Neutral Beam Source Design and Beam Kinetic Energy Activated SiO2 Etching
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ABSTRACTAn unique method is used to produce a low energy nonthermalized fast neutral radical beam wliich can activate the SiO2 surface for chemical reaction at the desired incident energy. The fast neutral beam energy is continuously adjustable (2eV<Ek<200eV) and the beam flux is typically 5×1015cm−2 sec−1(∼4L). An uniform large diameter plasma is also made for the production of neutral beam covering 5”wafer and larger. Large diameter neutral beam single wafer reactor is feasible with off-the-shelf pumping technology.
2018 ◽
Vol 376
(2116)
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pp. 20170266
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1980 ◽
Vol 51
(9)
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pp. 1163-1167
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1999 ◽
Vol 157
(1-4)
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pp. 138-143
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