Microstuctural Evolution and Substrate Selectivity in Pecvd μc-Si

1992 ◽  
Vol 283 ◽  
Author(s):  
Gregory N. Parsons ◽  
John J. Boland ◽  
James C. Tsang
Keyword(s):  
Hydrogen Plasma ◽  
Chemical Vapor ◽  
Process Conditions ◽  
Microcrystalline Silicon ◽  
Selective Area ◽  
Initial Nucleation ◽  
Bond Strain ◽  
Manufacturing Applications ◽  
Kinetics Of ◽  
Area Deposition

ABSTRACTWe discuss a process for selective area deposition of microcrystalline silicon (μc-Si) using plasma enhanced chemical vapor deposition at low substrate temperature (<300°C) using time modulated silane flow in a hydrogen plasma. We discuss selectivity and deposition rate on a variety of substrates with process conditions important for manufacturing applications, and show a distinct microstructural evolution in the initial nucleation layers using Raman spectroscopy that correlates with the transition from selective to non-selective growth. Atomic hydrogen discriminates between different degrees of bond strain in the nucleii formed on different substrates, and can increase the crystallinity fraction in films deposited at low temperatures by modifying the kinetics of bulk-like bond formation.

Selective area deposition of diamond thin films on patterns of porous silicon by hot‐filament chemical vapor deposition

1995 ◽  
Vol 67 (24) ◽  
pp. 3557-3559 ◽  
Author(s):  
S. Mirzakuchaki ◽  
M. Hajsaid ◽  
H. Golestanian ◽  
R. Roychoudhury ◽  
E. J. Charlson ◽  
...  
Keyword(s):  
Thin Films ◽  
Chemical Vapor Deposition ◽  
Porous Silicon ◽  
Vapor Deposition ◽  
Chemical Vapor ◽  
Selective Area ◽  
Diamond Thin Films ◽  
Hot Filament ◽  
Area Deposition

Post-Deposition Annealing and Hydrogenation of Hot-Wire Amorphous and Microcrystalline Silicon Films

1996 ◽  
Vol 452 ◽  
Author(s):  
J. P. Conde ◽  
P. Brogueira ◽  
V. Chu
Keyword(s):  
Electron Cyclotron Resonance ◽  
Hydrogen Plasma ◽  
Chemical Vapor ◽  
Silicon Films ◽  
Hot Wire ◽  
Microcrystalline Silicon ◽  
Post Deposition Annealing ◽  
Ecr Plasma ◽  
Hydrogen Plasmas ◽  
Post Deposition

AbstractAmorphous and microcrystalline silicon films deposited by hot-wire chemical vapor deposition were submitted to thermal annealing and to RF and electron-cyclotron resonance (ECR) hydrogen plasmas. Although the transport properties of the films did not change after these post-deposition treatments, the power density of a Ar+ laser required to crystallize the amorphous silicon films was significantly lowered by the exposure of the films to a hydrogen plasma. This decrease was dependent on the type of hydrogen plasma used, being the strongest for an ECR plasma with the substrate held at a negative bias, followed by an ECR hydrogen plasma with the substrate electrode grounded, and finally by an RF hydrogen plasma.

Selective Area Laser Induced Deposition of Metal Boride Thin Films

1999 ◽  
Vol 558 ◽  
Author(s):  
Z.C. Zhong ◽  
V. Holmes ◽  
P.A. Dowben ◽  
D.J. Sellmyer
Keyword(s):  
Thin Films ◽  
Rare Earth ◽  
Chemical Vapor ◽  
Electrolytic Deposition ◽  
Solution Deposition ◽  
Selective Area ◽  
Rare Earth Chloride ◽  
Polycrystalline Thin Films ◽  
Area Deposition ◽  
Selection Of

ABSTRACTWe have developed a novel technique for the selective area deposition of rare earth hexaborides: laser-induced solution deposition (LISD). This technique is both simple and efficient and combines many advantages of both chemical vapor deposition and electrolytic deposition. The results of LISD deposition show that the polycrystalline thin films of rare earth hexaborides and sub-borides such as MB6, MB4, and MB2 (M = Gd, La) are formed through the light initiated chemical reaction of nido-decaborane (B10H14) and rare earth chloride in solution. These films grow with a strong texture growth axis and morphology that is dependent both on the selection of solvents and laser wavelengths and power used in LISD.

Observation of Reduced Oxidation Rates for Plasmaassisted CVD Copper Films

1993 ◽  
Vol 309 ◽  
Author(s):  
P. J. Ding ◽  
B. Zheng ◽  
E. T. Eisenbraun ◽  
W. A. Lanford ◽  
A. E. Kaloyeros ◽  
...  
Keyword(s):  
Rutherford Backscattering Spectrometry ◽  
Hydrogen Plasma ◽  
Chemical Vapor ◽  
Oxide Growth ◽  
Copper Films ◽  
Experimental Conditions ◽  
Oxidation Rates ◽  
Chemical Vapor Deposited ◽  
Kinetics Of ◽  
Plasma Reduction

AbstractOxidation kinetics of plasma-assisted chemical vapor deposited (PA-CVD) copper films were investigated using Rutherford backscattering spectrometry (RBS). The PA-CVD copper films were deposited using hydrogen plasma reduction of bis(hexafluoroacetylacetonato) copper(II), Cu(hfa)2, precursor. Under identical experimental conditions, PA-CVD copper films oxidize more slowly than sputtered copper films. This decrease in oxidationis manifested both as a time delay at the beginning of the oxidation of the PA-CVD copper films and as a decrease in the rate of oxide growth at oxidation temperatures of 200ºC and below. The possivation appears to be caused by the hydrogen plasma present during depostion.

Progress in Large Area Selective Silicon Deposition for TFT/LCD Applications

1994 ◽  
Vol 345 ◽  
Author(s):  
Jun H. Souk ◽  
Gregory N. Parsons
Keyword(s):  
High Performance ◽  
Hydrogen Plasma ◽  
Scale Up ◽  
Silicon Etching ◽  
Rf Power ◽  
Large Area ◽  
Selective Area ◽  
Process Scale Up ◽  
Process Scale ◽  
Area Deposition

AbstractWe have previously demonstrated selective area deposition of n+ microcrystalline silicon at 250°C using time modulated silane flow into a hydrogen plasma, and applied the technique to form high performance top-gate amorphous silicon TFT's with two mask sets. In this paper, we discuss issues related to process scale-up, including the effect of deposition rate on selectivity loss and non-uniformity. Uniformity can be achieved with higher growth rates by expanding the window for selectivity, and using conditions well within the process limits. We show that lower pressure and higher rf power can enlarge the window by enhancing the hydrogen-mediated silicon etching.

Ultra Thin SiO2 Mask Layer for Nano-Scale Selective-Area Pecvd of Si

1996 ◽  
Vol 448 ◽  
Author(s):  
J. W. Park ◽  
T. Yasuda ◽  
K. Ikuta ◽  
L.H. Kuo ◽  
S. Yamasaki ◽  
...  
Keyword(s):  
Low Temperature ◽  
Oxide Layer ◽  
Chemical Vapor ◽  
Oxide Layers ◽  
Mask Layer ◽  
Selective Area ◽  
Si Nanostructures ◽  
Sio2 Mask ◽  
Area Deposition ◽  
Thin Plasma

AbstractWe discuss the applicability of ultrathin SiO2 layers as a mask for low-temperature selective-area deposition of Si. Thin oxide layers with estimated thickness ranging from 4 to 20 Å were formed by oxidizing H-terminated Si(100) surfaces by a remote plasma exposure at room temperature. Low-temperature selective-area deposition was carried out using two different techniques: flow-modulated plasma-enhanced chemical vapor deposition (FM-PECVD) using SiH4 and H2, and very low pressure CVD (VLPCVD) using Si2H4. We show that the ultra-thin plasma oxide layers exhibit good properties for a use as a passivating mask layer, and that the oxide layer can be patterned directly by E-beam irradiation. These results open up a possibility to realize Si-nanostructures formation by selective-area processing. Degradation of the oxide layer by plasma processing is also discussed.

Progress in large area Selective Silicon Deposition for TFT/LCD Applications

1994 ◽  
Vol 336 ◽  
Author(s):  
Jun H. Souk ◽  
Gregory N. Parsons
Keyword(s):  
High Performance ◽  
Hydrogen Plasma ◽  
Scale Up ◽  
Silicon Etching ◽  
Rf Power ◽  
Large Area ◽  
Selective Area ◽  
Process Scale Up ◽  
Process Scale ◽  
Area Deposition

We have previously demonstrated selective area deposition of n+ Macrocrystalline silicon at 250°C using time modulated silane flow into a hydrogen plasma, and applied the technique to form high performance top-gate Amorphous silicon TFT's with two mask sets. In this paper, we discuss issues related to process scale-up, including the effect of deposition rate on selectivity loss and non-uniformity. Uniformity can be achieved with higher growth rates by expanding the window for selectivity, and using conditions well within the process limits. We show that lower pressure and higher rf power can enlarge the window by enhancing the hydrogen-Mediated silicon etching.

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