Effect of AlN Buffer Layer on AlGaN/α-Al2O3Heteroepitaxial Growth by Metalorganic Vapor Phase Epitaxy

1988 ◽  
Vol 27 (Part 1, No. 7) ◽  
pp. 1156-1161 ◽  
Author(s):  
Yasuo Koide ◽  
Nobuo Itoh ◽  
Kenji Itoh ◽  
Nobuhiko Sawaki ◽  
Isamu Akasaki
Keyword(s):  
Buffer Layer ◽  
Vapor Phase ◽  
Metalorganic Vapor Phase Epitaxy ◽  
Vapor Phase Epitaxy ◽  
Aln Buffer

Impact of H2-preannealing of the Sapphire Substrate on the Crystallization of Low-Temperature-Deposited AlN Buffer Layer

2004 ◽  
Vol 831 ◽  
Author(s):  
Michinobu Tsuda ◽  
Krishnan Balakrishnan ◽  
Motoaki Iwaya ◽  
Satoshi Kamiyama ◽  
Hiroshi Amano ◽  
...  
Keyword(s):  
Low Temperature ◽  
Temperature Variation ◽  
Buffer Layer ◽  
Vapor Phase ◽  
Sapphire Substrate ◽  
Metalorganic Vapor Phase Epitaxy ◽  
Vapor Phase Epitaxy ◽  
Aln Buffer

ABSTRACTThe effect of H2-preannealing of sapphire substrate on low-temperature (LT- ) AlN buffer layer deposited by metalorganic vapor phase epitaxy is investigated. Crystallinity of LT-AlN drastically changes with preannealing temperature variation. It is found that H2-preannealing of sapphire substrate is a requisite to get a better quality LT-AlN and as a consequence it leads to growth of better quality GaN epi-layer on it.

A new buffer layer for high quality GaN growth by metalorganic vapor phase epitaxy

1998 ◽  
Vol 72 (6) ◽  
pp. 704-706 ◽  
Author(s):  
Tetsu Kachi ◽  
Kazuyoshi Tomita ◽  
Kenji Itoh ◽  
Hiroshi Tadano
Keyword(s):  
Buffer Layer ◽  
Vapor Phase ◽  
Metalorganic Vapor Phase Epitaxy ◽  
Vapor Phase Epitaxy ◽  
High Quality

The dependence of growth rate of GaN buffer layer on growth parameters by metalorganic vapor-phase epitaxy

1998 ◽  
Vol 193 (1-2) ◽  
pp. 23-27 ◽  
Author(s):  
Xianglin Liu ◽  
Da-Cheng Lu ◽  
Lianshan Wang ◽  
Xiaohui Wang ◽  
Du Wang ◽  
...  
Keyword(s):  
Growth Rate ◽  
Buffer Layer ◽  
Vapor Phase ◽  
Growth Parameters ◽  
Metalorganic Vapor Phase Epitaxy ◽  
Vapor Phase Epitaxy ◽  
Gan Buffer Layer

The influence of thickness on properties of GaN buffer layer and heavily Si-doped GaN grown by metalorganic vapor-phase epitaxy

1998 ◽  
Vol 189-190 ◽  
pp. 287-290 ◽  
Author(s):  
Xianglin Liu ◽  
Lianshan Wang ◽  
Da-Cheng Lu ◽  
Du Wang ◽  
Xiaohui Wang ◽  
...  
Keyword(s):  
Buffer Layer ◽  
Vapor Phase ◽  
Metalorganic Vapor Phase Epitaxy ◽  
Vapor Phase Epitaxy ◽  
Si Doped ◽  
Gan Buffer Layer

Crystal Quality and Surface Morphology Improvement of Movpe-Grown GaAs-on-Si Using Tertiarybutylarsine

1992 ◽  
Vol 281 ◽  
Author(s):  
S. MIYAGAKI ◽  
S. Ohkubo ◽  
K. Takai ◽  
N. Takagi ◽  
M. Kimura ◽  
...  
Keyword(s):  
Surface Morphology ◽  
Buffer Layer ◽  
Vapor Phase ◽  
Metalorganic Vapor Phase Epitaxy ◽  
Layer Growth ◽  
Vapor Phase Epitaxy ◽  
Crystal Quality ◽  
Si Substrate ◽  
Gaas Films

ABSTRACTWe developed GaAs heteroepitaxy on a Si substrate by metalorganic vapor phase epitaxy (MOVPE) using tertiarybutylarsine (TBAs). In buffer layer growth at 450°C, the surface morphology and crystal quality of TBAs-grown films were slightly inferior to those of AsH3-grown films. At buffer layer growth below 400°C, the quality of TBAs-grown films improved. The GaAs films we grew using TBAs had a better quality than those grown using AsH2.

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