Deposition, Annealing, and Characterization of Tantalum Pentoxide Films

1992 ◽  
Vol 282 ◽  
Author(s):  
H. Treichel ◽  
A. Mitwalsky ◽  
G. Tempel ◽  
G. Zorn ◽  
W. Kern ◽  
...  
Keyword(s):  
High Dielectric Constant ◽  
Optimal Combination ◽  
Tantalum Pentoxide ◽  
Fundamental Properties ◽  
Integrated Devices ◽  
Design And Manufacturing ◽  
Annealing Procedure ◽  
High Dielectric ◽  
Deposition Techniques

ABSTRACTFilms of tantalum pentoxide (Ta2O5) have been fabricated by use of different precursor materials, deposition techniques and annealing procedures. Several analytical methods were appliedto study the layers. Fundamental properties and new data are reportedand related to practical features that are of importance in device design and manufacturing of advanced, highly integrated devices. This overview may facilitate the choice of an optimal combination of precursor, deposition technique and corresponding annealing procedure for aspecific application of these films in microelectronics, since the electrical properties reveal the potential of Ta2O5 films for the use in 64Mbit and 256Mbit DRAM devices as high dielectric constant material.

Optical properties and band gap characterization of high dielectric constant oxides

2012 ◽  
Vol 520 (14) ◽  
pp. 4532-4535 ◽  
Author(s):  
O. Fursenko ◽  
J. Bauer ◽  
G. Lupina ◽  
P. Dudek ◽  
M. Lukosius ◽  
...  
Keyword(s):  
Dielectric Constant ◽  
Optical Properties ◽  
Band Gap ◽  
High Dielectric Constant ◽  
High Dielectric

Pulsed DC Magnetron Sputtered Rutile TiO2 films for next generation DRAM capacitors

2013 ◽  
Vol 1561 ◽  
Author(s):  
M.A Jithin ◽  
Lakshmi Ganapathi Kolla ◽  
Navakanta Bhat ◽  
S. Mohan ◽  
Yuichiro Morozumi ◽  
...  
Keyword(s):  
Dielectric Constant ◽  
High Dielectric Constant ◽  
Low Dielectric Constant ◽  
Si Substrate ◽  
Capacitance Density ◽  
Low Dielectric ◽  
Pulsed Dc ◽  
High Dielectric ◽  
Mim Capacitors

ABSTRACTIn this study, synthesis and characterization of rutile-Titanium dioxide (TiO2) thin films using pulsed DC Magnetron Sputtering at room temperature, along with the fabrication and characterization of MIM capacitors have been discussed. XPS and RBS data show that the films are stoichiometric and have compositional uniformity. The influence of electrode materials on electrical characteristics of the fabricated MIM capacitors has been studied. The Al/TiO2/Al based capacitors show low capacitance density (9 fF/μm2) with low dielectric constant (K=25) and high EOT (3.67 nm) due to low dielectric constant TiO2 phase formation on Al/Si substrate. On the other hand, Ru/TiO2/Ru based capacitors show high capacitance density (49 fF/μm2) with high dielectric constant (K=130) and low EOT (0.7nm) values at high frequency (100 KHz) due to high dielectric constant phase (rutile) formation of TiO2, on Ru/Si substrate. Raman spectra confirm that the films deposited on Ru/Si substrate show the rutile phase.

Fabrication and Characterization of Metal-Ferroelectric-Gan Structures

1999 ◽  
Vol 595 ◽  
Author(s):  
W.P. Li ◽  
R. Zhang ◽  
J. Yin ◽  
X.H. Liu ◽  
Y.G. Zhou ◽  
...  
Keyword(s):  
High Frequency ◽  
High Dielectric Constant ◽  
Oxide Thickness ◽  
X Ray Diffraction ◽  
X Ray ◽  
Active Layers ◽  
Pzt Films ◽  
High Dielectric ◽  
Mos Structures

AbstractGaN-based metal-ferroelectric-semiconductor (MFS) structure has been fabricated by using ferroelectric Pb(Zr0.53Ti0.47)O3 (PZT) instead of conventional oxides as gate insulators. The GaN and PZT films in the MFS structures have been characterized by various methods such as photoluminescence (PL), wide-angle X-ray diffraction (XRD) and high-resolution X-ray diffraction (HRXRD). The Electric properties of GaN MFS structure with different oxide thickness have been characterized by high-frequency C-V measurement. When the PZT films are as thick as 1 µm, the GaN active layers can approach inversion under the bias of 15V, which can not be observed in the traditional GaN MOS structures. When the PZT films are about 100 nm, the MFS structures can approach inversion just under 5V. All the marked improvements of C-V behaviors in GaN MFS structures are mainly attributed to the high dielectric constant and large polarization of the ferroelectric gate oxide.

scholarly journals Characterization of the BFO-BZN-based electroceramic composite for application as DRA

Cerâmica ◽  
2020 ◽  
Vol 66 (377) ◽  
pp. 1-6
Author(s):  
A. V. Duarte ◽  
E. C. L. da Silva ◽  
E. A. O. Melo ◽  
F. M. M. Pereira ◽  
A. S. B. Sombra
Keyword(s):  
Dielectric Resonator ◽  
High Dielectric Constant ◽  
Ceramic Composites ◽  
Microwave Range ◽  
Dielectric Resonator Antenna ◽  
New Materials ◽  
Telecommunication Sector ◽  
Low Dielectric ◽  
High Dielectric

Abstract The study and development of ceramic composites are important because of the properties that these materials can provide, such as high dielectric constant and low dielectric loss in the RF and microwave range. Such characteristics make this type of material appropriate to several segments, such as in the telecommunication sector, especially in dielectric resonator antenna (DRA). Ceramic composites provide new materials with a range of properties that can be controlled through the phases to meet the specifications of a given application. This study aimed to synthesize and characterize the composite based on hexaferrite (BFO) and ceramics based on bismuth (BZN), aiming application as DRA. The composites were characterized by FTIR, XRD, and SEM. The composites presented a compact and heterogeneous microstructure, indicating that the sintering at 1000 °C/150 min was adequate for obtaining the ceramic composites; besides, BFO-BZNβ composite was shown to be less porous than the composite BFO-BZNα.

Synthesis and electrochemical characterization of electroactive IoNanofluids with high dielectric constants from hydrated ferrous sulphate

2019 ◽  
Vol 55 (1) ◽  
pp. 83-86 ◽  
Author(s):  
Aswathy Joseph ◽  
Marylin Mary Xavier ◽  
Jacek Fal ◽  
Gaweł Żyła ◽  
Soorya Sasi ◽  
...  
Keyword(s):  
Dielectric Constant ◽  
High Stability ◽  
High Dielectric Constant ◽  
Ferrous Sulphate ◽  
Dielectric Constants ◽  
Microwave Assisted ◽  
Low Viscosity ◽  
One Step ◽  
High Dielectric

An iron oxide based-electroactive IoNanofluid with a high dielectric constant, high stability and low viscosity was synthesized from ferrous sulphate heptahydrate via a facile microwave assisted one-step route in 1-butyl-4-methylpyridinium chloride.

The Synthesis and Characterization of SrTiO3 Film Fabricated by Micro Arcoxidation

2011 ◽  
Vol 311-313 ◽  
pp. 1262-1266 ◽  
Author(s):  
Hui Yong Guo ◽  
Wen Bo Huang ◽  
Wen Fang Li ◽  
Guo Ge Zhang ◽  
En Fu Wang
Keyword(s):  
Surface Morphology ◽  
High Dielectric Constant ◽  
Electrolyte Concentration ◽  
Pure Titanium ◽  
Xrd Analysis ◽  
Synthesis And Characterization ◽  
X Ray Diffraction ◽  
X Ray ◽  
High Dielectric

Pure titanium plates as anode and mixture of solutions containing 0.2M Sr(OH)2and 0.2M NaOH as electrolyte, titanium plates were microarc-oxidated for 10 minutes. X-Ray Diffraction (XRD) analysis indicated that SrTiO3film was successfully deposited. The MAO film is composed mainly of tetragonal SrTiO3phases and found to possess high dielectric constant of 371.0 at the frequency of 1 kHz. Scanning Electron Microscopy (SEM) and portable roughness tester were used to characterize the surface morphology and roughness values(Ra), The influences of electrolyte concentration, current density and frequency on the surface morphology of SrTiO3film were investigated in detail . several rules were drawn from the results. A kinetics expression was established for the growth of film thickness and agreed well with the experimental results.

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