Aluminum Ion Implantation in Silicon Carbide at High Temperature of Target

1992 ◽  
Vol 279 ◽  
Author(s):  
Alexander V. Suvorov ◽  
D. A. Plotkin ◽  
V. N. Makarov ◽  
V. N. Svetlov
Keyword(s):  
Silicon Carbide ◽  
High Temperature ◽  
Single Crystals ◽  
Electron Spectroscopy ◽  
Auger Electron ◽  
Epitaxial Films ◽  
High Dose ◽  
Layer Surface ◽  
Considerable Part ◽  
Before And After

ABSTRACTSingle crystals and epitaxial films of SiC - 4H and 6H were implanted at an energy of 40 and 90 KeV by ions of Al at various temperatures and high dose.The implanted layers were studied before and after annealing by Raman scattering, Auger electron spectroscopy and SIMS. Results of this investigation show intensive graphitization of the implanted layer surface, the formation of great associations of defects in the implanted layer and shallow defects. It was found that recrystallization of the implanted layer pushes out a considerable part of aluminum atoms. The nature of the processes in silicon carbide during implantation and annealing is discussed.

A New Hafnium-Beryllium System Prioduced by Ion Implantation and Annealing Techniques

1983 ◽  
Vol 27 ◽  
Author(s):  
J.C. Soares ◽  
A.A. Melo ◽  
M.F. DA Silva ◽  
E.J. Alves ◽  
K. Freitag ◽  
...  
Keyword(s):  
Ion Implantation ◽  
Single Crystals ◽  
Room Temperature ◽  
Low Dose ◽  
Correlation Method ◽  
High Dose ◽  
Tetrahedral Sites ◽  
Time Differential ◽  
Before And After ◽  
Beryllium Foil

ABSTRACTLow and high dose hafnium imolanted beryllium samoles have been prepared at room temperature by ion implantation of beryllium commercial foils and single crystals. These samples have been studied before and after annealing with the time differential perturbed angular correlation method (TDPAC) and with Rutherford backscattering and channeling techniques. A new metastable system has been discovered in TDPAC-measurements in a low dose hafnium implanted beryllium foil annealed at 500°C. Channeling measurements show that the hafnium atoms after annealing, are in the regular tetrahedral sites but dislocated from the previous position occupied after implantation. The formation of this system is connected with the redistribution of oxygen in a thin layer under the surface. This effect does not take place precisely at the same temperature in foils and in single crystals.

Auger electron spectroscopy study of reactive ion etched silicon carbide

2006 ◽  
Vol 83 (1) ◽  
pp. 12-16 ◽  
Author(s):  
J.H. Xia ◽  
Rusli ◽  
S.F. Choy ◽  
R. Gopalakrishan ◽  
C.C. Tin ◽  
...  
Keyword(s):  
Silicon Carbide ◽  
Auger Electron Spectroscopy ◽  
Electron Spectroscopy ◽  
Auger Electron ◽  
Spectroscopy Study ◽  
Etched Silicon

Search for Ion Induced Mixing in Ceramic-Ceramic Systems

1995 ◽  
Vol 396 ◽  
Author(s):  
K.R. Padmanabhan
Keyword(s):  
Auger Electron Spectroscopy ◽  
Electron Spectroscopy ◽  
Auger Electron ◽  
Ion Beam ◽  
Epitaxial Films ◽  
Ion Beam Mixing ◽  
Ceramic Substrates ◽  
Ion Channeling ◽  
Ceramic Films ◽  
Dose Dependent

AbstractThin sputtered ceramic films deposited on ceramic substrates were subjected to either Kr+ or Xe+ ion bombardment for ion beam mixing studies in ceramic-ceramic systems. The amount of mixing if any was evaluated from Rutherford backscattering and Auger electron spectroscopy. In some instances ceramic films were deposited on epitaxial films or single crystal substrates for ion channeling analysis. No significant mixing was observed in any of the systems with ZrC. However, analysis of the interface in Si3N4/ SiC system indicates appreciable mixing and ion beam induced damage to the substrate. The mixing appears to be dose dependent for heavier ions.

High Sensitivity Auger Spectroscopy

1986 ◽  
Vol 69 ◽  
Author(s):  
L. A. Larson
Keyword(s):  
Electron Beam ◽  
Background Subtraction ◽  
Electron Spectroscopy ◽  
Auger Electron ◽  
Secondary Electron ◽  
High Sensitivity ◽  
Auger Spectroscopy ◽  
High Dose ◽  
Auger Peak ◽  
Contamination Levels

AbstractThe technique of Auger Electron Spectroscopy has been investigated for the purposes of detecting contamination levels in high dose ion implants. Historically, Auger sensitivities have been considered to be on the order of 1%. This is due to the rather large secondary electron background and the various combinations of electron beam and detector noise that may occur. In this study, it is shown that the use of background subtraction and integration of the resulting EN(E) Auger peak will result in considerably better sensitivities for the case of ion implants in silicon.

NH3-Plasma Treatment of Gaas Surface at High Temperature in Remote Plasma and Direct Plasma Reactor

1993 ◽  
Vol 318 ◽  
Author(s):  
Kyoung Wan Park ◽  
Seong Jae Lee ◽  
Mincheol Shin ◽  
El-Hang Lee
Keyword(s):  
High Temperature ◽  
Plasma Treatment ◽  
Electron Spectroscopy ◽  
Auger Electron ◽  
Plasma Reactor ◽  
Gaas Surface ◽  
Ex Situ ◽  
Native Oxide ◽  
Long Term Stability

ABSTRACTNH3-plasma treatment has been used for passivation of native-oxide-contaminated GaAs surface. Ex situ band-gap photoluminescence(PL) measurement shows enhanced intensity for the treated surfaces in direct plasma. Auger electron spectroscopy(AES) shows that the treated surface contains nitrogen atoms but no arsenic atoms, which leads us to speculate that the graded GaN thin layer was formed on the surface. Long-term stability of the enhanced PL intensity is attributed to the formation of GaN on the surface.

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