Large Area Electron Beam Enhanced Reactive Etching of SiO2

1987 ◽  
Vol 98 ◽  
Author(s):  
P. Kirk Boyer ◽  
Tim Verhey ◽  
Jorge J. Rocca

ABSTRACTA large area (2.8 cm2) electron beam source has been developed, characterized, and applied to anisotropic etching of SiO2 masked with photoresist. This beam operates at high pressures (up to 100 mTorr), in reactive gases, and at more than 10 mA/cm2. Beam current can be controlled in several ways independently from beam energy. The 100 – 900 eV low energy beam propagates with collimation through several cm of reactive gas, and is believed to minimize space charge defocusing by collisionally ionizing the working gas.

Electronics ◽  
2021 ◽  
Vol 10 (6) ◽  
pp. 648
Author(s):  
Chenhui Deng ◽  
Li Han ◽  
Yan Wang

Charge accumulation often occurs in electron optics equipment and interferes with their operation. The trouble can be handled by using the electron flood gun. However, there are still some scenarios where neutralization is not as desired. To achieve a better charge neutralization effect and to facilitate work in confined spaces, a small size, low-energy electron flood gun providing a large area and uniform electron beam has been required. This article employs Munro’s Electron Beam Software (MEBS) to simulate the effect of the structure parameters on the performance of the beam. Based on the simulation results, the electron flood gun is processed and assembled. To verify the performance of the electron flood gun, this paper proposes a new “pinhole scanning method”. By using the method, we have achieved in-situ measurements of beam current and beam spot. The experimental results generally match the simulation results, which demonstrates that the electron flood gun has good performance and is likely to have many applications.


2012 ◽  
Vol 724 ◽  
pp. 439-442
Author(s):  
Seong Joon Ahn ◽  
Tae Sik Oh ◽  
Dae Wook Kim ◽  
Ho Seob Kim ◽  
Seung Joon Ahn

Although the electron-beam (e-beam) inspection can find the non-visual defects in the semiconductor devices under the fabrication procedure, it has a problem of low inspection speed. To resolve this problem, in this work, we have demonstrate the low-energy e-beam inspection using a tiny microcolumn as the e-beam source. The experimental result indicates that the non-visual defects in the wafer can be easily identified by measuring the e-beam current at the backside of the wafer. Since it is not difficult to make the multiple e-beam sources by packing many microcolumns, we can enhance the inspection many times by using the microcolumn e-beam sources.


2021 ◽  
Vol 16 (09) ◽  
pp. T09002
Author(s):  
S. Shrotriya ◽  
S. Mukherjee ◽  
S.S. Jena ◽  
A. Shiju ◽  
N. Patel ◽  
...  

2008 ◽  
Vol 79 (2) ◽  
pp. 02B318
Author(s):  
E. N. Beebe ◽  
J. G. Alessi ◽  
A. Kponou ◽  
C. Meitzler ◽  
A. Pikin ◽  
...  

Author(s):  
М.С. Воробьёв ◽  
П.В. Москвин ◽  
В.И. Шин ◽  
Н.Н. Коваль ◽  
К.Т. Ашурова ◽  
...  

The paper describes a method for a controlled change in the power of an electron beam during a pulse of submillisecond duration, using a source "SOLO" with a plasma cathode. The beam power is controlled by changing the amplitude of the beam current with a corresponding change in the concentration of the emission plasma. This control method allows generating submillisecond beams of variable power (up to 10 MW at a maximum rate of change of no more than 0.5 MW/µs), which can be used for processing various metallic materials in order to change the functional properties of their surface with the ability to control the rate of input of beam energy into the surface of these materials.


Vacuum ◽  
1990 ◽  
Vol 41 (4-6) ◽  
pp. 796-799 ◽  
Author(s):  
Y.C Du ◽  
H Wang ◽  
B.Z Li ◽  
D.C Sun ◽  
Z.Q Yu ◽  
...  

2014 ◽  
Vol 71 (5) ◽  
Author(s):  
Someraa Saleh Shakonah ◽  
Jalil Ali ◽  
Natashah Abd. Rashid ◽  
Kashif Chaudhary

Some of ion beam properties have been investigated by using Lee model code on plasma focus devices which is operated with nitrogen and helium gases. The operation of plasma focus in different pressure regime gives a consistent ion beam properties which can make the plasma focus a reliable ion beam source .These ion beam properties such as ion beam flux, ion beam fluence, ion beam energy, ion beam current, and beam ion number corresponding to gas pressure have been studied for Mather type plasma focus device. The result shows the differences between helium as lighter gas and nitrogen as heavier gas in term of ion beam properties. The fluence and flux are decrease for nitrogen while increase for helium. 


1992 ◽  
Vol 279 ◽  
Author(s):  
Lee Chen ◽  
Akihisa Sekiguchi ◽  
Dragan Podlesnik

ABSTRACTAn unique method is used to produce a low energy nonthermalized fast neutral radical beam wliich can activate the SiO2 surface for chemical reaction at the desired incident energy. The fast neutral beam energy is continuously adjustable (2eV<Ek<200eV) and the beam flux is typically 5×1015cm−2 sec−1(∼4L). An uniform large diameter plasma is also made for the production of neutral beam covering 5”wafer and larger. Large diameter neutral beam single wafer reactor is feasible with off-the-shelf pumping technology.


1975 ◽  
Vol 22 (4) ◽  
pp. 201-202 ◽  
Author(s):  
W.L. Chadsey ◽  
K.F. Galloway ◽  
R.L. Pease

2021 ◽  
Vol 23 (2) ◽  
pp. 77
Author(s):  
Tongfei Cheng ◽  
Jinxing Cao ◽  
Xiaohong Jiang ◽  
M.A. Yarmolenko ◽  
A.A. Rogachev ◽  
...  

In this paper, icaritin film was prepared by low-energy beam electron beam deposition (EBD). The material test showed that the structure and composition of icaritin were not changed after electron beam deposition. Then, the film was sliced and immersed in simulated body fluids, it can be seen that the film was released quickly in the first 7 days. With the extension of soaking time, the release rate gradually slowed down, and the release amount exceeded 90% in about 20 days. In vitro cytotoxicity test showed that the relative cell viability rate of the film was still 92.32±1.30% (p<0.05), indicating that the film possessed excellent cytocompatibility.


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