Rapid Thermal Annealing for Electrical Activation in The Fabrication of GaAs Mesfet

ABSTRACTRapid thermal annealing (RTA) has been employed for the electrical activation of shallow n-channel layer by Si+ implantation in the fabrication of GaAs MESFET. To prevent considerable outdiffusion of gallium and arsenic from GaAs substrate during annealing, encapsulating layers such as SiNx and SiNx/SiO2 are deposited. The SiNx/SiO2 double dielectric encapsulant is shown to be more effective to improve the electrical activation. Depending on RTA temperature between 900 and 950°C, the maximum activation efficiency exhibits 77% at the implanted energy of 70 keV and the dose of 5x1012 cm−2. SIMS analyses show the reduction of the hydrogen contained in the silicon nitride and no outdiffusion of Ga and As during RTA. It also shows the sharp Si-profile after RTA at 950°C, 30 sec. The MESFET fabricated using activation with RTA provides better transconductance than that with furnace-annealed activation.

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Rapid Thermal Annealing for Electrical Activation in the Fabrication of GaAs MESFET

MRS Proceedings ◽

10.1557/proc-300-575 ◽

1993 ◽

Vol 300 ◽

Author(s):

S.W. Choi ◽

J.W. Yang ◽

B.H. Koak ◽

K.I. Cho ◽

H.M. Park

Keyword(s):

Silicon Nitride ◽

Thermal Annealing ◽

Rapid Thermal Annealing ◽

Gaas Substrate ◽

Electrical Activation ◽

Gaas Mesfet ◽

Channel Layer ◽

Activation Efficiency ◽

Maximum Activation ◽

C 30

ABSTRACTRapid thermal annealing (RTA) has been employed for the electrical activation of shallow n-channel layer by Si+ implantation in the fabrication of GaAs MESFET. To prevent considerable outdiffusion of gallium and arsenic from GaAs substrate during annealing, encapsulating layers such as SiNx and SiNx/SiO2 are deposited. The SiNx/SiO2 double dielectric encapsulant is shown to be more effective to improve the electrical activation. Depending on RTA temperature between 900 and 950°C, the maximum activation efficiency exhibits 77% at the implanted energy of 70 keV and the dose of 5×1012 cm−2. SIMS analyses show the reduction of the hydrogen contained in the silicon nitride and no outdiffusion of Ga and As during RTA. It also shows the sharp Si-profile after RTA at 950°C, 30 sec. The MESFET fabricated using activaton with RTA provides better transconductance than that with furnace-annealed activation.

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Electrical Activation Behavior of Ion Implanted Silicon in Gallium Arsenide During Rapid Thermal Annealing

MRS Proceedings ◽

10.1557/proc-144-495 ◽

1988 ◽

Vol 144 ◽

Cited By ~ 8

Author(s):

J.P. de Souza ◽

D.K. Sadana ◽

H.J. Hovel

Keyword(s):

Activation Energy ◽

Silicon Nitride ◽

Thermal Annealing ◽

Rapid Thermal Annealing ◽

Annealing Process ◽

Electrical Activation ◽

Maximum Activation ◽

Surface Decomposition ◽

Activation Behavior ◽

Electrical Data

ABSTRACTRapid thermal annealing (RTA) (800–1000°C, 1–60 s) was performed on capless and silicon nitride (SixNy) capped GaAs samples implanted with Si (30 keV, 4.5×1013cm−2 ) and SiF+ (50 keV, 4.5×1013cm−2 ). The maximum activation for the Si+ implants saturated at 25% (capless) and 42% (capped) and that for the SiF+ implants saturated at 20% (capless) and 35% (capped). The activation degraded at temperatures > 825°C due to surface decomposition in the capless annealing case and at > 925°C due to the cap failure in the capped annealing case. For all the RTA conditions studied here, higher activation always occurred with the Si+ rather SiF+ implants. An activation energy of 0.48 eV for the annealing process was determined from the electrical data. It was also observed that the heating and/or cooling rates can significantly influence the electrical activation.

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Co-Implantation of Si And Be in GaAs by Rapid Thermal Annealing

MRS Proceedings ◽

10.1557/proc-92-411 ◽

1987 ◽

Vol 92 ◽

Cited By ~ 3

Author(s):

Tan-Hua Yu ◽

Sujane Wang

Keyword(s):

Thermal Annealing ◽

Rapid Thermal Annealing ◽

Annealing Process ◽

Superior Performance ◽

Rapid Thermal Annealing Process ◽

Gaas Mesfet ◽

Activation Efficiency ◽

Annealing Cycle ◽

Thermal Annealing Process ◽

Dopant Redistribution

ABSTRACTA buried p-layer in GaAs MESFET channel is successfully formed by (Si,Be) co-implantation and rapid thermal annealing process. The annealing cycle is optimized to activate Si and Be simultaneously and to minimize the dopant redistribution for precise dopant control. As a result, more than 80% activation efficiency for both Si and Be, as well as the greatly improved doping abruptness from 85 nm/decade to 65 nm/decade are achieved. Devices are fabricated and superior performance including sharper pinchoff, an increase of RF gain by 2–3dB and a 40% decrease in backgating effect is observed.

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Chemical bonding and interface analysis of ultrathin silicon-nitride layers produced by ion implantation and Electron Beam Rapid Thermal Annealing (EB-RTA)

Applied Physics A Solids and Surface ◽

10.1007/bf00331725 ◽

1994 ◽

Vol 59 (4) ◽

pp. 435-439 ◽

Cited By ~ 27

Author(s):

A. Markwitz ◽

H. Baumann ◽

E. F. Krimmel ◽

R. W. Michelmann ◽

C. Maurer ◽

...

Keyword(s):

Electron Beam ◽

Silicon Nitride ◽

Ion Implantation ◽

Thermal Annealing ◽

Rapid Thermal Annealing ◽

Chemical Bonding ◽

Interface Analysis ◽

Nitride Layers

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Electrical activation of bismuth implanted into silicon by rapid thermal annealing and kinetics of defects

Journal of Applied Physics ◽

10.1063/1.354142 ◽

1993 ◽

Vol 74 (1) ◽

pp. 119-122 ◽

Cited By ~ 15

Author(s):

J. P. de Souza ◽

P. F. P. Fichtner

Keyword(s):

Thermal Annealing ◽

Rapid Thermal Annealing ◽

Electrical Activation ◽

Kinetics Of

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Special features of electrical activation of 28Si in single-crystal and epitaxial GaAs subjected to rapid thermal annealing

Semiconductors ◽

10.1134/1.1187945 ◽

2000 ◽

Vol 34 (1) ◽

pp. 27-31

Author(s):

V. M. Ardyshev ◽

M. V. Ardyshev ◽

S. S. Khludkov

Keyword(s):

Single Crystal ◽

Thermal Annealing ◽

Rapid Thermal Annealing ◽

Electrical Activation ◽

Epitaxial Gaas

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The effects of point defects on the electrical activation of Si-implanted GaAs during rapid thermal annealing

IEEE Transactions on Electron Devices ◽

10.1109/16.108227 ◽

1992 ◽

Vol 39 (1) ◽

pp. 176-183 ◽

Cited By ~ 5

Author(s):

J.-L. Lee ◽

L. Wei ◽

S. Tanigawa ◽

T. Nakagawa ◽

K. Ohta ◽

...

Keyword(s):

Thermal Annealing ◽

Rapid Thermal Annealing ◽

Point Defects ◽

Electrical Activation

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Hydrogen Behavior in PECVD Nitride by SiH4 & ND3 During RTA

MRS Proceedings ◽

10.1557/proc-424-109 ◽

1996 ◽

Vol 424 ◽

Author(s):

S. S. He ◽

V. L. Shannon ◽

T. Nguyen

Keyword(s):

Silicon Nitride ◽

Thermal Annealing ◽

Rapid Thermal Annealing ◽

Annealing Process ◽

Rapid Thermal Annealing Process ◽

Wave Numbers ◽

Thermal Annealing Process

AbstractPECVD silicon nitride was deposited by silane and deuterium ammonia. Silicon rich and nitrogen rich silicon nitride were deposited by varying the ratio of the SiH4/DH3. From FTIR, we found that the wave numbers of SiD and ND shifted lower when compared to SiH and NH bond in the NH3 nitride. In Si-rich nitride, both Si-H and Si-D bonds were found, which is different from N-rich nitride, where only an ND bond was found. Most of the hydrogen in NH(D) comes from the ammonia during PECVD deposition. We found that some of the deuterium exchanges its bonding to silicon from the initial bonding to nitrogen during a rapid thermal annealing process.

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