silicon: Characterization of the depth profiles of implanted ions

1994 ◽  
Vol 76 (10) ◽  
pp. 5666-5675 ◽  
Author(s):  
John J. Vajo ◽  
John D. Williams ◽  
Ronghua Wei ◽  
Robert G. Wilson ◽  
Jesse N. Matossian
Keyword(s):  
Ion Implantation ◽  
Depth Profiles

Fabrication of 1.2 kV Ni/4H-SiC Junction Barrier-Controlled Schottky Diodes with a Single P+ Ion-Implantation Process

2009 ◽  
Vol 54 (5(1)) ◽  
pp. 1802-1806 ◽  
Author(s):  
Sung-Jae Joo ◽  
In-Ho Kang ◽  
Wook Bahng ◽  
Sang Cheol Kim ◽  
Nam-Kyun Kim
Keyword(s):  
Ion Implantation ◽  
Schottky Diodes ◽  
Implantation Process

Demonstration of 1200 V/1.4 mΩ cm2 vertical GaN planar MOSFET fabricated by an all ion implantation process

2020 ◽  
Vol 59 (SG) ◽  
pp. SGGD02 ◽  
Author(s):  
Ryo Tanaka ◽  
Shinya Takashima ◽  
Katsunori Ueno ◽  
Hideaki Matsuyama ◽  
Masaharu Edo
Keyword(s):  
Ion Implantation ◽  
Implantation Process
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