Selective Area Laser Induced Deposition of Metal Boride Thin Films

1999 ◽  
Vol 558 ◽  
Author(s):  
Z.C. Zhong ◽  
V. Holmes ◽  
P.A. Dowben ◽  
D.J. Sellmyer
Keyword(s):  
Thin Films ◽  
Rare Earth ◽  
Chemical Vapor ◽  
Electrolytic Deposition ◽  
Solution Deposition ◽  
Selective Area ◽  
Rare Earth Chloride ◽  
Polycrystalline Thin Films ◽  
Area Deposition ◽  
Selection Of

ABSTRACTWe have developed a novel technique for the selective area deposition of rare earth hexaborides: laser-induced solution deposition (LISD). This technique is both simple and efficient and combines many advantages of both chemical vapor deposition and electrolytic deposition. The results of LISD deposition show that the polycrystalline thin films of rare earth hexaborides and sub-borides such as MB6, MB4, and MB2 (M = Gd, La) are formed through the light initiated chemical reaction of nido-decaborane (B10H14) and rare earth chloride in solution. These films grow with a strong texture growth axis and morphology that is dependent both on the selection of solvents and laser wavelengths and power used in LISD.

Selective area deposition of diamond thin films on patterns of porous silicon by hot‐filament chemical vapor deposition

1995 ◽  
Vol 67 (24) ◽  
pp. 3557-3559 ◽  
Author(s):  
S. Mirzakuchaki ◽  
M. Hajsaid ◽  
H. Golestanian ◽  
R. Roychoudhury ◽  
E. J. Charlson ◽  
...  
Keyword(s):  
Thin Films ◽  
Chemical Vapor Deposition ◽  
Porous Silicon ◽  
Vapor Deposition ◽  
Chemical Vapor ◽  
Selective Area ◽  
Diamond Thin Films ◽  
Hot Filament ◽  
Area Deposition

Electrical Properties of Perovskite-Based Ferroelectric Thin Films Modified Using Rare-Earth Elements

2006 ◽  
Vol 320 ◽  
pp. 49-52
Author(s):  
Hiroshi Uchida ◽  
Hiroshi Nakaki ◽  
Hiroshi Funakubo ◽  
Seiichiro Koda
Keyword(s):  
Thin Films ◽  
Rare Earth ◽  
Electrical Properties ◽  
Lead Zirconate Titanate ◽  
Remanent Polarization ◽  
Lead Zirconate ◽  
Solution Deposition ◽  
Si Substrates ◽  
Crystal Anisotropy ◽  
Insulating Properties

The electrical properties of perovskite-based ferroelectric films were improved by ion modification using rare-earth cations. Thin films of rare-earth-modified lead zirconate titanate [Pb(Zr,Ti)O3] were fabricated on (111)Pt/Ti/SiO2/(100)Si substrates by a chemical solution deposition technique. The substitution of volatile cations in the simple-perovskite oxides, such as Pb2+ in Pb(Zr,Ti)O3 films, enhanced the insulating properties of the film. The crystal anisotropy of the Pb(Zr,Ti)O3 film could be controlled by varying the species and the amount of replacing cations to enhance the spontaneous polarization. Thus, ion modification using Dy3+ cation could enhance the remanent polarization of Pb(Zr,Ti)O3 film consequently.

Microstuctural Evolution and Substrate Selectivity in Pecvd μc-Si

1992 ◽  
Vol 283 ◽  
Author(s):  
Gregory N. Parsons ◽  
John J. Boland ◽  
James C. Tsang
Keyword(s):  
Hydrogen Plasma ◽  
Chemical Vapor ◽  
Process Conditions ◽  
Microcrystalline Silicon ◽  
Selective Area ◽  
Initial Nucleation ◽  
Bond Strain ◽  
Manufacturing Applications ◽  
Kinetics Of ◽  
Area Deposition

ABSTRACTWe discuss a process for selective area deposition of microcrystalline silicon (μc-Si) using plasma enhanced chemical vapor deposition at low substrate temperature (<300°C) using time modulated silane flow in a hydrogen plasma. We discuss selectivity and deposition rate on a variety of substrates with process conditions important for manufacturing applications, and show a distinct microstructural evolution in the initial nucleation layers using Raman spectroscopy that correlates with the transition from selective to non-selective growth. Atomic hydrogen discriminates between different degrees of bond strain in the nucleii formed on different substrates, and can increase the crystallinity fraction in films deposited at low temperatures by modifying the kinetics of bulk-like bond formation.

Rare-earth substituted HfO2 thin films grown by metalorganic chemical vapor deposition

2012 ◽  
Vol 520 (14) ◽  
pp. 4512-4517 ◽  
Author(s):  
Anjana Devi ◽  
Stefan Cwik ◽  
Ke Xu ◽  
Andrian P. Milanov ◽  
Heshmat Noei ◽  
...  
Keyword(s):  
Thin Films ◽  
Rare Earth ◽  
Chemical Vapor Deposition ◽  
Vapor Deposition ◽  
Metalorganic Chemical Vapor Deposition ◽  
Chemical Vapor ◽  
Metalorganic Chemical

Fabrication of MoS2 thin film transistors via selective-area solution deposition methods

2015 ◽  
Vol 3 (16) ◽  
pp. 3842-3847 ◽  
Author(s):  
Yang Xi ◽  
Martha Isabel Serna ◽  
Lanxia Cheng ◽  
Yang Gao ◽  
Mahmoud Baniasadi ◽  
...  
Keyword(s):  
Thin Film ◽  
Thin Films ◽  
Molybdenum Disulfide ◽  
Thin Film Transistors ◽  
Solution Method ◽  
Solution Deposition ◽  
Selective Area

We report a simple and selective solution method to prepare molybdenum disulfide (MoS2) thin films for functional thin film transistors (TFTs).

Growth of BaTiO3 Thin Films by MOCVD

1993 ◽  
Vol 335 ◽  
Author(s):  
Debra L. Kaiser ◽  
Mark D. Vaudin ◽  
Greg Gillen ◽  
Cheol-Seong Hwang ◽  
Lawrence H. Robins ◽  
...  
Keyword(s):  
Thin Films ◽  
Raman Spectroscopy ◽  
Chemical Vapor ◽  
Titanium Isopropoxide ◽  
Elevated Pressure ◽  
Process Gas ◽  
Polycrystalline Thin Films ◽  
Transmission Electron ◽  
Quartz Substrates ◽  
Secondary Ion

AbstractPolycrystalline thin films of BaTiO3 were deposited on fused quartz substrates at 600°C by metalorganic chemical vapor deposition (MOCVD). The films were characterized by x-ray powder diffraction (XRD), transmission electron microscopy (TEM), secondary ion mass spectroscopy (SIMS) and Raman spectroscopy. Films prepared in the early stages of this study that had appeared to contain only crystalline BaTiO3 by XRD were found to have nonuniform composition and microstructure through the film thickness by SIMS and TEM. The MOCVD system was then modified by installing a process gas bypass apparatus and an elevated pressure bubbler for the titanium isopropoxide precursor. A 1.2 μm thick BaTiO3 film prepared in the modified system demonstrated much improved compositional and microstructural uniformity through the thickness of the film. This film had a columnar microstructure with grain widths of 0.1–0.2 μm and exhibited tetragonality as detected by Raman spectroscopy.

Solution Deposition of Ferroelectric Thin Films

MRS Bulletin ◽  
1996 ◽  
Vol 21 (6) ◽  
pp. 49-54 ◽  
Author(s):  
B.A. Tuttle ◽  
R.W. Schwartz
Keyword(s):  
Thin Films ◽  
Mixed Oxides ◽  
Chemical Vapor ◽  
Ferroelectric Thin Films ◽  
Lead Magnesium Niobate ◽  
Antireflection Coatings ◽  
Solution Deposition ◽  
Development Organization ◽  
Lead Magnesium ◽  
Cost Efficient

Solution deposition has been used by almost every electroceramic research-and-development organization throughout the world to evaluate thin films. Ferrite, high-temperature-superconductor, dielectric, and antireflection coatings are among the electroceramics for which solution deposition has had a significant impact. Lithium niobate, lithium tantalate, potassium niobate, lead scandium tantalate, lead magnesium niobate, and bismuth strontium tantalate are among the ferroelectric thin films processed by solution deposition. However, lead zir-conate titanate (PZT) thin films have received the most intensive study and will be emphasized in this article.Solution deposition facilitates stoichiometric control of complex mixed oxides better than other techniques such as sputter deposition and metalorganic chemical vapor deposition (MOCVD). Solution deposition is a fast, cost-efficient method to survey extensive ranges of film composition. Further it is a process compatible with many semiconductor-fabrication technologies, and it may be the deposition method of choice for applications that do not require conformal depositions and that have device dimensions of 2 μm or greater. Specific applications for which solution deposition is commercially viable include decoupling capacitors, uncooled pyroelectric infrared detectors, piezoelectric micromotors, and chemical microsensors based on surface-acoustic-wave technology. Reviews of some of the more fundamental aspects of solution-deposition processing may be found in the scientific literature.

Synthesis and Properties of Nd-Substituted Bismuth Titanate Polycrystalline Thin Films with a-/b-Axes Orientation

2006 ◽  
Vol 301 ◽  
pp. 57-60 ◽  
Author(s):  
Masahiro Kurachi ◽  
Hirofumi Matsuda ◽  
Takashi Iijima ◽  
Hiroshi Uchida ◽  
Seiichiro Koda
Keyword(s):  
Thin Films ◽  
Room Temperature ◽  
Ferroelectric Properties ◽  
Fair Value ◽  
Solution Deposition ◽  
Chemical Solution Deposition Method ◽  
Low Leakage ◽  
Polycrystalline Thin Films ◽  
Treatment Conditions ◽  
Low Leakage Current

Nd-substituted Bi4Ti3O12 (BNT) polycrystalline thin films with preferred a-/b-axes orientations were grown on sputter-grown IrO2(101) layers by chemical solution deposition method. After optimizing the heat treatment conditions, insulating characters and ferroelectric properties in 250-nm-thick BNT thin films with a-/b-axes orientations were investigated at room temperature. Low leakage current density of J=10-7~10-8 A/cm2 at 100 kV/cm and fair value of remnant polarization (2Pr=31 μC/cm2 at 400 kV/cm) were measured even though the Bi2O2 blocking layer aligned parallel to the film normal.

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