Improvement in crystal quality of ZnO film on Si substrate by using a homo-buffer layer

2009 ◽  
Vol 12 (6) ◽  
pp. 233-237 ◽  
Author(s):  
Jie Zhao ◽  
Lizhong Hu
Keyword(s):  
Buffer Layer ◽  
Crystal Quality ◽  
Zno Film ◽  
Si Substrate

Crystal Quality and Surface Morphology Improvement of Movpe-Grown GaAs-on-Si Using Tertiarybutylarsine

1992 ◽  
Vol 281 ◽  
Author(s):  
S. MIYAGAKI ◽  
S. Ohkubo ◽  
K. Takai ◽  
N. Takagi ◽  
M. Kimura ◽  
...  
Keyword(s):  
Surface Morphology ◽  
Buffer Layer ◽  
Vapor Phase ◽  
Metalorganic Vapor Phase Epitaxy ◽  
Layer Growth ◽  
Vapor Phase Epitaxy ◽  
Crystal Quality ◽  
Si Substrate ◽  
Gaas Films

ABSTRACTWe developed GaAs heteroepitaxy on a Si substrate by metalorganic vapor phase epitaxy (MOVPE) using tertiarybutylarsine (TBAs). In buffer layer growth at 450°C, the surface morphology and crystal quality of TBAs-grown films were slightly inferior to those of AsH3-grown films. At buffer layer growth below 400°C, the quality of TBAs-grown films improved. The GaAs films we grew using TBAs had a better quality than those grown using AsH2.

Improvement in Surface Morphology and Crystal Epitaxial CaF2 on Si (100) Through two Mbe Growth Stages

1988 ◽  
Vol 116 ◽  
Author(s):  
Yoshihiro Morimoto ◽  
Shoichiro Matsumoto ◽  
Shoji Sudo ◽  
Kiyoshi Yoneda
Keyword(s):  
Surface Morphology ◽  
Smooth Surface ◽  
Growth Stage ◽  
Early Growth ◽  
Crystal Quality ◽  
Growth Stages ◽  
Optimum Conditions ◽  
Si Substrate ◽  
Mbe Growth

AbstractWe report the first study on improvement in surface morphology and crystal quality of as—grown epitaxial CaF2 film on a (100) Si substrate grown through two MBE growth stages without any post-growth treatment. The degree of improvement in surfacemorphology and crystal quality depends not only on the thickness of an initial thin CaF2 film grown at the early growth stage of 550ºC but also on both the subsrate temperature and thickness of a sequential grown CaF2 film used for thesecond growth stage. Under optimum conditions, the CaF2 films exhibited high quality with an RBS/channeling minimum yield of 4%, together with a very smooth surface morphology without any other nuclel or cracks.

Effect of LaNiO3 Buffer Layer on the Electrical and Optical Properties of Nonpolar ZnO Film Deposited on (100) Si Substrate

2019 ◽  
Vol 793 ◽  
pp. 29-34
Author(s):  
Quan Liang Zhao ◽  
Tian Yu Sheng ◽  
Lei Pang ◽  
Jie Jian Di ◽  
Guang Ping He ◽  
...  
Keyword(s):  
Buffer Layer ◽  
Buffer Layers ◽  
Zno Films ◽  
Band Edge Emission ◽  
X Ray Diffraction ◽  
Zno Film ◽  
Si Substrate ◽  
Radio Frequency Sputtering ◽  
Silicon Based ◽  
Current Behavior

Nonpolar ZnO films are deposited on (100) Si substrate using LaNiO3 conducting buffer layer by radio frequency sputtering. X-ray diffraction results show that ZnO films are (110) and (002) orientation with and without LaNiO3 buffer layer. The current behavior of ZnO/LaNiO3 heterojunction exhibits ohmic conduction which is different from the diode-like rectification current behavior of ZnO film using insulated buffer layers. The photoluminescence properties indicate that the (110)-oriented nonpolar ZnO film has better band-edge emission than that of (002)-oriented polar ZnO film. It is suggested that LaNiO3 buffer layer can be used to deposit silicon-based ZnO film with well ohmic contact electrode in optoelectronic devices.

Influence of Annealing on the 1.5 μm Light Emission of Er-doped ZnO Thin Films and its Crystal Quality

2005 ◽  
Vol 20 (9) ◽  
pp. 2578-2582 ◽  
Author(s):  
Yukari Ishikawa ◽  
Mitsuhiro Okamoto ◽  
Shigeru Tanaka ◽  
Dai Nezaki ◽  
N. Shibata
Keyword(s):  
Light Emission ◽  
Intensity Variation ◽  
Crystal Quality ◽  
Zno Films ◽  
Diffraction Measurement ◽  
Zno Film ◽  
Doped Zno ◽  
Pl Intensity ◽  
Er Doped

Intensity variation of 1.5 μm light emission at room temperature from Er-doped epitaxial and polycrystal ZnO films depending on annealing temperature (773–1373 K) was studied. As-grown Er-doped epitaxial ZnO film emitted 1.5 μm photoluminescence(PL) higher than as-grown Er-doped polycrystal ZnO. It was found that the annealing in air increases PL intensity and the maximum PL intensity was obtained by annealing at optimal temperature (1073 K). Spectrum shape and intensity of 1.5 μm PL of Er-doped epitaxial ZnO after annealing at 1073 K resembled those of Er-doped polycrystal ZnO after annealing at 1073 K. X-ray diffraction measurement demonstrated that annealing improves crystal quality of Er-doped ZnO film. We assumed that the process of 1.5 μm light emission is dependent on local area placement of Zn and O atoms around Er as well as crystal quality of ZnO.

The thermal treatment effects of CrN buffer layer on crystal quality of Zn-polar ZnO films

2011 ◽  
Vol 519 (10) ◽  
pp. 3417-3420 ◽  
Author(s):  
Jinsub Park ◽  
T. Minegishi ◽  
S.H. Park ◽  
S.K. Hong ◽  
J.H. Chang ◽  
...  
Keyword(s):  
Thermal Treatment ◽  
Buffer Layer ◽  
Treatment Effects ◽  
Crystal Quality ◽  
Zno Films

Influence of the Quality of AlN Buffer Layer on the Quality of GaN Epitaxial Layer on Silicon Substrate

2011 ◽  
Vol 306-307 ◽  
pp. 201-205
Author(s):  
Kang Zhang ◽  
Tai Ping Lu ◽  
Shu Ti Li
Keyword(s):  
Buffer Layer ◽  
Vapor Deposition ◽  
Metalorganic Chemical Vapor Deposition ◽  
Chemical Vapor ◽  
Threading Dislocation ◽  
Mean Square ◽  
Si Substrate ◽  
Aln Buffer ◽  
Metalorganic Chemical

The effect of AlN buffer layer on the quality of GaN epilayer grown on Si substrate by metalorganic chemical vapor deposition (MOCVD) has been investigated. It was found that the quality of GaN epilayer strongly related with the crystal quality of AlN buffer layer. As the full width at half maximum (FWHM) of AlN (0 0 2) plane increased from 1.23 degree to 3.41 degree, the FWHM of GaN (0 0 2) plane varied from 432 arcsec to 936 arcsec and the FWHM of GaN (1 0 2) plane varied from 677 arcsec to 1226 arcsec. Besides, more cracks formed and threading dislocation (TD) density increased. The deteriorated AlN buffer layer also led to a rougher morphology of the GaN layer, as can be seen from the root mean square (RMS) roughness of GaN layer which varied from 0.178 nm to 0.476 nm. And the morphology of AlN and the quality of GaN epilayer are not appear to be relevant due to the ruleless values of RMS roughness of AlN.

Impact of rough silicon buffer layer on electronic quality of GaAs grown on Si substrate

2012 ◽  
Vol 12 (5) ◽  
pp. 1256-1258 ◽  
Author(s):  
B. Azeza ◽  
M. Ezzedini ◽  
Z. Zaaboub ◽  
R. M’ghaieth ◽  
L. Sfaxi ◽  
...  
Keyword(s):  
Buffer Layer ◽  
Si Substrate

scholarly journals Analysis of GaN-based HEMTS with AlN buffer layers by using Raman spectroscopy

2021 ◽  
pp. 2141010
Author(s):  
Cheng Che Lee ◽  
Hsin Jung Lee ◽  
Hsin Che Lee ◽  
Wei Yu Lee ◽  
Wei Ching Chuang
Keyword(s):  
Raman Spectroscopy ◽  
Buffer Layer ◽  
Epitaxial Layer ◽  
Drain Current ◽  
Buffer Layers ◽  
Crystal Quality ◽  
Subthreshold Slope ◽  
Gan Hemts ◽  
Aln Buffer

In this paper, AlGaN/GaN HEMTs with an AlN buffer layer were fabricated. Analyses on the crystal quality of the GaN epitaxial layer by Raman spectroscopy have been purposed. By introducing an AlN layer on sapphire substrate, the maximum drain current of the HEMT increased from 481 mA/mm to 522 mA/mm at [Formula: see text] V. Subthreshold slope was reduced from 638.3 mV/decade to 240.9 mV/decade and the electron mobility increased from 1109 cm2 V[Formula: see text]s[Formula: see text] to 1781 cm2 V[Formula: see text]s[Formula: see text]. These results showed that using an AlN buffer layer can improve the crystal quality of the GaN epitaxial layer, thus optimize the device performances of the GaN-based HEMTs.

Sign in / Sign up

Export Citation Format

Share Document