Deposition and Characterization of MgO Thin Films on SrTiO3 and LaAlO3 Substrates

1992 ◽  
Vol 280 ◽  
Author(s):  
Bertha P. Chang ◽  
Neville Sonnenberg ◽  
Michael J. Cima
Keyword(s):  
Thin Films ◽  
Film Thickness ◽  
Grazing Incidence ◽  
Rf Magnetron Sputtering ◽  
Electron Beam Evaporation ◽  
Substrate Material ◽  
X Ray ◽  
Force Microscopy ◽  
Atomic Force ◽  
Surface Morphologies

ABSTRACTMgO thin films have been deposited on SrTiO3 and LaA1O3 substrates using both off-axis rf magnetron sputtering and electron beam evaporation techniques. The effects of substrate material, temperature, film thickness, deposition rate, sputtering gas, and pressure on the quality of the MgO films produced have been studied. Films deposited on (100) SrTiO3 at temperatures > 300°C display only the (h00) reflections in their X-ray diffraction traces, with narrow X-ray rocking curve measurements indicating that these films are epitaxial. Epitaxy has been confirmed with grazing incidence diffraction. MgO films deposited on (100) LaAlO3 are crystalline, but have varying orientations depending on the film thickness. From scanning electron microscopy, MgO films on SrTiO3 substrates appear smooth and dense while those deposited on LaAlO3 substrates possess rougher surfaces. Surface morphologies have been analyzed using atomic force microscopy.

Dielectric Properties of Sol-Gel Derived MgAl2O4 Thin Films

2012 ◽  
Vol 151 ◽  
pp. 314-318
Author(s):  
Ching Fang Tseng ◽  
Cheng Hsing Hsu ◽  
Chun Hung Lai
Keyword(s):  
Thin Films ◽  
Annealing Temperature ◽  
Sol Gel ◽  
Dissipation Factor ◽  
X Ray Diffraction ◽  
X Ray ◽  
Force Microscopy ◽  
Atomic Force ◽  
Preheating Temperature ◽  
Surface Morphologies

This paper describes microstructure characteristics of MgAl2O4 thin films were deposited by sol-gel method with various preheating temperatures and annealing temperatures. Particular attention will be paid to the effects of a thermal treatment in air ambient on the physical properties. The annealed films were characterized using X-ray diffraction. The surface morphologies of treatment film were examined by scanning electron microscopy and atomic force microscopy. At a preheating temperature of 300oC and an annealing temperature of 700oC, the MgAl2O4 films with 9 μm thickness possess a dielectric constant of 9 at 1 kHz and a dissipation factor of 0.18 at 1 kHz.

Synthesis and Characterization of Nb-Doped TiO2 Thin Films Prepared by RF Magnetron Sputtering

2015 ◽  
Vol 1117 ◽  
pp. 139-142 ◽  
Author(s):  
Marius Dobromir ◽  
Radu Paul Apetrei ◽  
A.V. Rogachev ◽  
Dmitry L. Kovalenko ◽  
Dumitru Luca
Keyword(s):  
Thin Films ◽  
Magnetron Sputtering ◽  
Photoelectron Spectroscopy ◽  
Rf Magnetron Sputtering ◽  
X Ray ◽  
Force Microscopy ◽  
Glass Substrates ◽  
Atomic Force ◽  
Vis Spectroscopy ◽  
Diffraction Patterns

Amorphous Nb-doped TiO2 thin films were deposited on (100) Si and glass substrates at room temperature by RF magnetron sputtering and a mosaic-type Nb2O5-TiO2 sputtering target. To adjust the amount of the niobium dopant in the film samples, appropriate numbers of Nb2O5 pellets were placed on the circular area of the magnetron target with intensive sputtering. By adjusting the discharge conditions and the number of niobium oxide pellets, films with dopant content varying between 0 and 16.2 at.% were prepared, as demonstrated by X-ray photoelectron spectroscopy data. The X-ray diffraction patterns of the as-deposited samples showed the lack of crystalline ordering in the samples. Surfaces roughness and energy band gap values increase with dopant concentration, as showed by atomic force microscopy and UV-Vis spectroscopy measurements.

Reactive Sputtering Growth and Characterizations of InN Thin Films on Si Substrates

2012 ◽  
Vol 545 ◽  
pp. 290-293
Author(s):  
Maryam Amirhoseiny ◽  
Hassan Zainuriah ◽  
Ng Shashiong ◽  
Mohd Anas Ahmad
Keyword(s):  
Thin Films ◽  
Room Temperature ◽  
Rf Magnetron Sputtering ◽  
Rf Power ◽  
X Ray Diffraction ◽  
Nitrogen Gas ◽  
X Ray ◽  
Force Microscopy ◽  
Si Substrates ◽  
Atomic Force

We have studied the effects of deposition conditions on the crystal structure of InN films deposited on Si substrate. InN thin films have been deposited on Si(100) substrates by reactive radio frequency (RF) magnetron sputtering method with pure In target at room temperature. The nitrogen gas pressure, applied RF power and the distance between target and substrate were 2×10-2 Torr, 60 W and 8 cm, respectively. The effects of the Ar–N2 sputtering gas mixture on the structural properties of the films were investigated by using scanning electron microscope, energy-dispersive X-ray spectroscopy, atomic force microscopy and X-ray diffraction techniques.

X-ray photoelectron spectroscopy characterization and morphology of MgO thin films grown on single-crystalline diamond (100)

2002 ◽  
Vol 17 (8) ◽  
pp. 1914-1922 ◽  
Author(s):  
S. M. Lee ◽  
T. Ito ◽  
H. Murakami
Keyword(s):  
Thin Films ◽  
Photoelectron Spectroscopy ◽  
Film Surface ◽  
Growth Front ◽  
Electron Beam Evaporation ◽  
Single Crystalline ◽  
X Ray ◽  
Force Microscopy ◽  
Magnesium Peroxide ◽  
Surface Morphologies

The morphology and composition of MgO films grown on single-crystalline diamond (100) have been studied. MgO thin films were deposited in the substrate temperature range from room temperature (RT) to 723 K by means of electron beam evaporation using a MgO powder source. Atomic force microscopy images indicated that the film grown at RT without O2 supply was relatively uniform and flat whereas that deposited in oxygen ambient yielded higher growth rates and rough surface morphologies. X-ray photoelectron spectroscopy analyses demonstrate that the MgO film deposited at RT without O2 has the composition closest to that of the stoichiometric MgO and that a thin contaminant layer composed mainly of magnesium peroxide (before etching) or hydroxide (after etching) was unintentionally formed on the film surface, respectively.These results will be discussed in relation to the interaction among the evaporated species and intentionally supplied oxygen molecules at the growth front as well as the interfacial energy between diamond and MgO.

Heteroepitaxial Growth of Epitaxial C60-Thin Films on Mica(001)

1994 ◽  
Vol 359 ◽  
Author(s):  
S. Henke ◽  
K.H. Thürer ◽  
S. Geier ◽  
B. Rauschenbach ◽  
B. Stritzker
Keyword(s):  
Thin Films ◽  
Film Thickness ◽  
Substrate Temperature ◽  
Room Temperature ◽  
Heteroepitaxial Growth ◽  
X Ray Diffraction ◽  
X Ray ◽  
Force Microscopy ◽  
Atomic Force ◽  
Substrate Temperatures

ABSTRACTOn mica(001) thin C60-films are deposited by thermal evaporation at substrate temperatures from room temperature up to 225°C. The dependence of the structure and the epitaxial alignment of the thin C60-films on mica(001) on the substrate temperature and the film thickness up to 1.3 μm at a well-defined deposition rate (0.008 nm/s) is investigated by atomic force microscopy and X-ray diffraction. The shape and the size of the C60-islands, which have an influence on the film quality at larger film thicknesses, are sensitively dependent on the substrate temperature. At a film thickness of 200 nm the increase of the substrate temperature up to 225°C leads to smooth, completely coalesced epitaxial C60-thin films characterized by a roughness smaller than 1.5 nm, a mosaic spread Δω of 0.1° and an azimuthal alignment ΔΦ of 0.45°.

C− Outgrowths in C+ Thin Films of LiNbO3 on Al2O3-c

1994 ◽  
Vol 341 ◽  
Author(s):  
J. J. Kingston ◽  
D. K. Fork ◽  
F. Leplingard ◽  
F. A. Ponce
Keyword(s):  
Thin Film ◽  
Thin Films ◽  
Rf Magnetron Sputtering ◽  
X Ray Diffraction ◽  
Optical Losses ◽  
X Ray ◽  
Force Microscopy ◽  
Atomic Force ◽  
Preferential Nucleation ◽  
Thin Film Waveguides

AbstractThin-film waveguides of LiNbO3 have been grown on Al2O3-c by off-axis rf magnetron sputtering. The films have been characterized optically by prism coupling measurements, crystallographically by x-ray diffraction, and morphologically by atomic force microscopy. We find that optical losses can be dominated by scattering from large outgrowths that litter the surface of the film. These outgrowths are c− grains imbedded in a c+ matrix. Although some grains nucleate c−, others have their polarity reversed from c+ to c− after nucleation. A model will be presented to explain the preferential nucleation of c+ grains on Al2O3-c. The c− grains grow much faster than the c+ ones because of attractive coulombic forces between the c− grains and the ionized Li and Nb species in the sputter plume.

Microstructure and Optical Properties of (Zr0.8, Sn0.2)TiO4 Thin Films Grown on Si(100) Substrates by a Sol-Gel Process

2005 ◽  
Vol 475-479 ◽  
pp. 3693-3696
Author(s):  
Wen Xiu Cheng ◽  
Ai Li Ding ◽  
Ping Sun Qiu
Keyword(s):  
Thin Films ◽  
Sol Gel ◽  
X Ray Diffraction ◽  
Indirect Transition ◽  
X Ray ◽  
Force Microscopy ◽  
Atomic Force ◽  
Sol Gel Process ◽  
Surface Morphologies ◽  
Transition Type

Amorphous and crystalline (Zr0.8,Sn0.2)TiO4 （ZST） thin films deposited on Si(100) substrates have been prepared by a sol-gel process. The crystal structure and surface morphologies of the thin films have been studied by X-ray diffraction and atomic force microscopy. The crystalline ZST films on Si(100) substrata with a (111) orientation The refractive index n and extinction coefficient k of the amorphous and crystalline thin films were obtained by spectroscopy ellipsometry as a function of phone energy in the range from 0.7 to 5.4 eV. The absorption edges for amorphous and crystalline ZST are 3.83 and 3.51eV of indirect–transition type respectively.

Iron substituted SrRuO3 thin films

2006 ◽  
Vol 962 ◽  
Author(s):  
Aman Ullah ◽  
Young Zo Yoo ◽  
Omar Chmaissem ◽  
Stanislaw Kolesnik ◽  
Bogdan Dabrowski ◽  
...  
Keyword(s):  
Thin Films ◽  
Structural Disorder ◽  
Precise Determination ◽  
Fe Doping ◽  
X Ray ◽  
Force Microscopy ◽  
Lattice Constants ◽  
Atomic Force ◽  
Surface Morphologies

ABSTRACTFe-doped SrRuO3 thin films were grown on SrTiO3 (STO) substrates by using the Pulse Laser Deposition (PLD) method. Fe concentrations in the SrRuO3 thin films ranged from 0 % to 11 % to manifest the effect of Fe doping on their microstructure. Lattice constants of the films did not show obvious changes with the Fe doping whereas surface morphologies drastically changed from stepped to island structure with increasing Fe. X-ray reflectivity revealed that the surface and interfacial roughness decreased with increasing concentration of Fe. Surface roughness of the films was confirmed by atomic force microscopy. Therefore, a precise determination of film roughness as well as its growth mechanism using X-ray and AFM is exploited to correlate the Fe doping with structural disorder.

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